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500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
1
Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
General Description
The AP2213 is a 500mA output current fixed voltageregulator which provides low noise, very low dropoutvoltage (typically 350mV at 500mA), very lowstandby current (1μA maximum) and excellent powersupply ripple rejection (PSRR 75dB at 100Hz) in bat-tery powered applications, such as handsets and PDAsand in noise sensitive applications, such as RF elec-tronics.
The AP2213 features individual logic compatibleenable/shutdown control inputs, a low power shut-down mode for extended battery life, over current pro-tection, over temperature protection, as well asreversed-battery protection.
The AP2213 has 2.5V, 3.0V and 3.3V versions.
The AP2213 is available in TO-252-2 (1), TO-252-2(3), SOIC-8 and SOT-223 packages.
Features
· Up to 500mA Output Current · Low Standby Current· Low Dropout Voltage: VDROP=350mV at 500mA· High Output Accuracy: ±1%· Good Ripple Rejection Ability: 75dB at 100Hz
and IOUT=100μA· Tight Load and Line Regulation· Low Temperature Coefficient· Over Current Protection· Thermal Protection· Reversed-battery Protection· Logic-controlled Enable Applications
· Laptop, Notebook, and Palmtop Computer· CD-ROM, CD-R/RW, DVD Driver· Portable Electronic· PC Peripheral
Figure 1. Package Types of AP2213
SOIC-8TO-252-2 (1) SOT-223TO-252-2 (3)
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Pin NumberPin Name Function
TO-252-2 (1)/TO-252-2 (3)
SOIC-8 SOT-223
3 3 2 VOUT Regulated output voltage
2 5, 6, 7, 8 1 GND Ground
1 2 3 VIN Input Voltage
1 EN Enable input: CMOS or TTL compatible input. Logic high=enable, logic low=shutdown
4 BYP Bypass capacitor for low noise operation
Figure 2. Pin Configuration of AP2213 (Top View)
Pin Configuration
M Package (SOIC-8)
D Package (TO-252-2 (1))
H Package (SOT-223)
VOUT
GND
VIN1
2
3
1
2
3
4
8
7
6
5
VOUT
GND
VIN GND
GND
GNDBYP
ENVIN
VOUT
GND1
2
3
(TO-252-2 (3))
Pin Description
1
2
3
VIN
VOUT
GND
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
+
-Bandgap
Ref.
Current LimitThermal Shutdown
VIN
BYP
EN
GND
VOUT
Functional Block Diagram
Figure 3. Functional Block Diagram of AP2213
A for TO-252-2 (1)/(3)B for SOIC-8
1 (2) (3)
2 (5, 6, 7, 8) (1)
(1)
(4)
3 (3) (2)
A (B) (C)
C for SOT-223
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
4
Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Package Temperature Range
Part Number Marking IDPacking Type
Lead Free Green Lead Free Green
TO-252-2 (1)/TO-252-2 (3) -40 to 125oC
AP2213D-2.5E1 AP2213D-2.5G1 AP2213D-2.5E1 AP2213D-2.5G1 Tube
AP2213D-2.5TRE1 AP2213D-2.5TRG1 AP2213D-2.5E1 AP2213D-2.5G1 Tape & Reel
AP2213D-3.0E1 AP2213D-3.0G1 AP2213D-3.0E1 AP2213D-3.0G1 Tube
AP2213D-3.0TRE1 AP2213D-3.0TRG1 AP2213D-3.0E1 AP2213D-3.0G1 Tape & Reel
AP2213D-3.3E1 AP2213D-3.3G1 AP2213D-3.3E1 AP2213D-3.3G1 Tube
AP2213D-3.3TRE1 AP2213D-3.3TRG1 AP2213D-3.3E1 AP2213D-3.3G1 Tape & Reel
SOIC-8 -40 to 125oC
AP2213M-2.5E1 AP2213M-2.5G1 2213M-2.5E1 2213M-2.5G1 Tube
AP2213M-2.5TRE1 AP2213M-2.5TRG1 2213M-2.5E1 2213M-2.5G1 Tape & Reel
AP2213M-3.0E1 AP2213M-3.0G1 2213M-3.0E1 2213M-3.0G1 Tube
AP2213M-3.0TRE1 AP2213M-3.0TRG1 2213M-3.0E1 2213M-3.0G1 Tape & Reel
AP2213M-3.3E1 AP2213M-3.3G1 2213M-3.3E1 2213M-3.3G1 Tube
AP2213M-3.3TRE1 AP2213M-3.3TRG1 2213M-3.3E1 2213M-3.3G1 Tape & Reel
SOT-223 -40 to 125oC
AP2213H-2.5TRE1 AP2213H-2.5TRG1 EH13C GH13C Tape & Reel
AP2213H-3.0TRE1 AP2213H-3.0TRG1 EH13E GH13E Tape & Reel
AP2213H-3.3TRE1 AP2213H-3.3TRG1 EH13F GH13F Tape & Reel
Circuit Type
Package
E1: Lead Free AP2213 -
TR: Tape and ReelBlank: Tube
Ordering Information
2.5: Fixed Output 2.5V3.0: Fixed Output 3.0V3.3: Fixed Output 3.3V
M: SOIC-8D: TO-252-2 (1)/TO-252-2 (3)
G1: Green
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with"G1" suffix are available in green packages.
H: SOT-223
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Parameter Symbol Value Unit
Supply Input Voltage VIN 20 V
Enable Input Voltage VEN 20 V
Power Dissipation PD Internally Limited (Thermal Protection) W
Lead Temperature (Soldering, 10sec) TLEAD 260 oC
Junction Temperature TJ 150 oC
Storage Temperature TSTG -65 to 150 oC
ESD (Machine Model) ESD 300 V
Thermal Resistance (No Heatsink) θJA
TO-252-2 (1)/TO-252-2 (3) 90oC/W
SOIC-8 160
SOT-223 108
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage tothe device. These are stress ratings only, and functional operation of the device at these or any other conditionsbeyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Max-imum Ratings" for extended periods may affect device reliability.
Parameter Symbol Min Max Unit
Supply Input Voltage VIN 2.5 18 V
Enable Input Voltage VEN 0 18 V
Operating Junction Temperature TJ -40 125 oC
Recommended Operating Conditions
Absolute Maximum Ratings (Note 1)
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ΔVOUT/VOUTVariation from specifiedVOUT
-1 1 %-2 2
Output VoltageTemperature Coefficient(Note 3)
ΔVOUT/ΔT 120 μV/oC
(ΔVOUT/VOUT)/ΔT 48 ppm/oC
Line Regulation VRLINE VIN=3.5V to 13.2V 1.5 4.5mV12
Load Regulation(Note 4)
VRLOAD IOUT=0.1mA to 500mA 1 7mV17
Dropout Voltage (Note 5) VDROP
IOUT=100μA 15 50
mV
70
IOUT=50mA 110 150
230
IOUT=100mA 140 250
300
IOUT=150mA 165 275
350
IOUT=300mA 250 400
500
IOUT=500mA 350 600
700
Standby Current ISTDVEN≤0.4V (shutdown) 0.01 1
μAVEN≤0.18V (shutdown) 5
Ground Pin Current (Note 6)
IGND
VEN≥2.0V, IOUT=100μA 100 150
μA180
VEN≥2.0V, IOUT=50mA 350 600
800
VEN≥2.0V, IOUT=150mA 1.3 1.9
mA
2.5
VEN≥2.0V, IOUT=300mA 4 10
15
VEN≥2.0V, IOUT=500mA 11 20
28
VIN=3.5V, IOUT=100μA, CIN=1.0μF, COUT=2.2μF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),unless otherwise specified.
Electrical CharacteristicsAP2213-2.5 Electrical Characteristics
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max UnitRipple Rejection PSRR f=100Hz, IOUT=100μA 75 dB
Current Limit ILIMIT VOUT=0V 700 1000 mA
Output Noise enoIOUT=50mA, COUT=2.2μF,100pF from BYP to GND
260
Enable Input Logic-lowVoltage
VIL Regulator shutdown 0.4 V0.18
Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V
Enable Input Logic-low Current IILVIL≤0.4V 0.01 1
μAVIL≤0.18V 2
Enable Input Logic-high Current IIHVIL≥2.0V 5 20
μAVIL≥2.0V 25
Thermal Resistance θJC
TO-252-2 (1)/TO-252-2 (3) 20oC/WSOIC-8 45
SOT-223 31
HznV /
Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but nottested in production.Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperaturerange.Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for loadregulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermalregulation specification.Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC≤TJ≤125oC) below its nominal value measured at 1V differential.Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the
Electrical Characteristics (Continued)
VIN=3.5V, IOUT=100μA, CIN=1.0μF, COUT=2.2μF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),unless otherwise specified.
AP2213-2.5 Electrical Characteristics
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
VIN=4V, IOUT=100μA, CIN=1.0μF, COUT=2.2μF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),unless otherwise specified.
AP2213-3.0 Electrical CharacteristicsElectrical Characteristics (Continued)
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ΔVOUT/VOUTVariation from specifiedVOUT
-1 1 %-2 2
Output VoltageTemperature Coefficient(Note 3)
ΔVOUT/ΔT 120 μV/oC
(ΔVOUT/VOUT)/ΔT 40 ppm/oC
Line Regulation VRLINE VIN=4V to 13.2V 1.5 4.5mV12
Load Regulation(Note 4)
VRLOAD IOUT=0.1mA to 500mA 1 8mV17
Dropout Voltage (Note 5) VDROP
IOUT=100μA 15 50
mV
70
IOUT=50mA 110 150
230
IOUT=100mA 140 250
300
IOUT=150mA 165 275
350
IOUT=300mA 250 400
500
IOUT=500mA 350 600
700
Standby Current ISTDVEN≤0.4V (shutdown) 0.01 1
μAVEN≤0.18V (shutdown) 5
Ground Pin Current (Note 6)
IGND
VEN≥2.0V, IOUT=100μA 100 150
μA180
VEN≥2.0V, IOUT=50mA 350 600
800
VEN≥2.0V, IOUT=150mA 1.3 1.9
mA
2.5
VEN≥2.0V, IOUT=300mA 4 10
15
VEN≥2.0V, IOUT=500mA 11 20
28
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but nottested in production.Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperaturerange.Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for loadregulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermalregulation specification.Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC≤TJ≤125oC) below its nominal value measured at 1V differential.Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from thesupply is the sum of the load current plus the ground pin current.
Electrical Characteristics (Continued)
VIN=4V, IOUT=100μA, CIN=1.0μF, COUT=2.2μF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),unless otherwise specified.
AP2213-3.0 Electrical Characteristics
Parameter Symbol Conditions Min Typ Max UnitRipple Rejection PSRR f=100Hz, IOUT=100μA 75 dB
Current Limit ILIMIT VOUT=0V 700 1000 mA
Output Noise enoIOUT=50mA, COUT=2.2μF,100pF from BYP to GND
260
Enable Input Logic-lowVoltage
VIL Regulator shutdown 0.4 V0.18
Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V
Enable Input Logic-low Current IILVIL≤0.4V 0.01 1
μAVIL≤0.18V 2
Enable Input Logic-high Current IIHVIL≥2.0V 5 20
μAVIL≥2.0V 25
Thermal Resistance θJC
TO-252-2 (1)/TO-252-2 (3) 20oC/WSOIC-8 45
SOT-223 31
HznV /
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
10
Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max Unit
Output Voltage Accuracy ΔVOUT/VOUTVariation from specifiedVOUT
-1 1 %-2 2
Output VoltageTemperature Coefficient(Note 3)
ΔVOUT/ΔT 120 μV/oC
(ΔVOUT/VOUT)/ΔT 36.3 ppm/oC
Line Regulation VRLINE VIN=4.3V to 13.2V 1.5 4.5mV12
Load Regulation(Note 4)
VRLOAD IOUT=0.1mA to 500mA 1 9mV18
Dropout Voltage (Note 5) VDROP
IOUT=100μA 15 50
mV
70
IOUT=50mA 110 150
230
IOUT=100mA 140 250
300
IOUT=150mA 165 275
350
IOUT=300mA 250 400
500
IOUT=500mA 350 600
700
Standby Current ISTDVEN≤0.4V (shutdown) 0.01 1
μAVEN≤0.18V (shutdown) 5
Ground Pin Current (Note 6)
IGND
VEN≥2.0V, IOUT=100μA 100 150
μA180
VEN≥2.0V, IOUT=50mA 350 600
800
VEN≥2.0V, IOUT=150mA 1.3 1.9
mA
2.5
VEN≥2.0V, IOUT=300mA 4 10
15
VEN≥2.0V, IOUT=500mA 11 20
28
VIN=4.3V, IOUT=100μA, CIN=1.0μF, COUT=2.2μF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),unless otherwise specified.
AP2213-3.3 Electrical CharacteristicsElectrical Characteristics (Continued)
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions Min Typ Max UnitRipple Rejection PSRR f=100Hz, IOUT=100μA 75 dB
Current Limit ILIMIT VOUT=0V 700 1000 mA
Output Noise enoIOUT=50mA, COUT=2.2μF,100pF from BYP to GND
260
Enable Input Logic-lowVoltage
VIL Regulator shutdown 0.4 V0.18
Enable Input Logic-high Voltage VIH Regulator enabled 2.0 V
Enable Input Logic-low Current IILVIL≤0.4V 0.01 1
μAVIL≤0.18V 2
Enable Input Logic-high Current IIHVIL≥2.0V 5 20
μAVIL≥2.0V 25
Thermal Resistance θJC
TO-252-2 (1)/TO-252-2 (3) 20oC/WSOIC-8 45
SOT-223 31
HznV /
Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but nottested in production.Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperaturerange.Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for loadregulation in the load range from 0.1mA to 500mA. Changes in output voltage due to heating effects are covered by the thermalregulation specification.Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-
40oC≤TJ≤125oC) below its nominal value measured at 1V differential.Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from thesupply is the sum of the load current plus the ground pin current.
Electrical Characteristics (Continued)
VIN=4.3V, IOUT=100μA, CIN=1.0μF, COUT=2.2μF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),unless otherwise specified.
AP2213-3.3 Electrical Characteristics
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
12
Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics
Figure 4. Output Voltage vs. Junction Temperature Figure 5. Dropout Voltage vs. Junction Temperature
Figure 6. Ground Pin Current vs. Output Current Figure 7. Ground Pin Current vs. Junction Temperature
-60 -40 -20 0 20 40 60 80 100 120 1402.484
2.486
2.488
2.490
2.492
2.494
2.496
2.498
2.500
2.502
Out
put V
olta
ge (V
)
Junction Temperature (oC)
AP2213-2.5VIN=3.5V, IOUT=10mACIN=1μF, COUT=2.2μF
-60 -40 -20 0 20 40 60 80 100 120 14050
100150200250300350400450500550600650700750800850
Dro
pout
Vol
tage
(mV)
Junction Temperature (oC)
IOUT=50mA IOUT=100mA IOUT=150mA IOUT=300mA IOUT=500mA
CIN=1μF, COUT=2.2μF
0 100 200 300 400 5000
1
2
3
4
5
6
7
8
9
10
Gro
und
Pin
Cur
rent
(mA)
Output Current (mA)
TA=25oCCIN=1μF, COUT=2.2μF
-60 -40 -20 0 20 40 60 80 100 120 1400
2
4
6
8
10
12
14
16
18
20
Gro
und
Pin
Cur
rent
(mA
)
Junction Temperature (0C)
IOUT=50mA IOUT=100mA IOUT=150mA IOUT=300mA IOUT=500mA
AP2213-2.5VIN=3.5V, CIN=1μF, COUT=2.2μF
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics (Continued)
Figure 8. Enable Current vs. Junction Temperature Figure 9. Enable Voltage vs. Junction Temperature
Figure 10. Output Noise vs. Frequency
-60 -40 -20 0 20 40 60 80 100 120 1402
3
4
5
6
7
8
9
10
11
12
13
VEN=1.8V VEN=2V VEN=3V VEN=3.7V
Ena
ble
Cur
rent
(μA
)
Junction Temperature (oC)
AP2213-2.5, VIN
=3.5VCIN=1μF, COUT=2.2μF, IOUT=100μA
-60 -40 -20 0 20 40 60 80 100 120 1400.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
VEN=logic high VEN=logic low
Ena
ble
Vol
tage
(V)
Junction Temperature (oC)
AP2213-2.5CIN=1μF, COUT=2.2μFIOUT=100μA, VIN=3.5V
10 100 1k 10k 100k 1M 10M
100
10
1
0.1
0.01
0.001
Frequency (Hz)
AP2213-2.5IOUT=10mA, CIN=1μF, COUT=2.2μFVIN=3.5V, CBYP=100pF
0.0001
Out
put N
oise
(
)μV
/ H
z
Figure 11. Line Transient(Conditions: VIN=3.4 to 4.4V, VEN=2V, IOUT=100μA,
Time (200μs/Div)
AP2213-2.5
3.5
4.5
0
ΔVO
UT
(10m
V/D
iv)
V I
N (1
V/D
iv)
10
CBYP=100pF, COUT=2.2μF)
2.5
5.5
-10
-20
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Figure 13. VEN vs. VOUT(Conditions: VEN=0 to 2V, VIN=3.5V, IOUT=30mA,
CBYP=open, CIN=1μF, COUT=2.2μF)
VEN
(1V
/Div
)
Time (40μs/Div)
AP2213-2.5
0
1
0
1
Typical Performance Characteristics (Continued)
Figure 12. Load Transient (Conditions: VIN=3.5V, CBYP=100pF, VEN=2V,
I OU
T (0
.5A/
Div
)
ΔV
OU
T (1
0mV/
Div)
Time (200μs/Div)
AP2213-2.5
-10
0
0
0.5
VO
UT
(1V/
Div
)
Figure 14. PSRR vs. Frequency
10mA
IOUT=10 to 500mA, CIN=1μF, COUT=2.2μF)
1
-0.5
-20
-30
2
3
2
-1
10 100 1k 10k 100k 1M0
10
20
30
40
50
60
70
80
90
100
PSR
R (d
B)
Frequency (Hz)
AP2213-2.5VIN=3.5V, VRIPPLE=1VPP
IOUT=10mA, COUT=2.2μF
Figure 15. Power Dissipation vs. Ambient Temperature
25 50 75 100 125 1500.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Pow
er D
issi
patio
n (W
)
Ambient Temperature (oC)
TO-252-2(1)/(3) PackageNo Heatsink
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics (Continued)
Figure 16. Power Dissipation vs. Ambient Temperature Figure 17. ESR vs. Output Current
Figure 18. ESR vs. Output Current
0 50 100 150 200 250 300 350 400 450 5000.01
0.1
1
10
100
1000
ESR
(Ω)
Output Current (mA)
COUT
=1μFNo Bypass Capacitor
Stable Area
0 50 100 150 200 250 300 350 400 450 5000.01
0.1
1
10
100
1000
ESR
(Ω)
Output Current (mA)
COUT
=2.2μFNo Bypass Capacitor
Stable Area
25 50 75 100 125 1500.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Pow
er D
issi
patio
n (W
)
Ambient Temperature (oC)
SOIC-8 PackageNo Heatsink
Figure 19. ESR vs. Output Current
0 50 100 150 200 250 300 350 400 450 5000.01
0.1
1
10
100
1000
ESR
(Ω)
Output Current (mA)
COUT=4.7μFNo Bypass Capacitor
Stable Area
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
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Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Figure 20. Typical Application of AP2213 (Note 7)
Typical Application
BYP
100pF
EN
GND
AP2213-2.5VIN=3.5V VOUT=2.5V
2.2μF1μF
VIN VIN VOUT VOUT
COUT
CBYP
CIN
Note 7: Dropout voltage is 350mV when TA=25oC. In order to obtain a normal output voltage, VOUT+0.35V is the minimuminput voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltageis VOUT+1V to 18V. For AP2213-2.5 version, its input voltage can be set from 3.5V(VOUT+1V) to 18V.
17
BCD Semiconductor Manufacturing Limited
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
Dec. 2012 Rev. 2. 0
Input CapacitorA 1μF minimum capacitor is recommended to beplaced between VIN and GND.
Output CapacitorIt is required to prevent oscillation. 1μF minimum isrecommended when CBYP is unused. 2.2μF mini-mum is recommended when CBYP is 100pF. The out-put capacitor may be increased to improve transientresponse.
Noise Bypass CapacitorBypass capacitor is connected to the internal voltagereference. A small capacitor connected from BYP toGND make this reference quiet, resulting in asignificant reduction in output noise, but the ESRstable area will be narrowed. In order to keep theoutput stability, it is recommended to use the bypasscapacitor no more than 100pF.
The start-up speed of the AP2213 is inverselyproportional to the value of reference bypasscapacitor. In some cases, if output noise is not amajor concern and rapid turn-on is necessary, omitCBYP and leave BYP open.
Power DissipationThermal shutdown may take place if exceeding themaximum power dissipation in application. Under allpossible operating conditions, the junction tempera-
ture must be within the range specified under abso-lute maximum ratings to avoid thermal shutdown. To determine if the power dissipated in the regulatorreaches the maximum power dissipation (see figure16, 17), using: TJ = PD*θJA + TAPD=(VIN-VOUT)*IOUT+VIN*IGND
Where: TJ≤TJ(max), TJ(max) is absolute maximum rat-ings for the junction temperature; VIN*IGND can beignored due to its small value.
TJ(max) is 150oC, θJA is 90oC/W for TO-252-2 (1)/
TO-252-2 (3) package and 160oC/W for SOIC-8package.
Example: For 2.5V version packaged in SOIC-8,IOUT=500mA, TA=50oC, VIN(Max) is:
(150oC-50oC)/(0.5A*160oC/W)+2.5V=3.75V
Therefore, for good performance, please make surethat input voltage is less than 3.75V without heatsinkwhen TA=50oC.
Application Information
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
18
Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Mechanical Dimensions
Unit: mm(inch)TO-252-2 (1)
1.35
0(0.
053)
1.65
0(0.
065)
0.60
0(0.
024)
0.90
0(0.
035)
4.500(0.177)4.700(0.185)
3°4°
3.80
0RE
F(0.
150R
EF)
4.80
0(0.
189)
6.50
0(0.
256)
4.300(0.169)5.400(0.213)
1.40
0(0.
055)
1.78
0(0.
070)
0.000(0.000)0.127(0.005)
0.450(0.018)0.580(0.023)
2.300TYP
9.50
0(0.
374)
9.90
0(0.
390)
0.700(0.028)0.900(0.035)0.500(0.020)0.700(0.028)
5.200(0.205)5.400(0.213)
6.450(0.254)6.650(0.262)
2.55
0(0.
100)
2.90
0(0.
114)
5.45
0(0.
215)
6.25
0(0.
246)
2.200(0.087)2.400(0.094)
5° 5°
8°
0.450(0.018)0.580(0.023)
19
BCD Semiconductor Manufacturing Limited
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
Dec. 2012 Rev. 2. 0
Mechanical Dimensions (Continued)
Unit: mm(inch)TO-252-2 (3)
1.29±0.1
2.90
0REF
1.40
0(0.
055)
1.70
0(0.
067)
0.470(0.019)0.600(0.024)
59
089.
800(
0.38
6)10
.400
(0.4
09)
2.200(0.087)2.380(0.094)
0.900(0.035)1.100(0.043)
4.700REF
6.500(0.256)6.700(0.264)
5.130(0.202)5.460(0.215)
0.15
0(0.
006)
0.75
0(0.
030)
6.00
0(0.
236)
6.20
0(0.
244)
0.720(0.028)0.850(0.033)
2.286(0.090)BSC
0.720(0.028)0.900(0.035)
0.90
0(0.
035)
1.25
0(0.
049)
1.80
0REF
80
0.60
0(0.
0 24)
1.00
0(0.
039)
73
95
5.25
0REF
Option 1
Option 2
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
20
Dec. 2012 Rev. 2. 0 BCD Semiconductor Manufacturing Limited
Mechanical Dimensions (Continued)
SOIC-8 Unit: mm(inch)
φ
0°8°
1°5°
R0.150(0.006)
R0.
150(
0.00
6)
1.000(0.039)
0.330(0.013)0.510(0.020)
1.350(0.053)1.750(0.069)
0.100(0.004)0.300(0.012)
0.900(0.035)
0.800(0.031)
0.200(0.008)
3.800(0.150)4.000(0.157)
7°
7°
20:1D
1.270(0.050) TYP
0.190(0.007)0.250(0.010)
8°
D 5.800(0.228)6.200(0.244)
0.675(0.027)0.725(0.029)
0.320(0.013)
8°
0.450(0.017)0.800(0.031)
4.700(0.185)5.100(0.201)
Note: Eject hole, oriented hole and mold mark is optional.
φ
21
BCD Semiconductor Manufacturing Limited
500mA LOW NOISE LDO REGULATOR AP2213
Data Sheet
Dec. 2012 Rev. 2. 0
Mechanical Dimensions (Continued)
SOT-223 Unit: mm(inch)
3.30
0(0.
130)
3.70
0(0.
146)
6.70
0(0.
264)
7.30
0(0.
287)
2.900(0.114)3.100(0.122)
0.610(0.024)
0.810(0.032)2.300(0.091)
TYP
6.300(0.248)6.700(0.264)
1.750(0.069)TYP
4.500(0.177)
4.700(0.185)
0.020(0.001)
0.100(0.004)
1.520(0.060)
1.800(0.071)1.500(0.059)1.700(0.067)
0.250(0.010)
0.350(0.014)
0.250(0.010)
0° 10°
0.900(0.035)MIN
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for anyparticular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or useof any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights orother rights nor the rights of others.
- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Limited800, Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing LimitedMAIN SITE
REGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen OfficeAdvanced Analog Circuits (Shanghai) Corporation Shenzhen OfficeRoom E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951Fax: +86-755-8826 7865
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- IC Design GroupAdvanced Analog Circuits (Shanghai) Corporation8F, Zone B, 900, Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for anyparticular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or useof any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights orother rights nor the rights of others.
- Wafer FabShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.800 Yi Shan Road, Shanghai 200233, ChinaTel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICEShenzhen OfficeShanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen OfficeUnit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,China Tel: +86-755-8826 7951Fax: +86-755-8826 7865
Taiwan OfficeBCD Semiconductor (Taiwan) Company Limited4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, TaiwanTel: +886-2-2656 2808Fax: +886-2-2656 2806
USA OfficeBCD Semiconductor Corp.30920 Huntwood Ave. Hayward,CA 94544, USATel : +1-510-324-2988Fax: +1-510-324-2788
- HeadquartersBCD Semiconductor Manufacturing LimitedNo. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, ChinaTel: +86-21-24162266, Fax: +86-21-24162277