focused ion beam (fib) techniquefocused ion beam (fib) technique ids optifib system the fib...
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Focused Ion Beam (FIB) Technique
IDS OptiFIBSystem
The FIB Instrument for Front and Backside IC Modifications
Injector(XeF2)
Si Substrate
+
+
IonBeam(Ga+)
Chemistry: Al W SiO2 Si3N4 Polyimide Cu
Dielectric preferential ~1X 12X ~7X ~8X 4-15X
Metal preferential 10-30 ~2X ~3X ~12X
Milled Material:
2pA beam current~5.7µm deep to Si
• Endpoint Detection
• 100nm FIB Placement Accuracy
CAD and IR registration for accurate edit placement
Precision alignment algorithm similar to
lithographic techniques
Fachgebiet HalbleiterbauelementeInstitut für Hochfrequenz und HalbleitersystemtechnologienDipl.-Phys. P. Sadewater, Dr. K. R. Wirth, Dipl.-Ing. S. K. Brahma, Prof. Dr. –Ing. C. Boit
• Gas-Assisted Etching with FIB
Gas-Assisted Etching of Si:
Si + 2 XeF2 -> SiF4 + 2 Xe
XeSiF4
Ion Beam(Ga+)
• Coaxial Photon-Ion microscope
Xenon light source
• FIB Basics
• Like a SEM, but with a Ga+ ion source
• Beam can be rastered in defined patterns
• Material removal by sputtering
• Imaging by capture of charged secondaries
• Ability to selectively deposit and etch
• A FIB Can…
• Mechanical Removal of material by Ga+ Ions
(~30kV), locally controlled (Beam ~ 5 nm),
Beam scan over Structure programmable
• Gas-Assisted Etching
• Gas-Assisted controlled local depositing of
metal conductors and insulators