first proton irradiation of cms sensors w. de boer, a. dierlamm, a. furgeri, e. grigoriev, f....
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TRANSCRIPT
![Page 1: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/1.jpg)
First Proton Irradiation of CMS Sensors
W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann,
F. Hauler, L. Jungermann, Ch. Piasecki
![Page 2: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/2.jpg)
Some facts to remember for the next slides
• Data is preliminary• Measurements and evaluation was done in
4 days only including the weekend some plots can be arranged in a better way and the data is incomplete! (sorry!!!)
• The biasing was done with conductive rubber residuals on AC pads sometimes gives contact problems
• We used the testing of the teststructures to train personal
• After irrad.: Strip scan for ST at Vbias=900V (it was stable)
• The evaluation is not complete!
![Page 3: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/3.jpg)
Materials
• Hamamatsu Full Sensor (W6b 4919-39)Thickness: 500 mResistivity: 4.6 kcm
• Hamamatsu teststructures (same batch no. 35-41)– Have to look up all other parameters according
to the HPK tables
• ST Full Sensor (04439218)Thickness: 500 mResistivity: 5.1 kcm
![Page 4: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/4.jpg)
Simulated LHC conditions with respect to surface damage!
Bia s ring--> G ND
Rp o ly
DC
ACSho rt a ll DC to b ia s (G ND)
Ba c kp la ne to + Vb ia s
Rp o ly
DC
C C
AC
He re we ne e d p o te ntia l like in LHC 1M a t 1 A = 1V
Rp o lyC urre nt a fte r irra d
Vbias
![Page 5: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/5.jpg)
Irrad. Assembly
![Page 6: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/6.jpg)
IV and CV on both Sensors
0 50 100 150 200 250 300 350 400 450 500 550 600
0,00
0,05
0,10
0,15
0,20
0,25
0,30
0,35
0,40 0 50 100 150 200 250 300 350 400 450 500 550 600
0,1
1
10
IV and CV on FS
Hamamatsu ST
Cap
acita
nce-0
.5
Bias Voltage [V]
Hamamatsu STLe
akag
e C
urre
nt [
A]
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Strip Parameters on Ham. Sensor
0 100 200 300 400 500 600
0,2
0,4
0,6
0,8
1,0
1,2
1,4
0 100 200 300 400 500 6001,0
1,5
2,0
2,5
3,0
0 100 200 300 400 500 600
460
480
500
520
540
560
580
600
0 100 200 300 400 500 6003,10
3,15
3,20
3,25
3,30
Ileak [nA] Rpoly [M]
Ccquasi [pF]
Hamamatsu Sensor 39
Cint [pF]
![Page 8: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/8.jpg)
Interstrip capacitance of HPK sensor (1 neighbour)
100 fF
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Strip Parameters on ST Sensor
0 100 200 300 400 500 600
1
10
100
1000
0 100 200 300 400 500 6001,0
1,2
1,4
1,6
1,8
2,0
2,2
2,4
0 100 200 300 400 500 600
560
580
600
620
640
660
680
700
0 100 200 300 400 500 6003,40
3,45
3,50
3,55
3,60
Ileak [nA]
Rpoly [M]
Ccquasi [pF]
ST Sensor 39218
Cint [pF]
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IV and CV on Ham. TS
0 50 100 150 200 250
0
1x1019
2x1019
3x1019
4x1019
5x1019
6x10190 100 200 300 400 500
0
10
20
30
40
50Hamamatsu TS - MinisensorIV and CV before Irradiation H35
H36 H37 H38 H39 H40 H41
Cap
acita
nce-2
Bias Voltage [V]
Leak
age
Cur
rent
[nA
]
![Page 11: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/11.jpg)
Strip Parameters on Ham. TS
0 20 40 60 80 100 120 140
0,01
0,1
1
10
0 20 40 60 80 100 120 140
1,6
1,8
2,0
2,2
2,4
0 20 40 60 80 100 120 14050
60
70
80
90
100
110
120
0 20 40 60 80 100 120 1401,4
1,5
1,6
1,7
1,8
Hamamatsu Teststructures - Minisensorbefore Irradiation
H35 H36 H37 H38 H39 H40 H41
Le
aka
ge
Cu
rre
nt [
nA
]
Bia
s R
esi
sta
nce
[M]
Co
up
ling
Ca
pa
cita
nce
[pF
]
Inte
rstr
ip C
ap
aci
tan
ce [p
F]
![Page 12: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/12.jpg)
Comparison: Diode vs. Minisensor
0 50 100 150 200 250 300
0,0
5,0x1019
1,0x1020
1,5x1020
2,0x1020
2,5x1020
3,0x1020
CV on TS H39 - Diode and Minisensor
Diode Minisensor
Ca
pa
cita
nce
-2
Bias Voltage [V]
![Page 13: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/13.jpg)
High fluence (2.5x10^14 neq/cm2)
• FS Ham.@ 1V (AC & bias)
• TS H39 @ 1V
• TS H38 @ 12V
• TS H37 @ 100V
• TS H35 & H36 @ 0V
• TS H40 @ 100V (only bias)
FullSensor Ham.
Teststruc. 37, 38, 39
Teststruc. 35, 36, 40
Ni foil
Proton beam
33MeV
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Low fluence (1,5x10^14 neq/cm2)
• FS ST @ 1V• TS ST26 @ 1V• TS H41 @ 0V
FS ST
TS H41, ST26
Ni foil
Proton beam
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Fluence estimate (preliminary)
• Leakage current on TS H39 diode at -8±1°C:I(-8°C) = 5 A
• Leakage current at 20°C (I(T)=I0*T1.5 *e-1.2eV/kT):I(20°C)= (860 ± 190)A
• Volume of diode is 72 mm3
=> I(20°C)/V = (11.9 ± 2.6)mA/cm3
=> Fluence is about (3.0±0.6)e14 neq/cm2
(=4e-17A/cm)
• Leakage current on TS H41I(-9°C) = 1.5 A
• Fluence is about (1.1±0.3)e14 neq/cm2
Hamamatsu:
ST:
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Leakage Current on Ham. Diode after Irrad. with high Fluence
0 200 400 600 800 1000
0,0
1,0x10-6
2,0x10-6
3,0x10-6
4,0x10-6
5,0x10-6
6,0x10-6
7,0x10-6
0 200 400 600 800 10001E-11
1E-10
1E-9
1E-8
1E-7
1E-6
1E-5
Irradiated, annealed, -8°C Non irradiated, RT
Hamamatsu TS 39 - Diode
Le
aka
ge
Cu
rre
nt [
A]
Voltage [V]
![Page 17: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/17.jpg)
Leakage Current on Ham. Diode after Irradiation with low Fluence
0 200 400 600 800 1000
0,0
0,5
1,0
1,5
2,0
2,5
Hamamatsu TS 41 - Diode
Before After irrad. (low fluence) and annealing
Le
aka
ge
Cu
rre
nt [A
]
Bias Voltage [V]
![Page 18: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/18.jpg)
CV on Ham. Diode after Irradiation
0 200 400 600 800 10001,5x1020
2,0x1020
2,5x1020
3,0x1020
Hamamatsu TS 39 - Diode
Before After IrradiationC
ap
aci
tan
ce-2
Bias Voltage [V]
![Page 19: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/19.jpg)
CV on Sensors after Irradiation
0 200 400 600 800 1000 1200
0,00
0,05
0,10
0,15
0,20
0,25
0,30
0,35
CV(1kHz) on both Sensors at -10°C
Ham. Ham. irrad. (high fluence) ST ST irrad. (low fluence)
1/C
2
Bias Voltage [V]
![Page 20: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/20.jpg)
IV for Sensors after Irradiation
0 200 400 600 800 1000 1200
0,0
0,5
1,0
1,5
2,0IV after Irradiation
Hamamatsu -12°C (high fluence) ST -10°C (low fluence)
Le
aka
ge
Cu
rre
nt [
mA
]
Bias Voltage [V]
![Page 21: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/21.jpg)
Coupling Capacitance on ST Sensor after Irradiation
0 100 200 300 400 500 600300
400
500
600
700
800 ST Sensor
Before After Irradiation (-10°C)
Co
up
ling
Ca
pa
cita
nce
[p
F]
![Page 22: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/22.jpg)
Poly Resistance on ST Sensor after Irradiation
0 100 200 3001,0
1,5
2,0
2,5
3,0 ST Sensor
Before After Irradiation (-10°C)
Po
ly R
esi
sta
nce
[M]
![Page 23: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/23.jpg)
Leakage Current ST FS after irrad.
1-4nA before irrad.
![Page 24: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/24.jpg)
Other Paramters on ST Sensor
• Interstrip Capacitance (one neighbour):Before Irradiation 3.5 pFAfter Irradiation 3.6 pF
• Interstrip Resistance:Before Irradiation > 10G– No definite numbers after irrad
![Page 25: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/25.jpg)
Strip Leakage Current on Ham. Sensor after Irradiation
0 50 100 150 200 2500,1
1
10
100
1000
10000 Hamamatsu FS 39
Before After irradiation
Str
ip L
ea
kag
e C
urr
en
t [n
A]
![Page 26: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/26.jpg)
Poly Resistance on Ham. Sensor after Irradiation
60 80 100 120 140 160 180 200 220 240 260 280 3001,0
1,5
2,0
2,5
3,0 Hamamatsu Sensor 39
Before After Irradiation (-10°)
Po
ly R
esi
sta
nce
[M]
300V, -13°C 160V
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Interstrip Capacitance (one neighbour) vs. Bias Voltage
after Irradiation
0 200 400 600 800 1000
3,5
4,0
4,5
5,0
5,5
6,0Hamamatsu FS - C
int on strip 335
Cin
t [p
F]
Bias Voltage [V]
![Page 28: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/28.jpg)
Strip Leakage Current on TS after Irradiation
0 20 40 60 80 100 120 1400,01
0,10
1,00
10,00
100,00
1000,00
10000,00Strip Leakage Current on TS H39
Before After irrad. and annealing
Str
ip L
ea
kag
e C
urr
en
t [n
A]
![Page 29: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/29.jpg)
Coupling Capacitance on TS after Irradiation
0 20 40 60 80 100 120 140
20
40
60
80
100
120
Coupling Capacitance on TS H39
Before After irrad. and annealing
Co
ulp
ling
Ca
pa
cita
nce
[pF
]
![Page 30: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/30.jpg)
Poly Resistance on TS after Irradiation
0 20 40 60 80 100 120 1401,0
1,5
2,0
2,5
3,0 Hamamatsu TS 41 - Minisensor
Before After Irradiation (-10°C)
Po
ly R
esi
sta
nce
[M]
![Page 31: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/31.jpg)
Interstrip Capacitance on TS after Irradiation (2 neighbours)
0 10 20 30 40 50 60
1,0
1,2
1,4
1,6
1,8
2,0
Interstrip Capacitance on TS H39
Before After irrad. and annealing
Inte
rstr
ip C
ap
aci
tan
ce [p
F]
Some bad contacts due to residuals of conductive rubber!?!?!
![Page 32: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/32.jpg)
Interstrip Resistance on TS after Irradiation (very preliminary)
0 10 20 30 40 50 60
-0,2
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
Interstrip Resistance on TS H39
Before irradiation >10G
After irrad. and annealing
Inte
rstr
ip R
esi
sta
nce
[G]
![Page 33: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/33.jpg)
Depletion Voltage and Fluence
0 50 100 150 200 250 300
0,0
2,0x1019
4,0x1019
6,0x1019
8,0x1019
1,0x10200 50 100 150 200 250 300
0,0
2,0x1019
4,0x1019
6,0x1019
8,0x1019
1,0x10200 50 100 150 200 250 300
0
1x1017
2x1017
3x1017
4x1017
5x1017
150V
No Fluence
Bias Voltage [V]
CV on Ham. TS - Minisensor
180V
Low Fluence
Ca
pa
cita
nce
-2
220V
High Fluence
![Page 34: First Proton Irradiation of CMS Sensors W. de Boer, A. Dierlamm, A. Furgeri, E. Grigoriev, F. Hartmann, F. Hauler, L. Jungermann, Ch. Piasecki](https://reader031.vdocuments.us/reader031/viewer/2022032521/56649d605503460f94a411fc/html5/thumbnails/34.jpg)
Conclusion: Procedure for the production
• Evaluation on minisensor and FS only
• Irradiation with protons is feasible with small bias voltage near to final LHC condition
• We have to evaluate the irrad. sensor with higher Vbias
• The IQC in Karlsuhe is ready with some possible improvements, learned at this system test level
• Some additonal measurments and x-ray studies are ongoing and helpfull for the surface damage understanding but are not
essential for the approval of an ingot!
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End of irradiation
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„I-t“
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Backside of HPK sensor
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First GCD measurements
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CMS-GCD-StructuresDiodeGateDiodeDiode
GateDiodeDiodeDiode
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Measurement of the CMS square GCD structure and Rose
structure in literatureHamamatsu No.00045
1,00E-11
1,50E-11
2,00E-11
2,50E-11
3,00E-11
3,50E-11
4,00E-11
4,50E-11
5,00E-11
5,50E-11
6,00E-11
-35,00 -30,00 -25,00 -20,00 -15,00 -10,00 -5,00 0,00
Gate Voltage (V)
Bia
s C
urr
en
t (A
) 1 V
6 V
11 V
16 V
21 V
Bias Voltage
Some non-understood points.
KA
Rose
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GCD after proton irradiationHamamatsu No.00045 irradiated and annealed
1,00E-11
1,00E-07
2,00E-07
3,00E-07
4,00E-07
5,00E-07
6,00E-07
7,00E-07
8,00E-07
9,00E-07
-3,50E+01 -2,50E+01 -1,50E+01 -5,00E+00 5,00E+00 1,50E+01 2,50E+01 3,50E+01 4,50E+01 5,50E+01 6,50E+01
Gate Voltage (V)
Bia
s C
urr
en
t (A
) 1 V
6 V
11 V
16 V
21 V
Bias Voltage
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GCD Summary
• Proton irradiation has shown that bulk leakage current is much higher than interface currents at least at full dose and is therefore negligible. (see
also NIM A444 (2000) 605-613) What about effects of type inversion?
• However further studies at Karlsruhe are possible by using the KA X-Ray source.
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Bias contacts