ink0210ap1

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ISAHAYA ELECTRONICS CORPORATION

INK0210AP1High Speed Switching

Silicon N-channel MOSFET

PRELIMINARY

Notice : This is not a final specification

Some parametric are subject to change.

DESCRIPTIONINK0210AP1 is a Silicon N-channel MOSFET.

This product is most suitable for use such as portable

machinery, because of low voltage drive and low on resistance.

FEATUREInput impedance is high, and not necessary to

consider a drive electric current.

High drain current ID=2A

Vth is low, and drive by low voltage is possible. Vth=1.02.5V

Low on Resistance. RDS(on)=0.3(TYP).

High speed switching.

Small package for easy mounting.

APPLICATIONSwitching

OUTLINE DRAWING UNIT

ELECTRICAL CHARACTERISTICSTa=25Limit

Parameter Symbol Test ConditionMIN TYP MAX

Unit

Drain-Source Breakdown Voltage V(BR)DSS ID=100A, VGS=0V 60 - - V

Gate-Source Leak current IGSS VGS=20V, IDS=0A - - 10 A

Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 AGate Threshold Voltage Vth ID=250A, VDS= V GS 1.0 - 2.5 V

Forward Transfer Admittance | Yfs | VDS=10V, ID=1A - 2.0 - S

Static Drain-Source On-State Resistance RDS(ON) ID=0.5A, VGS=5.0V - 0.30 -

Input Capacitance Ciss - 220 - pF

Output Capacitance CossVDS=10V, VGS=0V, f=1MHz

- 28 - pF

ton - 16 - nsSwitching Time

toff

VDD=30V, ID=1A

VGS=05V - 25 - ns

MAXIMUM RATINGSTa=25Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 60 V

VGSS Gate-Source Voltage 20 V

ID Drain Current(DC) 2 A

IDP Drain current(Pulse) 1 4 A

PD Total Power Dissipation 500 mW

Tch Channel Temperature +150

Tstg Storage temperature -55+150

1Pw10s, Duty cycle1%

S D G

TERMINAL CONNECTERSSOURCEDDRAINGGATE

JEITASC-62JEDECSOT-89

4.4

2.5

3.0

1.5

MARKING

1.5

1.6

0.8

MIN

0.40.5

0.4

G

S

D

EQUIVALENT CIRCUIT

K AType Name

LOT

MARKING

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PRELIMINARY



TYPICAL CHARACTERISTICS

RDS(on)-VGS

0.1

1

10

0 2 4 6 8 10

Gate-Source voltage VGS(V)

Drain-SourceONResistance

RDS(on)()

ID=1A

Ta=1007525-25

ID-VGS

0.001

0.01

0.1

1

10

0 0.5 1 1.5 2 2.5 3 3.5 4

Gate-Source voltage VGS(V)

DraincurrentID(A)

VDS=10V

Ta=1007525-25

RDS(on)-ID

0.01

0.1

1

0 0.5 1 1.5 2 2.5 3

Drain current ID(A)

Drain-Source

ONResistance

RDS(o

n)(

)

VGS=4.5V

Ta=100

7525-25

|Yfs|-ID

0.1

1

10

0 0.5 1 1.5 2 2.5 3

Drain current ID(A)

Forwardtransferadmittance|Yfs|(S)

VDS=10V

Ta=100

7525-25

IDR-VDS

0.001

0.01

0.1

1

10

0 0.5 1 1.5 2

Drain-Source voltageVDS(V)

R

everseDraincurrentIDR(A)

VGS=0V

Ta=1007525-25

Vth-Ta

0

0.5

1

1.5

2

2.5

3

-50 -25 0 25 50 75 100 125

Ambinet temperature Ta()

GatethresholdvoltageVth(V

)

ID=250uAVDS=VGS

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PRELIMINARY



TYPICAL CHARACTERISTICS

C-VDS

10

100

1000

0.1 1 10 100

Drain-Source voltage VDS(V)

CapacitanceC(pF)

Ta=25VGS=0V

Coss

Ciss

t-ID

1

10

100

1000

0.01 0.1 1 10

Drain current ID(A)

Switchingtimet(ns)

Ta=25VDD=30VVGS=5VRG=50,PW=10us

toff

tf

ton

tr

ASO

0.001

0.01

0.1

1

10

0.01 0.1 1 10 100

Drain-Source voltage VDS(V)

DraincurrentID(A)

Ta=25

Single Pulse

1msec

100msec

10msec

RDS(on) Limited

VGS=10V

DC[PD=500mW]

package mounte d

on glass-epoxy

substrate.

(9*19*1mm)

[PD=900mW]

1sec

VDD=30V

Duty1%

Inputtr, tf

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6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 JapanKeep safety first in your circuit designs!

ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, butthere is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire orproperty damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measuressuch as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction ormishap.

Notes regarding these materialsThese materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customers application; they don't convey any license under any intellectual property rights, or any other rights, belongingISAHAYA or third party.ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights,originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.

All information contained in these materials, including product data, diagrams and charts, represent information on productsat the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without noticedue to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA ElectronicsCorporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listedherein.

ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is usedunder circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or anauthorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part thesematerials.

If these products or technologies are subject to the Japanese export control restrictions, they must be exported under alicense from the Japanese government and cannot be imported into a country other than the approved destination. Anydiversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination isprohibited.

Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on thesematerials or the products contained therein.

Jun.2010

ink0210ap1

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