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    ELECTRICALVALIDATION FOR

    DDR IO INTERFACE

    Presented byDipak Prakash Bankar

    09VL07F

    5/20/2011 1M. Tech. VLSI Design NITK Surathkal.

    Prof. M. S. Bhat

    NITK Surathkal

    Under the Guidance

    ofBhide Amruta A

    Intel Technology India Pvt. Ltd.

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    5/20/2011 2M. Tech. VLSI Design NITK Surathkal.

    Agenda :

    What is EV In general?

    Importance.

    What is DDR Interface?

    Brief About DDR RAM.

    Evolution Of DDR.

    DDR3 Signals.

    DDR3 protocol.

    EV for DDR.

    Flyby Topology.

    Delay Locked Loop

    Characterization of DLL.

    References.

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    5/20/2011 M. Tech. VLSI Design NITK Surathkal. 3

    What is EV in general?

    It comes under post silicon Validation. Done over Process, Voltage and

    Temperature variations.

    Done at Platform Level Component Level

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    Importance.

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    What is DDR interface?

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    Memory

    Slots

    PCIe/AG

    P(Graphi

    cs)

    APM/

    ACPI

    PCI/

    PCIe

    Bus

    AC97/HD

    (AUDIO)

    SATA/

    USB/

    LAN

    PORTS

    HDMIOther

    Devices

    DDRInterface

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    What is DDR interface?

    DDR

    Slots

    PCIe/AG

    P(Graphics)

    APM/

    ACPI

    PCI/

    PCIe

    Bus

    AC97/HD

    (AUDIO)

    SATA/

    USB/

    LAN

    PORTS

    HDMIOther

    Devices

    Two Dieone

    package

    DDRInterface

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    DDR Slots

    PCIe/AG

    P(Graphics)

    APM/

    ACPI

    PCI/

    PCIe

    Bus

    SATA/

    USB/

    LAN

    PORT

    S

    HDMI

    Other

    Devices

    DDRInterface

    What is DDR interface?

    VGA

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    Evolution of DDR. DDR3 Signals.

    DDR3 protocol.

    READWRITE

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    Brief about DDR(RAM).

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    Evolved from SDR

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    Evolution of DDR.

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    DDR1.

    Additional

    Stubs andStub Lengths

    Evolution of DDR.

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    DDR2.

    Additional

    Stubs andStub Lengths

    Evolution of DDR.

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    DDR3.

    Evolution of DDR.

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    DDR3 Signals Groups.

    Command group WE# :Write Enable RAS# : Row Address Select

    CAS# : Column Address Select

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    DDR3 Signals Groups.

    Clock CK/CK# :- Differential.

    - Free running.

    - all data, address, command and control signals are sampled on

    the crossing of clock.

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    DDR3 Signals Groups.

    Control group CKE : Clock Enable- Activate and deactivate internal clock signals and device input

    buffers and output drivers.

    - CKE LOW provides Pre-charge Power-Down and Self

    Refresh operation.

    CS : Chip Select

    - CS provides for external

    Rank selection on systems with multiple Ranks.

    - All commands are masked when CS is registered HIGH.

    ODT : On Die Termination- ODT (registered HIGH) enables termination resistance internal to

    the DDR3 SDRAM.

    - Allows the DRAM to turn on/off termination resistance for each DQ,

    DQS, DQS#.

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    DDR3 Signals Groups.

    Data group DQS/DQS# [7:0] : Data Strobe- Differential.

    - Acts as clock for data.

    - Starts from Tristate.

    DQ[63:0]- Single ended Bi-directional.

    - Center aligned w.r.t. DQS during write.

    - Edge aligned w.r.t. DQS during read.

    - 1 DQS is associated with each 8-bit data(DQ)

    DM[7:0] :Write Data Mask

    - 1 for each 8-bit data (DQ).

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    DDR3 Protocol.

    READ

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    EV For DDR.

    Platform Level - Signal IntegrityAddresses two concerns in the electrical design aspects

    - the timing and

    - the quality of the signal

    The goal of signal integrity analysis is to ensure reliable high-speed datatransmission.

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    EV For DDR.

    Platform Level - Signal IntegrityMain issues of SI

    Reflection Noise Due to impedance mismatch, stubs, vias and other interconnectdiscontinuities.

    Crosstalk Noise Due to electromagnetic coupling between signal traces andvias.

    Power/Ground Noise Due to paracitic of the power/ground delivery system duringdrivers simultaneous switching output (SSO). It is sometimes also

    called Ground Bounce, Delta-I Noise or Simultaneous SwitchingNoise (SSN).

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    EV for DDR.

    Platform Level - Signal Integrity1. Clk to DQS Skew

    2. Clk VIX

    3. Clock Jitter characterization

    4. Dq-Dqs timing

    5. Clk-Control timing

    6. Clk-Command timing

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    EV for DDR.

    Platform Level - Signal Integrity1. Clk to DQS Skew

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    EV for DDR.

    Platform Level - Signal Integrity2. Clk VIX

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    EV for DDR.

    Platform Level - Signal Integrity2. Clk VIX

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    EV for DDR.

    Platform Level - Signal Integrity4. Dq-Dqs timing

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    EV for DDR.

    Platform Level - Signal Integrity5. Clk-Control(CS#) timing

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    EV for DDR.

    Platform Level - Signal Integrity6. Clk-Command (WE#) timing

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    EV for DDR.

    Component Level Characterization Of AC timings

    - Slew Rate

    - Duty Cycle- Noise Margins

    - Set up and Hold check

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    EV For DDR.

    Process Temperature

    (C)

    Voltage

    (V)

    Board Component (Processor)

    LOW-Z Slow Low Low

    High-Z Fast High High

    Typical typical Typical Typical

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    Flyby topology.

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    Flyby topology.

    Clock gets skewed

    DQS should be skewed

    accordingly

    Uses programmable Delay

    element known as Delay LockedLoop(DLL).

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    Delay Locked Loop(DLL)

    Phase

    Detector Control

    Delay Line

    Fast/Slow

    Clk in

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    Characterization of DLL(My

    Work). Code Vs Delay

    0

    100

    200

    300

    400

    500

    600

    700

    800

    0 10 20 30 40 50 60 70

    Code vs Delay

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    DNL

    Characterization of DLL.

    -15

    -10

    -5

    0

    5

    10

    15

    0 10 20 30 40 50 60 70

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    Characterization of DLL. INL

    -30

    -25

    -20

    -15

    -10

    -5

    0

    5

    10

    0 10 20 30 40 50 60 70

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    ReferencesJEDEC

    www.csee.umbc.edu/research/vlsi/reports/si_chapter.pdfClocking in Modern VLSI System by Thucydides Xanthopoulos, Spinger.

    Intel Internal Reference Documents

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