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X. ZHOU © 1997

E425 – Eng ineerin g Des ign V

TCAD: Process and Device Simulation

2–µm N-well CMOS Process

TSUPREM-4 Results

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TCAD: Process and Device Simulation E425: Engineering Design V

X. ZHOU 2 © 1997

NWELL

dark

ACTIVE

clear

POLY1

clear

METAL

clear

CONTACT

dark

Pattern

Field

---------------------------------------------------------------------------

0. Layout :

$driver tmalayout$step load load name=VWF:0_0.tl2 tl2$step cutlinecutline x1=0 y1=0 x2=18 y2=0scale all xscale=1 yscale=1save tl1 name=layout:0_0.tl1

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X. ZHOU 3 © 1997

1. Start ing wafer :

$step load_mask mask in.file=layout:0_0.tl1$step init_mesh

method dy.oxide=0.1 err.fac=3 mesh grid.fac=3 ly.surf=0.5

dy.surf=0.1 ly.activ=2dy.activ=0.2 ly.bot=10dy.bot=0.5 dx.min=0.2

initialize boron=10resistiv

$step save_structsavefile

out.file=init_proc:0_0.tiftif

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X. ZHOU 4 © 1997

2. Ini t ia l ox idat ion :

$step init_oxidediffusion time=25 temp=750

t.final=1000 f.N2=3 f.O2=0.05diffusion time=5 temp=1000

dryO2diffusion time=50 temp=1000

f.H2=3 f.O2=1.7diffusion time=5 temp=1000


t.final=750 inert$step extr_tox_initextract oxide thicknes x=9

prefix="tox_init "suffix="(0.38) um"out.file=init_proc:0_0.ext

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X. ZHOU 5 © 1997

3. N-wel l photo l i thog raphy :

$step load_mask mask in.file=layout:0_0.tl1$step nwell_maskdeposit photo thick=1expose mask=NWELLdevelop

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X. ZHOU 6 © 1997

4. Oxide and photo resist etch :

$step etch_oxideetch oxide$step strip_photoetch photo all

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X. ZHOU 7 © 1997

5. N-wel l imp lant oxidat ion :

$step implant_oxidediffusion time=20 temp=750



f.H2=3 f.O2=1.7diffusion time=5 temp=1000

dryO2

diffusion time=20 temp=1000t.final=750 inert

$step extr_tox_implextract oxide thicknes x=4

prefix="tox_imps "suffix="(?) um"out.file=nwell:0_0.ext

extract oxide thicknes x=14prefix="tox_impw "suffix="(0.1) um"out.file=nwell:0_0.ext

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X. ZHOU 8 © 1997

6. N-wel l im plant :

$step well_implantimplant phos dose=5e12

energy=150$step extr_Npeakselect z=phosphorusextract silicon val.extr x=14

maximum prefix="Pmax_well "suffix=" cm**-3"out.file=nwell:0_0.ext

$step extr_Nsurf select z=phosphorusextract silicon val.extr x=14

distance=0 prefix="Psur_well" suffix=" cm**-3"out.file=nwell:0_0.ext

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X. ZHOU 9 © 1997

7. N-well dr iv e-in :

$step nwell_drivediffusion time=60 temp=750t.final=1150 f.N2=3 f.O2=0.05

diffusion time=260 temp=1150f.N2=3 f.O2=3.5

diffusion time=60 temp=1150inert

diffusion time=60 temp=1150t.final=750 inert

$step extr_tox_well

extract oxide thicknes x=4prefix="tox_subs "suffix="(?) um"out.file=nwell:0_0.ext

extract oxide thicknes x=14prefix="tox_well "suffix="(0.3) um"out.file=nwell:0_0.ext

$step extr_xj_wellselect z=doping

extract silicon d.extr x=14value=0 prefix="xj_well "suffix="(3.4) um"out.file=nwell:0_0.ext

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X. ZHOU 10 © 1997

8. Oxide etch :

$step strip_oxideetch oxide all$step extr_Npeakselect z=phosphorusextract silicon val.extr x=14

maximum prefix="Pmax_wella "suffix=" cm**-3"out.file=nwell:0_0.ext

$step extr_Nsurf

select z=phosphorusextract silicon val.extr x=14

distance=0 prefix="Psur_wella" suffix=" cm**-3"out.file=nwell:0_0.ext

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X. ZHOU 11 © 1997

9. Pad oxidat ion :

$step pad_oxidediffusion time=20 temp=750



t.final=750 inert$step extr_tox_pad extract oxide thicknes x=9

prefix="tox_pad "suffix="(0.03) um"out.file=field_impl:0_0.ext

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X. ZHOU 12 © 1997

10. Nitr ide deposi t ion :

$step deposit_nitridedeposit nitride thicknes=0.33

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X. ZHOU 13 © 1997

11. Act ive pho to l i thography :

$step load_mask mask in.file=layout:0_0.tl1$step active_maskdeposit photo thick=1expose mask=ACTIVEdevelop

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X. ZHOU 14 © 1997

12. Plasm a ni t r ide etch :

$step etch_nitrideetch nitride

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X. ZHOU 15 © 1997

13. Field implant photo l i thog raphy :

$step pfield_maskdeposit negative photo thick=1expose mask=NWELLdevelop

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X. ZHOU 16 © 1997

14. Field im plant :

$step field_implantimplant boron dose=1.5e13

energy=70

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X. ZHOU 17 © 1997

15. Photoresist remo val :

$step strip_photoetch photo all$step etch_nitrideetch nitride thicknes=0.2$step extr_Npeakselect z=boronextract silicon val.extr x=9

maximum prefix="Bmax_fld "suffix=" cm**-3"

out.file=field_impl:0_0.ext$step extr_Nsurf select z=boronextract silicon val.extr x=9

distance=0 prefix="Bsur_fld "suffix=" cm**-3"out.file=field_impl:0_0.ext

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X. ZHOU 18 © 1997

16. Field (LOCOS) ox idat ion :

$step field_oxidediffusion time=20 temp=750

t.final=950 f.N2=3 f.O2=0.05diffusion time=5 temp=950 dryO2diffusion time=125 temp=1000

f.H2=3 f.O2=1.7diffusion time=5 temp=950 dryO2diffusion time=20 temp=950

t.final=750 inert

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X. ZHOU 19 © 1997

17. Nitr ide and p ad oxide etch :

$step strip_nitrideetch nitride all$step extr_tox_fld extract oxide thicknes x=9

prefix="tox_fld "suffix="(0.65) um"out.file=field_ox:0_0.ext

extract oxide thicknes x=4prefix="tox_padn "

suffix="(?) um"out.file=field_ox:0_0.ext

extract oxide thicknes x=14prefix="tox_padp "suffix="(?) um"out.file=field_ox:0_0.ext

$step etch_oxideetch oxide thicknes=0.032

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X. ZHOU 20 © 1997

18. Sacr i f ic ia l ox idat ion :

$step sacr_oxidediffusion time=20 temp=750



t.final=750 inert$step extr_tox_sacextract oxide thicknes x=4

prefix="tox_sacn "suffix="(0.02) um"out.file=vt_impl:0_0.ext

extract oxide thicknes x=14prefix="tox_sacp "suffix="(0.02) um"out.file=vt_impl:0_0.ext

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X. ZHOU 21 © 1997

19. Thresho ld implant :

$step implantimplant boron dose=2e+12

energy=30$step extr_Npeakselect z=boronextract silicon val.extr x=4

maximum prefix="Bmax_act "suffix=" cm**-3"out.file=vt_impl:0_0.ext

extract silicon val.extr x=9maximum prefix="Bmax_fld "suffix=" cm**-3"out.file=vt_impl:0_0.ext

$step extr_Nsurf select z=boronextract silicon val.extr x=4

distance=0 prefix="Bsur_act "suffix=" cm**-3"out.file=vt_impl:0_0.ext

extract silicon val.extr x=9distance=0 prefix="Bsur_fld "suffix=" cm**-3"out.file=vt_impl:0_0.ext

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X. ZHOU 22 © 1997

20. Sacrif ic ial oxid e etch :

$step etch_oxideetch oxide thicknes=0.022

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X. ZHOU 23 © 1997

21. Gate oxidat ion :

$step gate_oxidediffusion time=20 temp=750



inertdiffusion time=20 temp=950

t.final=750 inert

$step extr_tox_gateextract oxide thicknes x=4

prefix="tox_gn "suffix="(0.03) um"out.file=gate_ox:0_0.ext

extract oxide thicknes x=14prefix="tox_gp "suffix="(0.03) um"out.file=gate_ox:0_0.ext

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X. ZHOU 24 © 1997

22. Poly-Si depo si t ion :

$step deposit_poly1deposit poly thick=0.45

spaces=2 phos=1e20 concentemp=610

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X. ZHOU 25 © 1997

23. Gate defini t io n :

$step load_mask mask in.file=layout:0_0.tl1$step gate_maskdeposit photo thick=1expose mask=POLY1develop

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X. ZHOU 26 © 1997

24. Plasm a polys i l icon etch :

$step etch_poly1etch poly$step strip_photoetch photo all

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X. ZHOU 27 © 1997

25. N + S/D photo l i thography :

$step load_mask mask in.file=layout:0_0.tl1$step nsd_maskdeposit negative photo thick=1expose mask=NWELLdevelop

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X. ZHOU 28 © 1997

26. N + S/D imp lant :

$step N+ s/d_implantimplant arsenic dose=5e+15

energy=130 gaussian$step extr_Npeakselect z=arsenicextract silicon val.extr x=4

maximum prefix="Amax_nsdi "suffix=" cm**-3"out.file=nsd_impl:0_0.ext

$step extr_Nsurf select z=arsenicextract silicon val.extr x=4

distance=0 prefix="Asur_nsdi" suffix=" cm**-3"out.file=nsd_impl:0_0.ext

$step extr_xj_nsd select z=dopingextract silicon d.extr x=4

value=0 prefix="xj_nsdi "

suffix="(0.2) um"out.file=nsd_impl:0_0.ext

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X. ZHOU 30 © 1997

28. N + anneal :

$step N+ s/d_annealdiffusion time=20 temp=750

t.final=950 inertdiffusion time=60 temp=950

inertdiffusion time=20 temp=950

t.final=750 inert$step extr_Npeakselect z=arsenicextract silicon val.extr x=4

maximum prefix="Amax_nsd "suffix=" cm**-3"out.file=nsd_impl:0_0.ext

$step extr_Nsurf select z=arsenicextract silicon val.extr x=4

distance=0 prefix="Asur_nsd "suffix=" cm**-3"out.file=nsd_impl:0_0.ext

$step extr_xj_nsd

select z=dopingextract silicon d.extr x=4value=0 prefix="xj_nsd "suffix="(0.35) um"out.file=nsd_impl:0_0.ext

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X. ZHOU 31 © 1997

29. P + S/D photol i tho graphy :

$step load_mask mask in.file=layout:0_0.tl1$step psd_maskdeposit photo thick=1expose mask=NWELLdevelop

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X. ZHOU 32 © 1997

30. P + S/D imp lant :

$step P+ s/d_implantimplant boron dose=5e+15

energy=40$step extr_Npeakselect z=boronextract silicon val.extr x=14

maximum prefix="Bmax_psd "suffix=" cm**-3"out.file=psd_impl:0_0.ext


distance=0 prefix="Bsur_psd "suffix=" cm**-3"out.file=psd_impl:0_0.ext

$step extr_xj_psd select z=dopingextract silicon d.extr x=14

value=0 prefix="xj_psd "

suffix="(0.55) um"out.file=psd_impl:0_0.ext

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X. ZHOU 34 © 1997

32. PSG depos i t ion and dens i f icat ion :

$step deposit_psg deposition oxide thicknes=0.7

spaces=4 phos=1e20 concen$step densify_psg diffusion time=10 temp=750

t.final=950 inertdiffusion time=5 temp=950 dryO2diffusion time=20 temp=950 f.H2=3

f.O2=1.7diffusion time=5 temp=950 dryO2diffusion time=10 temp=950

t.final=750 inert$step extr_tox_psg extract oxide thicknes x=9

prefix="tox_psgf " suffix="(?) um"out.file=psg_dep:0_0.ext

extract oxide thicknes x=4prefix="tox_psgn " suffix="(?) um"out.file=psg_dep:0_0.ext

extract oxide thicknes x=14prefix="tox_psgp " suffix="(?) um"out.file=psg_dep:0_0.ext

$step extr_xjselect z=dopingextract silicon d.extr x=4 value=0

prefix="xj_nch " suffix="(0.35)um" out.file=psg_dep:0_0.ext

extract silicon d.extr x=14 value=0prefix="xj_pch " suffix="(0.6) um"out.file=psg_dep:0_0.ext

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X. ZHOU 35 © 1997

33. Contact photo l i thography :

$step load_mask mask in.file=layout:0_0.tl1$step contact_maskdeposit photo thick=1expose mask=CONTACTdevelop

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X. ZHOU 36 © 1997

34. Contact etch :

$step etch_contactetch oxide$step strip_photoetch photo all

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X. ZHOU 37 © 1997

35. Metal l izat ion :

$step deposit_aldeposit aluminum thick=0.6

spaces=3

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X. ZHOU 38 © 1997

36. Metal photo l i tho graphy :

$step load_mask mask in.file=layout:0_0.tl1$step metal_maskdeposit photo thick=1expose mask=METALdevelop

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X. ZHOU 39 © 1997

37. Metal etch :

$step etch_metaletch aluminum $step strip_photoetch photo all$step print_layersselect z=boronprint.1d x.val=4 layersselect z=dopingprint.1d x.val=4 layers

$step extr_Npeakselect z=boronextract silicon val.extr x=4

maximum prefix="Bmax_nch "suffix=" cm**-3"out.file=metal:0_0.ext


distance=0 prefix="Bsur_nch "

suffix=" cm**-3"out.file=metal:0_0.ext

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X. ZHOU 40 © 1997

38. Trunc ate/ref lect Nmo s :

$step truncate_nmosstructure truncate x=8 right$step reflect_nmosstructure reflect left$step def_electrodeelectrode name=Source x=-4 y=0electrode name=Gate x=0 y=0electrode name=Drain x=4 y=0electrode name=Subs bottom

$step save_nmossavefile

out.file=nmos_md:0_0.md medici poly.ele elec.bot

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X. ZHOU 41 © 1997

39. Trunc ate/ref lect Pmo s :

$step truncate_pmosstructure truncate x=11 left$step reflect_pmosstructure reflect right$step truncate_bottomstructure truncate y=3 bottom $step def_electrodeelectrode name=Source x=22 y=0electrode name=Gate x=18 y=0

electrode name=Drain x=14 y=0electrode name=Subs bottom $step save_pmossavefile

out.file=pmos_md:0_0.md medici poly.ele elec.bot

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