Gen-III | 30A - 650V SiC Schottky Diode | UJ3D06530TS . Datasheet .

Description

Features Typical Applications

w w Power converters

w w Industrial motor drives

w w Switching-mode power supplies

w w Power factor correction modules

w

w

w

w AEC-Q101 qualified

Maximum Ratings

Symbol Units

VR V

VRRM V

VRSM V

IF A

TJ,max °C

TJ, TSTG °C

Tsold °C

175

i2t value i2dt A2sTC = 110°C, tp =10ms 112

W

Maximum junction temperature

1.6mm from case for

10s260

288.5

67.3

Operating and storage temperature

Soldering temperatures, wavesoldering only

allowed at leads

-55 to 175

136

Repetitive forward surge current

sine halfwave, D=0.1IFRM

PTot

TC = 25°C

Non-repetitive peak forward current IF,max

Power dissipation

TC = 25°C, tp =10ms

TC = 140°C

ATC = 110°C, tp =10ms 66.1

ATC = 110°C, tp =10ms

1250

1250

165

30TC = 140°C

TC = 25°C, tp = 10msA

TC = 110°C, tp =10ms 150

107.2

Value

650

Test Conditions

United Silicon Carbide, Inc. offers the 3rd generation of high

performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse

recovery charge and 175°C maximum junction temperature, these

diodes are ideally suited for high frequency and high efficiency power

systems with minimum cooling requirements.

Parameter

DC blocking voltage

Repetitive peak reverse voltage, Tj=25°C

Extremely fast switching not dependent on temperature

No reverse or forward recovery

Enhanced surge current capability, MPS structure

175°C maximum operating junction temperature

Easy paralleling

Excellent thermal performance, Ag sintered

100% UIS tested

Maximum DC forward current

Non-repetitive forward surge current

sine halfwaveIFSM

TC = 25°C, tp =10ms

TC = 25°C, tp = 10ms

Surge peak reverse voltage

650

650

UJ3D06530TS TO-220-2L UJ3D06530TS

Part Number Package Marking

1 2

CASE

2 1

CASE

Rev. B, January 2018 1 For more information go to www.unitedsic.com.

Gen-III | 30A - 650V SiC Schottky Diode | UJ3D06530TS . Datasheet .

Electrical Characteristics

TJ = +25°C unless otherwise specified

Min Typ Max

- 1.5 1.7

- 1.77 2.10

- 1.85 2.25

- 30 370

- 390

QC 72 nC

990

117

101

EC 10.5 mJ

(1) Qc is independent on Tj, diF/dt, and IF as shown in the application note USCi_AN0011.

Thermal characteristics

Min Typ Max

RqJC 0.4 0.52 °C/W

Typical Performance

Figure 1 Typical forward characteristics

Total capacitive charge (1)

VR=650V, Tj=25°CIR

symbol Test Conditions

Forward voltage VF

Figure 2 Typical forward characteristics in surge

current

mA

VR=1V, f=1MHz

C

V

UnitsValue

VR=600V, f=1MHz

Reverse current

VR=400V

IF = 30A, TJ =175°C

Parameter Symbol Test Conditions

ValueUnits

pF

Capacitance stored energy

IF = 30A, TJ = 25°C

Parameter

VR=300V, f=1MHz

VR=400V

Total capacitance

VR=650V, TJ=175°C

IF = 30A, TJ =150°C

Thermal resistance, junction - case

0

20

40

60

80

100

120

140

160

0 1 2 3 4 5 6

Fo

rward

Cu

rren

t, I

F (

A)

Forward Voltage, VF (V)

- 55°C

25°C

100°C

150°C

175°C

0

10

20

30

40

50

60

0 0.5 1 1.5 2 2.5 3

Fo

rward

Cu

rren

t, I

F (

A)

Forward Voltage, VF (V)

- 55°C

25°C

100°C

150°C

175°C

Rev. B, January 2018 2 For more information go to www.unitedsic.com.

Gen-III | 30A - 650V SiC Schottky Diode | UJ3D06530TS . Datasheet .

Figure 3 Typical reverse characteristics Figure 4 Power dissipation

Figure 5 Diode forward current Figure 6 Maximum transient thermal impedance

0

50

100

150

200

250

300

25 50 75 100 125 150 175P

ow

er

Dis

sp

iati

on

, P

To

t (W

)

TC (°C)

0

50

100

150

200

250

300

25 50 75 100 125 150 175

Fo

rward

Cu

rren

t,I F

(A

)

TC (°C)

D = 0.1

D = 0.3

D = 0.5

D = 0.7

D = 1.0

0.01

0.1

1

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01

Max. T

herm

al

Imp

ed

an

ce,

ZqJC (°C

/W)

Time , t (s)

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

Single Pulse

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

200 250 300 350 400 450 500 550 600 650

Rev

ers

e C

urr

en

t, I

R (

A)

Reverse Voltage, VR (V)

- 55°C

25°C

125°C

175°C

10-3

10-4

10-5

10-6

10-7

Rev. B, January 2018 3 For more information go to www.unitedsic.com.

Gen-III | 30A - 650V SiC Schottky Diode | UJ3D06530TS . Datasheet .

Figure 7 Capacitance vs. reverse voltage at

1MHz

Figure 8 Typical capacitive charge vs. reverse

voltage

Figure 9 Typical capacitance stored energy

vs. reverse voltage

0

200

400

600

800

1000

1200

1400

0.1 1 10 100 1000

Cap

acit

an

ce,

C (

pF

)

Reverse Voltage, VR (V)

0

5

10

15

20

25

30

0 100 200 300 400 500 600 700

EC (m

J)

Reverse Voltage, VR (V)

0

10

20

30

40

50

60

70

80

90

100

0 100 200 300 400 500 600 700

QC (

nC

)

Reverse Voltage, VR (V)

QC = 𝐶 𝑉 𝑑𝑉𝑉𝑅

0

Rev. B, January 2018 4 For more information go to www.unitedsic.com.

Gen-III | 30A - 650V SiC Schottky Diode | UJ3D06530TS . Datasheet .

Disclaimer

United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the

United Silicon Carbide, Inc. products and services described herein.

United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent

physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no

responsibility or liability for any errors or inaccuracies within.

Information on all products and contained herein is intended for description only. No license, express or

implied, to any intellectual property rights is granted within this document.

Rev. B, January 2018 5 For more information go to www.unitedsic.com.