hot wall furnace
TRANSCRIPT
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Hot-Wall Furnace Heating
Modeling of Semiconductor Process Equipment
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Introduction
• Furnace reactors are used in the semiconductor industry for layer growth and annealing
• The susceptor is heated by a RF coil to high temperatures
• A uniform distribution of the temperature at the wafer region is crucial for controlled and reproducible process steps
• This model investigates the temperature in a hot-wall furnace reactor used for silicon carbide growth
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Model Definition – Geometry
• Symmetry can be used to cut the 3D geometry in half twice
• The graphite susceptor is surrounded by a graphite felt insulation, a quartz tube, and the RF coil
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Model Definition
• This is a multiphysics model, solving an electromagnetic part and one thermal part
• The electromagnetic part solves for the magnetic vector potential, A, at a fixed frequency
• The thermal part solves for temperature, T, and radiation
• The radiation fully controls the thermal flux between the susceptor and the quartz tube
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Results
• The temperature on the quartz tube has a maximum of about 900 K, which may be a bit too high
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Results
• The heating cycle takes about one hour, and with a power of about 10 kW the temperature at the center of the wafer reaches almost 2300 K
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Results
• A surface plot of the wafer reveals the nonuniformity in temperature at the end of the heating cycle, which is almost 150 K