ikw75n65et7 • reduced emi • short tail current = 175°c

Low Loss Duopack: IGBT 7 with Trench and Fieldstop technology

Features• VCE = 650 V• IC = 75 A• Very Low VCEsat

• Low turn-off losses• Short tail current• Reduced EMI• Humidity robust design• Very soft, fast recovery antiparallel diode• Maximum junction temperature Tvjmax = 175°C• Qualified according to JEDEC for target applications• Pb-free lead plating; RoHS compliant• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt7/Potential applications• Servo Drives• General Purpose Drives (GPD)• Industrial UPS• Industrial SMPS• Solar Optimizer• Solar String InverterProduct validation• Product Validation: Qualified for industrial applications according to the relevant tests of

JEDEC47/20/22

GC

E

DescriptionPackage pin definition:• Pin C & backside - Collector• Pin E - Emitter• Pin G - Gate

G

C

E

Type Package MarkingIKW75N65ET7 PG-TO247-3 K75EET7

IKW75N65ET7Low Loss Duopack: IGBT 7

Datasheet Please read the Important Notice and Warnings at the end of this document 1.00www.infineon.com 2021-06-29

https://www.infineon.com

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19


Table of contents

Datasheet 2 1.002021-06-29

1 Package

Table 1 Characteristic values

Parameter Symbol Note or test condition Values Unit

Min. Typ. Max.

Internal emitter inductancemeasured 5 mm (0.197 in)from case

LE 13.0 nH

Storage temperature Tstg -55 150 °C

Soldering temperature wave soldering 1.6 mm (0.063 in.) from casefor 10 s

260 °C

Mounting torque, M3 screwMaximum of mountingprocesses: 3

M 0.6 Nm

Thermal resistance,junction-ambient

Rth(j-a) 40 K/W

2 IGBT

Table 2 Maximum rated values


Collector-emitter voltage VCE Tvj ≥ 25 °C 650 V

DC collector current, limitedby Tvjmax

IC limited by bondwire TC = 25 °C 80 A

TC = 100 °C 78.5

Pulsed collector current, tplimited by Tvjmax 1)

ICpuls 225 A

Turn-off safe operatingarea2)

VCE ≤ 650 V, tP = 1 µs, Tvj ≤ 175 °C 225 A

Gate-emitter voltage VGE ±20 V

Transient gate-emittervoltage

VGE tp ≤ 10 µs, D < 0.010 ±30 V

Short circuit withstand time tSC VGE = 15 V, Allowednumber of short circuits< 1000, Time betweenshort circuits ≥ 1.0 s

VCC ≤ 330 V,Tvj = 100 °C

5 µs

VCC ≤ 400 V,Tvj = 150 °C

3

Power dissipation Ptot TC = 25 °C 333 W

TC = 100 °C 167

1) Defined by design. Not subject to production test.2) Clamped inductive load current test for each device, IC=225A, VCC=400V, Tc=25°C, VGE=20V, L=80µH, RG=10Ω


1 Package

Datasheet 3 1.002021-06-29



Min. Typ. Max.

Collector-emitter saturationvoltage

VCE sat IC = 75.0 A, VGE = 15 V Tvj = 25 °C 1.35 1.65 V

Tvj = 125 °C 1.50

Tvj = 175 °C 1.60

Gate-emitter thresholdvoltage

VGEth IC = 0.75 mA, VCE = VGE 4.30 5.00 5.70 V

Zero gate voltage collectorcurrent

ICES VCE = 650 V, VGE = 0 V Tvj = 25 °C 40 µA

Tvj = 175 °C 1200

Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V 100 nA

Transconductance gfs IC = 75.0 A, VCE = 20 V 40 S

Short circuit collectorcurrent

ISC VGE = 15 V, tSC ≤ 3 µs, Allowed number ofshort circuits < 1000 , Time between shortcircuits ≥ 1.0 s

350 A

Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 1000 kHz 4460 pF

Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 1000 kHz 135 pF

Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 1000 kHz 46 pF

Gate charge QG IC = 75.0 A, VGE = 15 V, VCE = 520 V 435 nC

Turn-on delay time tdon VCE = 400 V, VGE = 15 V,RGon = 4.7 Ω,RGoff = 4.7 Ω, Lσ = 32 nH,Cσ = 30 pF

Tvj = 25 °C,IC = 75.0 A

28 ns

Tvj = 25 °C,IC = 37.5 A

26

Tvj = 175 °C,IC = 75.0 A

31

Tvj = 175 °C,IC = 37.5 A

28

Rise time (inductive load) tr VCE = 400 V, VGE = 15 V,RGon = 4.7 Ω,RGoff = 4.7 Ω, Lσ = 32 nH,Cσ = 30 pF

Tvj = 25 °C,IC = 75.0 A

25 ns

Tvj = 25 °C,IC = 37.5 A

13

Tvj = 175 °C,IC = 75.0 A

30

Tvj = 175 °C,IC = 37.5 A

18


2 IGBT

Datasheet 4 1.002021-06-29

Table 3 Characteristic values (continued)


Min. Typ. Max.

Turn-off delay time tdoff VCE = 400 V, VGE = 15 V,RGon = 4.7 Ω,RGoff = 4.7 Ω, Lσ = 32 nH,Cσ = 30 pF

Tvj = 25 °C,IC = 75.0 A

310 ns

Tvj = 25 °C,IC = 37.5 A

330

Tvj = 175 °C,IC = 75.0 A

365

Tvj = 175 °C,IC = 37.5 A

415

Fall time (inductive load) tf VCE = 400 V, VGE = 15 V,RGon = 4.7 Ω,RGoff = 4.7 Ω, Lσ = 32 nH,Cσ = 30 pF

Tvj = 25 °C,IC = 75.0 A

15 ns

Tvj = 25 °C,IC = 37.5 A

11

Tvj = 175 °C,IC = 75.0 A

25

Tvj = 175 °C,IC = 37.5 A

20

Turn-on energy Eon VCE = 400 V, VGE = 15 V,RGon = 4.7 Ω,RGoff = 4.7 Ω, Lσ = 32 nH,Cσ = 30 pF

Tvj = 25 °C,IC = 75.0 A

2.17 mJ

Tvj = 25 °C,IC = 37.5 A

0.79

Tvj = 175 °C,IC = 75.0 A

3.45

Tvj = 175 °C,IC = 37.5 A

1.52

Turn-off energy Eoff VCE = 400 V, VGE = 15 V,RGon = 4.7 Ω,RGoff = 4.7 Ω, Lσ = 32 nH,Cσ = 30 pF

Tvj = 25 °C,IC = 75.0 A

1.23 mJ

Tvj = 25 °C,IC = 37.5 A

0.56

Tvj = 175 °C,IC = 75.0 A

2.05

Tvj = 175 °C,IC = 37.5 A

1.11


2 IGBT

Datasheet 5 1.002021-06-29



Min. Typ. Max.

Total switching energy Ets VCE = 400 V, VGE = 15 V,RGon = 4.7 Ω,RGoff = 4.7 Ω, Lσ = 32 nH,Cσ = 30 pF

Tvj = 25 °C,IC = 75.0 A

3.40 mJ

Tvj = 25 °C,IC = 37.5 A

1.35

Tvj = 175 °C,IC = 75.0 A

5.50

Tvj = 175 °C,IC = 37.5 A

2.63

IGBT thermal resistance,junction-case

Rthjc 0.45 K/W

Operating junctiontemperature

Tvj -40 175 °C

Note: Electrical Characteristic, at Tvj=25°C, unless otherwise specified.

3 Diode

Table 4 Maximum rated values


Repetitive peak reversevoltage

VRRM Tvj ≥ 25 °C 650 V

Diode forward current,limited by Tvjmax

IF limited by bondwire TC = 25 °C 80 A

TC = 100 °C 74

Diode pulsed current,limited by Tvjmax 1)

IFpuls 225 A

1) Defined by design. Not subject to production test.



Min. Typ. Max.

Diode forward voltage VF IF = 75.0 A Tvj = 25 °C 1.65 2.00 V

Tvj = 125 °C 1.60

Tvj = 175 °C 1.55

Reverse leakage current IR VR = 650 V Tvj = 25 °C 40 µA

Tvj = 175 °C 1200


3 Diode

Datasheet 6 1.002021-06-29



Min. Typ. Max.

Diode reverse recovery time trr VR = 400 V Tvj = 25 °C,IF = 75.0 A,-diF/dt = 1650 A/µs

100 ns

Tvj = 25 °C,IF = 37.5 A,-diF/dt = 2725 A/µs

70


155


125

Diode reverse recoverycharge

Qrr VR = 400 V Tvj = 25 °C,IF = 75.0 A,-diF/dt = 1650 A/µs

1.50 µC


1.15


4.40


3.36

Diode peak reverse recoverycurrent

Irrm VR = 400 V Tvj = 25 °C,IF = 75.0 A,-diF/dt = 1650 A/µs

22.0 A


34.0


41.0


43.0


3 Diode

Datasheet 7 1.002021-06-29



Min. Typ. Max.

Diode peak rate off fall ofreverse recovery current

dIrr/dt VR = 400 V Tvj = 25 °C,IF = 75.0 A,-diF/dt = 1650 A/µs

-480 A/µs


-600


-590


-500

Diode thermal resistance,junction-case

Rthjc 0.60 K/W

Operating junctiontemperature

Tvj -40 175 °C

Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% ofthe maximum ratings stated in this datasheet.


3 Diode

Datasheet 8 1.002021-06-29

4 Characteristics diagrams

Power dissipation as a function of case temperature,IGBTPtot = f(Tc)Tvj ≤ 175 °C

Collector current as a function of case temperature,IGBTIC = f(Tc)Tvj ≤ 175 °C, VGE ≥ 15 V

25 50 75 100 125 150 1750

50

100

150

200

250

300

350

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

90

Typical output characteristic, IGBTIC = f(VCE)Tvj = 25 °C

Typical output characteristic, IGBTIC = f(VCE)Tvj = 175 °C

0 1 2 3 4 50

25

50

75

100

125

150

175

200

225

0 1 2 3 4 50

25

50

75

100

125

150

175

200

225



Datasheet 9 1.002021-06-29

Typical transfer characteristic, IGBTIC = f(VGE)VCE = 20 V

Typical collector-emitter saturation voltage as afunction of junction temperature, IGBTVCEsat = f(Tvj)VGE = 15 V

2 4 6 8 10 12 140

25

50

75

100

125

150

175

200

225

25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Gate-emitter threshold voltage as a function ofjunction temperature, IGBTVGEth = f(Tvj)IC = 0.75 mA

Typical switching times as a function of collectorcurrent, IGBTt = f(IC)VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 4.7 Ω

25 50 75 100 125 1500

1

2

3

4

5

6

0 25 50 75 100 125 150 175 200 2251

10

100

1000



Datasheet 10 1.002021-06-29

Typical switching times as a function of gate resistor,IGBTt = f(RG)IC = 75.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V

Typical switching times as a function of junctiontemperature, IGBTt = f(Tvj)IC = 75.0 A, VCE = 400 V, VGE = 0/15 V, RG = 4.7 Ω

0 5 10 15 20 25 30 35 401

10

100

1000

10000

25 50 75 100 125 150 1751

10

100

1000

Typical switching energy losses as a function ofcollector current, IGBTE = f(IC)VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 4.7 Ω

Typical switching energy losses as a function of gateresistor, IGBTE = f(RG)IC = 75.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V

0 25 50 75 100 125 150 175 200 2250

5

10

15

20

25

30

35

0 5 10 15 20 25 30 35 400

2

4

6

8

10

12

14

16



Datasheet 11 1.002021-06-29

Typical switching energy losses as a function ofjunction temperature, IGBTE = f(Tvj)IC = 75.0 A, VCE = 400 V, VGE = 0/15 V, RG = 4.7 Ω

Typical switching energy losses as a function ofcollector emitter voltage, IGBTE = f(VCE)IC = 75.0 A, Tvj = 175 °C, VGE = 0/15 V, RG = 4.7 Ω

25 50 75 100 125 150 1750

1

2

3

4

5

6

7

200 250 300 350 400 450 5000

1

2

3

4

5

6

7

8

Typical gate charge, IGBTVGE = f(QGE)IC = 75.0 A

Typical capacitance as a function of collector-emittervoltage, IGBTC = f(VCE)f = 1000 kHz, VGE = 0 V

0 100 200 300 400 5000

2

4

6

8

10

12

14

16

0 5 10 15 20 25 3010

100

1000

10000



Datasheet 12 1.002021-06-29

Typical short circuit safe operating range as a functionof collector-emitter voltage, IGBTtSC = f(VCE)

Typical short circuit collector current as a function ofgate-emitter voltage, IGBTIC(SC) = f(VGE)VCE = 400 V, Tvj = 150 °C

300 310 320 330 340 350 360 370 380 390 4003.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

8 10 12 14 16 18 200

100

200

300

400

500

600

700

IGBT transient thermal resistance, IGBTZth = f(tp)D = tp/T

Diode transient thermal impedance as a function ofpulse width, DiodeZth = f(tp)D = tp/T

1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1 10.0001

0.001

0.01

0.1

1

1E-6 1E-5 0.0001 0.001 0.01 0.1 10.001

0.01

0.1

1



Datasheet 13 1.002021-06-29

Typical diode forward current as a function of forwardvoltage, DiodeIF = f(VF)

Typical diode forward voltage as a function ofjunction temperature, DiodeVF = f(Tvj)

0.0 0.5 1.0 1.5 2.0 2.5 3.00

20

40

60

80

100

120

140

160

25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Typical reverse recovery time as a function of diodecurrent slope, Diodetrr = f(diF/dt)VR = 400 V, IF = 75 A

Typical reverse recovery charge as a function of diodecurrent slope, DiodeQrr = f(diF/dt)VR = 400 V, IF = 75 A

700 900 1100 1300 1500 1700 19000

50

100

150

200

250

300

350

700 900 1100 1300 1500 1700 19000.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0



Datasheet 14 1.002021-06-29

Typical reverse recovery current as a function of diodecurrent slope, DiodeIrr = f(diF/dt)VR = 400 V, IF = 75 A

Typical diode peak rate of fall of reverse recoverycurrent as a function of diode current slope, DiodedIrr/dt = f(diF/dt)VR = 400 V, IF = 75 A

700 900 1100 1300 1500 1700 19000

5

10

15

20

25

30

35

40

45

50

700 900 1100 1300 1500 1700 1900-800

-700

-600

-500

-400

-300

-200

-100

0



Datasheet 15 1.002021-06-29

5 Package outlines

MILLIMETERS

5.44

c

Q

E3

E2

D

E

D1

D2

L1

e

L

S

P

E1

b1

A

A1

b

A2

b2

0.38

6.04

5.35

1.00

3.40

3.85

20.70

13.08

15.50

0.51

3.50

19.80

12.38

1.60

4.70

2.20

1.00

1.50

2.57

0.89

6.30

6.25

17.65

2.60

5.10

14.15

3.70

21.50

16.30

20.40

1.35

4.50

2.41

5.30

2.60

1.40

2.50

3.43

1

REVISION

06

25.07.2018

ISSUE DATE

EUROPEAN PROJECTION

0

SCALE

5mm

DOCUMENT NO.

Z8B00003327

DIMENSIONSMIN. MAX.

3:1

2 3 4

Package Drawing PG-TO247-3

Figure 6


5 Package outlines

Datasheet 16 1.002021-06-29

6 Testing conditions

t

a b

td(off) tf trtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE(t)

t

t

tt1 t4

2% IC

10% VGE

2% VCE

t2 t3

Et

tV I toff = x x d

1

2

CE C Et

tV I ton = x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,parasitic capacitor C ,relief capacitor C ,(only for ZVT switching)

ss

r

t t tQ Q Q

rr a b

rr a b

= += +

Qa Qb

V (t)CE

VGE(t)

I (t)C

V (t)CE

Figure 7


6 Testing conditions

Datasheet 17 1.002021-06-29

Revision historyDocument revision Date of release Description of changes

V0.1 2019-10-25 Target Data Sheet

V1.1 2020-04-20 Preliminary data sheet

V2.1 2020-05-12 Final data sheet

1.00 2021-06-29 Change of potential applications and new diagram added (tSC asfunction of VCE)


Revision history

Datasheet 18 1.002021-06-29

TrademarksAll referenced product or service names and trademarks are the property of their respective owners.

Edition 2021-06-29Published byInfineon Technologies AG81726 Munich, Germany © 2021 Infineon Technologies AGAll Rights Reserved. Do you have a question about anyaspect of this document?Email: [email protected] Document referenceIFX-AAL330-004

IMPORTANT NOTICEThe information given in this document shall in noevent be regarded as a guarantee of conditions orcharacteristics (“Beschaffenheitsgarantie”).With respect to any examples, hints or any typicalvalues stated herein and/or any information regardingthe application of the product, Infineon Technologieshereby disclaims any and all warranties and liabilitiesof any kind, including without limitation warranties ofnon-infringement of intellectual property rights of anythird party.In addition, any information given in this document issubject to customer’s compliance with its obligationsstated in this document and any applicable legalrequirements, norms and standards concerningcustomer’s products and any use of the product ofInfineon Technologies in customer’s applications.The data contained in this document is exclusivelyintended for technically trained staff. It is theresponsibility of customer’s technical departments toevaluate the suitability of the product for the intendedapplication and the completeness of the productinformation given in this document with respect to suchapplication.

Please note that this product is not qualifiedaccording to the AEC Q100 or AEC Q101 documentsof the Automotive Electronics Council.

WARNINGSDue to technical requirements products may containdangerous substances. For information on the typesin question please contact your nearest InfineonTechnologies office.Except as otherwise explicitly approved by InfineonTechnologies in a written document signed byauthorized representatives of Infineon Technologies,Infineon Technologies’ products may not be used inany applications where a failure of the product orany consequences of the use thereof can reasonablybe expected to result in personal injury.

mailto:[email protected]

ikw75n65et7 • reduced emi • short tail current = 175°c

Documents