ihm b modules with igbt4 (1200v and 1700v) · i. ludwisiak ifag imm inp hp copyright © infineon...

IHM B modules with IGBT4(1200V and 1700V)

Copyright © Infineon Technologies 2006. All rights reserved. I. Ludwisiak IFAG IMM INP HP

Table of content

Key applications Key applications

Characteristics and features Characteristics and features

Usage and handlingUsage and handling

Product type range Product type range

Quality and reliability Quality and reliability

Advantages versus competitor; USPAdvantages versus competitor; USP

TechnologyTechnology


Typical applications for 1200V IHM modules

Industrial drives

Auxiliary drives

UPS

Welding & Heating


Typical applications for 1700V IHM modules

Industrial drives

Traction drives

Windmills

Auxiliary drives


Technology - What is new ?

New IHM B housing

FZ

Single switch

FZ

Single switch

3600

INOM3600A

3600

INOM3600A

R17

UCE1700 V

R17

UCE1700 V

H

IHM Bhousing

H

IHM Bhousing

NEW

P4

High PowerIGBT4

P4

High PowerIGBT4

NEW

_B2

Traction version

_B2

Traction version

New IGBT4 chip


New IHM B housing is mechanically compatible to previous IHM A generation

IHM B housingIHM A housing

Both housing types are 100% mechanically compatible concerning

footprint - 130x140 mm housing

- 140x190 mm housing

mounting positions - to the heat sink

- to the bus bar

- to the PCB


IHM B are available for industry and traction applications

Applications: Traction Industry

Module features:

Base plate: AlSiC Cu

Substrate: Optimised Al2O3

Power Cycling: Optimised Standard

Thermal Cycling: Optimised Standard

Isolation: 4 kV 3,4 kV[RMS, 50Hz, 1 Min.]

Σ = Higher Reliability Σ = Cost Efficiency


The quality of the new IHM B design became improved significantly

IHM BIHM A

Part minimization, e.g. no epoxy, no internal PCB

Simplified assembly process

Higher automation level during module mounting

Use of a “1-part-housing” to avoid gaps between lid and frame


New designed main terminals offer a lot of electrical and mechanical improvements

IHM A

IHM B

Increased contact surface to the bus bar by use of circular holes instead of elongated holes

Flexibility of the main terminals by use of meanders

Improved cooling of the terminals through bigger contact surface to the DCB

Reduced stray inductance

Reduced lead resistance


New chip layout results in significantly better thermal performance of the module

Homogenous temperature distribution between the chips

Improved cooling due to smaller distance between chipsand mounting positions

Enlargement of the thermally active area by use of more diode chips (4 diode chips instead of 2)

IHM BIHM A


Improvements in the new housing generationIHM B versus IHM A in numbers

Module weight

0

300

600

900

1200

1500

1800

IHM A IHM B

wei

ght [

g]

- 20%

Module weight

0

300

600

900

1200

1500

1800

IHM A IHM B

wei

ght [

g]

- 20%

Module lead resistance

0

0,03

0,06

0,09

0,12

0,15

IHM A IHM B

Rcc'

-ee'

[mO

hm]

- 30%

Module lead resistance

0

0,03

0,06

0,09

0,12

0,15

IHM A IHM B

Rcc'

-ee'

[mO

hm]

- 30%

Module stray inductance

0

2

4

6

8

10

12

IHM A IHM B

Ls,c

e [n

H]

- 40%

Module stray inductance

0

2

4

6

8

10

12

IHM A IHM B

Ls,c

e [n

H]

- 40%


IGBT4 combines all advantages of Trench & Field-Stop Technology

! high cost "! negative TK

positive TK! high on-state

voltage

positive TK reduced losses

positive TK reduced losses increased Tj

NEW


IGBT4 can be operated at junction temperature Tvj,op = 150°C

New chip surface metallization for optimized bonding process

Increased Power Cycling capability ($ see reliability slides)

Short circuit capability for tp = 10µs t Tvj,op = 150°C

Up to 20% higher current IRMS possible by using Tvj,op = 150°C

Available in 8” wafer technology

5“ 6“ 8“


Two optimized IGBT4 types fulfill different application requirements

P4

fast switchinglow dynamic losses

E4

Switching frequency fsw

Stra

y ind

ucta

nce L

s

low dynamic lossessoft switchinglow static losses

soft switching

fast switchinglow static losses


Two IGBT4 types are available in 1200V and 1700V blocking voltage

High Power IGBT4:- with softly switching behaviour- can be used in applications with lower frequencies (fsw <= 4kHz)- is suitable for high current applications with higher stray inductance- the EMV behaviour is significantly improved

Medium Power IGBT4:- with fast switching behaviour- can be used in applications with higher frequencies (fsw <=8kHz)- is suitable for high current application with lower stray inductance- shows comparable switching performance like KE3

P4

E4


The new 1200V IGBT4 shows significantly improved switching behaviour compared to IGBT3

Comparison of IGBT4 High Power (HP4) vs. IGBT3 (KE3)

FZ2400R12KE3 vs. FZ2400R12HP4IC = 1200A, T = 25°C, without clamping

IGBT3, VCE = 350V IGBT4, VCE = 800VIGBT3 shows beginning oscillations at already VCE > 350V.IGBT4 is good controllable in the whole VCE range


The new 1700V IGBT4 shows significantly improved switching behaviour compared to IGBT3

Comparison of IGBT4 High Power (HP4) vs. IGBT3 (KE3)

FZ3600R17KE3 vs. FZ3600R17HP4IC = 3600A, VDC = 600V, T = 25°C, without clamping

IGBT3, VCE = 600V IGBT4, VCE = 900VIGBT3 shows strong oscillations and high overvoltage at already VCE > 600V.IGBT4 is good controllable in the whole VCE range


Turn-off behaviour of IGBT2 and IGBT4

FZ1600R17KF6C_B2Eoff = 461mJVCEmax = 1464Vbeginning of clamping

FZ1600R17HP4_B2Eoff = 425mJVCEmax = 1332V

Test conditions:UDC=900VIc=Inom=1600A T=25°CRgoff=0,9ΩRgon=1,2Ω, Ls=70nH

A comparison of the turn-off behaviour shows for IGBT4:

10% lower Eoff losses

130V lower overvoltage spike VCEmax

operation without clamping possible


Label of each module includes several useful information about the module

Example of a label of FZ2400R17HP4_B29 module:

For more details, see PCN 2006-11 und 2003-03

Details of bar code 128:

digit 1-5: module serial numberdigit 6-11: SAP material numberdigit 12-19: Internal production numberdigit 20-23: Date Code of productiondigit 24-25: VCEsat-classdigit 26-27: VF-class

Serial number of the module

Module type (module name)

Bar Code 128

Date Code of production(year 2008, calendar week 42)

VCEsat and VF classification(more details, see next page)


VCEsat and VF classification can be used for easier paralleling of modules

Example:26 VCEsat class 2.6

includes all VCEsat values between 2.54V – 2.64V

21 VF class 2.1includes all VF values between 2.05V – 2.14V

$ By paralleling of modules with the same VCEsat/VF class the smallest parameter distribution can be reached (∆VCEsat/F = 100mV within one VCEsat/VF class)


What is to consider during the mounting procedure?

An homogeneous and “as thin as possible” distribution of the thermal grease during mounting is important

Cavities between heat sink and module can result in hot spots (red marked area)

Dismounted base plate with not sufficient grease thickness

Dismounted base plate with sufficient grease thickness


Screen printing simplifies the mounting procedure

Homogeneous and reproducible layer of thermal grease

Grease is deposited “where it is needed”

Thickness of the grease is adjusted to cavity spec of the module

Drawing of the jig can be provided for 130x140mm and 140x190mm housing

Grease applied by screen printing after dismounting of the module- no cavities- homogeneous- “as thin as necessary”

For more details, see PCN 2004-05


A lot of reliability tests are performed on IGBT modules

Type Description Conditions Standard

Normative references

related standards

HTRB High Temperature Reverse Bias

1000h, Tj = 150°C, 0.9*VCEmax (≤ 2.0 kV), 0.8*VCEmax (>2.0 kV) 1000h, Tj = 150°C, VRM=0.9*VRRM, VRM/VDM=0.8*VRRM/VDRM

IEC 60747-2/6 ch. V IEC 60747-9:1998

EN 150000 4.5.2 EN 153000 3.5.2

HTGS High Temperature Gate Stress

1000h, ±VGEmax, Tj = 150°C according to IEC 60747-9:1998

EN 150000 4.5.2

H3TRB High Humidity High Temperature Reverse Bias

1000h, 85°C, 85%RH, VCE = 0.8*VCEmax, but max. 80 V, VGE= 0V VD, VR = 0V

IEC 60749: 1996

IEC 60068-2-3 Ca: 1985

IEC 60068-2-3 Ca: 1969 EN 150000 4.4.3

TST Thermal Shock Tstg min - Tstg max, typ. –40°C to +125°C, but ∆Tmax ≤190K tstorage ≥ 1h, tchange ≤ 30 s High Power (standard): 20 cycles; Medium Power: 50 cycles, BIP: 25 cycles

IEC 60749: 1996

IEC 60068-2-14 Na: 1984

IEC 60068-2-14 Na: 1974

EN 150000 4.4.4 EN 153000 3.4.2

TC Thermal Cycling

External heating and external cooling 2 min. < tcycl. < 6 min; ∆TC= 80K, Tcmin. = 25°C High Power (standard): 2 kcycles; Medium Power, BIP: 5 kcycles

according to IEC 60747-2/6 ch. IVIEC 60747-9:1998

PC (min)

Power Cycling [min] Internal heating and external cooling 2 min. < tcycl. < 6 min; ∆TC= 50K, Tj < Tjmax High Power (standard): 20 kcycles; Medium Power, BIP: 50 kcycles

IEC 60747-2/6 ch. IV EN 153000 3.5.2

PC (sec)

Power Cycling [sec] Internal heating and external cooling 2 < tcycl < 5 sec; Tjmax = 150°C Typical: ∆Tj = 60K,130 kcycles.

IEC 60747-9:1998

RS Resistance to Solder Heat (if applicable)

260 °C ± 5 °C, 10 s ± 1 s wave IEC 60749: 1996

IEC 60068-2-20 Tb: 1979

IEC 60068-2-20 Tb: 1979 EN 150000 4.4.8

S Solderability (if applicable)

235 °C ± 5 °C, aging 3 IEC 60749: 1996

IEC 60068-2-20 Ta: 1979

IEC 60068-2-20 Ta: 1979 EN 150000 4.4.7

V Vibration (optional) In accordance with standard Typical: 5 .. 150 Hz, 20 m/s2, 2h each direction x, y, z

IEC 60749: 1996

IEC 60068-2-6 Fc: 1995

IEC 60068-2-6 Fc: 1970 EN 150000 4.4.6 EN 153000 3.4.2

• EN 150000 replaced CECC 50000:1986 equivalent to DIN 45930 part 1,

EN 150000 4.5.2 with chapter 4.5.2.5 for Diodes, 4.5.2.8 for Thyristors and 4.5.2.10 for IGBTs. • IEC changed identification number for documents in 1997 by adding 60000 to the old number, for example IEC 68 was replaced by IEC 60068.


Power Cycling means stress for the bond wire connections

Si chip

DCBbase plate

Solderjoint

XX

Thermal Cycles of Junction and Heatsink

0102030405060708090

100110120130140150

0 10 20 30 40 50 60

Time [min]

Tem

pera

ture

[°C

] Case TemperatureJunction Temperature


0102030405060708090

100110120130140150

0 10 20 30 40 50 60

Time [min]

Tem

pera

ture

[°C


Power cycling test conditions:

Driving the chip/bond wire system at two different temperatures (∆Tvj between Tvj1 and Tvj2)

Failure criteria is an increase of the saturation voltage by 5%

These 5% are already included in the data sheet values


Power Cycling capability of IHM B modules

1,0E+04

1,0E+05

1,0E+06

1,0E+07

1,0E+08

1,0E+09

1,0E+10

1,0E+11

10 100

Delta Tj in K

n (N

o. o

f Cyc

les)

Tjmax = 150癈

dotted lines: estimated

20 30 40 50 60

Power Cycle curves for E4, P4, T4 module series with new mounting technology

cycle time: 3 secdotted lines: estimated


Thermal Cycling means stress for the soldering connections

Si chip

DCBbase plate

Solderjoint

X X


0102030405060708090

100110120130140150

0 10 20 30 40 50 60

Time [min]

Tem

pera

ture

[°C



0102030405060708090

100110120130140150

0 10 20 30 40 50 60

Time [min]

Tem

pera

ture

[°C


Thermal cycling test conditions:

Driving the case / base plate at two different temperatures (∆Tc between Tc1 and Tc2)

Failure criteria is an increase of the thermal resistance Rth by 20%

These 20% are already included in the data sheet values


Thermal Cycling capability of IHM modules

Thermal Cycling Capability for High Power Modules

1.000

10.000

100.000

1.000.000

10.000.000

30 40 50 60 70 80 90delta Tcase [K]

No.

of c

ycle

s

IHM/IHV Traction (AlSiC)PrimePACK IndustryIHM Standard (Cu)

cycle time: ton+toff typ. 5min

temperature level: Tcase,min=25°C

load conditions: T-rise by internal

active heating T-fall by external cooling

For a overall lifetime estimation the respective dependency N=f(∆Tvj) has also to be taken into account ("Power cycling curve")

dotted lines: estimated

issued 2008-12-12; rev 1


Thermal Shock means stress for the whole module

Thermal shock test conditions:

Driving the whole module at two different temperatures (∆Tst between Tst1 and Tst2)

Two-chamber-test at Tst1=-40°C and Tst2 = 125°C for industryand Tst1 = -55°C and Tst2 = 125°C for special traction modules

Failure criteria is an increase of the saturation voltage by 5% and/or increase of the thermal resistance by 20%

By introduce of ultrasonic welding thermal shock capability isincreased by factor 5


The new IHM B generation offers several advantages for the customer

New IHM B housing is 100% compatible to previous generation

New IGBT4 allows operating temperature up to 150°C

20% higher IRMS are possible by use of Tvj = 150°C

Short circuit capability is given for 150°C

Two optimized versions of IGBT4 are available

Power cycling capability became increased

The quality and mechanical stability is improved

Screen printing for homogeneous applying of thermal grease is available

Green product acc. to RoHs

ihm b modules with igbt4 (1200v and 1700v) · i. ludwisiak ifag imm inp hp copyright © infineon...

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