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RF & Protect ion Devices

Data Sheet Revision 1.1, 2012-09-17

BFP640ESDRobust Low Noise Silicon Germanium Bipolar RF Transistor

Edition 2012-09-17Published byInfineon Technologies AG81726 Munich, Germany© 2013 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

http://www.infineon.com

BFP640ESD

Data Sheet 3 Revision 1.1, 2012-09-17

Trademarks of Infineon Technologies AGAURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,thinQ!™, TRENCHSTOP™, TriCore™.

Other TrademarksAdvance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSARdevelopment partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ ofHilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared DataAssociation Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ ofMathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor GraphicsCorporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATAMANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ ofOmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RFMicro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of TexasInstruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of DiodesZetex Limited.Last Trademarks Update 2011-11-11

BFP640ESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor

Revision History: 2012-09-17, Revision 1.1Page Subjects (major changes since previous revision)

This data sheet replaces the revision from 2010-06-29. The product itself has not been changed and the device characteristics remain unchanged.Only the product description and information available in the data sheet have been expanded and updated.

BFP640ESD

Table of Contents


Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Table of Contents

BFP640ESD

List of Figures


Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Figure 5-1 BFP640ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA. . . . . . . . . . . . . 17Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 18Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 19Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . 20Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . 22Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 5-14 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . 23Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . 24Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . 25Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Figure 7-3 Marking Description (Marking BFP640ESD: T4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

List of Figures

BFP640ESD

List of Tables


Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 5-1 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Table 5-2 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Table 5-3 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Table 5-4 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 5-5 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 5-6 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 5-7 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 5-8 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 5-9 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 5-10 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16Table 5-11 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

List of Tables

BFP640ESD

Product Brief


1 Product Brief

The BFP640ESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’sreliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector designsupports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA. The device is especially suited for mobileapplications in which low power consumption is a key requirement. The typical transition frequency isapproximately 45 GHz, hence the device offers high power gain at frequencies up to 10 GHz in amplifierapplications. The transistor is fitted with internal protection circuits, which enhance the robustness againstelectrostatic discharge (ESD) and high levels of RF input power. The device is housed in an easy to use plasticpackage with visible leads.

BFP640ESD

Features


2 Features

Applications

As Low Noise Amplifier (LNA) in• Mobile portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5 / 3.5 / 5 GHz, UWB,

Bluetooth• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and

C-band LNB• Multimedia applications such as mobile / portable TV, CATV, FM radio• 3G/4G UMTS/LTE mobile phone applications• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applicationsAs discrete active mixer, amplifier in VCOs and buffer amplifier

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

• Robust very low noise amplifier based on Infineon´s reliable,high volume SiGe:C wafer technology

• 2 kV ESD robustness (HBM) due to integrated protection circuits• High maximum RF input power of 21 dBm• 0.65 dB minimum noise figure typical at 1.5 GHz,

0.7 dB at 2.4 GHz, 6 mA• 26.5 dB maximum gain Gms typical at 1.5 GHz,

23 dB Gms at 2.4 GHz, 30 mA• 27 dBm OIP3 typical at 2.4 GHz, 30 mA• Easy to use Pb-free (RoHS compliant) and halogen-free standard

package with visible leads• Qualification report according to AEC-Q101 available

Product Name Package Pin Configuration MarkingBFP640ESD SOT343 1 = B 2 = E 3 = C 4 = E T4s

BFP640ESD

Maximum Ratings


3 Maximum Ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.

Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)Parameter Symbol Values Unit Note / Test Condition

Min. Max.Collector emitter voltage VCEO Open base

– 4.1 V TA = 25 °C– 3.6 V TA = -55 °C

Collector base voltage1)

1) Low VCBO due to integrated protection circuits.

VCBO Open emitter– 4.8 V TA = 25 °C– 4.3 V TA = -55 °C

Collector emitter voltage2)

2) VCES is identical to VCEO due to integrated protection circuits.

VCES E-B short circuited– 4.1 V TA = 25 °C– 3.6 V TA = -55 °C

Base current3)

3) Sustainable reverse bias current is high due to integrated protection circuits.

IB -10 6 mA –Collector current IC – 50 mA –RF input power4)

4) RF input power is high due to integrated protection circuits.

PRFin – 21 dBm –ESD stress pulse5)

5) ESD robustness is high due to integrated protection circuits.

VESD -2 2 kV HBM, all pins, acc. toJESD22-A114

Total power dissipation6)

6) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.

Ptot – 200 mW TS ≤ 88 °CJunction temperature TJ – 150 °C –Storage temperature TStg -55 150 °C –

BFP640ESD

Thermal Characteristics


4 Thermal Characteristics

Figure 4-1 Total Power Dissipation Ptot = f (Ts)

Table 4-1 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Junction - soldering point1)

1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation).RthJS – 310 – K/W –

0 25 50 75 100 125 1500

50

100

150

200

250

TS [°C]

Pto

t [m

W]

BFP640ESD

Electrical Characteristics


5 Electrical Characteristics

5.1 DC Characteristics

5.2 General AC Characteristics

Table 5-1 DC Characteristics at TA = 25 °CParameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Collector emitter breakdown voltage V(BR)CEO 4.1 4.7 – V IC = 1 mA, IB = 0

Open baseCollector emitter leakage current ICES – – 500 nA VCE = 2 V, VBE = 0

E-B short circuitedCollector base leakage current ICBO – – 500 nA VCB = 2 V, IE = 0

Open emitterEmitter base leakage current IEBO – – 10 μA VEB = 0.5 V, IC = 0

Open collectorDC current gain hFE 110 180 270 VCE = 3 V, IC = 30 mA

Pulse measured

Table 5-2 General AC Characteristics at TA = 25 °CParameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Transition frequency fT – 45 – GHz VCE = 3 V, IC = 30 mA,

f = 1 GHzCollector base capacitance CCB – 0.08 – pF VCB = 3 V, VBE = 0 V

f = 1 MHzEmitter grounded

Collector emitter capacitance CCE – 0.4 – pF VCE = 3 V, VBE = 0 Vf = 1 MHzBase grounded

Emitter base capacitance CEB – 0.7 – pF VEB = 0.4 V, VCB = 0 Vf = 1 MHzCollector grounded

BFP640ESD



5.3 Frequency Dependent AC Characteristics

Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C

Figure 5-1 BFP640ESD Testing Circuit

Table 5-3 AC Characteristics, VCE = 3 V, f = 150 MHzParameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Maximum power gain dBLow noise operation point Gms – 34 – IC = 6 mAHigh linearity operation point Gms – 39.5 – IC = 30 mATransducer gain dB ZS = ZL = 50 ΩLow noise operation point S21 – 25 – IC = 6 mAHigh linearity operation point S21 – 35 – IC = 30 mAMinimum noise figure dB ZS = Zopt

Minimum noise figure NFmin – 0.6 – IC = 6 mAAssociated gain Gass – 30 – IC = 6 mALinearity dBm ZS = ZL = 50 Ω1 dB gain compression point OP1dB – 11 – IC = 30 mA3rd order intercept point OIP3 – 25 – IC = 30 mA

IN

OUTBias-T

Bias-TB

(Pin 1)

E C

E

VCTop View

VB

BFP640ESD




Min. Typ. Max.Maximum power gain dBLow noise operation point Gms – 29 – IC = 6 mAHigh linearity operation point Gms – 34.5 – IC = 30 mATransducer gain dB ZS = ZL = 50 ΩLow noise operation point S21 – 24.5 – IC = 6 mAHigh linearity operation point S21 – 32 – IC = 30 mAMinimum noise figure dB ZS = Zopt

Minimum noise figure NFmin – 0.6 – IC = 6 mAAssociated gain Gass – 28.5 – IC = 6 mALinearity dBm ZS = ZL = 50Ω1 dB gain compression point OP1dB – 11 – IC = 30 mA3rd order intercept point OIP3 – 25 – IC = 30 mA



Minimum noise figure NFmin – 0.6 – IC = 6 mAAssociated gain Gass – 26 – IC = 6 mALinearity dBm ZS = ZL = 50 Ω1 dB gain compression point OP1dB – 11.5 – IC = 30 mA3rd order intercept point OIP3 – 26 – IC = 30 mA

BFP640ESD



Table 5-6 AC Characteristics, VCE = 3 V, f = 1.5 GHzParameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Maximum power gain dBLow noise operation point Gms – 23.5 – IC = 6 mAHigh linearity operation point Gms – 26.5 – IC = 30 mATransducer gain dB ZS = ZL = 50 ΩLow noise operation point S21 – 21 – IC = 6 mAHigh linearity operation point S21 – 24 – IC = 30 mAMinimum noise figure dB ZS = Zopt

Minimum noise figure NFmin – 0.65 – IC = 6 mAAssociated gain Gass – 23.5 – IC = 6 mALinearity dBm ZS = ZL = 50 Ω1 dB gain compression point OP1dB – 12 – IC = 30 mA3rd order intercept point OIP3 – 26.5 – IC = 30 mA


Min. Typ. Max.Maximum power gain dBLow noise operation point Gms – 22.5 – IC = 6 mAHigh linearity operation point Gms – 25 – IC = 30 mATransducer gain dB ZS = ZL = 50 ΩLow noise operation point S21 – 19.5 – IC = 6 mAHigh linearity operation point S21 – 22 – IC = 30 mAMinimum noise figure dB ZS = Zopt

Minimum noise figure NFmin – 0.65 – IC = 6 mAAssociated gain Gass – 22 – IC = 6 mALinearity dBm ZS = ZL = 50 Ω1 dB gain compression point OP1dB – 12 – IC = 30 mA3rd order intercept point OIP3 – 27 – IC = 30 mA

BFP640ESD




Min. Typ. Max.Maximum power gain dBLow noise operation point Gms – 21 – IC = 6 mAHigh linearity operation point Gms – 23 – IC = 30 mATransducer gain dB ZS = ZL = 50 ΩLow noise operation point S21 – 18 – IC = 6 mAHigh linearity operation point S21 – 20 – IC = 30 mAMinimum noise figure dB ZS = Zopt

Minimum noise figure NFmin – 0.7 – IC = 6 mAAssociated gain Gass – 20 – IC = 6 mALinearity dBm ZS = ZL = 50 Ω1 dB gain compression point OP1dB – 12.5 – IC = 30 mA3rd order intercept point OIP3 – 27 – IC = 30 mA


Min. Typ. Max.Maximum power gain dBLow noise operation point Gma – 19 – IC = 6 mAHigh linearity operation point Gms – 19 – IC = 30 mATransducer gain dB ZS = ZL = 50 ΩLow noise operation point S21 – 15 – IC = 6 mAHigh linearity operation point S21 – 17 – IC = 30 mAMinimum noise figure dB ZS = Zopt

Minimum noise figure NFmin – 0.8 – IC = 6 mAAssociated gain Gass – 16 – IC = 6 mALinearity dBm ZS = ZL = 50 Ω1 dB gain compression point OP1dB – 12.5 – IC = 30 mA3rd order intercept point OIP3 – 26.5 – IC = 30 mA

BFP640ESD



Notes1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1.2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all

measured result.3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this

measurement is 50 Ω from 0.2 MHz to 12 GHz.


Min. Typ. Max.Maximum power gain dBLow noise operation point Gma – 14 – IC = 6 mAHigh linearity operation point Gma – 14.5 – IC = 30 mATransducer gain dB ZS = ZL = 50 ΩLow noise operation point S21 – 11 – IC = 6 mAHigh linearity operation point S21 – 12.5 – IC = 30 mAMinimum noise figure dB ZS = Zopt

Minimum noise figure NFmin – 1.05 – IC = 6 mAAssociated gain Gass – 11.5 – IC = 6 mALinearity dBm ZS = ZL = 50 Ω1 dB gain compression point OP1dB – 12.5 – IC = 30 mA3rd order intercept point OIP3 – 26 – IC = 30 mA

Table 5-11 AC Characteristics, VCE = 3 V, f = 10 GHzParameter Symbol Values Unit Note / Test Condition


Minimum noise figure NFmin – 2 – IC = 6 mAAssociated gain Gass – 7 – IC = 6 mALinearity dBm ZS = ZL = 50 Ω1 dB gain compression point OP1dB – 11 – IC = 30 mA3rd order intercept point OIP3 – 25.5 – IC = 30 mA

BFP640ESD



5.4 Characteristic DC Diagrams

Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA

Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VCE[V]

I C[m

A]

IB=25µA

IB=75µA

IB=125µA

IB=175µA

IB=225µA

IB=275µA

IB=325µA

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VCE[V]

I C[m

A]

IB=25µA

IB=75µA

IB=125µA

IB=175µA

IB=225µA

IB=275µA

IB=325µA

100

1000

0.1 1 10 100

IC [mA]

hFE

BFP640ESD



Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V

Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V

0.00001

0.0001

0.001

0.01

0.1

1

10

100

0.4 0.5 0.6 0.7 0.8 0.9

VBE [V]

IC [m

A]

0.000001

0.00001

0.0001

0.001

0.01

0.1

1

0.4 0.5 0.6 0.7 0.8 0.9

VBE [V]

IB [m

A]

BFP640ESD



Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

0.2 0.3 0.4 0.5 0.6

VEB [V]

IB [A

]

BFP640ESD



5.5 Characteristic AC Diagrams

Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V

Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters

0 10 20 30 40 50 600

5

10

15

20

25

30

35

40

45

50

IC

[mA]

f T [G

Hz]

4.00V 3.00V

2.50V

2.00V

1.00V

0 10 20 30 40 50−5

0

5

10

15

20

25

30

IC

[mA]

OIP

3 [dB

m]

2V, 1.5GHz3V, 1.5GHz2V, 2.4GHz3V, 2.4GHz

BFP640ESD



Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz

Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA

0 0.5 1 1.5 2 2.5 3 3.5 40

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

VCB

[V]

Ccb

[pF

]

0 1 2 3 4 5 6 7 8 9 100

5

10

15

20

25

30

35

40

45

50

f [GHz]

G [d

B]

Gms

Gma

|S21

|2

Gms

BFP640ESD



Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz

Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz

0 10 20 30 40 50 600

3

6

9

12

15

18

21

24

27

30

33

36

39

42

IC

[mA]

G [d

B]

10.00GHz

5.50GHz

3.50GHz

2.40GHz 1.90GHz 1.50GHz

0.90GHz

0.45GHz

0.15GHz

0 1 2 3 4 50

3

6

9

12

15

18

21

24

27

30

33

36

39

42

VCE

[V]

G [d

B]

10.00GHz

5.50GHz

3.50GHz

2.40GHz 1.90GHz 1.50GHz

0.90GHz

0.45GHz

0.15GHz

BFP640ESD



Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 30 mA

Figure 5-14 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 30 mA

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

1

1

2

2

3

3

4

4

5 5

6 6 7

7 8

8 9

9 10

10

0.03 to 10 GHz

30 mA6 mA

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

0.45GHz

0.9GHz1.9GHz

2.4GHz

5.5GHz

10GHz

Ic = 6.0mA

Ic = 30mA

BFP640ESD



Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 30 mA

Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt

10.1 0.2 0.3 0.4 0.5 21.5 3 4 50

1

−1

1.5

−1.5

2

−2

3

−3

4

−4

5

−5

10

−10

0.5

−0.5

0.1

−0.1

0.2

−0.2

0.3

−0.3

0.4

−0.4

1

1

2

2

3

3

4

4

5

5

6

6

7

7

8 8

9 9

10 10

0.03 to 10 GHz

30 mA6 mA

0 2 4 6 8 100

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

NF

min

[dB

]

f [GHz]

IC

= 6.0mAIC

= 30mA

BFP640ESD



Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz

Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz

Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25°C.

0 10 20 30 40 500

0.5

1

1.5

2

2.5

3

3.5

4

f = 1.9GHz

f = 5.5GHzf = 2.4GHz

f = 0.9GHzf = 0.45GHz

f = 10GHz

NF

min

[dB

]

Ic [mA]

0 10 20 30 40 500

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

f = 1.9GHz

f = 5.5GHzf = 2.4GHz

f = 0.9GHzf = 0.45GHz

f = 10GHz

NF

50 [d

B]

Ic [mA]

BFP640ESD

Simulation Data


6 Simulation Data

For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) pleaserefer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latestversions before actually starting your design.You find the BFP640ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import intothese circuit simulation tools very quickly and conveniently. The model already contains the package parasiticsand is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to thepin configuration of the device.The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP640ESDSPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICEGP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation havebeen extracted.

BFP640ESD

Package Information SOT343


7 Package Information SOT343

Figure 7-1 Package Outline

Figure 7-2 Package Footprint

Figure 7-3 Marking Description (Marking BFP640ESD: T4s)

Figure 7-4 Tape Dimensions

SOT343-PO V08

1.25

±0.1

0.1 MAX.

2.1±

0.1

0.15 +0.1-0.050.3 +0.1

2 ±0.2±0.10.9

3

2

4

1

A

+0.10.6AM0.2

1.3

-0.05

-0.05

0.15

0.1 M

4x

0.1

0.1

MIN

.0.6

SOT343-FP V08

0.8

1.6

1.15

0.9

XYs56

Date code (YM)2005, June

Type code

Manufacturer

Pin 1

SOT323-TP V02

0.24

2.15

8

2.3

1.1Pin 1

Published by Infineon Technologies AG

w w w . i n f i n e o n . c o m

http://www.infineon.com

infineon robust sige gps lna bfp640esd rev. 1 · 2016-11-15 · bfp640esd product brief data sheet...

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