highlights on some experimental progress of fese xingjiang zhou 2014/10/08
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Highlights on Some Experimental Progress of FeSe
Xingjiang ZHOU
2014/10/08
S. Medvedev et al., Nat. Mater. 8 (2009) 630.
N. Katayama et al.,J. Phys. Soc. Jpn. 79 (2010)113702.
F.-C. Hsu et al., PNAS 105 (2008) 14262;
Bulk FeSe Superconductor
Simple crystal structure; In FeSe, Tc can be enhanced from 8.5K to 36.7K at high
pressure;
In Fe(SexTe1-x), Tc can reach 14.5K.
FeSe Films Grown on Graphene
Single-layer FeSe/Graphene is non superconducting above 2.2K; Tc increases with the number of layers in FeSe/Graphene films, reaching 8K for 8 layers with a superconducting gap of 2.1 meV; V-shaped STS curve in the superconducting state indicating a node in the gap function.
C. L. Song et al., Phys. Rev. B 84 (2011) 020503(R).
C. L. Song et al., Science 332 (2011) 1410.
8-Layer 2-Layer ~30-Layer
FeSe Films Grown on SrTiO3 (001)
Single-layer FeSe/SrTiO3 film shows a STS peak at ~20 meV, corresponding to an estimated Tc~80 K if it is superconducting;
Double-layer FeSe/SrTiO3 film is semiconducting.
20.1meV
9.5meV
Single-layer,Tc ~ 80 K? Double-layer, semiconducting
Q. Y. Wang et al., Chinese Phys. Lett. 29 (2012) 037402.
Distinct Electronic Structure of Superconducting FeSe/SrTiO3 Films
Cut 1 Cut 2
D. F. Liu et al., Nature Communications 3 (2012) 931.
Distinct electronic structure: no Fermi surface near G, only electron-like Fermi surface near M.
Phase Diagram and Indication of Tc~65Kin Single-Layer FeSe/SrTiO3 Film
2 /D kTc=6~7
S. L. He et al., Nature Materials 12, 605
(2013).
Tc~65 K
There are two phases present in single-layer FeSe/SrTiO3 film with different electronic structure (N phase and S phase); By annealing in vacuum, N phase can transform into S phase;
Indication of Tc~65 K observed.
S. Y. Tan et al., Nature Materials 12, 634 (2013).
Layer-Dependent Electronic Structure in FeSe/SrTiO3 Films
For two-layer or multiple layer FeSe/SrTiO3 films, it is reported that SDW state is formed; The SDW temperature decreases with increasing number of FeSe layers.
Substrate Strain-Dependent Electronic Structure and Superconductivity of Single-layer FeSe Film
FeSeBR: SL-FeSe/Nb:BaTiO3/KTaO3 heterostructures, relaxed;
a=3.76 A
FeSeBU: SL-FeSe/Nb:BaTiO3/KTaO3 heterostructures, unrelaxed;
a=3.99 A
FeSeSX: SL FeSe/Nb:SrTiO3/KTaO3 heterostructures;
a=3.99 A
FeSeS: FeSe/Nb:SrTiO3 ;
a=3.906 AR. Peng et al., Nature Communications 5 (2014) 5044.
The lattice constant changes from 3.76 A to 3.99 A, Tc shows little change near (70+_5)K;The superconductivity is not sensitive to strain of the substrate.
J. J. Lee et al., arXiv: 1312.2633.
Replica Bands and Electron-Phonon Coupling in Single-layer FeSe/SrTiO3 Film
Replica bands are observed with a separation of ~100 meV; It is proposed this is due to electron coupling with STO phonon.
Transport and Magnetic Measurements on Single-Layer FeSe/SrTiO3 Films
W. H. Zhanget al., Chinese Physics Letters 31 (2014) 017401.
Resistivity Magnetism
Both transport and magnetic measurements indicate single-layerFeSe/SrTiO3 is superconducting although the Tc is not as high asthat from ARPES.
arXiv: 1406.3435.
Schematic of 4 point probe (4PP ) transport measurement setup.
J. F. Ge et al., arXiv: 1406.3435.
11T3K
Temperature and external magnetic field dependence of electrical transport property of a single-layer film of FeSe
J. F. Ge et al., arXiv: 1406.3435.
4PP transport measurement on Bi2212 crystal (Tc~90K) with measurement configurations of C1423 (a) and C1234 (b), respectively.
J. F. Ge et al., arXiv: 1406.3435.
Temperature dependence of electrical transport property of another FeSe/STO sample measured with the 100-μm-tip-separation 4PP fixed at one measuring location while temperature was increasing.
J. F. Ge et al., arXiv: 1406.3435.