foup (pod) contamination control solutions for 200 mm, … · foup (pod) contamination control...
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![Page 1: FOUP (Pod) contamination control solutions for 200 mm, … · FOUP (Pod) contamination control solutions for 200 mm, 300 mm and 450 mm substrates Jorgen Lundgren, Senior Applications](https://reader030.vdocuments.us/reader030/viewer/2022012304/5b2d42467f8b9af0648c0948/html5/thumbnails/1.jpg)
FOUP (Pod) contamination control solutions for 200 mm,
300 mm and 450 mm substrates
Jorgen Lundgren, Senior Applications Engineer ‒ Entegris GmbH
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Agenda
• Entegris introduction
• FOUP (Pod) Contamination Control Solution
– Advanced Purge
– EBM Material – EBM Material
• Purge test results
• M200 SMIF pod
• Summary
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Entegris at a Glance
• Market leader in contamination control, critical
materials handling and advanced process materials
for semiconductor and other high-tech industries
• Fiscal 2013 pro forma sales of $1.1 billion
• 3,500 employees worldwide
• 618 U.S. patents and 1073 patents in
other countries
• Headquartered in Billerica, MA with a global
infrastructure of manufacturing, service and research
1966 Founded asFluoroware, Inc.
2000 IPO
2005 Merges with Mykrolis, previously part of Millipore
2007 Acquires Surmet’s SemiconductorCoatings Business
2008 Acquires Poco Graphite
2009 Acquires PureLine
Entegris Milestones
infrastructure of manufacturing, service and research
facilities in the U.S., Malaysia, Singapore, Taiwan,
China, Korea, Japan, Israel, Germany and France
• Publicly traded on NASDAQ under ENTG
2012 Acquires EPT
2013 Acquires Jetalon Solutions
2014 Acquires ATMI, a leading provider of advanced materials
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Wafer and reticle handling solutions have kept pace
with each advancement in IC manufacturing
700
800
900
1000
Tech
no
log
y N
od
e (
nm
)
SRP reticle pod released
300 mm FOUP
300 mm wafer shipper
RSP200 reticle pod
released
RSP150 reticle pod
1985: 200 mm SMIF pod
1988: SMIF reticle podInnovation
0
100
200
300
400
500
600
1989 1991 1993 1995 1997 1999 2001 2003 2005 2007 2009 2011 2013 2015
Year
Tech
no
log
y N
od
e (
nm
)
Dual opening (manual and FIMS)
300 mm FOSB
RSP150 reticle pod
released
Clarilite® Reticle Solution released
Spectra™ FM4911 approved FOUP
Wafer Environment Control FOUPs, EUV Pod, 450 mm MAC/FOUP
Clarilite® and Spectra™ are trademarks of Entegris, Inc.
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Why is Microenvironmental Control Critical?
• Faster chips, greater performance
• New processes and materials
• 45 nm and below processes
• New requirements:
– Achieve very low contaminant levels
(AMCs, O2, RH)
– Maintain low levels for extended period
of time (w/o maintenance purge)
Manufacturing / Development Research
45 nm 32/28 nm 22/20 nm 16/14 nm 10 nm
of time (w/o maintenance purge)
– Better purge uniformity across wafer slots
– Maintain low level when FOUP door is open
• Advantages:
– Higher yield
– Smaller wafer-to-wafer variation
– Higher tool throughput
– More flexible WIP management
(extended queue time)
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Why H2O and O2 Control are Critical
Cu + O2 + H2O
F- as catalyst
Oxidized CuRemoved by following
wet cleaning (Cu-loss)
Copper Corrosion*
Defect / Crystal Growth
*Source: T. Kamoshima, et al., "Controlling ambient gas in slot-to-slot space inside FOUP to suppress Cu-loss after dual damascene patterning," IEEE Trans. Semicon. Manufact., vol. 21 (Renesas & Hitachi).© 2008 IEEE – all rights reserved.
Defect / Crystal Growth
AMC + H2O Chemical reaction
HF
HCl
� F2 and Cl2 are common gases used for etching
� Residual F2 and Cl2 will react with H2O and form HF and HCl
that will lead to attack of the edge profile
Excessive Etch
Cl2 HCl
H2O
F2
H2O
HF
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Crystal Defects
• Using EBM FOUPs and purge can effectively help with defect reduction
PC FOUP without purging
Moisture reacts with
Defects
moisture
moisture
defect
AMC
Wafers are dirty
and can outgas
Snorkel purge can remove
AMC/moisture away from
wafers and FOUP
Even if there is still AMC inside
FOUP, barrier material can maintain
FOUP within a low moisture
environment for a few hours
No moisture, can ensure
wafers are clean
Entegris barrier material FOUP with snorkel purge
AMC will react with
moisture
Moisture reacts with
contaminant in FOUP and
deposit/condense on wafers
AMC
moisture
N2
AMC
Defect
Free
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Is Queue Time Control Enough? Wafers are idling longer on load port during process!
So, LP purge is needed to protect your wafers
Queue time Cycle time
Process
tool #1Process
tool #2
AMC/moisture/oxygen has
caused damage to wafers
1. Wafers can be idle for 1–2 hours on single
processing tool and defects can be formed
during this time on load port
2. Therefore, N2/CDA protected environment is
strongly recommended
Load port
tool #1tool #2
Wafers might have been damaged while waiting
for other wafers to be processed, so no matter
how you control the queue time, it might not work
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Advanced Purge TechnologyAdvanced Purge TechnologyFor an effective purge
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Traditional purge cannot meet your advanced
process needs
• Some purge gas will either flow directly from inlet to outlet or leak out from door,
some dead zones are created
• Purge gas is difficult to go into the space between wafers, where RH/O2 control is
most needed
1 inlet/1 outlet (front purge)
Dead corner where N2is difficult to fill
• Do you have particle issues?– On top wafer– Back of FOUP
door
FOUP (1 inlet, 1 outlet = front purge)
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FOUP (2 inlet, 2 outlet)
door
Traditional purge cannot meet your advanced
process needs
Improved Design: 2 inlets/2 outlets (rear purge)
FOUP (2 inlet, 2 outlet)
• Flow is smoother → less parOcle trap
• 2 inlets/2 outlets can meet most of the
application need
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High N2
No snorkel =
2 inlets from the back
• N2 will not easily fill the spaces
between wafers
With snorkel
• N2 can fill in the space between
wafers faster
Basic Purge versus Advanced Snorkel Purge
High N2
Snorkel can help drive purge gas into the space between wafers
Low N2
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Preliminary Door open Purge test results
with XCDA® 50 L/min per diffuser
POR Gen-2
Data for slot 13, front left
XCDA® is a trademark of Entegris, Inc.
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Four Port vs. Two Port Door Off Purging
Slot 1
Slot 13
Slot 25
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EBM Material FOUP for High End EBM Material FOUP for High End
ProcessesMaintain the purge results and extend queue time
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EBM Material – Water Absorption Of Different
Polymer Materials
• Materials that can absorb
excessive amounts of water
(PC, PEI or PEEK™), will
heavily impact moisture
recovery in a FOUP 0.30
0.40
0.50
0.60
O A
bso
rpti
on
(%
)
H2O Absorption of Polymers
• As a result, for purge
application, constant or
frequent purge is required if
you want to keep the FOUP
environment dry
0.00
0.10
0.20
PEI PC PEEK/CF EBM
H2O
Ab
sorp
tio
n (
%)
Material
PEEK™ is a trademark of Victrex plc.
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How EBM can help = low moisture and low AMC
• EBM FOUP + purge can effectively extend queue time due to:
– Moisture level can be maintained low (<15%) for more than 18 hrs after purge
– HF/HCl/AMC absorption/desorption is much less in EBM FOUP than PC FOUP
Queue time can be extended and defect level can be kept low
EBM desorbs much less HCl than PC
PC
EBM
Moisture
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M200 SMIF pod updateM200 SMIF pod update
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200 mm SMIF pods EBM and purge optionsStandard 200 SMIF pod developed in 1985 using PC material
M200 style SMIF pod
A200 style SMIF pod
Advanced EBM/CNT Advanced EBM/CNT
dome
EBM Amber dome
(M200 SMIF pod)
E200 purgeable SMIF
pod door
(EBM inner door)
Inlet Outlet
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RH and Purge test setup
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Results – POR (PC) vs. EBM SMIF pod
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• Advanced (EBM)Entegris
Barrier Materials
• Purge options standard or
advanced diffuser
• Purge application using N2,
Summary contamination control solutions EBM material and purge
300 mm FOUP450 mm FOUP
• Purge application using N2,
CDA or XCDA
– Extend low moisture and low
AMC environment control
– Critical process steps/control
wafer environment/yield
– Proposed FOUP and pod
environment control solution
for your high end process 200 mm SMIF pod
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