Power and productivityfor a better world™

HiPak IGBT modules

ABB Semiconductors’ HiPak modulesare a family of highpower IGBTs inindustry standard housings using thepopular 190 x 140 mm, 130 x 140 mmand 140 x 70 mm footprints.HiPak modules are the perfect matchfor demanding highpower applicationssuch as traction, T & D, renewableenergy (wind, solar) and industrial drives.

harsh conditions. This has been achieved through smoothswitching characteristics – and through rugged operation (highSOA) as this translates into operational safety margins for theequipment.

Furthermore, the SPT+ chipsets (IGBT and diode) at 1700 Vand 3300 V blocking voltages have been improved to operateat higher junction temperatures up to 150 °C in the HiPakmodules .

Table 1 on the next page shows the current HiPak productportfolio. Modules designated “HV” have isolation voltages ofup to 10.2 kVRMS. Standard types have isolation voltages of upto 6 kVRMS, depending on VCES rating.

ABB’s HiPak modules are available in three standard isolationvoltages (4, 6 and 10.2 kVRMS) and a variety of circuit confi-gurations. These modules exclusively use Aluminium SiliconCarbide (AlSiC) base-plate material and Aluminium Nitride (AlN)isolation with low thermal resistance. This specific materialcombination offers an excellent power cycling performancethanks to its matched thermal expansion coefficients (CTE).All HiPak modules feature ABB’s advanced Soft PunchThrough (SPT and SPT+) chip technology, which combineslow-losses with soft-switching performance and record-breaking Safe Operating Area (SOA).

In keeping with ABB’s reputation for offering high powersemiconductors of exceptionally high reliability, the HiPakSPT chips have been optimized for reliable operation under

SPT technologySPT is a well-established planar IGBT technology covering the range of 1200 V to 6500 V. It is characterized by smoothswitching waveforms and exceptional robustness which is of particular importance at higher voltages and currents where strayinductances are not easily minimized.

HiPak product portfolio

1.7 kV

5SND 0800M170100

5SNE 0800M170100

5SNA 1600N170100

5SNA 1800E170100

5SNA 2400E170100

5SNA 2400E170305

5SNA 2000J170300

5SLA 2000J170300

5SNA 3600E170300

5SLA 3600E170300

2.5 kV

5SNA 1500E250300

3.3 kV

5SNG 0250P330305

5SLG 0500P330300

5SND 0500N330300

5SNA 0800N330100

5SNE 0800E330100

5SNA 1000N330300

5SLD 1000N330300

5SLD 1200J330100

5SNA 1200E330100

5SNA 1200G330100

5SNA 1500E330305

4.5 kV

5SNG 0150P450300

5SLG 0600P450300

5SLD 0650J450300

5SNA 0650J450300

5SNA 0800J450300

5SLD 1200J450350

5SNA 1200G450300

5SNA 1200G450350

6.5 kV

5SNA 0400J650100

5SNA 0500J650300

5SLD 0600J650100

5SNA 0600G650100

5SNA 0750G650300

1700

1700

1700

1700

1700

1700

1700

1700

1700

1700

2500

3300

3300

3300

3300

3300

3300

3300

3300

3300

3300

3300

4500

4500

4500

4500

4500

4500

4500

4500

6500

6500

6500

6500

6500

2 x 800

800

1600

1800

2400

2400

2000

2000

3600

3600

1500

2 x 250

2 x 500

2 x 500

800

800

1000

2 x 1000

2 x 1200

1200

1200

1500

2 x 150

2 x 600

2 x 650

650

800

2 x 1200

1200

1200

400

500

2 x 600

600

750

HiPak1

HiPak1

HiPak1

HiPak2

HiPak2

HiPak2

HiPak1 HV

HiPak1 HV

HiPak2

HiPak2

HiPak2

HiPak0 HV

HiPak0 HV

HiPak1

HiPak1

HiPak2

HiPak1

HiPak1

HiPak1 HV

HiPak2

HiPak2 HV

HiPak2

HiPak0 HV

HiPak0 HV

HiPak1 HV

HiPak1 HV

HiPak1 HV

HiPak1 HV

HiPak2 HV

HiPak2 HV

HiPak1 HV

HiPak1 HV

HiPak1 HV

HiPak2 HV

HiPak2 HV

Part number PackageVoltage VCES (V) Current IC (A) Configuration

130 x 140

130 x 140

130 x 140

190 x 140

190 x 140

190 x 140

190 x 140

190 x 140

190 x 140

190 x 140

190 x 140

140 x 70

140 x 70

130 X 160

130 x 140

190 x 140

130 x 140

130 x 140

130 x 140

190 x 140

190 x 140

190 x 140

140 x 70

140 x 70

130 x 140

130 x 140

130 x 140

130 x 140

190 x 140

190 x 140

130 x 140

130 x 140

130 x 140

190 x 140

190 x 140

Footprint

Dual IGBT

Chopper

Single IGBT

Single IGBT

Single IGBT

Single IGBT

Single IGBT

Single Diode

Single IGBT

Single diode

Single IGBT

Half bridge

Diode bridge

Dual IGBT

Single IGBT

Chopper

Single IGBT

Dual diode

Dual diode

Single IGBT

Single IGBT

Single IGBT

Half Bridge

Diode bridge

Dual diode

Single IGBT

Single IGBT

Dual diode

Single IGBT

Single IGBT

Single IGBT

Single IGBT

Dual diode

Single IGBT

Single IGBT

*

*

*

*

*

*#

*

*

*

*

*

*

+

Table 1 * TVJ (operational) up to 150 °C + 10.2 kVRMS Isolation # Contact factory

Voltage Class (V)

0

1.5

VC

E, o

n ( V

)

500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

SPT

SPT+

Fig. 1 Vce(sat) for different IGBT cell technologies on SPT silicon at 125 °C.(current density of SPT range, same Eoff )

SPT+ technologySPT+ retains all the features of the SPT technology butreduces VCE SAT by up to 30 % according to the curve offigure 1 – an achievement previously believed to be possibleonly with trench technology.

Increased reliability with improved HiPak

As of late 2013 an improved HiPak construction has beenrolled out. During Q1 2014 all E, M and N housings will benefitfrom the new design.The improved HiPak modules will be a direct 1:1 replacementwith identical electrical and thermal characteristics. The prin-cipal electro-mechanical layout remains unchanged. Theimprovements are realized by the following design features:

Epoxy-less housing construction:

The case temperature rating will be increased to TC, max = 150°C. The new package now complies with the latest fire andsmoke requirements: NFF 16-101/102 I3 – F2 and CEN TS45545 HL2 cat. R23 required for traction applications.

New internal auxiliary connections:

The internal solder connections between the gate-print and thesubstrate will be substituted by standard aluminium wire bon-ding. This well established technology allows for higher reliabi-lity and offers a redundant double wire connection (figure 4).

Fig. 4 New redundant aluminium wire-bond connection of gate and auxiliary emitter

The buffer and anode designs used in the SPT+ IGBT havebeen optimized in order to obtain a high short-circuit SOAcapability, even at gate voltages exceeding the guaranteedgate drive voltage of 15 V.

High ruggedness at 6500 VIn the case of the new 6500 V SPT+ IGBT the on-state lossesexhibit a reduction of approximately 30 % when compared tothe standard SPT device. This, in combination with the im-proved ruggedness of the SPT+ IGBT has enabled an increasein the current rating from 600 A for the standard 6500 V HiPakup to 750 A for the new SPT+ version.

Figure 2 shows the extremely high turn-off ruggedness of the6500 V SPT+ IGBT setting a new benchmark for this voltageclass. A current of 2400 A – which corresponds to more thanthree times the nominal current – was switched-off against aDC-link voltage of 4500 V at a junction temperature of 125 °C.The stray inductance in this case was 750 nH, which is morethan double the value that can be expected in the targetedapplication environment and shows that the specified SOAcan be fulfilled with margin.

150 °C operationABB recently upgraded the 1700 V and 3300 V SPT+ chipsetsto be operational in HiPak modules at junction temperaturesup to 150 °C. For the IGBT, this is achieved by improveddevice structures combined with new termination designs. Thishas resulted in excellent blocking characteristic and lowreverse currents, which guarantee stable operation at 1700 Vand 3300 V up to temperatures above 150 °C.On the diode side, the plasma has been shaped for lowforward-voltage drop and soft reverse-recovery by using bothlocal and uniform lifetime control. The local lifetime control isobtained by proton (H+) irradiation. The use of hydrogenparticles has reduced the 150 °C leakage current by a factor ofthree when compared with the previous SPT diode platform.

Figure 3 shows the RBSOA test on the 3600 A 1700 V HiPak2module where a current of 10500 A is turned off at a DC-linkvoltage of 1300 V, proving the ruggedness of the SPT+ IGBT-design when paralleled in the HiPak2 module.

Fig. 2 6500 V SPT+ IGBT turn-off under SOA conditions measured atmodule level, Ppoff = 11.7 MW

Fig. 3 3600 A / 1700 V HiPak RBSOA measured at Tj = 150 °C with active clamp

IC = 2400A, VDC = 4500 V, Tj = 125°C, Lσ = 750nH

0.0

3000

2500

2000

1500

1000

500

0

-500

time (μs)

IC

VCE

VGE

7000

6000

5000

4000

3000

2000

1000

0

1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

VC

E ( V

)

I C ( A

) , 10

*VG

E ( V

)

> 3 x Inom

Nominal Current

2 3 4 5 6 7-3000

500

4000

7500

11000

-500

200

900

1600

2300

time (μs)

I C ( A

)

Vce

( V),

Vg

e ( V

) x 1

0

Ic = 10600A, Vdc = 1300 V, Lσ = 50nHRg = 0.60 ,Tj = 150°C,

Vce

VgeIc

PpOff = 15.9 MW

SummaryAs illustrated above, ABB’s HiPak family of IGBT modules con-tinues to set new standards of robustness for high reliabilityapplications. Robustness translates to higher operating safetymargins and allows low gate drive resistance at turn-off which,in turn, allows lower turn-off losses.SPT chip technology with its smooth switching behavior,

allows users the greatest freedom of design by not imposingdv/dt or peak-voltage restrictions at turn-off. The new SPT+

technology allows further loss reductions without compromi-zing any of the existing features of SPT. Further improvementson the cell design allow chipsets to operate at junctiontemperatures up to 150 °C.

5SYA2039

5SYA2098

5SYA2093

5SYA2042

5SYA2043

5SYA2045

5SYA2053

5SYA2058

5SZK9120

5SZK9111

5SZK9112

5SZK9113

Fig. 5 Stich-bond layout and improved bonding parameters boost the powercycling capability

Terminal Foot:The main terminals offer an improved solder foot with specifi-cally designed spacers in order to achieve a homogenoussolder layer thickness. This allows for an improved temperaturecycling performance.

Wire-Bonding:The emitter side wire-bonding parameters have been improvedand so called stich-bonds (figure 5) are used. This results inan improvement of factor 4 in IOL (target 2 Mcycles T = 60 K,Tvj, max = 150 °C).

The new design has been qualified with all the relevant tests:shock and vibration, temperature cycling, IOL and THB.During 2015, the improvements will be made available for thehigh-voltage housings (G, J and P).

Document number

Power and productivityfor a better world™

Table 2 Principal applications documents

Mounting Instructions for HiPak modules

Paralleling of IGBT modules

Thermal design and temperature rating of IGBT modules

Failure Rates of HiPak modules due to cosmic rays

Load-Cycle capability of HiPaks

Thermal runaway during blocking

Applying IGBTs

Surge currents for IGBT diodes

Specification of environmental class for HiPak – OPERATION (Traction)

Specification of environmental class for HiPak – STORAGE

Specification of environmental class for HiPak – TRANSPORTATION

Specification of environmental class for HiPak – OPERATION (Industry)

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ABB Switzerland Ltd.SemiconductorsFabrikstrasse 3CH-5600 LenzburgSwitzerlandTel: +41 58 586 14 19Fax: +41 58 586 13 06abbsem@ch.abb.comwww.abb.com/semiconductors

ABB s.r.o.SemiconductorsNovodvorska 1768/138a142 21 Prague 4Czech RepublicTel: +420 261 306 250Fax: +420 261 306 308semiconductors@cz.abb.comwww.abb.com/semiconductors

DocumentationDevice datasheets are available on ABB’s website www.abb.com/semiconductors. Additional documentation required for thereliable application of HiPak modules is available on the same site. See summary in table 2 below.

/ColorImageDict > /JPEG2000ColorACSImageDict > /JPEG2000ColorImageDict > /AntiAliasGrayImages false /CropGrayImages true /GrayImageMinResolution 300 /GrayImageMinResolutionPolicy /OK /DownsampleGrayImages true /GrayImageDownsampleType /Average /GrayImageResolution 450 /GrayImageDepth -1 /GrayImageMinDownsampleDepth 2 /GrayImageDownsampleThreshold 1.50000 /EncodeGrayImages true /GrayImageFilter /DCTEncode /AutoFilterGrayImages true /GrayImageAutoFilterStrategy /JPEG /GrayACSImageDict > /GrayImageDict > /JPEG2000GrayACSImageDict > /JPEG2000GrayImageDict > /AntiAliasMonoImages false /CropMonoImages true /MonoImageMinResolution 1200 /MonoImageMinResolutionPolicy /OK /DownsampleMonoImages true /MonoImageDownsampleType /Average /MonoImageResolution 1800 /MonoImageDepth -1 /MonoImageDownsampleThreshold 1.50000 /EncodeMonoImages true /MonoImageFilter /CCITTFaxEncode /MonoImageDict > /AllowPSXObjects false /CheckCompliance [ /None ] /PDFX1aCheck false /PDFX3Check false /PDFXCompliantPDFOnly false /PDFXNoTrimBoxError true /PDFXTrimBoxToMediaBoxOffset [ 0.00000 0.00000 0.00000 0.00000 ] /PDFXSetBleedBoxToMediaBox true /PDFXBleedBoxToTrimBoxOffset [ 0.00000 0.00000 0.00000 0.00000 ] /PDFXOutputIntentProfile (None) /PDFXOutputConditionIdentifier () /PDFXOutputCondition () /PDFXRegistryName () /PDFXTrapped /False

/CreateJDFFile false /Description > /Namespace [ (Adobe) (Common) (1.0) ] /OtherNamespaces [ > /FormElements false /GenerateStructure false /IncludeBookmarks false /IncludeHyperlinks false /IncludeInteractive false /IncludeLayers false /IncludeProfiles false /MultimediaHandling /UseObjectSettings /Namespace [ (Adobe) (CreativeSuite) (2.0) ] /PDFXOutputIntentProfileSelector /DocumentCMYK /PreserveEditing true /UntaggedCMYKHandling /LeaveUntagged /UntaggedRGBHandling /UseDocumentProfile /UseDocumentBleed false >> ]>> setdistillerparams> setpagedevice