hot-spot: high temperature probing...w15x17 /j750 on uf3000 prober 0 10 20 30 40 50 60 70 80 90 100...
TRANSCRIPT
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June 2009 FEINMETALL GmbH, Dr. W. Schaefer / G. Boehm 1
Hot-Spot: High Temperature ProbingChallenges of wafer probing beyond 150°C
Dr. Wolfgang SchaeferGunther BoehmFeinmetall GmbH
F E I N M E T A L LContact technologies for electronics
June 7-10, 2009San Diego, CA USA
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Demand on High Temperature Probe Cards
- ITRS-Roadmap max. test temperature demand: -55°C +175°C
- automotive industrie requests higher test temperatures: -40°C +180°C
- trend to large footprint multi DUT testing at high temperatures
ITRS
automotive
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Wired Connector
wired card:
PCB
connector
connector plate
head
back stiffener
front stiffener
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2. temperature of electronics1. temperature
distribution
3. dimensionalstability
4. alignment
5. contact performance
Probing Challenges at 180°C wafer temperature
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1. Temperature Measurements within the Probecard
temperature sensor locations:
connector housing
connector platehead
back stiffener
front stiffener
PCB top
PCB bottom
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1. Temperature Measurements within the Probecard
component temperature vs. wafer temperature
-25
0
25
50
75
100
125
150
-40 0 40 80 120
160
200
wafer temperature (°C)
com
pone
nt te
mpe
ratu
re (°
C)
headconnector platefront stiffenerPCB bottomconnector housing back stiffenerPCB top
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1. Temperature Rise within the Probecardprobecard warmup: 180°C wafer temperature
W15x17 /J750 on UF3000 prober
0102030405060708090
100110120130140
0 25 50 75 100 125 150 175 200time (minutes)
com
pone
nt te
mpe
ratu
re (
°C)
connector platePCB-bottomheadfront-stiffenerPCB-topback-stiffenerconnector housing
insert probecard
wafer in contact
end of test
alignment and test
com
pone
nt te
mpe
ratu
re (°
C)
the setup-time can be kept very shortif immediate wafer contact is used
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component temperature vs. wafer temperature
0
25
50
75
100
125
100 120 140 160 180wafer temperature (°C)
com
pone
nt te
mpe
ratu
re (°
C)
PCB bottomPCB top
2. Probecard Electronics Temperature Limit
selection and location of electronic components on the probecard with respect to their max. temperature limit
125°Csemi conductorresistor
max. temp.component type
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3. Dimensional Changes of Wafer and Probecard
dimensional change of probecard material
0 100 200 300 400 500 600
Vespel®
aluminum
PCB
stainless steel
MLC
Al2O3
Si3N4
wafer
position change in µm for given temperature range
from +22°C to +90°Cfrom -40°C to +180°C
50mm distance
Many traditional probecard materials are unsufficient forhigh temperature probing.
Alignment?Cracks?
position change in µm
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3. Needle – Connector Alignment
needle
wire
old styleheat expansion
new designheat expansion
Vespel – ceramicnon symmetric
ceramic – ceramicsymmetricwire
needle
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needle to connector wire alignment accuracyW30x35 head
-50
-40
-30
-20
-10
0
10
20
30
40
50
-50 -40 -30 -20 -10 0 10 20 30 40 50
X-position error in µm
Y-po
sitio
n er
ror i
n µm
old style -40°C
new design -40°C
old style +140°C
new design +185°C
new connector wire
spec. limit
connector wire diameter
3. Needle – Connector Alignment
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probecard scaling35mm footprint, relative to wafer
1
1
1
1
1
1
1
1
-40 +25 +150 +180wafer temperature [°C]
rela
tive
scal
ing
erro
r [µm
]
X scaling errorY scaling error
0
+2
-2
-4
-8
-6
4. Tip Alignment Accuracy at Wide Temperature Range
optimized material selectionfor small scaling error required
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-30
-20
-10
0
10
20
30
-30 -20 -10 0 10 20 30
padsize X [µm]pa
dsiz
e Y
[µm
] +150°Cpadsize
4. Tip Alignment Accuracy at Wide Temperature Range
-30
-20
-10
0
10
20
30
-30 -20 -10 0 10 20 30
padsize X [µm]
pads
ize
Y [µ
m] -40°C
padsize
-30
-20
-10
0
10
20
30
-30 -20 -10 0 10 20 30
padsize X [µm]
pads
ize
Y [µ
m] +25°C
padsize
CTE matchedguide plates
-30
-20
-10
0
10
20
30
-30 -20 -10 0 10 20 30
padsize X [µm]
pads
ize
Y [µ
m] +180°C
padsize
probemarkinspection data
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5. Contact Resistance MeasurementTypical test result from the prober:
100 200 300 400 500
1
2
3
4
5
Cre
s[O
hm]
Touchdown
15.01.2009Contact HT-1@-40°C 500TDs500 needles, 75µm pitch @ -40°C
on AlCu0,5%100 200 300 400 500
5
4
3
2
1
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5. Contact Resistance MeasurementRatio of measurements greater than specified CRes in ppm
1
10
100
1000
10000
100000
1000000
1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.50 4.00 4.50 5.00 6.00 7.00
CRes[]
ppm
ratio of contacts above a specific Cres
data from 250.000 contacts
discontinuing X-scale
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5. Contact Resistance MeasurementRatio of measurements greater than specified CRes in ppm
1
10
100
1000
10000
100000
1000000
1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.50 4.00 4.50 5.00 6.00 7.00
CRes[]
ppm
probecard with 100 needles, 3 Ohm Cres limit, 1% yieldloss
the required performance depends on application:
- required max. Cres
- needles per DUT
probecard with 1000 needles, 3 Ohm Cres limit,
1% yieldloss
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5. Contact Resistance at High Temperature RangeRatio of measurements greater than specified CRes in ppm
1
10
100
1000
10000
100000
1000000
1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.50 4.00 4.50 5.00 6.00 7.00
CRes[]
ppm
-40°C75µm pitchon AlCu0.5no online Cleaning
Ratio of measurements greater than specified CRes in ppm
1
10
100
1000
10000
100000
1000000
1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.50 4.00 4.50 5.00 6.00 7.00
CRes[]
ppm
-40°CRT75µm pitch
on AlCu0.5no online Cleaning
Ratio of measurements greater than specified CRes in ppm
1
10
100
1000
10000
100000
1000000
1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.50 4.00 4.50 5.00 6.00 7.00
CRes[]
ppm
-40°CRT125°C75µm pitchon AlCu0.5
no online Cleaning
Ratio of measurements greater than specified CRes in ppm
1
10
100
1000
10000
100000
1000000
1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.50 4.00 4.50 5.00 6.00 7.00
CRes[]
ppm
-40°CRT125°C150°C
75µm pitchon AlCu0.5no online Cleaning
Ratio of measurements greater than specified CRes in ppm
1
10
100
1000
10000
100000
1000000
1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.50 4.00 4.50 5.00 6.00 7.00
CRes[]
ppm
-40°CRT125°C150°C180°C
75µm pitchon AlCu0.5no online Cleaning
Ratio of measurements greater than specified CRes in ppm
1
10
100
1000
10000
100000
1000000
1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.50 4.00 4.50 5.00 6.00 7.00
CRes[]
ppm
-40°CRT125°C150°C180°CAll
75µm pitchon AlCu0.5no online Cleaning
75µm pitchon AlCu0.5%
no online cleaning
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Cleaning Frequency vs. Wafer Temperature
-40 -20 0 20 40 60 80 100 120 140 160 180
100
200
300
500
1000
>1000
onlin
e cl
eani
ng in
terv
all
wafer temperature in °C
5. Online Cleaning at Elevated Temperatures
each bullet: one test with 500 needles/
500 touchdowns
75µm pitch ViProbeon AlCu0.5%
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5. Contact Resistance MeasurementTypical testresult from the prober: online cleaning not required
100 200 300 400 500
1
2
3
4
5
Cre
s[O
hm]
Touchdown
V42Z @ 180°C, 100µm OTW30x35, 75µm pitch, no online cleaning @ 180°C
500 needleson AlCu0,5%
100 200 300 400 500
5
4
3
2
1
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5. Scrubmarks at Elevated Wafer Temperatures25°C-40°C 125°C 150°C 180°C
Total_Scrub :
Length 20µm 22µm 25µm 29µm 29µm
Width 12µm 14µm 15µm 16µm 16µm(Average, count : 90)
length
width
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scrub size vs. wafer temperature
0
5
10
15
20
25
30
-40 -20 0 20 40 60 80 100 120 140 160 180 200wafer temperature (°C)
size
[µm
]
on AlCu0.5
5. Scrubmarks at Elevated Wafer Temperatures
scrub length
scrub width
on AlCu0.5%
adjusted scrublength for optimized performance
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High Temperature Probing Recommendations
- adjusted scrub length
- adjusted online cleaning
5. contact performance
CTE matched guide plates4. alignment
- CTE matched materials
- design to consider temperature gradients
3. dimensional stability
selection and location of electronic components on the probecard with respect to their max. temperature limit
2. temperature of electronics
adequate warmup setting with the needles in contact with the wafer
1. temperature distribution
solutionchallenge
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Summary
- probing from -40°C to +180°C with one probecard is ready for industrial applications
- space transformer or wired probecardsare both possible
- application specific optimizationcan reduce cleaning frequency
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Thank You.
Feinmetall GmbHHerrenberg, Germanywww.feinmetall.de