Influence of TiO2 Nano-particles on performance of Fabricated Organic Zener

diode

Presented ByAhmed Mohamed El-Sayed

El-MahalawyThin Film laboratory, Physics Department, Faculty of Science, Suez Canal University, Ismailia, Egypt

Faculty of SciencePhysics DepartmentThin Film Lab

Organic Semiconductors

Inorganic Semiconductors

Organic Semiconductors

Rigid and should be prepared on glass, Si, GaAs, ….or any rigid

substrate.

Lighter, more flexible, compatible with plastic substrates and have

high electron mobility. Advantages

Needs high vacuum techniques and high

cost

Biodegradable, and not explained in details yet

Disadvantages

Ultra Clean room No vacuum and no high temperature processes(60-120oC)

Processing

Very high cost$100 / ft2

Low cost in high large production $5 / ft2

Cost

Organic Electronics Revolution

Organic LED

Organic PVC

Organic FET

Organic RFIDFirst Organic Microprocessor

(2015)

Experimental Work

1- Thin films of NTCDA were prepared using physical vapor deposition technique Edwards

E306A

10 20 30 40 50 60 70 800

20

40

60

80

100

120

140

160

180

200

(215

)

(11

6)(204

)(211

)

(200

)

(004

)

Inte

nsit

y (A

rb.U

nit)

(101

)

2degree)

Spin coated Tio2

2- Thin films of TiO2 were prepared using spin coating unit as interlayer between NTCDA and

NiTTP

10 20 30 40 50 60 70 800

500

1000

1500

2000

2500

3000

3500

(300

)(200

)

(100

)

Inte

nsity

(A

rb.U

nit)

(2o)

As-deposited NTCDA thin film

(C14 H4 O6)

Preparation of Organic Zener Diode

Characterization the Prepared Devices

• The current–voltage (I–V) characteristics of the fabricated devices were investigated at room temperature by using a computerized electrometer 6517B under dark condition

-16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16-1.50x10-6

-1.25x10-6

-1.00x10-6

-7.50x10-7

-5.00x10-7

-2.50x10-7

0.00

2.50x10-7

5.00x10-7

7.50x10-7

1.00x10-6

1.25x10-6

I(A

)

V(Volt)

Forward Baising Reverse Baising

NiTPP/NTCDA diode

-16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16-2.5x10-5

-2.0x10-5

-1.5x10-5

-1.0x10-5

-5.0x10-6

0.0

5.0x10-6

1.0x10-5

1.5x10-5

2.0x10-5

2.5x10-5

I(A

)

V(Volt)

Forward Baising Reverse Baising

NiTPP/TiO2/NTCDA diode

-16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12

-22

-20

-18

-16

-14

-12

-10 NTCDA/NiTTP

NTCDA/TiO2/NiTTP

ln(I

,A)

V(volt)

-16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 120

1x108

2x108

3x108

4x108

5x108

R(O

hm)

V(Volt)

NTCDA/NiTTP NTCDA/TiO

2/NiTTP

Our prepared organic zener diode Commercial zener diodes

15volt( with and without TiO2) 15Volt (RD16S ) Breakdown voltage

1.4 μA (without interlayer)and 21 μA (with TiO2 interlayer)

21 μA (RD2.0S to RD120S and 1N5221B - 1N5263B) Reverse current

1.1×106Ω (without interlayer)2.9 ×104Ω (with TiO2 interlayer)

3.2 ×104Ω (RD2.0S to RD120S

Dynamic resistance

Future work

• Organic zener diode was successfully fabricated using NTCDA as (N-type semiconductor) and NiTTP as (P-type semiconductor)

• TiO2 nano-particels interlayer improved the performance of NTCDA/NiTTP zener diode which was comparable to commercial zener diodes.

Conclusion

• We are going to complete this experiment by investigating the effect of interlayer thickness.

• We are planning to exploit sensitivity of NTCDA in fabrication gas sensors in the form of diode

• We are planning to use this potential organic material NTCDA in photovoltaic applications in elastic forms.

The Only Published Organic Zener Diode