ild74

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FEATURES

7400 Series T2L Compatible Transfer Ratio, 35% Typical

Coupling Capacitance, 0.5 pF

Single, Dual, & Quad Channel

Industry Standard DIP Package

Underwriters Lab File #E52744

VDE Approvals #0884

(Optional with Option 1, Add -X001 Suffix)

DESCRIPTION

The IL74 is an optically coupled pair with a Gal-

lium Arsenide infrared LED and a silicon NPN

phototransistor. Signal information, including a

DC level, can be transmitted by the device while

maintaining a high degree of electrical isolationbetween input and output. The IL74 is especially

designed for d riving medium-speed logic, where

it may be used to eliminate troublesome gound

loop and noise problems. Also it can be used to

replace relays and transformers in many digital

interface applications, as well as analog applica-

tions such as CRT modulation.

The ILD74 has two isolated channels in a single

DIP package; the ILQ74 has four isolated chan-

nels per package.

VD E

Dimensions in inches (mm)

.008 (.20)

.012 (.31)

.130 (3.30)

.150 (3.81)

.130 (3.30)

.150 (3.81).280 (7.11).330 (8.38)

.020 (.51)

.030 (.76)

.300 (7.62)typ.

3 to 9.0255 (.65)typ.

.100 (2.54) typ.

.040 (1.02)

.050 (1.27)

.016 (.41)

.020 (.51)

123

.240 (6.10)

.260 (6.60)

.780 (19.81)

.800 (20.32)

pin oneID.

149

8

.048 (1.22)

.052 (1.32)

.033 (.84)typ.

1615

.034 (.86)

67 45

10 11 12 13

.014(.35)typ.

1

2

3

4

8

7

6

5

Emitter

Collector

Collector

Emitter

Anode

Cathode

Cathode

Anode

16

15

14

13

12

11

10

9

1

2

3

4

5

6

7

8

Emitter

Collector

Collector

Emitter

Emitter

Collector

Collector

Emitter

Anode

Cathode

Cathode

Anode

Anode

Cathode

Cathode

Anode

1

2

3

6

5

4

Base

Collector

Emitter

Anode

Cathode

NC

.010 (.25)

.014 (.35)

.110 (2.79)

.150 (3.81)

.130 (3.30)

.150 (3.81)

.020 (.051) min.

.300 (7.62)

typ.

.031 (0.80)

.035 (0.90).100 (2.54) typ.

.039(1.00)

min.

.018 (0.45)

.022 (0.55)

.248 (6.30)

.256 (6.50)

.335 (8.50)

.343 (8.70)

Pin One ID.

654

123

18 typ.

.300 (7.62)

.347 (8.82)

4typ.

.268 (6.81)

.255 (6.48)

34

65

.390 (9.91)

.379 (9.63)

.045 (1.14)

.030 (.76)

4Typ.

.100 (2.54) Typ.

10Typ.39

.305 typ.

(7.75) typ.

.022 (.56)

.018 (.46).012 (.30).008 (.20)

.135 (3.43)

.115 (2.92)

12

87

Pin One I.D.

.150 (3.81)

.130 (3.30)

.040 (1.02)

.030 (.76 )

SINGLE CHANNEL

IL74

DUAL CHANNEL

ILD74

QUAD CHANNEL

ILQ74

PHOTOTRANSISTOR OPTOCOUPLER

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Maximum Ratings

Emitter (each channel)

Peak Reverse Voltage .....................................3.0 V

Continuous Forward Current .........................60 mA

Power Dissipationat 25

C...........................100 mW

Derate Linearly from 25

C....................1.33 mW/

C

Detector (each channel)

Collector-Emitter Breakdown Voltage ..............20 V

Emitter-Base Breakdown Voltage .......................5 V

Collector-Base Breakdown Voltage .................70 V

Power Dissipation at 25

C..........................150 mW


C......................2.0 mW/

C

Package

Isolation Test Voltage (t=1 sec.) ........5300 VAC

RMS

Isolation Resistance

V

IO

=500 V, T

A

=25

C ...............................

10

12

V

IO

=500 V, T

A

=100

C .............................

10

11

Total Package Dissipation

at 25

C Ambient (LED Plus Detector)

IL74.........................................................200 mW

ILD74 ......................................................400 mW

IL74Q......................................................500 mW


C

IL74.....................................................2.7 mW/

CILD74 ................................................5.33 mW/

C

ILQ74................................................6.67 mW/

C

Creepage ...............................................7 mm min.

Clearance...............................................7 mm min.

Storage Temperature ...................55

C to +150

C

Operating Temperature ...............55

C to +100

C

Lead Soldering Time at 260

C .................... 10 sec.

Electrical Characteristics (T

A

=25

C)

Symbol Min. Typ. Max. Unit Condition

Emitter

Forward Voltage V

F

1.3 1.5 V I

F

=20 mA

Reverse Current I

R

0.1 100

A V

R

=3.0 V

Capacitance C

O

25 pF V

R

=0

Detector

BreakdownVoltage,Collector-Emitter

BV

CEO

20 50 V I

C

=1 mA

Leakage Current,Collector-Emitter

I

CEO

5.0 500 nA V

CE

=5 V,I

F

=0

Capacitance,Collector-Emitter

C

CE

10.0 pF V

CE

=0,F=1 MHz

Package

DC Current Trans-fer Ratio

CTR

DC

12.5 35 % I

F

=16 mA,V

CE

=5 V

Saturation Voltage,Collector-Emitter

V

CEsat

0.3 0.5V

I

C

=2 mA,I

F

=16 mA

Resistance, Inputto Output R

IO

100 G

Capacitance, Inputto Output C

IO

0.5 pF

Switching Times t

ON

,t

OFF

3.0

s R

E

=100

,V

CE

=10 V,I

C

=2 mA

Figure 1. Forward voltage versus forward current

Figure 2. Normalized non-saturated and saturated

CTR at T

A

=25

C versus LED current


CTR at T

A

=50



CTR at T

A

=70


100101.10.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

IF - Forward Current - mA

VF

-ForwardVoltage-V Ta = -55C

Ta = 25C

Ta = 85C

100101.1

0.0

0.5

1.0

1.5

NCTR(SAT)NCTR

IF - LED Current - mA

Normalized to:Vce = 10V, IF = 10mA

Ta = 25C

CTRce(sat) Vce = 0.4V

NCTR-

Norma

lize

d

CTR

100101.10.0

0.5

1.0

1.5

NCTR(SAT)

NCTR


Normalized to:Vce = 10V, IF = 10mA, Ta = 25

Ta = 50C


NCTR-Norm

alizedCTR

100101.1

0.0

0.5

1.0

1.5

NCTR(SAT)NCTR


NCTR-Normalized

CTR Vce = 10V, IF = 10mA

Ta = 25C

Ta = 70C


Normalized to:

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Figure 5. Normalized non-saturated and saturated CTR

at T

A

=85


Figure 6. Collector-emitter current versus temperature

and LED current

Figure 7. Collector-emitter leakage current versus

temperature

Figure 8. Normalized CTRcb versus LED current

and temperature

100101.10.0

0.5

1.0

1.5

NCTR(SAT)NCTR

Normalized to:Vce = 10V, IF = 10mA, Ta = 25C

Ta = 85C



NC

TR

-Normalized

CTR

6050403020100

0

5

10

15

20

25

30

35

50C

70C

85C


Ice-

Co

llecto

rCurren

t-m

A

25C

100806040200-2010

10

10

10

10

10

10

10

-2

-1

0

1

2

3

4

5

Ta - Ambient Temperature - C

Iceo

-Collector-Em

itter-nA

TYPICAL

Vce = 10V

.1 1 10 100

0.0

0.5

1.0

1.5

25C

50C

70C


NCTRcb-NormalizedCTRcb Normalized to:

IF =10 mA

Vcb = 9.3 V

Ta = 25C

Figure 9. Collector base photocurrent versus LED

current

Figure 10. Normalized photocurrent versus If and

temperature

Figure 11. Normalized non-saturated HFE versus

base current and temperature

Figure 12. Normalized saturated HFE versus base

current and temperature

100101.1

.01

.1

1

10

100

1000


Icb-CollectorBase

Photocurrent-A

Icb = 1.0357 *IF ^1.3631

Ta = 25C

100101.1.01

.1

1

10

NIB-Ta=-20C

NIb,Ta=25C

NIb,Ta=50C

NIb,Ta=70C

Norma

lize

d

Pho

tocurren

t

Normalized to:

If = 10ma, Ta = 25C

1 10 100 1000

0.4

0.6

0.8

1.0

1.2

Ib - Base Current - A

NHFE-Normalized

HFE

Ib = 20AVce = 10 V

Ta = 25C-20C

25C

50C70C Normalized to:

1 10 100 1000

0.0

0.5

1.0

1.5

Ib - Base Current - (A)

NHFE(sat)-Normalized

Saturated

HFE

-20

25C

5070Normalized to:Vce = 10V

Ib = 20A

Ta = 25

Vce = 0.4V

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Figure 14. Propagation delay versus collector load resis-

tor

100101.11

10

100

1000

1.0

1.5

2.0

2.5

RL - Collector Load Resistor - K

tpLH-

PropagationDelay

-s

tpHL-PropagationDelay-s

tpLH

tpHL

Ta = 25C, IF = 10m

Vcc = 5 V, Vth = 1.5 V

Figure 13. Propagation delay versus collector load resis-

tor

100101.11

10

100

1000

1.0

1.5

2.0

2.5

RL - Collector Load Resistor - K

tpLH

-Propagation

Delay

-s

tpH

L

-Propagation

Delay-s

tpLH

tpHL

Ta = 25C, IF = 10m

Vcc = 5 V, Vth = 1.5 V

8/6/2019 ILD74

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ild74

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