high temperature oxygen out-diffusion from the interfacial siox … · 2009. 3. 10. · silicon...
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![Page 1: High Temperature Oxygen Out-Diffusion from the Interfacial SiOx … · 2009. 3. 10. · Silicon Genesis™ Corporation • 61 Daggett Drive, San Jose CA 95134 • High Temperature](https://reader034.vdocuments.us/reader034/viewer/2022051910/60002f2a9ff955379973e649/html5/thumbnails/1.jpg)
Silicon Genesis™ Corporation • 61 Daggett Drive, San Jose CA 95134 • www.sigen.com
High Temperature Oxygen Out-Diffusion from the Interfacial SiOx Bond Layer in Direct Silicon Bonded (DSB) Substrates
Jim Sullivan, Harry R. Kirk, Sien Kang, Philip J. Ong, and Francois J. Henley
IEEE 2006 International SOI Conference
Niagara Falls, New York2 – 5 October, 2006
Silicon Genesis CorporationSan Jose, California USA
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Outline
• Motivation for DSB• Adapting an SOI Process for DSB
• Fundamental Issues & Challenges• Plasma Bond Process Modifications• SiOx Metrology Considerations • Bond Interface Oxygen Dissolution
• Relevant Prior Work• Theoretical Model• Results• Special Process Considerations
• Cost-Effective Commercialization • Conclusions
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Motivation – Better CMOS Mobility
Welser, IEEE SVC EDS Seminar June 2005
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Hybrid Orientation - Why It Works
Welser, IEEE SVC EDS Seminar June 2005
• Independently optimizes PMOS and NMOS Mobility• Compatible with strain enhancement approaches• DSB is a bulk-like, electrically connected version
Bond
(100)
(110) Film
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Major DSB Benefit – Bulk-Like!
Sung & al., IEDM 2005, Ref. #3 & Saenger & al, APL 87, 221911, 2005
TEMCMOS Structure
• Compatible with CMOS processes and strain enhancement approaches• Amorphization & SPE processes to express selective orientation
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Adapting an SOI Process For DSB
1. Hydrophyllic Bonding• Positive Points
• Used in SOI in production• Highly engineered void-free bonding • Equipment and bond processes available
• Negative Points• Generates a bond interfacial oxide• Electrically insulating interface
2. Hydrophobic Bonding• Positive Points
• No Interface oxide• Negative Points
• Void-free bonding is difficult• No production low-temperature bond experience• Production equipment and processes unavailable
Two Major Paths to Consider
Can we eliminate the oxide?
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0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
PA Time (sec)
Plasma Activation (PA) for DSB – SiOx Control
• Low temperature cleaving possible• Void-Free Production Bonding• Control of SiOx at interface
SiGen plasma-activation chamber (open chamber in background) integrated into an EV850 bond tool PA Process Time
Target Over PA
Abs
orbe
d O
xyge
n a.
u.
Under PA
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SiOx Metrology Considerations
• SiOx elimination requires good metrology• SiOx stochiometry used TEM and SIMS
• First measurements gave x=4 !• SIMS technique had to be refined:
• Detected CsO+ secondary ions with Cs+ primary beam)• This approach minimize the typical matrix effects in SIMS
analysis and allows accurate quantification in presence of interfaces
• SiGen/CEA successfully developed an effective characterization method based on “Calibrated SIMS”
• Method Development:• Measured samples with TEMs and SIMS Cs+• Generated an effective correlation of total oxygen
dose versus TEM thickness• Dissolution results in good agreement with
absolute oxygen numbers
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SiOx Metrology Considerations
TEM thickness (nm) = 2E-15 Areal density (at/cm2) + 1.2552R2 = 0.9998
0
1
2
3
4
5
6
0.00E+00 5.00E+14 1.00E+15 1.50E+15 2.00E+15 2.50E+15
O2 area (at/cm2)
TEM
thic
knes
s (n
m)
• A linear relationship between TEM thickness and SIMS oxygen content was found
=> Quantification was accurate
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Cross-section TEM (As-Cleaved DSB)
Interfacial layer = ~30Å-60ÅBonded Si-Si Interface
Cleaved Film
Pre-Dissolution
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Bond Interface Oxygen Dissolution
• Fundamental Approach• Use a high-temperature anneal to dissolve
oxygen through the upper interface
• Production worthy? Defect Generating?
• Relevant Prior Work • Ahn & al, Appl. Phys. A 50, 85-94 (1990)
• Used bonded wafers with thin oxide interface
• No layer-transfer, “infinite” silicon thickness on each side
• FZ, CZ substrates studied• FZ: Dissolution possible• CZ: Net oxide growth occurs
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Post-Cleave Treatment Anneal for elimination of SiOx interface layer
High-T anneal after surface treatment in inert or reducing atmosphere(ex. Argon, Hydrogen )Allows Oxygen to diffuse and escape from surfaceRequires clean surface & free from getter sitesSingle-crystal silicon grows by solid-phase epitaxy to close the interface as the oxygen and other interfacial elements are diffused out
SiliconSubstrate
Argon/H Ambient(~1200 C)
Argon/H Ambient(~1200 C)
SiliconSubstrate
Epitaxial Regrowth
Bond Interface Oxygen Dissolution
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SiliconSubstrate
Argon/H Ambient(~1200 C)
PositionO-C
once
ntra
tion
(arb
. Uni
ts)
Diffusion Process
Epitaxial Regrowth
Bond Interface Oxygen Dissolution
Argon/H Ambient(~1200 C)
PositionO-C
once
ntra
tion
(arb
. Uni
ts)
Diffusion Process
SiliconSubstrate
Time
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Theoretical Model
)()0()/(
filmtCsDdxdCDFlux −≈−=
2
2
sec)/53.2exp(14.0 cmkTeVD −=
3)/57.1exp(221.9 −−= cmkTeVECs
CsOxygenFlux
Upper Film Thickness
Fick’s Law
O-C
once
ntra
tion
Bond Interface
Surface
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Diffusion Calculation (Example)
• Parameters Silicon Layer thickness (tSi): 200 nmArgon Ambient, 1200 °C treatment50 Å interface layer, SiO0.5 stochiometry
• Diffusion Law (oxygen in silicon)
Flux (atoms/cm2 – sec) = Do(T) * [ (CS(T) – 0)/ tSi]
• At 1200 C, CS(T) ~ 4.6 E+17 cm-3, Do(T) ~ 3.15 E-10 cm2/secFlux = 7.24 E+12 O-atoms/cm2-sec
• Total O-Dose = [4.4 E+22 cm-3 /4] * 5nm = 5.5 E+15 atoms/cm2
Time = Total O-dose/Flux = 5.5 E+15 atoms/cm2 / 7.24 E+12 O-atoms/cm2-sec
Time to dissolution = 760 seconds
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1190 ºC(H-Ambient)
55Å
40% dissolved
StartingOxide
Thickness
Oxide Dissolution Kinetics – Experimental Verification
100% dissolved
70% dissolved
0% dissolved
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<100>/<110>
<100
><1
10>top
substrate
<100>
<110>
<110>
<110>
(110) Silicon DSB on (100) Silicon Test Sample
Notch
TEM
Ele
ctro
n P
aths
XTEMs<110>/<110>
top
substrate <100
><1
10>
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Edge Top and Bottom Diffraction
<110>
<110>
<110>
<100>
Local Area Diffraction Patterns(110) donor
(100) handle
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TEM: Pre/Post H-Anneal Tests
<110> direction (across and along view)
view direction
<110> Reciprocal
<100> Reciprocal
Interfacial Layer Reduced to 1-2 monolayers
Surface AFM (2um x 2um)1.43 Å RMS, 9 Å Range
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Oxide free hybrid interface
<110>
<100>
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SIMS – SiOx Layer Dissolution Confirmed
As-Cleaved Post Anneal
No Oxygen Remaining
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Special Process Considerations
• Solid phase epitaxial re-growth of crystalline silicon during out-diffusion
• Avoidance of oxygen clustering (Ref # 6)• Metrology of oxygen in SiOx• Choice of Handle Material
• Little difference between CZ & FZ • Surface oxide and ambient
No Surface Oxides!
SurfaceOxide
Anneal ambient must be oxygen free …..trace amounts will prevent oxygen out-diffusion
No Dissolution X
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Cost-Effective Commercialization
• High Throughput OptionsSelect thinner upper silicon thickness speed out-diffusion Re-grow silicon to desired thickness epitaxially
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Conclusions
• Plasma-activated bond and cleave effective at controlling defects and interfacial oxide for as-cleaved DSB materials
• Oxygen out-diffusion may be employed to reduce the interfacial oxide to zero or desired target levels
DSB can be commercialized cost-effectively using a SOI layer-transfer process variant for next-generation CMOS process nodes