fqaf19n60 datasheet, pdf

2000 Fairchild Semiconductor International

April 2000

Rev. A, April 2000

FQ

AF

19N

60

QFETQFETQFETQFETTMFQAF19N60600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply.

Features

11.2A, 600V, RDS(on) = 0.38 @ VGS = 10 V Low gate charge ( typical 70 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Absolute Maximum Ratings TC = 25C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQAF19N60 Units

VDSS Drain-Source Voltage 600 V

ID Drain Current - Continuous (TC = 25C) 11.2 A

- Continuous (TC = 100C) 7.0 A

IDM Drain Current - Pulsed (Note 1) 44.8 A

VGSS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 1150 mJ

IAR Avalanche Current (Note 1) 11.2 A

EAR Repetitive Avalanche Energy (Note 1) 12 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 VnsPD Power Dissipation (TC = 25C) 120 W

- Derate above 25C 0.96 W/C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 C

TLMaximum lead temperature for soldering purposes,

1/8 from case for 5 seconds300 C

Symbol Parameter Typ Max Units

RJC Thermal Resistance, Junction-to-Case -- 1.04 CW

RJA Thermal Resistance, Junction-to-Ambient -- 40 CW

! "

!

!

!"

"

"

! "

!

!

!"

"

"

S

D

G

TO-3PFFQAF Series

G SD


FQ

AF

19

N6

0

(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)

Rev. A, April 2000

Electrical CharacteristicsTC = 25C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 16.8mH, IAS = 11.2A, VDD = 50V, RG = 25 , Starting TJ = 25C3. ISD 18.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2%5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 600 -- -- VBVDSS/ TJ

Breakdown Voltage Temperature Coefficient

ID = 250 A, Referenced to 25C -- 0.65 -- V/C

IDSSZero Gate Voltage Drain Current

VDS = 600 V, VGS = 0 V -- -- 10 AVDS = 480 V, TC = 125C -- -- 100 A

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 3.0 -- 5.0 VRDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 5.6 A -- 0.3 0.38

gFS Forward Transconductance VDS = 50 V, ID = 5.6 A -- 12 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 2800 3600 pF

Coss Output Capacitance -- 350 450 pF

Crss Reverse Transfer Capacitance -- 35 45 pF

Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 18.5 A,

RG = 25

-- 65 140 ns

tr Turn-On Rise Time -- 210 430 ns

td(off) Turn-Off Delay Time -- 150 310 ns

tf Turn-Off Fall Time -- 135 280 ns

Qg Total Gate Charge VDS = 480 V, ID = 18.5 A,

VGS = 10 V

-- 70 90 nC

Qgs Gate-Source Charge -- 17 -- nC

Qgd Gate-Drain Charge -- 33 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 11.2 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 44.8 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11.2 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 18.5 A,

dIF / dt = 100 A/s -- 420 -- ns

Qrr Reverse Recovery Charge -- 4.7 -- C


FQ

AF

19N

60

Rev. A, April 2000

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.610

-1

100

101

25150

Notes : 1. V

GS = 0V

2. 250s Pulse Test

I DR ,

Rev

erse

Dra

in C

urre

nt [

A]

VSD

, Source-Drain Voltage [V]

2 4 6 8 1010

-1

100

101

Notes : 1. V

DS = 50V

2. 250s Pulse Test

-55

150

25

I D ,

Dra

in C

urre

nt [

A]

VGS , Gate-Source Voltage [V]10

-110

010

1

100

101

Notes : 1. 250s Pulse Test 2. T

C = 25

VGS

Top : 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V

I D ,

Dra

in C

urre

nt [

A]

VDS

, Drain-Source Voltage [V]

0 15 30 45 60 750

2

4

6

8

10

12

VDS

= 300V

VDS

= 120V

VDS

= 480V

Note : ID = 18.5 A

VG

S, G

ate-

Sou

rce

Vol

tage

[V]

QG, Total Gate Charge [nC]10

-110

010

10

1000

2000

3000

4000

5000C

iss = C

gs + C

gd (C

ds = shorted)

Coss

= Cds + C

gdC

rss = C

gd

Notes : 1. V

GS = 0 V

2. f = 1 MHzC

rss

Coss

Ciss

Cap

acita

nce

[pF]

VDS


0 10 20 30 40 50 60 700.0

0.2

0.4

0.6

0.8

1.0

1.2

VGS

= 20V

VGS

= 10V

Note : TJ = 25

RD

S(O

N) [

],D

rain

-Sou

rce

On-

Res

ista

nce

ID, Drain Current [A]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and

Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics


FQ

AF

19

N6

0

Rev. A, April 2000

1 0-5

1 0-4

1 0-3

1 0-2

1 0-1

1 00

1 01

1 0-2

1 0-1

1 00

N o te s : 1 . Z

J C( t) = 1 .0 4 /W M a x .

2 . D u ty F a c to r , D = t1/ t

2

3 . TJ M

- TC

= PD M

* Z J C

( t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Z

JC(t

), T

he

rma

l R

es

po

ns

e

t1, S q u a re W a v e P u ls e D u ra t io n [ s e c ]

25 50 75 100 125 1500

3

6

9

12

I D, D

rain

Cur

rent

[A]

TC, Case Temperature []10

010

110

210

310

-1

100

101

102

10 s

DC

10 ms

1 ms

100 s

Operation in This Area

is Limited by R DS(on)

Notes :

1. TC = 25

oC

2. TJ = 150

oC

3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS


-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes : 1. V

GS = 10 V

2. ID = 9.3 A

RD

S(O

N), (

Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes : 1. V

GS = 0 V

2. ID = 250 A

BVDS

S, (

Nor

mal

ized

)D

rain

-Sou

rce

Brea

kdow

n Vo

ltage

TJ, Junction Temperature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature

Figure 7. Breakdown Voltage Variationvs. Temperature

Figure 8. On-Resistance Variationvs. Temperature

Figure 11. Transient Thermal Response Curve

t1

PDM

t2


FQ

AF

19N

60

Rev. A, April 2000

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Typeas DUT

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RGVGS

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21

EAS = L IAS2----

21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p


FQ

AF

19

N6

0

Rev. A, April 2000

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD( DUT )

VDS( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------D =Gate Pulse Width

Gate Pulse Period--------------------------


FQ

AF

19N

60

Rev. A, April 2000

Package Dimensions

15.50 0.20 3.60 0.20

26.5

0 0

.20

4.50

0.2

0

10.0

0 0

.20

16.5

0 0

.20

10

16.5

0 0

.20

22.0

0 0

.20

23.0

0 0

.20

1.50

0.2

0

14.5

0 0

.20

2.00

0.2

0

2.00 0.202.00 0.20

0.85 0.03

2.00 0.20

5.50 0.20

3.00 0.20(1.50)

3.30 0.20

2.00 0.204.00 0.20

2.50

0.2

0

14.8

0 0

.20

3.30

0.2

0

2.00

0.2

0

5.50

0.2

0

0.75 +0.200.10

0.90 +0.200.10

5.45TYP[5.45 0.30]

5.45TYP[5.45 0.30]

TO-3PF

2000 Fairchild Semiconductor International Rev. A, January 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

ACExBottomlessCoolFETCROSSVOLTE2CMOSFACTFACT Quiet SeriesFAST

FASTrGTO

HiSeCISOPLANARMICROWIREPOPPowerTrench

QFETQSQuiet SeriesSuperSOT-3SuperSOT-6

SuperSOT-8SyncFETTinyLogicUHCVCX

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTORINTERNATIONAL.

As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected to

result in significant injury to the user.2. A critical component is any component of a life supportdevice or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

fqaf19n60 datasheet, pdf

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