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291225 V11 170215 GaN on Si Development for Lighting and Novel LED Applications Dr David Wallis

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Page 1: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

291225 V11 170215

GaN on Si Development for Lighting and Novel LED Applications

Dr David Wallis

Page 2: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

2COMPANY CONFIDENTIAL

IntroductionGaN based LEDs are driving a revolution in lighting

Large range of applications: General lighting Automotive Back lighting for displays Wearables

Currently the general lighting and automotive LED markets are worth approximately £10bn p.a. Significant market growth forecast

However, challenges still remain LED cost needs to be reduced Further improvements in efficiency New LED form factors Integration with systems

Incandescent Light bulbs

LED Light Bulbs

Wall Plug Efficiency

5% >50%

Life Time 1000hrs >10,000hrs

Emission Black body spectrum Controllable colour temperature and

CRICost £0.5 £5 to £10

Page 3: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

3COMPANY CONFIDENTIAL

Plessey Semiconductors

Plymouth

Plessey was relaunched in 2010 following a management by-out of the Fab facilities Plymouth site established in 1984 6” Fab with 1300m2 class 10 clean room 8” Fab with 1550m2 class 1 SMIF clean room 650m2 test facility

Plessey is actively addressing these challenges with its GaN on Silicon technology and manufacturing LEDs in the UK

Page 4: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

4COMPANY CONFIDENTIAL

Substrate Cost and LED Cost BreakdownCost breakdown of packaged LED

Yole Development (2013)Substrate Cost per mm2

2” Sapphire $0.0041

4” Sapphire $0.0053

6” Sapphire $0.0170

6” Silicon $0.0017

LED Substrate Cost

11%

21%

23%

34%

11%

SubstrateEpitaxyProcessingPackagingPhosphor

The Si substrate cost is upto 10x lower than Sapphire

However, the substrate cost is only 10% of total LED cost

GaN on Silicon is an ENABLER of cost reductions in other areas

Processing, Packaging, Phosphors

Page 5: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

5COMPANY CONFIDENTIAL

Reduced LED Production Cost

Large diameter Si substrates allow: LED Processing in a Si wafer Fab

Fully depreciated building Increased Automation

Reduced manpower cost High yield

Larger capacity

Plessey 150mm and 200mm Si Processing Fab

Robot wafer Handling Cassette to Cassette processing

Page 6: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

6COMPANY CONFIDENTIAL

Inherent Advantages of GaN on Si

Wavelength Std dev

GaN on Si

Typical GaN on Sapphire

Wavelength map of 7x6” wafers

Strong temperature sensitivity of InGaN Q-well growth gives wavelength variation across wafers Approx 1.5nm per oC Other effects also seen due to gas flow in reactor

GaN on Si delivers better temperature uniformity Higher wavelength binning yield – lower costs for LEDs with tight binning requests Sharper wavelength peak for large die (upto 14mm2)

Page 7: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

7COMPANY CONFIDENTIAL

Improved Chip DesignGaN on Si also offers other opportunity to improved chip design and integration

Lower LED cost Lower system cost New applications

Chip Scale Packaging (CSP)

Chip Scale Optics (CSO)

Large area die

Die level integration

Page 8: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

8COMPANY CONFIDENTIAL

LED Packaging Costs

For GaN on Si the standard PLCC packing cost become the most significant element GaN on Si enables Chip Scale Packaging (CSP) for significantly reduced cost

CSP has been used for Si electronics for many years

Diepackage

Package

LED Die

Cost break down of packaged GaN on Si LED

Page 9: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

9COMPANY CONFIDENTIAL

Chip Scale Packaging (CSP)

Makes use of std Si technology Sub-mount on a Si wafer through wafer vias to take contacts out of the back of

the sub-mount Reduced phosphor usage Improved thermal performance Will ultimately allow removal of wire bond –improved

reliability Route to Wafer Scale Packaging Further functional integration

White/5000K Blue emitter

Encapsulate and phosphor

Wire bondGaN on Si LED Die

Silicon sub-mount

LED die with Chip Scale Packaging

Through wafer vias allow back contacts

Page 10: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

10COMPANY CONFIDENTIAL

Mirror M

irror

Chip Scale Optics (CSO)Incorporation of optical elements on to the LED Die

Improved control of optical beam

Use of Si growth substrate to give optical function MEMS style process Make use of std Si processing techniques

More efficient optical system

Removes cost of secondary optics

Bonding metalsMirror

GaN LED

Integrated optics for beam control

Si Handle wafer

Si Si

Page 11: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

11COMPANY CONFIDENTIAL

Large Area LEDsRequirement for very high flux levels > 10 Watts of optical power from a single die For LED projectors > 2000 required on Lumens on screen

Single large area die give better coupling to optics than multiple small die

GaN on Si has specific benefits for large area LEDs

Projectors Spot lamps

Torches

Page 12: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

12COMPANY CONFIDENTIAL

GaN on Si for Large Area LEDs

For GaN on Si the light output is maintained as the die is scaled Sapphire: 20% efficiency drop on scaling from 500x500um to 1500x1500um Silicon: 2% efficiency drop on scaling from 500x500um to 1500x1500um

Thermal performance of die is also improved Si thermal conductivity 5x greater than sapphire

GaN on Sapphire based LEDsextract light through the die edges

GaN on Si based LEDs extract light through the surface of the die

Si handle wafer

Page 13: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

13COMPANY CONFIDENTIAL

Large area die developed for projector application

Collaboration with University of Bath and digital Projection Ltd

Single die driven at 25A

Also need to develop the thermal mount

150mm wafer with 14mm2 die14mm2 die bonded in to thermal package

High Intensity LEDs for Advanced Projection Systems (HiLEAPS)

Page 14: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

14COMPANY CONFIDENTIAL

Beam Shaping for Digital Projection Systems

(LED)

Digital Projector Illumination system

Projector image formed by switching mirror elements

Only light with in a +/- 12o cone is utilised

Significant enhancement of Projector efficiency if LED output can be match to the projector optics

Page 15: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

15COMPANY CONFIDENTIAL

Improved Light Coupling using Nano-rod Structures

Nano-rod photonic crystals potentially allow the LED output to be focused in to a narrow cone Being developed as part of the HiLEAPS project

Better compatibility with large area devices than MEMS style optics

Nano rod pitch must be matched to the emission wavelength Makes use of Plessey high specification Lithography capability

LED surface with Nano-rodFDTD simulation of nano-

rods at UoB

ASML Stepper (<0.5um features)

Nano-rod pitch = 1um

Page 16: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

16COMPANY CONFIDENTIAL

New Routes to LED IntegrationTraditionally LEDs are packaged and then mounted on a PCB or Ceramic heat sink

Chip on Board (CoB) Cumbersome for large numbers of LEDs Limited options for finer integration

Transfer printing of LEDs offers a route to fine level integration Being developed at University of Strathclyde LEDs can be printed on to any substrate

LEDs on ceramic packages on Chip on Board (CoB)

Page 17: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

17COMPANY CONFIDENTIAL

Transfer Printing of LEDs

1. Free standing LEDs fabricated on Si substrate, held by anchor features (red); contacts on topside

2. LEDs lifted off substrate with soft-stamp pick up tool (PDMS)

3. Receiver substrate prepared with interconnection tracks and contacts (inkjet)

4. LEDs transferred to receiver substrate from handling stamp

Process is enabled by the well defined etch chemistry of the Silicon substrate

Page 18: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

18COMPANY CONFIDENTIAL

Transfer Printing of LEDs

LEDS can be transferred to a variety of substrates including: Plastics for flexible displays Diamond for improved heat sinking

Transfer printed LED with contacts

Array of LEDs in place on Si Substrate

Optics Express 23 (7), 9329-9338 (2015)

Illuminated LEDs

300um

LEDs array on a plastic substrate

IR image of an LED array on a diamond heat sink

Emitting pixel

Page 19: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

19COMPANY CONFIDENTIAL

Summary Plessey is manufacturing of GaN LEDs in the UK

GaN on Si offers a route to lower cost manufacturing

GaN on Si also offers several technological advantages Chip Scale Packaging Chip Scale Optics Improved uniformity and heat transfer for large area die

Plessey is exploring a wide range of opportunities to enhance the functionality of LED

PLW114050 packaged LED

Powered upPLW117010

DotLED with CSP

DotLED in conventional

packageFilament LEDs

Filament Light Bulb

Page 20: GaN on Si Development for Lighting and Novel LED … on Si Development for Lighting and Novel LED Applications Dr David Wallis. COMPANY CONFIDENTIAL 2 Introduction GaN based LEDs are

20COMPANY CONFIDENTIAL

Acknowledgements

Plessey

John Whiteman

Samir Mezouari

James Pilkington

John Ellis

Zainul Fiteri

Wei Sin Tan

Keith Strickland

Joe Healy

Institute of photonics (Strathclyde)

Martin Dawson

Ian Watson

Antonio Trindade

University of Bath

Duncan Alsopp

Philip Shields

Szymon Lis

Sophia Fox

Digital Projection Limited

Guy Thompson

Steve Chapman


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