Instrumentation for the Energy Frontier Ronald Lipton, Fermilab High Energy Physics has had remarkable success at the Frontier culminating with the discovery of the Higgs. This success was enabled by equally remarkable progress in technology and instrumentation. These lectures will look at past and current work and perhaps offer a glimpse of the future Tracking Lets think about designing a tracker for a collider detector They all look pretty generic The solenoidal field defines the overall geometry Transitions from a barrel to disk geometry tend to be awkward Disks provide lower mass at high eta, more normal incidence The number of hits/area is maximized with disks combined with barrels R. Lipton2 D0 Designing a Tracker - 1 R. Lipton3 First lets decide on the vertex detector Scale set by HQ lifetimes Minimize R inner /R outer R inner set by occupancy, beam pipe diameter R outer set by cost of pixelated detectors meas set by technology, mass of sensors ILC ~ 5 microns at 1.5 cm (slow, rad soft, monolithic) LHC ~ 20 microns at 5 cm (fast, rad hard, hybrid) Length set by luminous region, angular coverage Tevatron luminous region ~25 cm long D0SMT Designing a Tracker - 2 R. Lipton4 Momentum Resolution Resolution proportional to /BL 2 For a high momentum track = 0 + r =1/p t We effectively want to measure (circumferential distance d i ) Most important information is at the outer radius and near the origin Intermediate layers primarily provide pattern recognition Alpha estimates the effect of the layer on momentum resolution Designing a Tracker - 3 R. Lipton5 The Forward Direction As we move forward the we begin to lose Bdl and momentum resolution Disks become more cost effective/hit than barrels We can recover some momentum resolution with precision disks We want to measure phi well, r not as well, but this is difficult in a disk geometry Intermediate disks have little effect on resolution CMS FPIX Plaquette Tiled 3D pixel structure LHCB VELO R and sensors R. Lipton6 Possible design for CMS Phase 2 tracker with extension to improve acceptance for forward physics (H , Higgs self coupling, WW scattering) Doublet strip modules For track trigger Doublet pixel/strip modules for track trigger Forward pixel diska For extended coverage Silicon Tracking This has become the baseline technology for the energy frontier. It is: Precise ~ micron-level resolution Moderate to low mass (depends on density, cooling, electronics) Fast ~ can achieve sub-nanosecond resolution Radiation hard can be designed to operate to /cm 2 fluence Costly? $10/cm 2 for CMS sensors $3/cm 2 for CMOS electronics We can profit from the huge technical advances and infrastructure in the semiconductor industry R. Lipton7 Signal and Noise What is the thinnest practical silicon tracker? Noise Increasing g m costs power (g m ~I d ), minimize C det ->pixels ~ 10 ff possible minimal coupling to other electrodes Power assume i d =500 na, pitch 25 microns Signal shoot for 25:1 s/n 80 e/h pairs/micron Speed lets say 5 ns Mechanical Can thin to ~10 microns R. Lipton8 Silicon Detector How we connect the detectors to the electronics, cool them, and mount them is the name of the game R. Lipton9 SiO 2 Al n+ p+ Hybrid Pixel Interconnect using bump bonds hybrid Analog cable SVX4 hybrid Analog cable SVX4 Detector/Electronics Integration Technologies Monolithic active pixels collect charge in a few m epitaxial layer (STAR, ALICE) Charge coupled device (SLD) DEPFET (Belle II) Silicon on Insulator 3D Integration R. Lipton10 p+ n+ rear contact drainbulksource p s y m m e t r y a x i s n+ n internal gate top gateclear n - n+ p ~1m 50 m MAPS CCD DEPFET SOI3D Solving Problems - MAPS MAPs technology used in cameras using charge collection by diffusion in a thin(~5-15 m) epitaxial layer Slow-charge collection by diffusion Charge lost to parasitic PMOS Thick, high resistivity epitaxial layers Fully depleted substrates 4 Well process3D assemblies Low S/N Thinning and backside processing (IPHC-DRS) (RAL) (IPHC-DRS) Technologies - Device-scaling Rapid initial decrease in cost Slower leveling Voltage no longer scaling (P~CV 2 f) Analog becomes harder at feature sizes below 65 nm Designs become very costly 8 130 nm - $500k 12 65 nm - $1.9M R. Lipton12 (Deptuch, IF ASIC meeting) Technologies- Bonding Costs and Yields Current and projected costs and yields for sensor/readout integration technologies Technologies- Three Dimensional Electronics A 3D-IC technology is composed of two or more layers of active electronics or sensors connected with through silicon vias It enables intimate interconnection between sensors and readout circuits It enables unique functionality Digital/analog/ and data communication tiers Micro/macro pixel designs Correlate information Wafer thinning enables low mass, high resolution sensors Etching of vias (3D) through silicon bulk Bonding technologies enable very fine pitch, high resolution pixelated devices Commercialization of 3D wafer bonding can reduce costs for large areas Unique circuit/sensor MIT-LL 3D-IC process FDSOI oxide- oxide bonding Face-Face Back-Face Ziptronix / licensed to Novati Xilinx 3D-based FPGA Pixelization- 3D Interconnect Technology based on: Bonding between layers Copper/copper Oxide to oxide fusion Copper/tin bonding Polymer/adhesive bonding Cu stud Through wafer via formation and metalization 8 micron pitch, 50 micron thick oxide bonded imager (Lincoln Labs) 8 micron pitch DBI (oxide-metal) bonded PIN imager (Ziptronix) Copper bonded two-tier IC (Tezzaron) 15 IBM 32 nm 3D technology PCB Interconnect Opportunities in 3 Dimensions Handle wafer sensor trenches Buried oxide readout IC and pads 200 micron CMS Level 1 track trigger - Correlate hits in adjacent layers to filter out low momentum tracks CMS Use stack of 3D tiers to emulate tracker layers for CAM based track recognition Use TSVs to connect each SiPM subpixel to quenching, timing, and control electronics Combine active edge and 3D electronics to produce tiled sensors combined with ROICs for large area arrays Example - Track Trigger In CMS the L1 trigger will be saturated with multiple interaction background Use tracking information in the L1 trigger Send hits from tracks with Pt>2 off detector for L1 Correlate hits from sensors separated by ~ 1 mm Correlation done on-module To do this we need novel interconnect technology which allows the chip to see signals from top and bottom sensors Through-silicon-vias allows single layer of electronics to see both R. Lipton17 Analog signals Short (1.25 mm) strips Long (2.5 cm) strips Carbon Foam Spacer Short (0.125 cm) strips Flex Jumper ROIC TSVs Via-Last Module (FNAL design) 250 50 x 250 micron through silicon vias Bump bonded short strip sensors Analog signals through flex jumper 2.5 cm long strips (set by chip size) High Speed silicon Two techniques to attain ~10 ps resolution Fast parallel plate structure using 3D detector technology Use amplification to produce a large signal from initial electron arriving at gap structure R. Lipton Higgs Factory Workshop[ 11/16/ Fast parallel plate structure (Da Via) Gain-based structure (Sadrozinski) Use two layers of 3D SiPMs to produce fast, low power, low noise trackers (Lipton) Radiation Damage in Silicon Radiation Electromagnetic ( , , x-ray). Ionization, e-hole pair creation. Hadronic (n, , p). Damage to the bulk material caused by displacement of atoms from lattice sites in addition to ionization Electronics are affected primarily by ionization Charge buildup in insulating layers Charge injection into sensitive nodes Sensors are affected by bulk damage and ionization Crystal structure damage Introduction of traps Introduction of mid-band states R. Lipton19 A. Vasilescu (INPE Bucharest) and G. Lindstroem (University of Hamburg), Displacement damage in silicon, on-line compilation Radiation effects on Detectors HEP silicon detectors used at the Tevatron and LHC are primarily affected by bulk damage. Associated electronics are affected by primarily by ionization damage. Detectors are unique Lightly doped silicon Thick structures Regular array of electrodes Several different bulk effects: Increase in leakage current Changes in doping concentration Increased charge trapping All of these depend on time and temperature, sometimes in complex ways R. Lipton20 electrons holes extrapolated values Ref 4. Depends on temperature Designing Radiation Hard Electronics Radiation generates e-hole pairs in insulating oxides Electrons are mobile and are removed by the gate- substrate field Holes are trapped either in the bulk or by deeper traps near the silicon-oxide junction Holes can recombine with tunneling electrons from the silicon-> thin gate oxides in modern deep submicron electronics are intrinsically radiation hard R. Lipton21 Gate thickness (nm) Tranisistor V/Rad Designing Radiation Hard Detectors R. Lipton22 Leakage current is universal Generates shot noise, thermal effects Reduce thickness Run cold to reduce current, avoid thermal runaway Trapping reduces signal mean free path Thin detectors Increase internal fields Run Cold (~-20 deg C) Freeze-in p-type impurities Use 3D detectors Etch electrodes deep into silicon Full thickness for charge collection, short drift distance Use Diamond sensors (Parker, Kenney) Mechanics These are complex engineered systems Mechanics has central effects on physics performance We sometimes focus too much on physicsey things like radiation damage and give short shrift to mechanics R. Lipton23 CMS Material Controlling material is critical to physics performance. That is apparent in vertex detectors and trackers, where multiple scattering limits spatial and momentum resolution. The production of additional particles increases backgrounds and occupancies and complicates track finding, track tracing, and event reconstruction. Stability, deflections, and distortions depend on the weight to be supported, the geometry of structures, environmental changes from fabrication to operation, and material properties. R. Lipton24 New Materials Carbon fiber composites Carbon derivatives (C-C, Pyrolytic graphite, etc.) Beryllium Titanium alloys Ceramics Advanced compounds (SiC, BN, SiN, diamond, etc.) Conducting polymers and carbon conductors Foams Adhesives Electrical circuit components Liquid / 2-phase cooling tubes R. Lipton25 Power Current LHC detectors dissipate more than half their power in the cables. Future, more ambitious detectors will utilize even more power: High speed front end electronics GHz Waveform digitizers Pixelated sensors Higher readout bandwidth To address these problems all future experiments are examining power delivery options Pulsed power (ILC, CLIC) DC-DC conversion (CMS, ILC, CLIC) High efficiency, rad hard high voltage ratio converters capable of operating in a magnetic field. Serial powering (ATLAS, think Xmas tree lights) R. Lipton26 Cooling An efficient, low mass cooling scheme should have: Efficient heat transfer (2-phase) CO 2 systems Low mass Good thermal contact to electronics and sensor Well engineered Almost all hadron collider experiments (except D0) have had serious cooling issues R. Lipton27 Super B, LHCb micromachined channels DEPFET air cooling thermal tests Power and Cooling Data transmission pj/bit ~ 5-10 Gbit/sec Amplifier/readout ~100 mW/cm 2 Sensor I L ~ 1ma/100 cm 2 x 500 V (high -25 deg C DC-DC converter supplies power at 60-80% efficiency 5x10 cm module 7.5 Watts If our tracker is 100 m 2 -> 150 kW !!! R. Lipton28 Pixelated Sensor Amplifier Readout Data Transmission Data Transmission DC-DC conversion DC-DC conversion Support structure Cooling pipes What do we do? Data transmission Low power (less rad had?) transmission (10pj/bit) Lower bandwidth (process on detector) (2.5 Gb/sec) Amplifier/readout Low power design limit functionality? Smaller feature size no longer too helpful (V dd ~1V) May be be able to achieve 75 mW/cm 2 Thin Sensor to 100 microns V d ~T 2, lower volume V High frequency DC-DC converter 90% efficiency Can get to 85 kW not so different than current CMS R. Lipton29 Data Transmission Industry is driving low power, high bandwidth data transmission Low power optical data transmission Modulators rather than laser diodes Mach-Zender interferometer utilizing material with strong electro- optic effects Radiation hard transceivers R. Lipton30 Current driver Laser (VCSEL) Receiver PIN diodes Optical Tx Optical Rx Elec. Tx Elec. Rx Voltage driver Modulator Receiver PIN diodes Optical Tx Optical Rx Elec. Tx Elec. Rx Laser (CW) Monolithically integrated Silicon photonic device Muon Collider - Accelerator A muon collider would accelerate and cool a beam of muons and bring them into collision for ~1000 turns in a circular collider It is the only lepton collider that can plausibly scale beyond 2-3 TeV with acceptable cost and power Given the lack of new physics at 8 TeV LHC such a capability becomes increasingly interesting Physics capabilities are similar to e + e - colliders, with additional ability to explore s-channel h and H/A, but worse beam background, lower polarization It can provide a phased approach to implementation Move gracefully from factory to Higgs factory to high energy collider complementing the rare decay and neutrino programs The phasing and small footprint makes the program affordable But the Muon beam decays: For 62.5-GeV muon beam of 2x10 12, 5x10 6 dec/m per bunch crossing For 0.75-TeV muon beam of 2x10 12, 4.28x10 5 dec/m per bunch crossing, or 1.28x10 10 dec/m/s for 2 beams; 0.5 kW/m. R. Lipton31 Ionization Cooling Muons produced by a high intensity target are collected and initially cooled by bunch rotation. Ionization cooling is based on the idea that energy losss occurs in x,y,z but momentum is restored by RF in z only. Cooling is limited by the heating effect of multiple scattering Low Z absorber in RF cavity with solenoid field R. Lipton32 Emittance change Energy loss cooling term Multiple scattering Heating term Accelerator Challenges Ionization Cooling Very high field (40T) high temp superconducting magnets 6 dimensional cooling RF breakdown in magnetic fields Seems to be solved Neutrino radiation ( < 10% x DOE limit at site boundary?) Probably OK at 3 TeV, harder at 6 TeV Must limit length of straight sections (~ meters) Magnet shielding from beam decay heat loads Are any of these deadly to the Muon Collider concept? subject of MAP Ronald Lipton 8/11/201133 Figure of merit: Integrated Luminosity/Wall plug power MIT Workshp; April 10,2013 Review of HIGGS Factory technology options TOT / P WT luminosity X per MW Evolution of Muon Facilities J.P.Delahaye MAP Collaboration workshop (June 19, 2013) 0.8 GeV 0.8 2.8 GeV Linac + 2 RLA PX2 (3 GeV, 3 MW) Accum Compr Proton Driver Storage Ring Acceleration Front End Targe t PX4 (8 GeV, 4 MW) 235m 1-3 MW Neutrino factory 4 MW Higgs factory 3-10 TeV Muon Collider R. Lipton36 Muon collider Higgs factory beam transport and detector Muon Collider Background 1.5 TeV 37 Non-ionizing background ~ 0.1 x LHC But crossing interval 10 s/25 ns 400 x Detectors must be rad hard Dominated by neutrons smaller radial dependence Muon Collider Detector How do we design a detector for a muon collider? Start with design for physics ILC, CLIC detectors SiD is the best match Background rejection is clearly the dominant issue Design the machine-detector interface and model bkd Understand the compromises needed to reject background Is it plausible, what are the physics impacts? R. Lipton38 Neutrons/cm^2/bunch Much of the Background is Soft 39 And Out of Time (Striganov) e h0h0 h +- e h0h0 h +- Timing is clearly crucial to reduce backgrounds Background Path length in silicon detector vs de/dx 40 Detector thickness Angled tracks MIP Background Inside a silicon detector: dE/dX Path in detector Neutrons electrons Compton High energy conversions soft conversions positrons Time of energy deposit with respect to TOF from IP 41 Tracker Implementation Tracker sufficiently pixelated so background occupancy is acceptable 20 micron vertex 100 micron x 1 mm tracker Multi-hit/waveform digitize hits within ~20 ns window with ~0.5 ns resolution Plausible given signal/noise, power requirements Track fit now includes time of hit to accommodate slower particles from IP Problems are really power and interconnect R. Lipton42 In time pion In time slow k or p Out of time n, Pixel waveforms Simulation of 6 ns peak, 100 ps jitter 100 x 1 mm pixel 65 nm Front end (J. Kaplon, CERN) Threshold Chan N Chan M SiD(ILC)-Like Tracker R. Lipton43 SiD-like tracker with CMS-like 100 x 1 mm strips 20 micron pixel Vertex barrel 50 micron pixel Vertex disks Tungsten absorber cone Calorimeter Implementation Fast timing will lose some information from neutrons Backgrounds form a pedestal in each cell fluctuations determine resolution Segmented total absorbtion calorimeter Merge PFA and Dual RO concepts Design to control neutrons Utilize prompt arrival and EM shower shape to identify photons andelectrons R. Lipton44 20 GeV - No DR correction 20 GeV - With DR correction No slow neutron signal: Before Dual Read out correction: Mean: 15.5 GeV (reduced by 13.6 %) : 1.21+/-0.04 GeV After DR correction: Mean: 20.5 GeV : 0.68+/-0.02 GeV (Wenzel) Event Yields Based on counting experiment stepping the beam across the Higgs resonance I expect that detector efficiencies and analysis cuts will reduce yields by 10-20% These results will have to be confirmed with full simulation including background Summary and Conclusions This was a glimpse of instrumentation at the energy frontier I gave short shrift to or, neglected many things: Diamond detectors Triggering Data processing Hopefully our Instrumentation Frontier report will provide a more balanced overview. There are many opportunities for young people to get involved at Snowmass On LHC upgrades Generic detector R&D projects R. Lipton46 references Particle Data Group web site V. Radeka, Ann. Rev. Nucl. Particle Sci. 38 (1988) 217. F. Sauli (GEM) Nucl. Instr. and Meth. A, 386 (1997), p. 531 Spieler -Jaakko Hrknen, GSI/FAIR/NUSTAR/S-FRS seminar, Kumpula 6 October 2008 Systematic Errors and Alignment for Barrel Detectors, A. Seiden. Mar pp. SDC Velo D.E. Hutchcroft, Initial results from the LHCb Vertex Locator, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 648, Supplement 1, 21 August 2011, Pages S49-S50, ISSN , Ren-yuan Zhu (CalTech) - J.B. Birks, The Theory and Practice of Scintillation Counting, New York, 1964 G.F. Knoll, Radiation Detection and Measurement,New York, heidelberg.de/~coulon/Lectures/Detectors/Free_PDFs/Lecture4.pdfheidelberg.de/~coulon/Lectures/Detectors/Free_PDFs/Lecture4.pdf David Neuffer Introduction to Muon Cooling R. Lipton47 May 8 th 2013Hans Wenzel Effect of dual read out correction: s from neutron Capture discarded Before Dual Read out correction: Mean: 15.5 GeV (reduced by 13.6 %) : 1.21+/-0.04 GeV After DR correction: Mean: 20.5 GeV : 0.68+/-0.02 GeV 20 GeV - No DR correction 20 GeV - With DR correction