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Henri I. Boudinov Instituto de Fsica, Universidade Federal do Rio Grande do Sul Porto Alegre, RS, Brazil henry@if.ufrgs.br 26_10_2009NanoSYD, MCI, SDU, Snderborg, Denmark Ion Beam Analysis Part 1

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The Porto Alegre Ion Beam Centre Interaction of ions with matter Stopping power Rutherford Backskattering Spectrometry (RBS) Channeling Compositional and defect depth profiles Proton Induced X-ray emission (PIXE) Nuclear Reaction Analysis (NRA) Microbeam analysis Outline

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Porto Alegre Ion Beam Centre established in 1981 Controllable Materials Modification Controllable Materials Modification FacilitiesFacilities 0.2-3MV Tandetron 0.2-3MV Tandetron 30-500kV Single Ended Implanter 30-500kV Single Ended Implanter 10-250kV Medium Current Implanter 10-250kV Medium Current Implanter Implantation 10keV ~15MeV (up to 1mA) Implantation 10keV ~15MeV (up to 1mA) Sample size up to 10cmx10cm Sample size up to 10cmx10cm Hot (800 o C) or cold (~LN) Hot (800 o C) or cold (~LN) ApplicationsApplications Ion Beam Synthesis Ion Beam Synthesis Buried and surface oxides and silicidesBuried and surface oxides and silicides NanocristalsNanocristals Ion Implantation Ion Implantation Defect Engineering Defect Engineering Proton beam lithography Proton beam lithography potentially 1 m resolution to 10 m depthspotentially 1 m resolution to 10 m depths

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Advanced Materials Analysis Advanced Materials Analysis FacilitiesFacilities 3MV Tandem 3MV Tandem Techniques include RBS, MEIS, ERDA, PIXE, NRA Techniques include RBS, MEIS, ERDA, PIXE, NRA Channelling Spectroscopy for damage analysis Channelling Spectroscopy for damage analysis Fully automated collection and analysis Fully automated collection and analysis Micro-beam with full scanning Micro-beam with full scanning External Beam for vacuum sensitive samples External Beam for vacuum sensitive samples ApplicationsApplications Thin Film Depth Profiling Thin Film Depth Profiling Compositional Analysis Compositional Analysis Disorder Profiling of Crystals Disorder Profiling of Crystals 3-D elemental composition and mapping 3-D elemental composition and mapping Porto Alegre Ion Beam Centre

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Ion Beam Modification of Materials Ion Beam Modification of Materials Ion Beam Analyses Ion Beam Analyses Basic Physics Basic Physics Ion Beam for: Material ScienceMaterial Science Solid State PhysicsSolid State Physics Atomic and Molecular PhysicsAtomic and Molecular Physics

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Charged Particles Charged Particles Electrons: e -, e +, -, + 10 m Electrons: e -, e +, -, + 10 m Ions: p +, He ++ ( ), etc.. 1 m Ions: p +, He ++ ( ), etc.. 1 m Uncharged Particles Uncharged Particles X-rays and -rays 10cm X-rays and -rays 10cm neutrons10cm neutrons10cm Penetration of the Radiations in Solids

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Ion Implanter

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3MV Tandetron accelerator

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E. Rutherford, 1911 N.Bohr, 1913-54, 1948 E. Fermi, 1924- H.A. Bethe, 1930- F. Bloch, 1933- L. Landau, 1944-.... Penetration of charged particles through matter Experimental ingredients Ions : Z1=-1,1,2,...~100, electrons, muons, clusters,... energies ~1eV 10 11 eV Target : Z2 = 1,2,.. ~100, solids, gases, liquids, plasma,...

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Bohr, Bethe,...

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Stopping Power dE/dx = N.S dE/dx energy loss [eV/nm] N atomic density [nm -3 ] S stopping power [eV.nm 2 ]

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dE/dx : two types

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v ion

Electronic Energy loss (high energies) Classical theory dE/dx ~Z 1 2 ln (|Z 1 |) for Z 1 /v >> 1 Quantum theory dE/dx ~Z 1 2 First-order : for Z 1 /v