high power resistive products - avx corporation

High Power Resistive Products

111521-1

IMPORTANT INFORMATION/DISCLAIMER

All product specifications, statements, information and data (collectively, the “Information”) in this datasheet or made available on the website are subject to change. The customer is responsible for checking and verifying the extent to which the Information contained in this publication is applicable to an order at the time the order is placed. All Information given herein is believed to be accurate and reliable, but it is presented without guarantee, warranty, or responsibility of any kind, expressed or implied.

Statements of suitability for certain applications are based on KYOCERA AVX’s knowledge of typical operating conditions for such applications, but are not intended to constitute and KYOCERA AVX specifically disclaims any warranty concerning suitability for a specific customer application or use.

ANY USE OF PRODUCT OUTSIDE OF SPECIFICATIONS OR ANY STORAGE OR INSTALLATION INCONSISTENT WITH PRODUCT GUIDANCE VOIDS ANY WARRANTY.

The Information is intended for use only by customers who have the requisite experience and capability to determine the correct products for their application. Any technical advice inferred from this Information or otherwise provided by KYOCERA AVX with reference to the use of KYOCERA AVX’s products is given without regard, and KYOCERA AVX assumes no obligation or liability for the advice given or results obtained.

Although KYOCERA AVX designs and manufactures its products to the most stringent quality and safety standards, given the current state of the art, isolated component failures may still occur. Accordingly, customer applications which require a high degree of reliability or safety should employ suitable designs or other safeguards (such as installation of protective circuitry or redundancies) in order to ensure that the failure of an electrical component does not result in a risk of personal injury or property damage.

Unless specifically agreed to in writing, KYOCERA AVX has not tested or certified its products, services or deliverables for use in high risk applications including medical life support, medical device, direct physical patient contact, water treatment, nuclear facilities, weapon systems, mass and air transportation control, flammable environments, or any other potentially life critical uses. Customer understands and agrees that KYOCERA AVX makes no assurances that the products, services or deliverables are suitable for any high-risk uses. Under no circumstances does KYOCERA AVX warrant or guarantee suitability for any customer design or manufacturing process.

Although all product–related warnings, cautions and notes must be observed, the customer should not assume that all safety measures are indicted or that other measures may not be required.

121319

– high power resistive products –

The Important Information/Disclaimer is incorporated in the catalog where these specifications came from or available online at www.avx.com/disclaimer/ by reference and should be reviewed in full before placing any order.

http://www.avx.com/disclaimer/

High Power Resistive ProductsTable of Contents

FA1 STYLE .............................................................................................................................................................................................................................................. 1

RESISTORS ............................................................................................................................................................................................................................................ 5

FLANGE MOUNT TERMINATIONS ..............................................................................................................................................................................................12

JUMPERS .............................................................................................................................................................................................................................................. 34

RESISTIVE PRODUCTS DESIGN KITS ....................................................................................................................................................................................... 35

RESISTIVE PRODUCTS TAPE AND REEL SPECIFICATIONS............................................................................................................................................ 36

RESISTORS AND TERMINATIONS: MOUNTING AND ATTACHMENT RECOMMENDATIONS ........................................................................... 37

RESISTORS AND TERMINATIONS: ENGINEERING GUIDELINES .................................................................................................................................. 41




1012219

High Power Resistive ProductsFA1 Style

GENERAL INFORMATION• Frequency Range: DC to 3 GHz• Input Power*: 150 Watts• Operating Temp Range: -55 to +150°C• Attenuation Stability**: 0.0001 dB/dB/°C, Max.• Mounting Flange: Copper, Pd over Ni; other platings available• Resistive Elements: Tantalum Nitride• Substrate Material: Aluminum Nitride• Tabs: 99.99% Pure Silver, .004 inches thick, Cover: Alumina• RoHS Compliant• Reliability: MIL-PRF-55342

Case StyleCase SizeTermination*G ±2% available - Consult Factory

Value

N 0100 JFA1 0300 BK

PackagingBK = Plastic Carrier

ToleranceCode JTol. ±5%

.040 TYP.(1.02 mm)

.375 (9.53 mm)

.975 (24.77 mm) .725 MIN. (18.4 mm)

.400 (10.16 mm)

.125 (3.18 mm)

.170 (4.32 mm)

.188 (4.76 mm)

.125 THRU (3.18 mm)

.004 (.101 mm)

.290 TYP.(7.36 mm)

.125 (3.18 mm)

.225 MAX.(5.76 mm)

.250 TYP.(6.35 mm)

.305 ± .005 (7.75 mm ±.127 mm)

.670 (17.02 mm)

Part Number Nominal Attenuation (dB)

Frequency Sensitivity (dB, max.)

Maximum Deviation from Nominal (dB)

VSWR (max.)

FA10975P01DBFBK 1 ± 0.25 +0.45 / -0.15 1.55:1FA10975P02DBFBK 2 ±0.30 +0.50 / -0.30 1.50:1FA10975P03DBFBK 3 ± 0.30 +0.60 / -0.30 1.50:1FA10975P06DBFBK 6 ± 0.45 +0.80 / -0.20 1.40:1FA10975P09DBFBK 9 ± 0.35 +0.70 / -0.20 1.30:1FA10975P10DBFBK 10 ± 0.20 +0.40 / -0.30 1.40:1FA10975P17DBFBK 17 ± 1.00 +1.00 / -1.20 1.30:1FA10975P20DBFBK 20 ± 1.00 +1.00 / -1.20 1.30:1FA10975P30DBFBK 30 ± 1.05 +1.75 / -1.20 1.25:1




2031521

350

300

250

200

150

100

50

00 25 50 75 100 125 150

Attenuator Power Handling vs. Mounting Surface Temperature

Notes:1. Plot refers to incident continuous power of “P” Watts2. Mounting surface is assumed an isotherm at TM °C3. Actual testing done at P = 100 Watts, TM = 100 °C4. Plot based on 1-dimensional heat transfer formula: T = TM + PR, where T = area-average resistive �lm temperature, held to 150 °C, max. R = thermal resistance, mounting surface to resistive �lm ≈ 0.5 °C/W for 30- and 20- dB devices (other values will run cooler and therefore handle more power – consult factory)

Pow

er H

andl

ing

(Wat

ts)

Mounting Surface Temperature (°C)

High Power Resistive ProductsFA1 Style




3

High Power Resistive ProductsLeaded Chip Attenuators – LA1 Style

GENERAL SPECIFICATIONS• Frequency Range: DC to 3 GHz• Input Power*: 150 Watts• Operating Temp Range: -55ºC to +150ºC • Attenuation Stability**: 0.0001 dB/dB/ºC, • Max. Resistive Elements: Tantalum Nitride • Substrate Material: Aluminum Nitride• Tabs: 99.99% Pure Silver, 0.10 (0.004) thick • Cover: Alumina• RoHS Compliant

1.02 TYP.(0.040)

9.53(0.375)

10.16(0.400)

6.35 TYP.(0.250)

2.03 MAX.(0.800)

1.02 (0.040)

0.10 (0.004)

Mechanical Tolerance: ±0.25 (0.010) unless otherwise specified

Part Number Nominal Attenuation (dB)

Frequency Sensitivity (dB, max.)

Maximum Deviation from Nominal (dB)

VSWR (max.)

LA13740P01DBFBK 1 ± 0.20 +0.45 / -0.15 1.55LA13740P02DBFBK 2 ± 0.30 0.50 / -0.30 1.50LA13740P03DBFBK 3 ± 0.30 0.60 / -0.30 1.50LA13740P06DBFBK 6 ± 0.30 +0.60 / -0.20 1.30LA13740P09DBFBK 9 ± 0.30 +0.60 / -0.20 1.30LA13740P10DBFBK 10 ± 0.20 +0.40 / -0.30 1.25LA13740P17DBFBK 17 ± 1.00 +1.00 / -1.20 1.30LA13740P20DBFBK 20 ± 1.00 +1.00 / -1.20 1.25LA13740P30DBFBK 30 ± 1.05 +1.75 / -1.20 1.25

031521

HOW TO ORDER

Case StyleCase SizeTerminationValue

P 02DB FLA1 3740 BK


ToleranceCode FTol. ±1%




4

High Power Resistive ProductsLeaded Chip Attenuators – LA1 Style

350

300

250

200

150

100

50

00 25 50 75 100 125 150

Attenuator Power Handling vs. Mounting Surface Temperature

Notes:1. Plot refers to incident continuous power of “P” Watts2. Mounting surface is assumed an isotherm at TM °C3. Actual testing done at P = 100 Watts, TM = 100 °C4. Plot based on 1-dimensional heat transfer formula: T = TM + PR, where T = area-average resistive �lm temperature, held to 150 °C, max. R = thermal resistance, mounting surface to resistive �lm ≈ 0.5 °C/W for 30- and 20- dB devices (other values will run cooler and therefore handle more power – consult factory)

Pow

er H

andl

ing

(Wat

ts)

Mounting Surface Temperature (°C)

031521




5

High Power Resistive ProductsResistors

KYOCERA AVX introduces its line of High Power Resistive Products. All products are designed and manufactured at our ISO 9001 Facilities.

ELECTRICAL SPECIFICATIONS• Resistance: 50 and 100 Ω standard (10 Ω - 200 Ω available)• Resistance Tolerance: ±5% standard (±2% available)• Power: 4 Watts through 250 Watts• Operating Temperature Range: -55˚C - +150˚C• Temperature Coefficient: < 150 ppm/˚C• Low Capacitance

MECHANICAL SPECIFICATIONS• Package: Surface Mount Chips, Chips, Leaded Chips, Flanged• Substrate Material: Aluminum Nitride• Process: Thin Film• Resistive Material: Tantalum• Terminals: Silver• Cover: Alumina• Mounting Flange: 100% Cu, Ni or Ag Plated• Mechanical Tolerance: ±.005• SMT and Chip products, supplied on Tape and Reel• Non-Magnetic

(exception CS and CW Style Surface Mount Resistors)• Lead-Free, RoHS Compliant

HOW TO ORDER

111521


N 0100 JFR1 0300 BK



*G ±2% available - Consult Factory

POWER DERATING

0

20

40

60

80

100%

+25˚C-25˚C 0˚C-50˚C 150˚C125˚C100˚C75˚C+50˚C

Heat Sink Temperature (°C)

Po

wer

Dis

sip

atio

n

Rated Safe Operating Range




6

P/N: FR10300NXXXXJELECTRICAL SPECIFICATIONS

• Resistance: 100 Ω standard (other Ω values available)• Resistive Tolerance: ±5% standard (±2% available)• Power: 20 Watts• Capacitance: 1.0 pF• Operating Temperature Range: -55˚C to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant• Non-Magnetic available


• Resistance: 100 Ω standard (other Ω values available)• Resistive Tolerance: ±5% standard (±2% available)• Power: 20 Watts• Capacitance: 1.0pF• Operating Temperature Range: -55 to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant• Non-Magnetic available

6.35 (0.250) TYP.3.18 THRU(0.125)

1.02 TYP.(0.040)

0.76 TYP.(0.030)

2.59 TYP.(0.102)

0.10 (0.004)

3.81 MAX.(0.150)

5.08 (0.200)

7.62(0.300)

5.08 (0.200)

2.54 (0.100)

1.57 (0.062)

2.54 (0.100)

mm (inches)

2.59 (0.102)

1.57 (0.062)

7.62(0.300)

6.35 TYP.(0.250)

3.18 TYP.(0.125)

2.54 (0.100)

2.54 (0.100)

0.635 TYP.(0.025)

2.54 (0.100)

4.95 MIN.(0.195)

3.81 MAX.(0.150)

0.10 (0.004)

mm (inches)

High Power Resistive ProductsFlange Mount Resistors

031221




7


• Resistance: 100 Ω standard (other Ω values available)• Resistive Tolerance: ±5% standard (±2% available)• Power: 25 Watts • Capacitance: 1.0pF• Operating Temperature Range: -55 to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant• Non-Magnetic available


• Resistance: 100 Ω standard (other Ω values available)• Resistive Tolerance: ±5% standard (±2% available)• Power: 60 Watts • Capacitance: 2.0 pF• Operating Temperature Range: -55˚C to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant• Non-Magnetic available

12.70 (0.500)

5.08(0.200)

1.02 TYP.(0.040)

1.57 (0.062)

2.54 (0.100)

3.18 THRU(0.125)

2.59 (0.102)

2.54 (0.100)

0.76 TYP.(0.030)

5.08 MIN.(0.200)

6.35 TYP. (0.250)

3.81 MAX.(0.150)

010 (0.004)

3.18 THRU(0.125)

1.02 (0.040)

0.10 (0.004)

6.35 (0.250)

13.1 (0.515)6.35 MIN.(0.250)

3.18 (0.125)

3.18 (0.125)

1.57 (0.062)

6.35 TYP.(0.250)

2.59 TYP.(0.102)

3.81 MAX.(0.150)

mm (inches)

mm (inches)


031221




8


• Resistance: 100 Ω standard (other Ω values available)• Resistive Tolerance: :±5% standard (±2% available)• Power: 60 Watts • Capacitance: 2.2 pF• Operating Temperature Range: -55 to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant• Non-Magnetic available



6.35 (.250)

6.35 (0.250)

3.18 MIN. TYP.(0.125)

3.18 (0.125)

6.73(0.265)

13.08(0.515)

0.10 (0.004)

1.57 (0.062)

2.59 (0.102)

6.35 TYP.(0.250)

0.64 TYP.(0.025)

3.81 MAX.(0.150)

2.41 (0.095)

14.22 (0.560)

7.87(0.310)

0.10 (0.004)2.59 (0.102)

1.57 (0.062)

4.78 (0.188)

3.96 THRU(0.156)

3.94 (0.155)

9.52(0.375)

3.81 MAX.(0.150)

1.02 (0.040)

6.35 TYP.(0.250)

mm (inches)

mm (inches)


031221




9


• Resistance: 100 Ω standard (other Ω values available)• Resistive Tolerance: ±5% standard (±2%available)• Power: 75 Watts • Capacitance: 4.15 pF• Operating Temperature Range: -55 to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant• Non-Magnetic available



3.96 THRU(0.156)

7.87(0.310)

3.94 (0.155)

4.78 (0.188)

14.22(0.560)

6.35(0.250)

1.57 (0.062)

0.10 (0.004)2.59 (0.102)

9.52 (0.375)

6.35 TYP.(0.250)

1.02 TYP.(0.040)

3.81 MAX.(0.150)

3.18 THRU(0.125)

0.10 (0.004)2.59 (0.102)

2.92 (0.115)

20.3 (0.800)

14.2 (0.560)

8.89 (0.350)

5.84 (0.230)

1.57 (0.062)

1.02 TYP.(0.040)

3.81 MAX.(0.150)

2.92 (0.115) 6.35 TYP. (0.250)

mm (inches)

mm (inches)


031221




10031221



• Resistance: 100 Ω standard (other Ω values available)• Resistive Tolerance: ±5% standard (±2% available)• Power: 150 Watts• Capacitance: 4.15 pF• Operating Temperature Range: -55˚C to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant• Non-Magnetic available

P/N: FR10870NXXXXJ01ELECTRICAL SPECIFICATIONS


.062 (1.57 mm)

.560 (14.2 mm)

.188 (4.77 mm)

.156 THRU (3.96 mm)

.250 (6.35 mm)

.870 (22.1 mm)

.102 (2.59 mm)

.004 (.101 mm) .040 TYP.

(1.02 mm).

.150 MAX. (3.81 mm)

.375 (9.53 mm)

.250 TYP. (6.35 mm).188 (4.77 mm)

.062 (1.57 mm)

.560 (14.2 mm)

.188 (4.77 mm)

.156 THRU (3.96 mm)

.375 (9.53 mm)

.250 (6.35 mm)

.870 (22.1 mm)

.102 (2.59 mm)

.004 (.101 mm) .120 TYP.

(3.06 mm)

.250 TYP. (6.35 mm)

.150 MAX. (3.81 mm)

.188 (4.77 mm)

mm (inches)

mm (inches)




11


031221



P/N: FR10975N0100J01ELECTRICAL SPECIFICATIONS


.120 TYP.(3.06 mm)

.385 (9.779 mm)

.975 (24.77 mm) .725 MIN.( 18.4 mm)

.375 ( 9.53 mm)

.125 (3.18 mm)

.170 (4.32 mm)

.188 (4.76 mm)

.125 THRU (3.18 mm)

.004 (.101 mm)

.300 (7.62 mm)

.125 (3.18 mm)

.225 MAX. (5.715 mm)

.250 TYP.(6.35 mm)

.040 TYP.(1.02 mm)

.975 (24.77 mm) .725 MIN.( 18.4 mm)

.375 (9.53 mm)

.125 (3.18 mm)

.170 (4.32 mm)

.188 (4.76 mm)

.125 THRU (3.18 mm)

.004 (.101 mm)

.300 (7.62 mm)

.125 (3.18 mm)

.225 MAX. (5.715 mm)

.250 TYP.(6.35 mm)

.385 (9.779 mm)

mm (inches)

mm (inches)




12

KYOCERA AVX introduces its complete line of High Power Termination Products. All Products are designed and manufactured at our ISO 9001 Facilities.

ELECTRICAL SPECIFICATIONS• Resistance: 50 Ω standard (10 Ω - 200 Ω available)• Resistance Tolerance: ±5% standard (±2% available)• Power: 10 Watts through 250 Watts• Operating Temperature Range: -55ºC to +150ºC• Temperature Coefficient: < 150 ppm/ºC• Low VSWR

MECHANICAL SPECIFICATIONS• Package: Surface Mount Chips, Chips, Leaded Chips, Flange Mount• Substrate Material: Aluminum Nitride• Process: Thin Film• Resistive Material: Tantalum• Terminals: Silver• Cover: Alumina• Mounting Flange: 100% Cu, Ni or Ag Plated• Mechanical Tolerance: ±0.13 (0.005)• Lead-Free, RoHS Compliant• SMT and Chip products, supplied on Tape and Reel

HOW TO ORDER

0

20

40

60

80

100%

+25˚C-25˚C 0˚C-50˚C 150˚C125˚C100˚C75˚C+50˚C


Po

wer

Dis

sip

atio

n


POWER DERATING

High Power Resistive ProductsFlange Mount Terminations

031121

Case StyleCase SizeTermination*G ±2% available - Consult Factory

Value

N 0050 JFT1 0300 BK






13


P/N: FT10300N0050JELECTRICAL SPECIFICATIONS

• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 20 Watts• Frequency: DC to 6 GHz• VSWR: 1.15:1 @ 4 GHz, 1.25:1 @ 6 GHz,• Operating Temperature Range: -55ºC to +150ºC• Temperature Coefficient: <150 ppm/ºC• Tabs: Silver• Lead-Free, RoHS Compliant

0.76 (0.030)

7.62 (0.300)

3.18 THRU(0.125)

1.02 (0.040)

2.54 (0.100)

5.08 (0.200)

2.54 (0.100)

5.08 (0.200)

6.35 TYP.(0.250)

2.59 (0.102)

0.10 (0.004)

1.57 (0.062)

3.81 MAX.(0.150)

mm (inches)


• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 20 Watts• Frequency: DC to 6 GHz• VSWR: 1.15:1 @ 4 GHz, 1.25:1 @ 6 GHz,• Operating Temperature Range: -55ºC to +150ºC• Temperature Coefficient: <150 ppm/ºC• Tabs: Silver• Lead-Free, RoHS Compliant

3.18 THRU(0.125)

1.02 (0.040)

0.76 (0.030)2.59 (0.102)

0.10 (0.004)

5.08 (0.200)

7.62 (0.300)5.08 (0.200)

2.54 (0.100)

2.54 (0.100)

1.57 (0.062)

6.35 TYP.(0.250)

3.81 MAX.(0.150)

mm (inches)

031121




14


• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 20 Watts• Frequency: DC to 18 GHz• VSWR: 1.15:1 @ 15 GHz, 1.25:1 @ 18 GHz• Operating Temperature Range: -55ºC to +150ºC• Temperature Coefficient: <150 ppm/ºC• Tabs: Silver• Lead-Free, RoHS Compliant


• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 25 Watts• Frequency: DC to 6.0 GHz• VSWR: 1.15:1 @ 4 GHz, 1.25:1 @ 6 GHz• Operating Temperature Range: -55ºC to +150ºC• Temperature Coefficient: <150 ppm/ºC• Tabs: Silver• Lead-Free, RoHS Compliant

2.54 (0.100)

5.08 MIN.(0.200)

7.62 (0.300)

3.18 THRU(0.125)

1.57 (0.062)

2.59 (0.102) 5.08 (0.200)

6.35 (0.250) TYP.

1.02 TYP.(0.040)

3.30 MAX.(0.130)

0.10 (0.004)

2.54 (0.100)

2.54 (0.100)

1.57 (0.062)

2.59 (0.102)

12.7 (0.500)

5.08 (0.200)

1.02 (0.040) TYP.

2.54 (0.100)

3.18 THRU(0.125)

0.76 (0.030) TYP.

5.08 MIN.(0.200)

6.35 (0.250) TYP.

3.81 MAX.(0.150)

0.10 (0.004)

2.54 (0.100)

mm (inches)

mm (inches)


031121




15


• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 60 Watts• Frequency: DC to 6.0 GHz• VSWR: 1.20:1 @ 4 GHz, 1.30:1 @ 6 GHz• Operating Temperature Range: -55ºC to +150ºC• Temperature Coefficient: <150 ppm/ºC• Tabs: Silver• Lead-Free, RoHS Compliant

P/N: FT10515N0050J01ELECTRICAL SPECIFICATIONS

• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 100 Watts• Frequency: DC to 2.5 GHz• VSWR: 1.15:1• Operating Temperature Range: -55˚C to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant

1.02 TYP.(0.040)

3.18 THRU(0.125)

6.35 (0.250)

13.1 (0.515)

6.73 (0.265)

3.18 (0.125)

3.18 (0.125)

1.57 (0.062)3.81 MAX.

(0.150)

6.35 (0.250) TYP.

2.59 (0.102)0.10 (0.004)

mm (inches)

mm (inches)


.040 TYP. (1.02 mm)

.125 THRU (3.18 mm)

.250 (6.35 mm)

.515 (13.1 mm) .265

(6.73 mm) .125 (3.18 mm)

.125 (3.18 mm)

.062 (1.57 mm)

.150 MAX. (3.81 mm)

.250 TYP. (6.35 mm)

.102 (2.59 mm) .004

(.101 mm)

031121




16


• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 60 Watts• Frequency: DC to 6 GHz• VSWR: 1.20:1 @ 4 GHz, 1.30:1 @ 6 GHz• Operating Temperature Range: -55˚C to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant


• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 100 Watts• Frequency: DC to 4 GHz• VSWR: 1.20:1• Operating Temperature Range: -55˚C to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant

6.35 TYP.(0.250)

3.18 (0.125)

3.18 THRU(0.125)

3.18(0.125)

6.73 (0.265)

13.1 (0.515)

2.59 (0.102) 1.02 TYP.(0.040)

6.35(0.250)

010 (0.004)

1.57 (0.062)

3.81 MAX.(0.150)


.040 TYP. (1.02 mm)

.125 THRU (3.18 mm)

.250 (6.35 mm)

.515 (13.1 mm) .265

(6.73 mm) .125 (3.18 mm)

.125 (3.18 mm)

.062 (1.57 mm)

.150 MAX. (3.81 mm)

.250 TYP. (6.35 mm)

.102 (2.59 mm) .004

(.101 mm)

031121




17

mm (inches)

mm (inches)






.250 TYP.(6.35 mm)

.125 (3.18 mm)

.125 THRU (3.18 mm)

.125 (3.18 mm)

.265 (6.73 mm)

.515 (13.1 mm)

.102 (2.59 mm)

.040 TYP. (1.02 mm)

.250 (6.35 mm)

.004 (.101 mm)

.062 (1.57 mm)

.150 MAX. (3.81 mm)

.250 TYP.(6.35 mm)

.125 (3.18 mm)

.125 THRU (3.18 mm)

.125 (3.18 mm)

.265 (6.73 mm)

.515 (13.1 mm)

.102 (2.59 mm)

.040 TYP. (1.02 mm)

.250 (6.35 mm)

.004 (.101 mm)

.062 (1.57 mm)

.150 MAX. (3.81 mm)

031121




18


• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 60 Watts• Frequency: DC to 4 GHz• VSWR: 1.20:1 @ 4 GHz, 1.30:1 @ 6 GHz• Operating Temperature Range: -55˚C to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant



1.57 (0.062)

6.35 (0.250) TYP.

1.02 TYP.(0.040)

6.35 (0.250)

3.18 THRU(0.125)

3.18 (0.125)

3.18 (0.125)

6.73 (0.265)

13.1 (0.515)

2.59 (0.102)

3.81 MAX.(0.150)

0.10 (0.004)

mm (inches)

mm (inches)


.062 (1.57 mm)

.250 TYP. (6.35 mm)

.040 TYP.(1.02 mm)

.250 (6.35mm)

.125 THRU (3.18 mm)

.125 (3.18 mm)

.125 (3.18 mm)

.265 (6.73 mm)

.515 (13.1 mm)

.102 (2.59 mm)

.150 MAX. (3.81 mm)

.004 (.101 mm)

031121




19






3.96 THRU(0.156)

4.77 TYP.(0.188)

9.53(0.375)

3.93 TYP.(0.155)

1.02 TYP.(0.040)

1.57 (0.062)14.2 (0.560)

6.35 (0.250)

2.59 (0.102)

6.35 TYP.(0.250)

3.81 MAX(0.150)

0.10 (0.004)

mm (inches)

mm (inches)

.062 (1.57 mm)

.250 TYP. (6.35 mm)

.040 TYP.(1.02 mm)

.250 (6.35mm)

.125 THRU (3.18 mm)

.125 (3.18 mm)

.125 (3.18 mm)

.265 (6.73 mm)

.515 (13.1 mm)

.102 (2.59 mm)

.150 MAX. (3.81 mm)

.004 (.101 mm)

031121




20






mm (inches)

mm (inches)

.156 THRU (3.96 mm)

.188 TYP.(4.77 mm).

.375 (9.53 mm)

.155 TYP.(3.93 mm)

.040 TYP.(1.02 mm)

.062 (1.57 mm)

.560 (14.2 mm)

.250 (6.35 mm)

.102 (2.59 mm)

.250 TYP.(6.35 mm)

.150 MAX. (3.81 mm)

.004 (.101 mm)

.156 THRU (3.96 mm)

.188 TYP . (4.77 mm).

.375 (9.53 mm)

.155 TYP.(3.93 mm)

.040 TYP.(1.02 mm)

.062 (1.57 mm)

.560 (14.2 mm)

.250 (6.35 mm)

.102 (2.59 mm)

.250 TYP.(6.35 mm)

.150 MAX. (3.81 mm)

.004 (.101 mm)

031121




21


• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• • Power: 75 Watts• • Frequency: DC to 4.0 GHz• • VSWR: 1.25:1• • Operating Temperature Range: -55˚C to +150˚C• • Temperature Coefficient: <150 ppm/˚C• • Tabs: Silver• • Lead-Free, RoHS Compliant



4.77 TYP.(0.188)

9.53(0.375)

3.96 THRU(0.156)

14.2 (0.560)

6.35(0.250)

3.93 (0.155) TYP.

1.57 (0.062)

1.02 TYP.(0.040)

6.35 TYP.(0.250)

3.81 MAX.(0.150)

2.59 (0.102)

0.10 (0.004)

mm (inches)

mm (inches)

For Part Number Code, see page 14.


.188 TYP.(4.77 mm)

.375 (9.53 mm)

.156 THRU (3.96 mm)

.560 (14.2 mm)

.250 (6.35 mm)

.155 TYP.(3.93 mm)

.062 (1.57 mm)

.040 TYP.(1.02 mm)

.250 TYP.(6.35 mm)

.150 MAX. (3.81 mm)

.102 (2.59 mm) .004

(.101 mm)

031121




22




• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 50 Watts• Frequency: DC to 6 GHz• VSWR: 1.10:1 @ 4.5 GHz, 1.18:1 @ 6.0GHz• Operating Temperature Range: -55˚C to +150˚C• Tabs: Silver• Lead-Free, RoHS Compliant

2.59 (0.102)

2.92 (0.115)

20.3 (0.800)

14.2 (0.560)

8.89 (0.350)

5.84 (0.230)

3.30 THRU(0.130)

0.10 (0.004)

1.57 (0.062)

1.02 TYP.(0.040)

6.35 (0.250) TYP.

3.81 MAX.(0.150)


.188 TYP(4.77 mm)

.375 (9.53 mm)

.156 THRU (3.96 mm)

.560 (14.2 mm)

.250 (6.35 mm)

.155 TYP.(3.93 mm)

.062 (1.57 mm)

.040 TYP.(1.02 mm)

.250 TYP.(6.35 mm)

.150 MAX. (3.81 mm)

.102 (2.59 mm) .004

(.101 mm)

mm (inches)

mm (inches)

031121




23



1.02 TYP.(0.040)

1.57 (0.062)

4.75(0.188)

9.53(0.375)

6.35(0.250)

22.1 (0.870)

14.2 (0.560)

3.96 THRU(0.156)

0.10 (0.004)2.59 (0.102)

3.81 MAX.(0.150)

6.35 TYP.(0.250)

mm (inches)

mm (inches)

031121


• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 100 Watts• Frequency: DC to 6 GHz• VSWR: 1.10:1 @ 4.5 GHz, 1.20:1 @ 6.0GHz• Operating Temperature Range: -55˚C to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant

2.59 (0.102)

2.92 (0.115)

20.3 (0.800)

14.2 (0.560)

8.89 (0.350)

5.84 (0.230)

3.30 THRU(0.130)

0.10 (0.004)

1.57 (0.062)

1.02 TYP.(0.040)

6.35 (0.250) TYP.

3.81 MAX.(0.150)





24



mm (inches)

mm (inches)


031121



.040 TYP.(1.02 mm).

.062 (1.57 mm)

.188 (4.75 mm)

.375 (9.53 mm)

.250 (6.35 mm)

.870 (22.1 mm)

.560 (14.2 mm)

.156 THRU (3.96 mm)

.004 (.101 mm) .102

(2.59 mm)

.150 MAX. (3.81 mm)

.250 TYP.(6.35 mm)

.040 TYP.(1.02 mm).

.062 (1.57 mm)

.188 (4.75 mm)

.375 (9.53 mm)

.250 (6.35 mm)

.870 (22.1 mm)

.560 (14.2 mm)

.156 THRU (3.96 mm)

.004 (.101 mm) .102

(2.59 mm)

.150 MAX. (3.81 mm)

.250 TYP.(6.35 mm)




25

P/N: FT10975N0050JBKELECTRICAL SPECIFICATIONS

• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 200 Watts• Frequency: DC to 2.2 GHz• VSWR: 1.20:1 @ 2 GHz, 1.30:1 @ 2.2 GHz• Operating Temperature Range: -55˚C to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant




.120 TYP.(3.05 mm).

.062 (1.57 mm)

.188 (4.75 mm)

.375 (9.53 mm)

.250 (6.35 mm)

.870 (22.1 mm)

.560 (14.2 mm)

.156 THRU (3.96 mm)

.004 (.101 mm) .102

(2.59 mm)

.150 MAX. (3.81 mm)

.250 TYP. (6.35 mm)

.040 TYP.(1.02 mm)

.250 TYP. (6.35 mm)

.165 (4.19 mm)

.004 (.101 mm)

.188 (4.78 mm)

.125 THRU (3.18 mm)

.975 (24.8 mm)

.725 (18.4 mm) .375

(9.53 mm)

.385 (9.779 mm)

.225 MAX. (5.715 mm)

.125 (3.18 mm)

.125 (3.18 mm)

mm (inches)

mm (inches)

031121




26




• Nominal Impedance: 50 Ω ±5% standard (other Ω values available)• Power: 100 Watts• Frequency: DC to 6 GHz• VSWR: 1.10:1 @ 4.5 GHz, 1.20:1 @ 6.0GHz• Operating Temperature Range: -55˚C to +150˚C• Temperature Coefficient: <150 ppm/˚C• Tabs: Silver• Lead-Free, RoHS Compliant


.040 TYP.(1.02 mm)

.250 TYP. (6.35 mm)

.165 (4.19 mm)

.004 (.101 mm)

.188 (4.78 mm)

.125 THRU (3.18 mm)

.975 (24.8 mm)

.725 (18.4 mm) .375

(9.53 mm)

.385 (9.779 mm)

.225 MAX. (5.715 mm)

.125 (3.18 mm)

.125 (3.18 mm)

.250 TYP. (6.35 mm)

.165 (4.19 mm)

.004 (.101 mm)

.188 (4.78 mm)

.125 THRU (3.18 mm)

.975 (24.8 mm)

.725 (18.4 mm) .375

(9.53 mm)

.385 (9.779 mm)

.225 MAX. (5.715 mm)

.125 (3.18 mm)

.125 (3.18 mm)

.120 TYP.(3.06 mm)

mm (inches)

mm (inches)

031121




27

GENERAL SPECIFICATIONS• Resistance: 100 Ω standard, (other Ω values available)• Resistive Tolerance: ±5% standard (2% Available)• Operating Temp Range: -55 to +150°C• Temperature Coefficient: <150 ppm/°C• Resistive Elements: Proprietary Thin Film• Substrate Material: Aluminum Nitride• Terminals: Silver• Lead-Free, RoHS Compliant• Reliability: MIL-PRF-55342• Non-Magnetic• Tape and Reel Specifications:

Part Number* W ± .010 L ± .010 T ± .005 A ± .005 B (Typ.) Capacitance (pF)

Power Max** (Watts)

CR11005TxxxxJ .050 .100 .025 .045 .020 .75 5WCR11206TxxxxJ .060 .120 .025 .055 .020 .90 15WCR12010TxxxxJ .100 .200 .040 .090 .020 1.0 30WCR12525TxxxxJ .245 .245 .040 .130 .020 2.0 60WCR12525TxxxxJ01 .245 .245 .040 .130 .020 2.0 100WCR13725TxxxxJ .250 .375 .040 .198 .025 4.15 150WCR13737TxxxxJ .370 .370 .040 .330 .025 6.0 250W

* xxxx denotes Ohm value.** Test Condition: Chip soldered to a large copper carrier whose surface is at 100° C; maximum rated power applied.Specification: The resistance of the film shall change no more than 0.5% during and after a 1000-hr. Burn-in per Mil-PRF-55342.

POWER DERATING

0

20

40

60

80

100%

+25˚C-25˚C 0˚C-50˚C 150˚C125˚C100˚C75˚C+50˚C


Po

wer

Dis

sip

atio

n


TopView

SideView

ResistiveAreaOvercoat

A

RP3 Series

High Power Resistive ProductsChip Resistors – CR1 Style

HOW TO ORDER

Case StyleCase SizeTerminationValue100 Ω = 010050 Ω = 0050

T xxxx JCR1 2010 TR

PackagingTR = Tape & Reel (Standard)BK = Plastic CarrierTU* (Optional)

ToleranceCode G JTol. ±2% ±5%




28110121

GENERAL SPECIFICATIONS• Resistance: 100 Ω standard, (other Ω values available)• Resistive Tolerance: ±2% standard• Operating Temp Range: -55 to +150°C• Temperature Coefficient: <150 ppm/°C• Resistive Elements: Proprietary Thin Film• Substrate Material: Aluminum Nitride• Terminals: Silver over Nickel• Lead-Free, RoHS Compliant• Reliability: MIL-PRF-55342• Tape and Reel Specifications:

WT W

L

LA

LT

T

TopView

RP4 Series RP5 Series

SideView

BottomView

Overcoat

WT W

LT

T

L

Part Number* W ± 0.010 L ± 0.010 T ± 0.005 WT ± 0.005 LT ±0.005 LA ± 0.005 Capacitance (pF)

Power Max** (Watts)

CS12010TxxxxG .100 .200 .040 .090 .030 .095 .95 pF 10WCS12525TxxxxG .245 .245 .040 .120 .040 .110 1.85 pF 20WCS13725TxxxxG .250 .375 .040 .120 .050 .195 3.0 pF 30WCS13737TxxxxG .370 .370 .040 .360 .050 .195 3.5 pF 40W

Part Number* W ± 0.010 L ± 0.010 T ± 0.005 WT ± 0.005 LT ±0.005 Power Max** (Watts)

CW12010TxxxxG .100 .200 .040 .090 .030 4WCW12525TxxxxG .245 .245 .040 .120 .040 6WCW13725TxxxxG .250 .375 .040 .120 .050 8WCW13737TxxxxG .370 .370 .040 .360 .050 10W

* xxxx denotes Ohm value.** Test Condition: Chip soldered to a via patch on a 30-mil-thick Rogers RO4350 board; Land surfaces at 100° C; maximum rated power applied.Specification: The resistance of the film shall change no more than 0.5% during and after a 1000-hr. Burn-in per Mil-PRF-55342.

HOW TO ORDER

High Power Resistive ProductsSurface Mount Chip Resistors – CS1 and CW Style


T xxxx JCS1 2010 TR

PackagingTR = Tape & Reel (Standard)BK = Plastic Carrier





29110121

POWER DERATING

TCR CURVE

0

20

40

60

80

100%

+25˚C-25˚C 0˚C-50˚C 150˚C125˚C100˚C75˚C+50˚C


Po

wer

Dis

sip

atio

n


High Power Resistive ProductsSurface Mount Chip Resistors – CS1 and CW Style

30

35

40

45

50

55

60

-80 -60 -40 -20 0 20 40 60 80 100 120 140

Resi

stan

ce (O

hm)

Temperature (°C)

CW Series Resistor Value Change over Temperature

CW1Q036FTI CW1Q050GTI CW1Q054FTI

Linear (CW1Q036FTI) Linear (CW1Q050GTI) Linear (CW1Q054FTI)




30

GENERAL SPECIFICATIONS• Resistance: 50 and 100 Ω standard

(contact factory for custom resistance values)• Resistive Tolerance: ±5% standard (2% available)• Operating Temp. Range: -55ºC to +150ºC• Temperature Coefficient: <150 ppm/ºC• Resistive Elements: Proprietary Thin Film• Substrate Material: Aluminum Nitride• Lead Terminals: Silver• Cover: Alumina• RoHS Compliant• Non-Magnetic

Part Number* W ± .010 L ± .010 T ± .005 A Capacitance(pF)

Power Max**(Watts)

LR12010TxxxxJ .100 .200 .040 .040 1.0 30WLR12335TxxxxJ .350 .230 .040 .040 3.15 50WLR12525TxxxxJ .245 .245 .040 .040 2.0 60WLR12335TxxxxJ01 .350 .230 .040 .040 3.15 100WLR13725TxxxxJ .250 .375 .040 .040 4.15 150WLR13725TxxxxJ01 .250 .375 .040 .120 4.15 150WLR13737TxxxxJ .370 .370 .040 .040 6.0 250WLR13737TxxxxJ01 .370 .370 .040 .120 6.0 250W

* xxxx denotes Ohm value.** Test Condition: Chip soldered to a large copper carrier whose surface is at 100° C; maximum rated power applied.Specification: The resistance of the film shall change no more than 0.5% during and after a 1000-hr. Burn-in per MIL-PRF-55342

POWER DERATING

0

20

40

60

80

100%

+25˚C-25˚C 0˚C-50˚C 150˚C125˚C100˚C75˚C+50˚C


Po

wer

Dis

sip

atio

n


L

W

T

6.35 (0.250) TYP.

2.03 (0.080) MAX.0.10 (0.004) TYP.

A

High Power Resistive ProductsLeaded Chip Resistors – LR1 Style

mm (inches)

HOW TO ORDER


T xxxx JLR1 2010 BK






31

GENERAL SPECIFICATIONS• Nominal Impedance: 50 Ω• Resistive Tolerance: ±2% standard• Operating Temp Range: -55 to +150˚C• Temperature Coefficient: ±150 ppm/˚C• Resistive Elements: Tantalum, Thin Film Processed• Substrate Material: Aluminum Nitride• Terminals: Silver over Nickel• Lead-Free, RoHS Compliant• Reliability: MIL-PRF-55342• Tape & Reel Specifications:

mm

Part Number W ±.010 L ±.010 T ±.005 LT ±.005 WT ±.005 LA ±.005 Frequency Range (GHz)

VSWR(Typ.)

Power Max*(Watts)

CZ12010T0050G .100 .200 .040 .040 .090 .115 DC - 3.0 1.20:1 10WCZ12010T0050G02 .100 .200 .040 .020 .090 .140 DC - 3.0 1.20:1 10WCZ12525T0050G .245 .245 .040 .030 .125 .170 DC - 4.0 1.25:1 20W

* Test Condition: Chip soldered to a via patch on a 30-mil-thick Rogers RO4350 board; Land surfaces at 100° C; maximum rated power applied. Specification: The resistance of the film shall change no more than 0.5% during and after a 1000-hr. Burn-in per Mil-PRF-55342.

HOW TO ORDER

POWER DERATING

0

20

40

60

80

100%

+25˚C-25˚C 0˚C-50˚C 150˚C125˚C100˚C75˚C+50˚C


Po

wer

Dis

sip

atio

n


Surface Mount Chip TerminationsCZ1 Style

CZ12010T0050G & CZ12010T0050G02 CZ12525T0050G


T 0050 JCZ1 2010 TR

PackagingTR = Tape & ReelBK = Plastic Carrier





32

Surface Mount Chip TerminationsCZ1 Style

GENERAL SPECIFICATIONS• Nominal Impedance: 50 Ω• Resistive Tolerance: ±2% standard• Operating Temp Range: -55 to +150˚C• Temperature Coefficient: ±150 ppm/˚C• Resistive Elements: Tantalum, Thin Film Processed• Substrate Material: Aluminum Nitride• Terminals: Silver over Nickel• Lead-Free, RoHS Compliant• Reliability: MIL-PRF-55342• Tape & Reel Specifications:

mm

Part Number W ±.010 L ±.010 T ±.005 LT ±.005 WT ±.005 LA ±.005 Frequency Range (GHz)

VSWR(Typ.)

Power Max*(Watts)

CZ13725T0050G .250 .375 .040 .050 .125 .260 DC - 2.2 1.20:1 30WCZ13737T0050G .370 .370 .040 .050 .125 .275 DC - 3.0 1.25:1 40W

* Test Condition: Chip soldered to a via patch on a 30-mil-thick Rogers RO4350 board; Land surfaces at 100° C; maximum rated power applied. Specification: The resistance of the film shall change no more than 0.5% during and after a 1000-hr. Burn-in per Mil-PRF-55342.

HOW TO ORDER

POWER DERATING

0

20

40

60

80

100%

+25˚C-25˚C 0˚C-50˚C 150˚C125˚C100˚C75˚C+50˚C


Po

wer

Dis

sip

atio

n


CZ13725T0050G CZ13737T0050G


T 0050 JCZ1 2010 TR






33

GENERAL SPECIFICATIONS• Nominal Impedance: 50 Ω• Resistive Tolerance: ±5% standard, ±2% available• Operating Temp Range: -55 to +150˚C• Temperature Coefficient: ±150 ppm/˚C• Resistive Elements: Tantalum, Thin Film Processed• Substrate Material: Aluminum Nitride• Terminals: Silver over Nickel• Lead-Free, RoHS Compliant• Reliability: MIL-PRF-55342• Tape and Reel Specifications:

mm

Part Number W ±.010 L ±.010 T ±.005 A ±.005 B (Typ.) Frequency (GHz)

VSWR (Typ.)

Power Max* (Watts)

CT11020T0050J .200 .100 .025 .034 .020 DC to 18.0 1.25:1 20WCT12010T0050J .100 .200 .040 .050 .060 DC to 4.0 1.20:1 30WCT12525T0050J .245 .245 .040 .090 .020 DC to 4.0 1.15:1 60WCT12525T0050J01 .245 .245 .040 .050 .040 DC to 2.5 1.15:1 100WCT12525T0050J02 .245 .245 .040 .090 .020 DC to 4.0 1.20:1 100WCT12335T0050J .350 .230 .040 .100 .030 DC to 4.0 1.15:1 100WCT13725T0050J .250 .375 .040 .090 .025 DC to 4.0 1.20:1 125WCT13725T0050J01 .250 .375 .040 .050 .055 DC to 1.1 1.20:1 150WCT13725T0050J02 .250 .375 .040 .090 .025 DC to 4.0 1.25:1 150WCT13737T0050J .370 .370 .040 .120 .025 DC to 2.0 1.25:1 150WCT13737T0050J01 .370 .370 .040 .130 .065 DC to 1.0 1.20:1 250W

* Test Condition: Chip soldered to a large copper carrier whose surface is at 100°C; maximum rated power applied. Specification: The resistance of the film shall change no more than <2% during and after a 1000-hr. Burn-in per MIL-PRF-55342.

HOW TO ORDER

TopView

SideView

Overcoat

ResistiveArea

POWER DERATING

0

20

40

60

80

100%

+25˚C-25˚C 0˚C-50˚C 150˚C125˚C100˚C75˚C+50˚C


Po

wer

Dis

sip

atio

n


Leaded Chip TerminatonsCT1 Style

031021


T 0050 JCT1 2010 TR






34

GENERAL SPECIFICATIONS• Nominal Impedance: 50 Ω• Resistive Tolerance: ±5% standard, ±2% available• Operating Temp Range: -55 to +150°C• Temperature Coefficient: ±150 ppm/°C• Resistive Elements: Tantalum, Thin Film Processed• Substrate Material: Aluminum Nitride• Terminals: Silver over Nickel• Lead-Free, RoHS Compliant• Reliability: MIL-PRF-55342

mm

Part Number W ±.010 L ±.010 T ±.005 A ±.005 Frequency (GHz)

VSWR (Typ.)

Power Max* (Watts)

LT11020T0050J 0.200 0.100 0.025 0.040 DC to 18.0 1.25:1 20WLT12010T0050J 0.100 0.200 0.040 0.040 DC to 4.0 1.20:1 30WLT12525T0050J 0.245 0.245 0.040 0.040 DC to 4.0 1.15:1 60WLT12525T0050J01 0.245 0.245 0.040 0.040 DC to 2.5 1.15:1 100WLT12525T0050J02 0.245 0.245 0.040 0.040 DC to 4.0 1.20:1 100WLT12335T0050J 0.350 0.230 0.040 0.040 DC to 4.0 1.15:1 100WLT13725T0050J 0.250 0.375 0.040 0.040 DC to 4.0 1.20:1 125WLT13725T0050J01 0.250 0.375 0.040 0.040 DC to 1.1 1.20:1 150WLT13725T0050J02 0.250 0.375 0.040 0.040 DC to 4.0 1.25:1 150WLT13725T0050J03 0.250 0.375 0.040 0.120 DC to 4.0 1.25:1 150WLT13737T0050J 0.370 0.370 0.040 0.040 DC to 2.0 1.25:1 200WLT13737T0050J01 0.370 0.370 0.040 0.040 DC to 1.0 1.20:1 250WLT13737T0050J02 0.370 0.370 0.040 0.040 DC to 2.0 1.25:1 250WLT13737T0050J03 0.370 0.370 0.040 0.120 DC to 2.0 1.25:1 250W

* Test Condition: Chip soldered to a large copper carrier whose surface is at 100°C; maximum rated power applied. Specification: The resistance of the film shall change no more than <2% during and after a 1000-hr. Burn-in per MIL-PRF-55342.

HOW TO ORDER

POWER DERATING

0

20

40

60

80

100%

+25˚C-25˚C 0˚C-50˚C 150˚C125˚C100˚C75˚C+50˚C


Po

wer

Dis

sip

atio

n


2.03 MAX.(0.080)

0.10 TYP.(0.004)

L

W

A

6.35 (0.250) TYP.

T

Leaded Chip TerminationsLT1 Style

030821

Case StyleCase SizeTermination

T 0050 JLT1 2010 BK



Value




35

SPECIFICATIONS• Substrate Material: Aluminum Nitride• Terminals: Silver• Operating Temp Range: -55ºC to +150ºC• RoHS Compliant

TopView

SideView

A

mm (inches)

Part Number W ±0.25 (0.010)

L ±0.25 (0.010)

T ±0.13 (0.005)

A ±0.13 (0.005)

B (Typ.)

RP31206JXXXXJTTR 1.52 (0.060) 3.05 (0.120) 0.64 (0.025) 1.40 (0.055) 0.51 (0.020)RP32010JXXXXJTTR 2.54 (0.100) 5.08 (0.200) 1.02 (0.040) 2.29 (0.090) 0.51 (0.020)RP32525JXXXXJTTR 6.22 (0.245) 6.22 (0.245) 1.02 (0.040) 3.30 (0.130) 0.51 (0.020)RP33725JXXXXJTTR 6.35 (0.250) 9.53 (0.375) 1.02 (0.040) 5.03 (0.198) 0.64 (0.025)RP33737JXXXXJTTR 9.40 (0.370) 9.40 (0.370) 1.02 (0.040) 8.38 (0.330) 0.64 (0.025)

HOW TO ORDER

RP3 1206 J XXXX J T TR

Series

Case SizeSee chart

above

TypeJ = Jumper

ToleranceJ = ±5%

TerminalT = Silver

PackagingTR = Tape & Reel

Value0100 = 100Ω

Contact factory for custom ratings and sizes.

High Power Resistive ProductsJumpers




36

mm (inches)

KYOCERA AVX’s Resistive Products Design Kits contain a selection of High Power Chip Resistors and Terminations with standard values of 50 Ohm and 100 Ohm. Operating frequencies are from DC to 6 GHz. All designs are manufactured with Non-toxic Aluminum Nitride base substrates.ORDER BY ITEM # BELOW

Item # Series Description Part# Sizes L x W x H Power Handling

RangeResistance

Value Tol. Qty

KIT-RP001

RP9 Series Surface Mount Chip

Terminations

RP92010T0050GTTR 5.08 x 2.54 x 1.02 (0.200 x 0.100 x 0.040) 10 Watt 50 Ohm ±2% 2

RP92525T0050GTTR 6.22 x 6.22 x 1.02 (0.245 x 0.245 x 0.040) 20 Watt 50 Ohm ±2% 2

RP4 Series Surface Mount Chip Resistors

RP42525R0050GTTR 6.22 x 6.22 x 1.02 (0.245 x 0.245 x 0.040) 20 Watt 50 Ohm ±2% 2




KIT-RP002

RP8 Series Chip Terminations

RP82010T0050JTTR 5.08 x 2.54 x 1.02 (0.200 x 0.100 x 0.040) 30 Watt 50 Ohm ±5% 2

RP83737T0050JTTR 9.40 x 9.40 x 1.02 (0.370 x 0.370 x 0.040) 150 Watt 50 Ohm ±5% 2

RP3 Series Chip Resistors

RP31005R0100JTTR 2.54 x 1.27 x 6.35 (0.100 x 0.050 x 0.025) 5 Watt 100 Ohm ±5% 2

RP33737R0100JTTR 9.40 x 9.40 x 1.02 (0.370 x N0.370 x 0.040) 250 Watt 100 Ohm ±5% 2

KIT-RP003

RPA Series Flange Mount Terminations RPA0300T0050JNBK

7.62 x 5.08 x 2.59 (0.300 x 0.200 x 0.102) *Add flange dimensions

per catalog

20 Watt 50 Ohm ±5% 2

RP6 Series Flange Mount

Resistors RP60300R0100JNBK

7.62 x 5.08 x 2.59 (0.300 x 0.200 x 0.102) *Add flange dimensions

per catalog

20 Watt 100 Ohm ±5% 2

High Power Resistive ProductsResistive Products Design Kits




37

RESISTIVE PRODUCTS QUALITY ASSURANCEKYOCERA AVX is an ISO 9001 registered company that is dedicated to the Continuous Process Improvement for all of its products in order to satisfy the needs and expectations of its customers.

TAPE AND REEL SPECIFICATIONSAll KYOCERA AVX Resistive Surface Mount and Chip Products are supplied in tape & reel (1000 chips per reel) and are ideal for automated pick and place manufacturing applications.

PACKAGING TAPE DIMENSIONS

D 0.10(0.004)

øø

øø

Embossed Carrier

Embossed Cavity

Thickness: 0.1 (0.004) Max.

mm (inches)

Chip Size

A Dim.

B Dim.

C Dim.

D Dim.

E Dim.

F Dim.

H Dim.

I Dim.

Pcs. / per reel

1206 8.13 (0.320) 2.03 (0.080) 4.06 (0.160) 3.56 (0.140) 3.56 (0.140) 1.78 (0.070) 0.08 (0.003) 0.254 (0.010) 10002010 11.9 (0.469) 3.05 (0.120) 4.06 (0.160) 5.59 (0.220) 5.46 (0.215) 1.78 (0.070) 1.78 (0.070) 0.254 (0.010) 10002525 11.9 (0.469) 7.11 (0.280) 8.13 (0.320) 7.11 (0.280) 5.46 (0.215) 1.78 (0.070) 1.78 (0.070) 0.254 (0.010) 10003725 15.2 (0.598) 7.11 (0.280) 8.13 (0.320) 9.91 (0.390) 9.91 (0.390) 1.78 (0.070) 1.78 (0.070) 0.254 (0.010) 1000*3737 24.0 (0.945) 10.4 (0.409) 11.9 (0.469) 10.4 (0.409) 11.4 (0.449) 1.78 (0.070) 1.78 (0.070) 0.254 (0.010) 1000*

Orientation – all input terminals face towards the sprocket holes of the tape.*500 pc. reels are available in these sizes.

High Power Resistive ProductsResistive Products Tape and Reel Specifications




38

CHIP ATTACHMENT AND PC BOARD RECOMMENDATIONSFor the mounting of chip or leaded devices, it is important to obtain a good solder joint between the device’s ground plane and the heat sink that is free of voids. Pre-tinning of the device’s ground plane and the heat sink is recommended. The following are KYOCERA AVX recommendations:

PC board: Rogers Corp. 4350 or FR4; 30 mils thick; 1/2-oz. (0.7-mils-thick) copper cladding

Rectangular via array Triangular via array

Figure 1: Rectangular and triangular via arrays

Figure 2: Via-hole cross section and parameters

• Pattern: Rectangular array. Notes – There are two possible uniform patterns, designated Rectangular Array and Triangular Array respectively. For optimum design, it must be determined which pattern places the most via holes under a chip. This consideration can become fairly complex, since vias that are even partially under a chip can still contribute significantly to heat conduction. KYOCERA AVX has developed some useful algorithms to aid in optimum via-patch design; customer assistance is available from the factory. For most – but not all – situations, the rectangular array yields better results than its triangular counterpart.

Via holes: See Figure 2. Structure – plated through with 2-mil copper, filled with Sn62, Sn63 or Sn96 solder; Diameter = 16 mils; edge-to-edge spacing = 0.5 x diameter = 8 mils; Notes – The minimum via hole diameter is gener-ally a function of board thickness and is related to “walking” or breaking of the drill bit. The maximum via-hole diameter relates to the ability to wick up solder to the via’s full length. Different PC board fabricators will have different design rules that apply.

Hole Dia 0.41 (0.016)thick_Cu_Plate 0.05 (0.002)kth_sub 0.02 W/(in ºC)thick_sub 0.76 (0.030)k_sol 1.290 W/(in ºC)

thick_sol 0.05 (0.002)kth_cu 9.9 W/(in ºC)thick_Cu_foil 0.02 (0.0007)theta_1via_hole 35.1ºC/Watt

mm (inches)

Cu PLATING

Cu CARRIER

SOLDER

CROSS SECTION OF TYPICAL VIA HOLE

ASSUMPTIONS

CHIP RES. OR TERM.

Cu FOILON SUBSTRATE

SOLDER-FILLEDPLATED-THRU HOLE

High Power Resistive ProductsResistors and Terminations: Mounting and Attachment Recommendations




39

VIA HOLE CALCULATIONS FOR SURFACE MOUNT RESISTORS AND TERMINATIONS

The calculated thermal resistance of each via, with the assumptions in Figure 2, is 35ºC/Watt. Table 1 and Table 2 below present calculated performance parameters of KYOCERA AVX’s standard via patches for various sizes of RP9-style SMT chip terminations and RP4-style SMT chip resistors.Assumptions:1. No lateral heat transfer on surface.2. Board is solder attached to an ideal heat sink.3. Thermal resistance of each via is 35ºC/Watt.NOTE: The screws shown are not calculated in the tables.

Assumptions:1. No lateral heat transfer on surface of board.2. Board is solder attached to an ideal heat sink.3. Thermal resistance of each via is 35ºC/Watt.

Table 1: Calculated Via-Patch Performance for RP9-Style Terminations

Table 2: Calculated Via-Patch Performance for RP4-Style Resistors

mm (inches)

mm (inches)

Chip Type RP9

Size (L X W)

Rated Power of Chip (Watts)

Number of Vias

Thermal Resistance

of Board (°C/Watt)

Temperature drop across

board at rated Power

(°C)5.08 x 2.54 (0.200 x 0.100) 10 30 1.17 11.76.35 x 6.35 (0.250 x 0.250) 20 88 0.40 8.09.53 x 6.35 (0.375 x 0.250) 30 132 0.27 8.19.53 x 9.53(0.375 x 0.375) 40 204 0.17 6.9

Chip Type RP4

Size (L X W)


Number of Vias

Thermal Resistance

of Board (°C/Watt)


board at rated Power

(°C)5.08 x 2.54 (0.200 x 0.100) 10 20 1.75 17.56.35 x 6.35 (0.250 x 0.250) 20 48 0.73 14.69.53 x 6.35 (0.375 x 0.250) 30 96 0.36 10.89.53 x 9.53(0.375 x 0.375) 40 144 0.24 9.7

Filled via holes0.25 (0.010) min. dia.

Conductor pad5.08 (0.200) typical larger

than the component

Surface-mounted chip RP9 Thermination

Figure 3

Figure 3


Surface-mounted chip RP4 ResistorGround plane

Ground plane





40

ATTACHMENT RECOMMENDATIONS FOR LEADED RESISTORS AND TERMINATIONS

Figure 5: PC Board Mounted Chip Resistor

Figure 6: PC Board Mounted Chip Termination

When mounting chips, the solder interface to the mounting surface has a crucial bearing on performance. Even with very careful soldering technique, voids (porosity) and de-wetting are difficult to avoid. Using Scanning Acoustic Microscopy (SAM), radiographic analysis, and metallographic sectioning, KYOCERA AVX has studied solder joints made with a variety of techniques. One result is that where typical surface mount assembly techniques are used, such as those involving solder paste, porosity levels of 10–25% should be expected. Note that this directly transfers to the power rating of the part, i.e., its power handling capability will decrease in approximately the same

proportion.Here are some suggestions to improve solder joint integrity:Avoid the use of hold-down clamps or springs. Loading the solder in compression during melting forces it out of the bond area and does not permit the “Z” direction movement required during solidification to reduce shrinkage porosity. Further, the thermal mass of the hold-down fixture may cause a lag in temperature, resulting in a cooler part and loss of solder in the bond area when the chip eventually reaches the correct temperature. (KYOCERA AVX solder type recommendations Sn62 or Sn96.)


Ground plane Heat Sink/Ground plane


than the component


than the component






41

ATTACHMENT RECOMMENDATIONS TO GROUND PLANE FOR LEADED AND FLANGED RESISTORS AND TERMINATIONS

Avoid introducing solder to the entire bond area prior to soldering, i.e. do not use a solder pre-form the same size as the entire resistor chip. Solder pre-form should be 5-10%smaller in size than the device’s ground plane. Porosity reduction is enhanced by permitting the solder to wick through the joint area by capillary action, preferably from a central location.Reduce the soldering time (temperature above solder melting point) to 20-30 seconds maximum in order to avoid scavenging of the silver plating, intermetallic formations, solder melting point alteration, etc. Reasonably good results have been achieved at KYOCERA AVX using lengths of solid Sn96 (Sn96.5/Ag3.5) wire, about 0.030” in diameter, placed in the center

of the chip, with RMA flux applied to both chip and mounting surface. This process has been shown to result in porosity levels of 8-12%; optimized solder volumes may yield even better results.

Table 3: Recommended Solders

Alloy Composition Solidus Liquidus

Sn62 62.5 Sn, 36.1 Pb, 1.4 Ag 179°C 179°C

Sn63 63 Sn, 37 Pb 183°C 183°CSn96 96 Sn, 4 Ag 221°C 221°C

Ground plane

ChipResistor

Tab TabResistive film

Microstrip substrate Microstrip substrate

Ground plane

Printed circuit boardcopper cladding,

1 oz. min., 2 oz. preferred

Chip resistor

Figure 7: Ground plane Mounted Chip Resistor

Figure 8: Ground plane Mounted Chip Termination

FLANGED RESISTORS AND TERMINATIONS

Housing

Flange

AlN chip

Al2O3 cover

TabSolder

PC board

Flat, lock washer & screw

The area under the device should be flat to less than 0.001” and free of burrs and scratches. For maximum heat transfer from the device to the heat sink use either thermal grease or a thermal gasket. Keep the thickness of the grease to less than 0.002”. Be sure to form a small loop in the tab, making sure you support it while doing so. This will act as a strain relief as the heat

is dissipated and transferred to the housing and PC board. Seat the device into the ther-mal grease and install screws with lock and flat washers, torque as specified.

Thread No. Mounting Torque 4-40 6 inch-lbs. 6-32 8 inch-lbs. 8-32 2 inch-lbs. 10-24 18 inch-lbs.

Position the tab over the circuit and solder in place.





42

DESIGN, MEASUREMENT AND PERFORMANCEAs the wireless revolution extends component requirements upward in frequency, higher in operating power, and smaller in size, performance demands on resistive devices grow ever more stringent. Chip terminations made with resistive films are typically used as dummy loads or to absorb power that appears at the normally isolated ports of circulators, couplers, and hybrids as a result of mismatches, imperfect directivity, or imbalances somewhere in the system, while chip resistors perform the same function in Wilkinson power dividers. Reliable design places conservative limits on the maximum temperature of the resistive film and uses substrate materials that closely match the film’s coefficient of thermal expansion (TCE).Limiting the resistive film’s temperature requires an insulating substrate with high thermal conductivity. Other desirable properties include temperature-independent (over a reasonable range) dielectric constant at microwave frequencies, physical strength, good adhesion to film resistive materials, and imperviousness to humidity and processing chemicals used in microelectronic assembly. For many years in the USA, beryllium oxide (BeO) has been the substrate of choice to meet these requirements – despite the fact that BeO dust and powder are known to be hazardous and to require special handling and disposal techniques. The international community, however, has opposed the use of BeO, and so in recent years an alternate material, aluminum nitride (AlN), has found increasing use as a substitute. Table 1 compares typical properties of AlN to BeO; data for 99%Alumina is included for reference.Our focus herein will be on the Aluminum Nitride resistive product line developed at KYOCERA AVX and will discuss design considerations and test methodologies for bare chips as well as those mounted in various configurations.

TABLE 1: Physical Properties of Aluminum Nitride and Beryllium Oxide

Property AIN BeO Al203, 99%

Dielectric constant @ 1 MHz 9.0 6.7 9.9Loss tangent @ 1 MHz 0.05 0.04 0.04Thermal conductivity (W/mK) @ 25°C 180 275 25

@ 100°C 150 200 —@ 200°C 125 15 0 —

Thermal expansion coefficient (10–6/°C) 4.2 7.2 7.1Density (g/cm3) 3.30 2.85 3.89

STRUCTURES, IMPLEMENTATIONS, AND CONFIGURATIONSFigure 1 depicts a basic chip resistor consisting of a resistive film between two conductive terminations. A conductive ground plane covers the chip’s bottom side. The chip body, or substrate, is comprised of AlN.In general, the chip’s resistive section and conductors can be implemented in either thick-film, thin-film, or some combination of technologies. As used here, the terms thick and thin refer to the fabrication process, as well as the resultant film depth dimension. In thick-film technology, a conductive or resistive paste is applied to the substrate using a screen printer. The paste is then cured according to a prescribed time-temperature cycle.Typical thick-film thicknesses are on the order of 0.5–1.0 mils. Silver, platinum-silver, or palladium-silver are industry standard conductors; ruthenium dioxide is a typical core material for the resistive paste. Different resistivity values are achieved by changing the resistive paste composition – the proportion of resistive particles, glass frit, and organic binder – and by altering or augmenting the curing cycle. Final resistance values are achieved by active trimming, usually with a laser.

Thin-film coatings are typically applied by sputtering or evaporation.1 In the latter process, a source material is heated in an evacuated chamber until its vapor pressure is close to 10-2 torr and source atoms evaporate onto a nearby target substrate. In the former process, the substrate to be coated and a target made of the material to be sputtered are placed in a chamber filled with inert gas at low pressure. An arc is struck in the gas, with the substrate placed at ground electrical potential and the target at a high negative potential. The target’s high potential causes it to be bombarded by positive gas ions in the plasma, to the point where atoms (or molecular fragments) are dislodged that migrate and adhere to the substrate. Typical thicknesses of sputtered materials are in the hundreds or low thousands of angstroms; greater thicknesses are achieved by plating up, a separate process. KYOCERA AVX’s current implementation for most resistive products is in sputtered thin film. Conductors are silver-plated copper; the resistive material is tantalum nitride. Different resistivity values are achieved by controlling the Ta2N thickness and the way in which it is annealed. An important feature of tantalum nitride is its (so-called) anodic property: By either electrical or thermal means a surface oxide layer can be created that acts to seal and protect the underlying film. As with thick film, final resistance values are usually achieved by laser trimming.Figure 2 depicts a chip termination. Terminations usually have two features not found on simple resistors: an edge wraparound that connects one end of the resistor to the ground plane and a structure or pattern that matches the impedance of the resistive film to some specified value, most commonly 50 ohms.

Figure 1: A Chip Resistor

Resistive film

Conductive contact

Ground planeA

A

Section A-A

Resistive film

Conductive contact

Wraparound A

A

Section A-A

Impedance- matching structure

Ground plane

Figure 2: A Chip Termination

High Power Resistive ProductsResistors and Terminations: Engineering Guidelines




43

Both resistors and terminations are available in several different package styles. Those shown in Figs. 1 and 2 are meant to be mounted (usually by soldering) to a metallic ground plane, either in a cutout in a microstrip board or adjacent to a board edge (see Figure 3a). The contact area on the chip has a silver tab parallel-gap welded to it; the free end of the tab is soldered to the microstrip trace. Heat generated in the resistive film is conducted by the chip substrate to the ground plane. Other configurations are designed to avoid the necessity of a cutout or proximity to a board edge; these are so-called surface mount parts and are typically soldered to a via-patch on the PC board’s top surface. The via patch transfers the generated heat to the ground plane (see Figure 3b). A schematic overview of the various chip configurations and their designations is shown in Figure 4. Note that the RP5 style has no ground conductor; heat from the resistive film can be removed only through the end contacts, by convection, or by radiation. In practice, all resistive films are covered with a thin layer of a special epoxy that helps protect against solvents, moisture, handling, and other environmental hazards. Other packaging options (not shown) include ceramic covers for additional environmental protection and marking, and flange mounts that enable parts to be screwed down to mounting surfaces rather than soldered.

Figure 3a: Ground plane-mounted chip

Figure 3b: Surface-mounted chip

Figure 4: Resistor and termination styles

Ground plane

Chiptermination

Tab Resistive film

Microstrip substrate

Via patch

Ground plane

Resistive film

Chiptermination

Microstrip substrate

SPECS AND SPECMANSHIPThe thermal and electrical properties of resistive chips are intimately related, and very often can be traded off against one another. Among those important to end-users are:1. Resistance change over time (long term)2. Maximum temperature reached by the resistive film3. Resistance change with temperature (short term)4. Resistance change with applied voltage (short term)5. Reflection magnitude (VSWR) vs. frequency (terminations)

or capacitance (resistors)Property (1), variously termed “aging” or “stability” or “life,” refers to a change in the value of resistance that typically occurs over hundreds or thousands of hours of operation. It depends on the temperature reached by the film (which, among many factors, in turn depends on the properties of the mounting surface) and may depend on applied voltage as well. Property (2) may affect the lifetime or behavior of other devices in proximity to the resistive chip. Properties (3) and (4) are generally short-term – e.g., change occurs over a few minutes – measures of stability, usually presented as TCR, the Temperature Coefficient of Resistance and VCR, the Voltage Coefficient of Resistance. Property (5) is a fundamental measure of electrical performance needed for operation of the circuit or sub-system in which the resistive chip is used.

Resistive chip design must simultaneously consider properties (1) through (5) because of the tradeoffs involved. In practice, two problems arise, usually with (1), (2), and (5): End-users fail to precisely define the measurement conditions and vendors do likewise with their specifications.• Vendor power ratings, for example, are usually given for parts mounted

on “an ideal heat sink” or “an infinite heat sink” without explanation as to how a user can de-rate the part for operation on a real heat sink – or, for that matter, how the vendor arrived at the rating in the first place.

• It will be shown that temperatures vary along both film and mounting surfaces, yet virtually no one states exactly at what point the mounting surface temperature was, or ought to be, measured.

• Devices with ceramic covers make end-user film temperature measurements impossible.

• End-users are most often concerned about aging with RF power applied, whereas vendors typically use DC in their testing – and, in general, it makes a difference.

• End-users may specify VSWR, but not precisely define the interface between the resistive device and their board, e.g., Is the board thicker or thinner than a termination’s substrate? Is the user’s trace wider or narrower than the termination’s tab? What is the substrate dielectric constant? Is the tab being bent to provide strain relief? Etcetera. All of the above affect the actual VSWR that the user will measure. Vendors are often equally vague about the test conditions under which they determined the device’s specifications.

Style Device

RP9 termination

RP8

RP3

RP4

RP5

termination

resistor

resistor

resistor





44

In an informal survey of large-volume users of resistive devices, the following comments were made when respondents were asked what criteria they used to evaluate vendor claims about the supplied product:“We do no incoming inspection. We just put it in our system, blast it with power, and see if it survives. Beyond that, we just rely on manufacturers’ test data.”“Regardless of vendor, we operate at a maximum of half their claimed power rating. Vendors almost never say what the maximum film temperature should be. For measurements on flanged parts, we put a thermocouple on top of the flange, as near to the part as possible.”“We are more interested in maximum film temperature than aging. We verify the film temperature using thermal imaging [camera]. We will sometimes ask the vendor for de-capped parts. We locate our mounting-surface thermocouple at some point away from the device.”“We locate our ambient-temperature thermocouple under the part underneath the heat sink. We apply the maximum rated RF power for several thousand hours and check the temperature with an IR scanner. Failure is defined as aging beyond the specified tolerance at room temperature.”The vagueness and lack of consistency in user requirements and test methods make it difficult for a meticulous supplier to decide on rational design and test criteria, and correspondingly makes it easier for less meticulous vendors to specify and furnish their product. As a member of the meticulous supplier group, KYOCERA AVX has attempted to evolve a set of logical design steps and precisely defined test methodologies that will facilitate customer evaluation of our products.

DESIGN STEPS: A SUMMARYa) Select a thin- or thick-film implementation of the resistor and specific

materials.b) Determine the aging characteristics of the film at various temperatures

and applied voltages.c) For a given design, determine whether temperature or voltage will be

the limiting factor in aging. Note that the two effects may be interactive: Voltage aging may have a temperature dependency.

d) If film temperature must be held below a certain value with a specified maximum applied power, determine, with the known properties of the substrate, the minimum film area needed to achieve this. For resistors, this will also determine the film capacitance to the ground plane.

e) Determine the film dimensions and impedance matching structure needed to achieve the specified reflection or capacitance.

f) Perform design iterations as necessary to accommodate the many practical product constraints, e.g., overall chip size, space required for tab contact, need for a ceramic cover, film dimensional changes resulting from trimming operations, etc.

Due to our extensive background in thin-film materials and processes and the many advantages of thin-films in the areas of uniformity, reliability, and tight-tolerance capability, KYOCERA AVX has chosen this implementation for its initial group of resistive products. We will proceed with a discussion of design steps B through F above; the motive here is to acquaint the reader with some of the tradeoffs involved so that one can determine what is and is not achievable and what specifications may be important in operational use. Test methodologies will be discussed in separate sections.

AGING OF TANTALUM NITRIDE THIN FILMSOven AgingFigure 5 shows the average measured change in resistance of four groups of ten each Ta2N thin-film resistors placed in an oven – no applied power to the resistors – and aged for 1000 hours. The latter number of hours appears

to be a de facto industry specification, although the governing military spec, MIL-pRf-55342 calls out 2000 hours. Measurements were made at two different temperatures and were repeated on AlN supplied by different vendors (not shown), and on substrates from the same vendor but having different average surface roughnesses. In general, resistance change during aging, ∆R/R when expressed as a percentage of initial resistance, followed the formula predicted by theory,1

(1)

where t = timet0 = a characteristic time that depends on film material T = film temperatureT0 = a characteristic temperature of the material RS = sheet resistanceA = a constant dependent on the method of anodization n = exponent determined by temperature rangeThere are a few features to note about the plots and about Ta2N resistive films in general:• The aging mechanism due to heat is caused by oxidation of the film; the

oxide layer begins at the surface exposed to the air, deepens with time and temperature, and forms a tough protective barrier.

• Thinner films, i.e., ones with higher surface resistivities, age more quickly than thicker films, since a larger percentage of their thickness will oxidize.

• Surface roughness affects aging; the lower the roughness, the less the aging. Since polished substrates are more expensive than lapped or as-fired substrates, there is a cost-performance tradeoff.

• From the tests on substrates made by different manufacturers, it was found that unknown surface properties other than average roughness affect aging; different brands having identical surface roughnesses produced different aging. This may relate to the fundamental conduction mechanism postulated for Ta2N films: substrate-assisted tunneling – and properties such as grain size, grain agglomeration, and impurities.

20-40 microinch RA, 200ºC< 2 microinch RA, 200ºC20-40 microinch RA, 150ºC< 2 microinches RA, 150ºC

Time (hours)

Figure 5: Normalized percent resistance change of TaN oven-aged resistors





45

he question may now be asked, is aging under powered conditions the same as oven aging? We have already alluded to the possibility of an aging effect with applied DC voltage, but what about AC? The answer is that AC power aging and oven aging tests have shown that current flow in the resistor does not appear to contribute to the change of resistance other than by raising the temperature of the film through the dissipation of heat.

Aging with applied AC powerFigure 6 shows the average measured change in resistance of four 100-ohm, 60-Watt resistors selected at random from a production run and 60-cycle-AC power-aged for 907 hours. The test was done in accordance with MIL-PRF-55342, which requires power to be applied for 90-minute intervals alternating with power-off periods of 30 minutes – except that the Mil spec requires DC instead of AC. In order to magnify changes, sufficient power was applied to heat the resistive films to peak temperatures of about 190°C; this required about 100 watts, well in excess of the 60-watt maximum rating.The top curve shows the raw data; average resistance change was about 4.9%. The lower curve shows the data normalized to a 50-ohms/square resistivity, i.e., the resistance change was scaled by the ratio of actual film resistivity, 72 ohms/square, to 50 ohms/square using equation (1). Since the substrate used had an average surface roughness of 2040 microinches, the lower curve should be comparable to the 200°C oven-aged result for this substrate shown in Figure 5.The results are indeed close; oven aging (1000 hours, 200°C) produced a 3.4% change, AC power aging (907 hours, 190°C, peak) produced a 3.4% change. This good agreement, however, is somewhat misleading. In addition to the slightly different test times, there are uncertainties connected with the production resistors that make the exact comparison less accurate: (1) Their area-average temperatures were less than the peak temperatures; (2) their exact surface roughness had a range of 20 microinches; and 3) their widths were laser trimmed by amounts ranging from 0-20%.We can conclude this from the experiments: Both oven aging and AC power aging cause resistance to increase with time; if the respective average film temperatures are fairly close, the percentage resistance increases are likely also to be close. It should be noted that when the production resistors are operated at their maximum rated power of 60 watts, they will age much less than they did at the 100 watt level.

Figure 6: Percent resistance change of TaN resistorswith applied 60-cycle AC power

Figure 7: Percent resistance change of TaN resistors with applied DC power

RP32525T0100G Resistance change vs. Time.AC Power applied approx. 100 Watts; Max film temp approx. 190ºC

Time (hours)

RP32525T0100G Resistance change vs. TimeDC Power applied = 60 Watts; Max. film temp approx 137ºC

Aging with applied DC power

What now of aging effects due to the application of a DC voltage? Figure 7 shows the average measured change in resistance of three 100-ohm, 60-Watt resistors selected at random from a production run and DC power-aged – this time exactly in accordance with MIL-PRF-55342 – for 490 hours. The top curve shows the raw data; maximum resistance change was about -0.22%. The lower curve shows the data normalized to a 50-ohms/square resistivity, i.e., the resistance change was scaled by the ratio of actual film resistivity, 72 ohms/square, to 50 ohms/square using equation (1). The meaning of the scaling here is ambiguous, since resistance change is now seen to occur as a result of two separate effects: Heating – to which resistivity scaling applies by virtue of (1) – and a DC voltage sensitivity resulting from unknown causes. The latter phenomenon is common in thick films and is believed to result from an agglomeration of small conductive particles, under the application of a DC potential, into lower resistance larger particles. However, a corresponding thin-film mechanism does not seem to be reported in the available literature. Nevertheless, KYOCERA AVX has observed it experimentally on substrates from a number of different vendors and having a variety of surface roughnesses. The salient feature is that this effect causes resistance to decrease with time, whereas thermal effects cause it to increase. We can infer from Fig. 7 that the DC aging effect dominates for the first 170 hours, after which the thermal effect becomes significant. The fact that the two phenomena yield resistance departures in opposite directions helps to generate good results on the Mil spec test – although it must be cautioned that AC-only use could produce greater changes. Absent specific knowledge of customer use, KYOCERA AVX performs its standard aging test with DC applied per the Mil spec.





46

Figure 8: Chip termination showing heat flux

L

W

Tf

D Heat flow

ceramic chipresistive film

The basic formula for one-dimensional steady state heat flow is given as:

(2)

whereT = Temperature of film (°C)TA = Ambient temperature (°C)P = Power dissipated in film (Watts)D = Substrate thickness (meters)A = Area of film (square meters) k = Thermal conductivity (Watts/m°C)


FUNDAMENTAL ELECTRO-THERMAL PERFORMANCE LIMITATIONSPower handling vs. resistor capacitance-to-groundAssuming, from the aging tests, that the designer now knows the maximum film temperature allowable at full applied power, it must now be determined how to insure it is not exceeded -and what limitations it imposes on electrical performance. Figure 8 shows the heat flux in a chip termination. We begin with three simplifications to establish an elementary thermal model: (1) The heat is generated uniformly everywhere in the film; (2) the heat flow is one-dimensional – no spreading –from the film to the bottom of the chip, which is assumed at ambient (thermal ground); and (3) there is no convective or radiative heat flow. Concerning (1), we know that the currents in the film tend to be edge concentrated – much more so the lower the resistivity – and so there will be more heat generated at the edges than at the center. Nevertheless, we expect the approximation to be quite good for film geometries where the length and width are substantially greater than the substrate thickness and for the range of film resistivities typically encountered in RF applications. Additionally, we are not considering tapers, wherein the width of the film and hence the power dissipated at any cross-section may vary along its length. Concerning (2), it is understood that there is indeed thermal spreading, not only from the front face of the film -heat flow lines shown dotted in Figure 8 – but from the lateral edges as well. Thus, the second and third assumptions are thermally conservative – there will be additional heat paths beyond those accounted for – while the first will need further investigation since edge-located hot spots could develop at RF that would not be revealed in DC tests.

Let us consider a practical example: We will assume an ambient temperature, TA, of 50°C. We further assume a 40-mil chip thickness – for mechanical strength and substrate availability at moderate price – and seek to limit the maximum film temperature to 150°C. Using the thermal conductivity of AIN at 200°C (see Table 1), and setting P = 20 watts, we find from (2) that to limit T to l50°C max. (100°C above specified ambient) requires a film area of 2624 mils2. For P = 200 watts, the film area is 26,240 mils2.We next examine what conditions insure that our film behaves as a constant resistance through the highest operating frequency. As is well known, skin effect causes currents to decrease inside conductors, thereby increasing their effective resistance as frequency increases. For a flat plane conductor of finite thickness, D, it may be shown² that if the conductor thickness is 1/2 the skin depth, the conductor will have virtually the same resistance as its DC value. Skin depth (m.) is given by,

(3)

whereρ = resistivity of film (ohm-m.)

f = frequency in Hertz

µ = permittivity of film (henry/m.)As noted for thick-film implementations, Tf, the film thickness, is typically on the order of 0.5 mils. If we set δ = 2Tf = 1.0 mils = 2.54 x 10-5 m., we may solve (3) for p at the highest operating frequency, Fhi. Let us choose Fhi = 6.0 GHz. The result is that values of ρ ≥ 15.3 x 10-6 ohm-m. yield skin depths ≥ 1.0 mil.The low frequency resistance (ohms) of the film is given by,

(4)

whereL = film length (m.)W = film width (m.)Df = film thickness (m.)For a 0.5 mil thick square film, this corresponds to RL ≥ 1.5 ohms/square. Since film pastes are readily available in resistivity values ranging from 10 to 1000 ohms/sq., this does not pose severe limitations for most present applications. It may also be seen that thin-film implementations, which typically have film thicknesses ranging from 450-2250 Angstroms, will clearly not exhibit any significant skin effects up to much higher frequencies than thick films.In our example, we assumed a 40-mil thick substrate; we may now ask what would be the consequences if we’d chosen another value. Equation (2), after all, indicates that with thinner substrates the temperature rise would be less. The consequences are revealed, however, when we write the expression for (one dimensional, i.e., no electrical fringing fields) film capacitance to the ground plane:

(5)whereCg = Capacitance to ground plane in pF ε = relative dielectric constant

Thus, the thinner the substrate, the greater the film capacitance to ground. If we now solve (2) for P, the power dissipated in the film, and take the ratio of dissipated power to capacitance, we get

(6)




47

This tells us that, for a given temperature rise limit, ∆T, the ratio of dissipated power to capacitance is a constant, dependent only on two physical properties of the substrate material, and not on the substrate thickness or film area. Stated alternately, Power handling is directly proportional to capacitance to ground. Since, as will be shown below, capacitance fundamentally limits electrical performance, the quantity M = kε from (6) may be taken as a figure of merit of a substrate. Using the values of Table 1 at 200°C, MBeo = 22.4, MAIN = 13.9, and MBBO/MAIN = 1.6. Thus, beryllia would always be the substrate of choice over aluminum nitride – were it not for the former’s toxicity.Note that (6) may be re-written as:

Thus, the product of the chip's thermal resistance and electrical capacitance to ground is a constant inversely proportional to the substrate figure of merit.

Capacitance-to-ground vs. termination input reflectionWe may now examine the effect of capacitance on electrical performance. This is perhaps done most readily using a termination as an example. We begin by deriving an equivalent circuit for a shorted section of lossy line. This given by,

(7)

C

P

=g 8.85 kε

ΔT

RTH ,

RTH =here the thermal resistance,w

ε

(8a)

(8b)

(8c)

R, L, G, and C are respectively the resistance, inductance, conductance, and capacitance per unit length; w is the angular frequency = 2πf. For a low-loss substrate such as AlN, G can generally be neglected compared to wC. To obtain a lumped equivalent circuit for the shorted transmission line, we use a power series expansion for coth x = 1/x + x/3 - x3/45 +... , where |x| < π. Then, taking the first two terms of the series, (8a) becomes:

(9)

We recognize this as the admittance of the circuit shown in Figure 9. The inductance and capacitance both impose limits on how well matched we can make the termination over a given bandwidth.

In the late 1940s, H.W. Bode considered the problem of impedance matching two-element RC or RL loads.3 Bode's work was extended and generalized by Fano4 in 1950; Fano presented the limitations on impedance matching any load over an angular frequency range, wa to wb. However, for illustrative purposes, let us consider the case analyzed by Bode, i.e., where the inductive reactance is so much less than the value of the resistance at the highest frequency of interest that we can neglect the inductance altogether. For further simplicity, we take the lower frequency as zero (DC). Then, applying Bode's formula to the circuit of Fig. 9, the best possible results are limited as indicated by

Figure 9: Low frequency lumped equivalent circuit for short-circuited lossy line

(10)

Or, in words, the area under the curve of vs. w can be no greater than

Substituting from (6),

(11)Equation (11) describes the best tradeoff that can be achieved between power handling and area under the curve of In|1/Γ| vs. w. For a given permissible film temperature rise: The higher the applied power, the less the area under the curve. If |Γ| is assumed constant over the band,

(12)= e -0.169 Tk

fbRoP

from DC through fb, and unity everywhere else.It is seen that: (a) The higher the (applied) power-bandwidth product, the higher the minimum achievable reflection for a given film temperature rise; and (b) The higher the figure of substrate merit M = k/ε, the lower the reflection magnitude.Note that (12) is a theoretical result that can be achieved only with an





48

infinite number of matching elements. Real-world chips are subject to many additional limitations including (but not limited to) having: (a) space for only one or at most two matching elements; (b) inductances non-negligible compared to the terminating resistance; (c) lengths that are not electrically short at operating frequencies; (d) tolerances on dielectric constant, thermal conductivity, and physical dimensions of matching elements; (e) film dimensions that require trimming to bring them into resistance specification; and (f) protective cover films and ceramic lids that add parasitic reactances. Thus, the reflection magnitude over a given frequency band will be substantially higher than indicated by (12), but the qualitative dependencies still apply.

POWER RATING: DEFINITION AND CONFIRMATIONBefore we can do a thermal design, we must first decide on exactly what we shall mean by “power rating” for a chip device. Figure 10 illustrates the heat flow around a mounted chip resistor. The resistive film, assumed to have constant power dissipation over its surface, behaves as an isoflux boundary, i.e., a source of uniform heat flux, rather than the isothermal boundary used in the derivation of equation (2). Were the film to completely cover the chip, the isoflux case would approach the isothermal case, but absent that condition the heat spreads out as shown.The thermal resistance between two points is defined as the temperature difference between those points divided by the heat flow (typical units are degrees Centigrade/Watt). It is analogous to electrical resistance, with temperature corresponding to voltage and heat flux to current. Figure 10 indicates that there is vertical as well as lateral heat flow in both the ceramic chip and the carrier it is mounted on. This implies that the system must be represented as a lattice network of thermal resistances rather than a single thermal resistance.

Heatflow

ceramic chip

resistive film

carrier

Figure 10. Heat flow around a mounted chip resistor

(The latter can characterize only the kind of one-dimensional heat flow assumed for equation (2).) Stated alternately, the temperature will vary laterally along the film and, also, laterally along the mounting surface. This is illustrated in Figure 11, which was made using a “Finite Element Method” (FEM) computer simulation. In actuality, a three-dimensional latticework of resistors is needed to describe a mounted resistive chip, and there is temperature variation along all three dimensions.


The above considerations bear importantly on how a chip is designed and characterized for power handling and exactly how confirming measurements are made. Figure 12 indicates temperatures at a number of points on and around a mounted chip: (a) T0, at the film centroid; (b) T1, at the film edge or corner; (c) T3, on the mounting surface directly under the film centroid; and (d) T2, on the mounting surface 30 mils away from the chip edge. We can make the following qualitative observations:

• Thermal aging will likely depend on the area-averaged temperature over the film. The peak temperature has no particular significance – unless it is sufficiently extreme to cause catastrophic failure.

• T0 is the temperature at the nominally hottest point on a film disposed symmetrically on a chip – which is the case for resistors, but not terminations. The actual (as opposed to nominal) hottest film point may be at a fault location – where the film was laser-trimmed, where there was a thin spot or substrate pull-out, at the interface to the conductive contact – and can only be determined experimentally.

• Instruments without sufficient resolution, e.g., a thermal camera with a 30-mil diameter spot size, may not be able to accurately measure T0 or any other hot spot, especially on large films where the temperature is changing rapidly across the surface.

Figure 11: Computer simulation of isotherms around mounted chip resistor

Figure 12: Temperatures at a number of points on and around a ground plane-mounted resistive chip

Tem

pera

ture

(ºC)

T0

T2 , temperature atthermocouple

locationFilm

AlNSolder

Flange orcarrier

ThermalGrease

Heat Sink

T3

Mountinghole

30 mils

T1




49

An ideal heat sink has infinite thermal conductivity and, because of this, the infinite thermal conductivity, T2 would equal T3 in Fig. 12. From Fig. 10 and Fig. 11, this clearly is not the case for any real mounting surface; in fact, T3 > T2.One strategy for defining power rating might be to measure T3 directly – or deduce it from a measurement of T2 and a computer FEM model – and then specify performance as if an ideal heat sink were held everywhere at that temperature. By slicing a mounted resistor in half along its longitudinal axis – in Figure 12, perpendicular to the plane of the paper, down the centerline – we were able to take advantage of the lateral heat-flow symmetry to measure T2 and T3 for chips of several sizes and input powers. (The slice plane is an adiabatic boundary, i.e., no heat flows across it.) Results of such measurements are presented in Table 2. All chips were 40 mils thick and all measurements were made on a silver-plated high-conductivity copper mounting surface (see the table for more information).

TABLE 2:Temperature difference between two points on mounting

surface of sliced resistive chips

Chip Film Power Applied (Watts)

T3 – T2 (°C)Length

(mils)Width (mils)

Length (mils)

Width (mils)

200 100 146 84 30 5.7

250 250 196 112 60 12.9

375 250 321 184 150 15.3

Although measurements of the type made above can be performed in a laboratory environment, this approach is not practical for mass-production testing. Thermal modeling presents an equal number of practical problems, not the least of which is the considerable uncertainty in the material constants (thermal conductivity of AlN, solder, heat sink) for any particular mounted chip. Further, in either case – and perhaps most importantly – the results would be difficult, tedious, or impossible for end-users to confirm; in most cases, they would have to “take our word for it,” hardly an enviable position. Instead, KYOCERA AVX has decided on a set of defined measurement conditions that are readily reproducible and that yield verifiable results. The resulting power rating, of course, is lower than it would be on an ideal heat sink.

How we specify power rating• First, we must define the chip mounting conditions: Our tests are

conducted on large (1.2-inch x 1.05-inch, 0.188-inch thick) silver plated C110 copper alloy carriers.

• Next, since our carrier does not have infinite thermal conductivity, we must specify the exact location – T2 in Figure 12 – at which we hold the ambient temperature constant. Typically, we choose this as 30 mils from the chip edge along its lateral centerline – an arbitrary, convenient spot at which to solder a small thermocouple.

• Finally, we specify the measuring instrument: Temperature measurements are made with a contacting fiber-optic thermometer – Luxtron Model 790 – that does not depend on emissivity for accuracy and that has a measurement spot size on the order of 10 mils. in diameter.

Having specified the measurement conditions we are now ready to declare how we establish the power rating of a given device:With rated power applied and location T2 on the standard carrier held at a specified ambient temperature, two conditions shall be met: (1) The first, termed “power handling,” is that maximum film temperature shall not exceed a specified value; (2) The second, termed “life,” is that the film resistance change no more than a specified percentage during and after a 1000-hour burn-in per Mil-PRF-55342. Typical values of parameters are: ambient temperature = 100°C; maximum spot film temperature = 170°C; percentage resistance change ≤ 0.2%.Having at last come to a definition of power rating, actual designs can now

be implemented.

THE DESIGN PROCESSResistorsThe design process for resistors is relatively straightforward. Various chip sizes have become standardized in the industry, e.g., 0.200" x 0.100", 0.250" x 0.250", etc. Chip thicknesses have become equally standardized; the three most common are 25, 40, and 60 mils. Contact lengths are determined by mechanical constraints: exposed bonding areas – leaving room for film coating overlap – needed to insure that tabs have sufficient pull strength. In general, contact widths should be about the same as the film width; the contacts are parasitic, that is, they contribute to capacitance (and inductance) without dissipating any heat. With the length of the film now determined – chip length minus contact length – the width is chosen to yield an area in accordance with the peak temperature and aging requirements.There is, however, one complication: Be the implementation thick-film or thin-film, there is always a spread of resistance values about any given nominal target. In thin-film, a total spread might be 15%, i.e., if a target resistance were 100 ohms, actual resistor values might vary from 85 to 100 ohms. For safety in design, a spread of 20% is typically allowed. Since resistors are often sold to ± 2% or tighter tolerances, in general, trimming will always be required. While low-power resistors are often trimmed by cutting notches perpendicular to the length dimension, current concentrations along the edges of such notches can result in local hot-spots. The result would be burn-out at high power RF inputs. Instead, KYOCERA AVX laser-trims resistors by narrowing the width dimension symmetrically and uniformly along the length. Thus, any design must accommodate width dimensions that vary over a 20% range; i.e., a resistor trimmed to the maximum extent must still meet all thermal and electrical requirements.In order of increasing accuracy (and decreasing convenience), film temperatures can be estimated by: equation (2) herein (no spreading); any one of several formulas available in the literature that include spreading; or an FEM computer program. The term “constriction resistance” is used to describe that component of thermal resistance over and above what would be produced by purely one-dimensional heat flow.Let us assume a perfectly conducting mounting surface in Figure 10, i.e., a surface along which there can be no lateral temperature variation. Then to calculate the total thermal resistance from the film to the mounting surface, one would compute the one-dimensional resistance of the chip with the film occupying its entire surface and then add the constriction resistance to account for the lateral constriction of the heatflow. (Note, from the top down the heat spreads and so the term “spreading resistance” is frequently used, but from the bottom up the heat flow constricts.) There are several expressions available in the literature for the constriction resistance of heat sources mounted on rectangular channels (“flux tubes”) with adiabatic walls, i.e., heat-producing films on chips that have no appreciable heat conduction perpendicular to their sidewalls. One formula that yields constriction resistance based on an average film temperature is5.

ψ= 0.475 – 0.62 + 0.13ε3 (13)

Where, a dimensionless spreading resistanceRc = spreading resistance

k = thermal conductivity Af = area of filmε = square root of ratio of film area to chip area

The problem with any of the above methodologies is that it is quite difficult to accurately match experimental results with their predictions. The principal reasons are uncertainties in the experimental data: the exact thermal conductivity of the particular substrate being measured and its variation with temperature, the exact thermal conductivity of the carrier, the integrity of the solder joint between chip and carrier (see more about this later), the exact positions of temperature measuring devices, etc. Thus, insofar as initial





50

design efforts, methodologies beyond one-dimensional calculations are of marginal utility. Of course, other insights that they provide, both qualitative and quantitative, as well as tolerance study capabilities, may justify the extra time and effort.Capacitance to ground can be calculated, again in order of increasing accuracy, using: (5) herein (no fringing); formulas available in the literature for microstrip impedance (includes electric field fringing, but not substrate truncation); or an Electromagnetic (EM) analysis program such as Sonnet or Eagleware. The second alternative deserves some elaboration. The standard formulas for the impedance of microstrip line assume an infinitely wide substrate. A resistive chip, however, is fabricated as a substrate that is truncated at a certain distance from the edge of the trace. Thus, standard microstrip impedance formulas could be in considerable error for resistive films whose lateral edges approach the edges of the substrate. In general, if the trace-edge-to-substrate-edge is greater than half the trace width, impedance values will be affected by < 0.5%.6 Standard formulas for microstrip characteristic impedance, Z0M, and group velocity, ν, are widely available. The total capacitance to ground of the chip is then given by

(14)


where l = length of film lc = length of contact (assumed same width as film)

The equivalent circuit for a resistor may be derived by considering it as a length of lossy line. The admittance matrix for such a section is given by7

(15)

(16)

(17)

(18)

The pi-equivalent is shown in Figure 13a; when the electrical length, γl, becomes short and the approximations tanh γl = sinh γl = γl apply, the series impedance is given by

while the shunt impedances are given by

The equivalent circuit then becomes that shown in Figure 13b. (We neglect, as earlier, G compared to wC.) Note that the circuit contains both inductance and capacitance parasitics, though most vendors electrically characterize a chip resistor only by the latter. C1' is then given by half the value calculated in (14), while L1' is given by

Note that to calculate the thermal and electrical effects of a protective coating and/or ceramic cover, only an FEM thermal program and an EM electrical program can do the job.

TerminationsTermination design begins analogously to resistor design – input contact length and edge-wrap-to-ground length must first be subtracted from the chip length to determine the available working space. But the latter now has two required functions: to support a means of heat dissipation (i.e., resistive film) and to support an impedance-matching network. The resistive film must then meet the following criteria:

(1) Satisfy the peak temperature and aging requirements

(2) Have an input impedance that can be readily matched by a simple one- or two-reactance network

(3) Leave sufficient room for implementation of the matching network

Z0 sinh ( l)

Z0tanh ( l/2)

Z0tanh ( l/2)

)2( Cll

RR0' =LL1' =C2

C1' =

R0'L1'

C1' C1')2( Cll

l

g

g g

+

+

Figure 13a: Pi-equivalent circuit of lossy line

Figure 13b: Equivalent circuit of chipresistor

The interplay among (a), (b), and (c) above must usually be done utilizing a number of iterative back-and-forth trials with both thermal and electrical CAD programs. The chip layout – a truncated dielectric, protective coating, and (in some cases) ceramic cover – containing matching elements that couple to each other and have large discontinuities, gives rise to impedances that cannot be accurately modeled with circuit-based programs (e.g., Touchstone) alone. Similarly, the thermal behavior of the non-centered film plus wraparound cannot be accurately described by closed-form spreading equations (e.g., (13) herein). Therefore, CAD suites must be used for both aspects of design.Typically, the length-to-width (aspect) ratio of the film is chosen so that its input impedance can be incorporated into a low-pass filter structure. Figure 14 shows the equivalent circuit of a film plus matching network. The element immediately preceding the film, L2, is an inductor, generally realized by an electrically short (but often physically meandered) length of narrow (high-impedance) line. (Note that a strength of thin-film implementation is that the tolerance on the line width, and hence its impedance, can be controlled very tightly; the result is an improved VSWR yield compared to a thick-film design.) The input element, C2, which incorporates the contact, is a shunt capacitor.

R0L1

Cg

L2

C2

Figure 14: Equivalent circuit for matched termination




51

Figure 15: Physical layout of 60-Watt terminationFigure 16: VSWR of 60-Watt termination

Figure 17: Thermal scans of 60-watt termination

Wraparound

Resistive film

Conductive film

As with resistors, any design must accommodate a film width variation of 20%, as well as the specified range of AlN dielectric constant, which typically varies from 8.7 to 9.3. These two factors, plus variation of all physical dimensions and substrate and cover dielectric constants all affect production yield to a given VSWR. Figure 15 shows the physical layout of a 60- watt chip termination; Figure 16 shows typical VSWR-vs.- frequency plots of 60-watt terminations randomly selected from a production

run. Figure 17 shows thermal scans made using an IR camera with the termination at full rated power and the mounting surface temperature at 100°C, when measured at a point 30 mils from the termination edge (as described in the section herein titled, How we specify power rating).

Temps of film area outlined

Max 136.4°CAvg. 128.5°CMin. 114.1°CStd. Dev. 4.4°C





52

It was discussed under (10) and (11) that the area under the

vs. frequency curve is a constant. Thus, better match at any particular frequency is always achieved at the expense of match at another frequency. If a termination VSWR is specified from DC to an upper frequency value, as is typical practice, optimum designs are mismatched at DC so that improved match can be achieved across the entire band. KYOCERA AVX follows this design practice, so users should be aware that, for instance, a DC measurement of a 50- ohm termination will not necessarily be exactly 50 ohms.

How we measure reflectionIt was alluded to earlier that reflection measurements are subject to a number of vagueries that include not only the interface to the measuring equipment – test board thicker or thinner than termination substrate, trace wider or narrower than the termination tab, board dielectric constant – but also the details of the measurement technique. KYOCERA AVX measures termination reflection under the following conditions:• Test substrate is Rogers Corp. TMM3, dielectric constant = 3.27• Board thickness = chip substrate thickness = 40 mils, nominal• Board trace width = 92 mils (for Z0 = 50 ohm line)• Measuring instrument is an Agilent 8722D Vector Network analyzer with

a 4-receiver architecture• Measurement is done using standard TRL de-embedding to remove the

effects of connectors and source-load-UUT mismatch interactions• Termination front surface is butted against TMM test board, no strain

relief in tab• Tab length = 90 mils.

VIA PATCHES FOR SURFACE-MOUNT COMPONENTSAs shown in Figure 3b, surface mount (SMT) parts are typically soldered to a via patch in order to transfer the heat generated in the resistive film to a ground plane/heat sink. The question of how to rate an SMT part for power handling is thus intimately connected with the via patch it is to be mounted on. Among the variables in via patch design are board thickness, and via hole diameter, via hole spacing, via hole pattern, via hole plating, and via hole solder filling. Each end-user will typically have its own preferred set of the above parameters. In an effort to characterize SMT device performance, KYOCERA AVX has adopted a standard via patch design and test methodology that provides sufficient information for end-users to calculate behavior in their own operating environments. The design assumptions and parameters of KYOCERA AVX's standard via patches are presented on the right.PC board: Rogers Corp. 4350; 30 mils thick; 1/2-oz. (7 mils thick) copper cladding.Via holes: See Figure 18. Structure – plated through with 2-mil copper, filled with Sn63 solder; Diameter =16 mils; edge-to-edge spacing = 0.5 x diameter = 8 mils.

Hole Dia 0.41 (0.016)thick_Cu_Plate 0.05 (0.002)kth_sub 0.02 W/(in ºC)thick_sub 0.76 (0.030)k_sol 1.290 W/(in ºC)

thick_sol 0.05 (0.002)kth_cu 9.9 W/(in ºC)thick_Cu_foil 0.02 (0.0007)theta_1via_hole 35.1ºC/Watt

mm (inches)

Cu PLATING

Cu CARRIER

SOLDER

CROSS SECTION OF TYPICAL VIA HOLE

ASSUMPTIONS

CHIP RES. OR TERM.

Cu FOILON SUBSTRATE

SOLDER-FILLEDPLATED-THRU HOLE

Figure 18: Via-hole cross section and parameters

Figure 19: Rectangular and Triangular via arrays

The calculated thermal resistance of each via, with the assumptions above, is 35°C/Watt. Table 3 and Table 4 present calculated performance parameters of KYOCERA AVX's standard via patches for various sizes of RP4-style SMT chip resistors and RP9-style SMT chip terminations (see Figure 4 for style diagrams).

Rectangular via array Triangular via array


Notes – The minimum via hole diameter is generally a function of board thickness and is related to “walking” or breaking of the drill bit. The maximum via hole diameter relates to the ability to wick up solder to the via's full length. Different PC board fabricators will have different design rules that apply.Pattern: Rectangular array. Notes – There are two possible uniform patterns, designated Rectangular Array and Triangular Array respectively, and shown in Figure 19. For optimum design, it must be determined which pattern places the most via holes under a chip. This consideration can become fairly complex, since vias that are even partially under a chip can still contribute significantly to heat conduction. Although details are beyond the scope of this discussion, KYOCERA AVX has developed some useful algorithms to aid in optimum via-patch design; customer assistance is available from the factory. For most – but not all – situations, the rectangular array yields better results than its triangular counterpart.

Table 3: Calculated Via-Patch Performance for RP9-Style Terminations Assumptions:

1. No lateral heat transfer on surface.2. Board is solder attached to an ideal heat sink.3. Thermal resistance of each via is 35°C/Watt

Table 4: Calculated Via-Patch Performance for RP4-Style Resistors

Assumptions:1. No lateral heat transfer on surface of board.2. Board is solder attached to an ideal heat sink.3. Thermal resistance of each via is 35°C/Watt

mm (inches)

mm (inches)

Chip Type RP9

Size (L X W)


Number of Vias

Thermal Resistance

of Board (°C/Watt)


board at rated Power (°C)

5.08 x 2.54 (0.200 x 0.100) 10 30 1.17 11.76.35 x 6.35 (0.250 x 0.250) 20 88 0.40 8.09.53 x 6.35 (0.375 x 0.250) 30 132 0.27 8.19.53 x 9.53(0.375 x 0.375) 40 204 0.17 6.9

Chip Type RP4

Size (L X W)


Number of Vias

Thermal Resistance

of Board (°C/Watt)


board at rated Power (°C)

5.08 x 2.54 (0.200 x 0.100) 10 20 1.75 17.56.35 x 6.35 (0.250 x 0.250) 20 48 0.73 14.69.53 x 6.35 (0.375 x 0.250) 30 96 0.36 10.89.53 x 9.53(0.375 x 0.375) 40 144 0.24 9.7




53

Figure 20: Temperatures at a number of points on and around a flange- or surface-mounted resistive chip

An example of via patch tests were those run on four RP4 2010 resistor chips. The chips were first mounted directly on modified standard large copper carriers. (The chips actually sat atop a small ridge so that their bottom sides would not be short circuited.) Referring to Figure 12, with carrier temperature T2 at 100°C, 10 Watts DC was applied to the chip, and the resultant peak film temperature rise, T0 – T2, was measured at 15.4°C (average for the 4 chips). Thus, the chip peak thermal resistance measured as 15.4/10 = 1.54°C/Watt. Next, the same type chips were mounted on a standard (as designed above) via patch board – see Figure 20 – which was soldered to a carrier. With T2 – now measured on the via patch – held at 100°C, the peak film temperature rise was 34.7°C.A second experiment was done in which, with the via patch in place, the carrier temperature T4 directly under point T2 was held at 100°C. The measured resultant T0 – T2 was 34.5°C. We can compare this to the predicted value by adding the chip thermal resistance, 1.54°C/Watt, to the via thermal

T0

T2 , thermocouplelocation, via patch

FilmAlN

Solder

Flange, carrier,or via patch

ThermalGrease (flange)

Heat Sink

T3

Mounting hole

30 mils

T4 , thermocouplelocation, chip & flange

resistance (from Table 4), 1.75°C/Watt, and multiplying by 10 Watts. The result, 32.9°C, compares reasonably well with the measurement.

How we specify power rating on SMT partsThe power rating of an SMTpart, mounted on the standard via patch, is specified in the same way as for nonsurface mounted parts – see herein under How we specify power rating – except that location T2, the point held at the specified ambient temperature, is on the surface of the via patch.Note that we could have equally well required T2 to be on the carrier instead of atop the via patch, but the latter location seems more practical, in that it is a point users can readily measure and control through their own heat sink and via patch design.

FLANGE MOUNTED PARTSThe power rating of flange mounted chips presents problems similar to those of SMT chips. In general, flanges are not particularly good conveyers of film-generated heat to the mounting surface. The interface is characterized by several factors:a) Intimate contact occurs at discrete parts of the nominal interfaceb) A very thin gap exists in the regions where there is no intimate contact,

and is usually occupied by a third substance, e.g. air, other gasses, grease, or other material

c) Heat transfer can take place by conduction through the real contact area, by conduction through the substance in the gap, and by radiation across the gap.

The actual thermal resistance of an interface depends on surface roughness, waviness and slope of the contacting peaks; thickness of the non-contact region; type of interstitial fluid (gas, liquid, grease, vacuum); interstitial gas pressure; thermal conductivities of the contacting solids and interstitial substance; hardness or flow pressure of the contacting peaks (plastic deformation of the highest peaks of the softer solid); modulus of elasticity of the contacting solids (elastic deformation of the wavy parts of the interface); and average temperature of the interface (radiation and property effects). Thus, thermal contact resistance is an extremely complex


problem – which makes characterization and measurement of products whose performance depends on such an interface equally complex.Using pressure-sensitive indicating tape, KYOCERA AVX has determined that for a flange that is simply bolted to a mounting surface there is reliable contact only over the area of the mounting hole plus a small surrounding annulus. Thus, a substantial portion of the heat generated by the chip proceeds in a lateral direction through the flange until it gets to the vicinity of the mounting hole, whence it is redirected vertically through the mounting bolt to the heat sink. Thermal grease does permit vertical heat flow over the entire flange, but even the best thermal greases have thermal conductivities far less than metals and are messy to apply and remove. If using thermal grease, it is important to control the average thickness; this is best done by controlling the volume and using a spatula or roller to evenly distribute it over the flange surface area. A maximum 2-mil thickness of grease is recommended.

One-hole flange

An example of flanged-part tests were those run on four RP60515 resistors. When chips of the type used for this part are soldered directly on standard large silver-plated copper carriers (surface finish after plating = 10-15 pin., avg.) and T4 (see Figure 20) is held at 100°C, the peak film temperature rise, T0 - T4, is typically 35.6°C at the rated 45-watt input power. When the same type chips are mounted on singlehole flanges, bolted down – without thermal grease – to the carriers at the recommended torque, the carrier (point T4, Fig. 20) held at 100°C, and the same 45-watts input power applied, the peak film temperature rise increases to 70°C.When an AlN-based thermal grease (AiT COOL-GREASE™ CGR 7018) was applied such that an approximately 2-mil thickness resulted between the flange and mounting surface and the above test was repeated, the peak film temperature rise was only 49°C.

Two-hole flangeAn example of two-hole flange tests were those run on four RP60870 resistors. When chips of the type used for this part are soldered directly on standard large silver-plated copper carriers (surface finish after plating = 10-15 pin., avg.) and T4 (see Figure 20) is held at 100°C, the peak film temperature rise, T0 – T4, is typically 66°C at the rated 150-watt input power. When similar chips are mounted on two-hole flanges, bolted down – without thermal grease – to the carriers at the recommended torque, and the carrier (point T4) held at 100°C, a 66°C temperature rise occurs for an applied power of only 106 watts. (Note that to measure the carrier temperature, a small hole was drilled in the flange at the T2-T4 location and the Luxtron fiber optic probe inserted in the hole until it contacted the carrier.)When an AlN-based thermal grease (AiT COOL-GREASE™ CGR 7018) was applied such that an approximately 2-mil thickness resulted between the flange and mounting surface and the above test was repeated, the 66°C peak film temperature rise occurred at an applied power of 120 watts.How we specify power rating of flange-mounted devicesThe power rating of a flanged part is specified in the same way as for chips – see herein under How we specify power rating. Location T4, the point held at the specified ambient temperature, is on the surface of the carrier. Note that some vendors specify ambient temperature as T2 on the top surface of the flange instead of T4 on the carrier or heat sink. This will produce an apparently higher power rating, since the thermal drop through the flange is not accounted for in the measurement. KYOCERA AVX believes that end users can most readily control the temperature of the flange mounting surface rather than the flange top surface, and thus we specify the power capacity appropriately.




54


SOME RECOMMENDATIONS ON SOLDERINGWhen mounting chips, the solder interface to the mounting surface has a crucial bearing on performance. Even with careful soldering technique, voids (porosity) and de-wetting are difficult to avoid. Using Scanning Acoustic Microscopy (SAM), radiographic analysis, and metallographic sectioning, KYOCERA AVX has studied solder joints made with a variety of techniques. One result is that, where typical surface mount assembly techniques are used, such as those involving solder paste, porosity levels of 10-25% should be expected. Note that this directly transfers to the power rating of the part, i.e., its power handling capability will decrease in approximately the same proportion.Here are some suggestions to improve solder joint integrity:Avoid the use of hold-down clamps or springs. Loading the solder in compression during melting forces it out of the bond area and does not permit the “Z” direction movement required during solidification to reduce shrinkage porosity. Further, the thermal mass of the hold-down fixture may cause a lag in temperature, resulting in a cooler part and loss of solder in the bond area when the chip eventually reaches the correct temperature.Avoid introducing solder to the entire bond area prior to soldering, i.e., do not use a solder pre-form the same size as the entire resistor chip or pre-tin the entire chip bottom. Porosity reduction is enhanced by permitting the solder to wick through the joint area by capillary action, preferably from a central location.Reduce the soldering time (temperature above solder melting point) to 20-30 seconds maximum in order to avoid scavenging of the silver plating, intermetallic formations, solder melting point alteration, etc.Reasonably good results have been achieved at KYOCERA AVX using lengths of solid Sn96 (Sn96.5/Ag3.5) wire, about 0.030 inches in diameter, placed in the center of the chip, with RMA flux applied to both chip and mounting surface. This process has been shown to result in porosity levels of 8-12%; optimized solder volumes may yield even better results.

CONCLUSIONSBoth vendors and end-users of high-power microwave resistive chip products are frequently guilty of a lack of rigor in specification. A likely reason is that many of these products see use only during fault conditions. After all, apart from microwave ovens and dryers, no one wants to spend a great deal of time turning microwaves into heat. Thus, unlike transistors, capacitors, or inductors, resistive parts that underperform (or even fail) may go undetected without catastrophic results – much of the time. However, by understanding actual measurement conditions and fundamental physical constraints, users can often save the added cost of an overdesigned part as well as insure themselves of a more reliable product during those crucial intervals when it is in use.

References4 R. Wayne Johnson, Ed., Modular Series in Hybrid Microelectronics, ISHM,

Reston, Va., 19915 S. Ramo and J. Whinnery, Fields and Waves in Modern Radio, John Wiley &

Sons, Inc., New York, 1953, pp. 251-2536 H. W. Bode, Network Analysis and Feedback Amplifier Design, Sec. 16.3,

New York, Van Nostrand, 19457 R.M. Fano, “Theoretical Limitations on the Broadband Matching of

Arbitrary Impedances,” Journal of the Franklin Institute, Vol. 249, pp. 57-84 and 139-154 (Jan.-Feb. 1950)

8 K.J. Negus, et al., “On the Nondimensionalization of Constriction Resistance for Semi-infinite Heat Flux Tubes,” Transactions of the ASME, Vol. 111, August 1989, pp 804-807.

9 Smith, Charles E., and Ray-Sun Chang, “Microstrip Transmission Line with Finite-Width Dielectric and Ground Plane,” IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-33, No. 9, September 1985, pp. 835-839

10 G. L. Matthei, L. Young, E.M.T. Jones, Microwave Filters, Impedance-matching Networks, and Coupling Structures, McGraw Hill, New York, 1964, pp 30




North AmericaTel: +1 864-967-2150

Central AmericaTel: +55 11-46881960

AsiaTel: +65 6286-7555

JapanTel: +81 740-321250

EuropeTel: +44 1276-697000

visit us at www.kyocera-avx.com

FOLLOW US:

www.kyocera-avx.com

https://www.instagram.com/avxcorp/?hl=en

https://www.linkedin.com/company/avxcorp/

https://twitter.com/AVXCorp?ref_src=twsrc%5Egoogle%7Ctwcamp%5Eserp%7Ctwgr%5Eauthor

https://www.youtube.com/user/AVXCorporation

https://www.facebook.com/avxcorp/

high power resistive products - avx corporation

Documents