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FDS6890A

FDS6890A Rev. C

FDS6890ADual N-Channel 2.5V Specified PowerTrenchTMMOSFET

General Description

These N-Channel 2.5V specified MOSFETs areproduced using Fairchild Semiconductor's advancedPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainlow gate charge for superior switching performance.

Features

7.5 A, 20 V. RDS(ON)

= 0.018 @ VGS

= 4.5 V

RDS(ON)

= 0.022 @ VGS

= 2.5 V.

Low gate charge (23nC typical).

Fast switching speed.

High performance trench technology for extremelylow R

DS(ON).

High power and current handling capabil ity.

1999 Fairchild Semiconductor Corporation

Absolute Maximum Ratings TA=25 oC unless otherwise noted

Symbol Parameter Ratings UnitsVDSS Drain-Source Voltage 20 V

VGSS Gate-Source Voltage 8 V

ID Drain Current - Continuous (Note 1a) 7.5 A

- Pulsed 20

Power Dissipation for Dual Operation 2.0

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1.0

PD

(Note 1c) 0.9

W

TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 C

Thermal CharacteristicsR

JA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W

RJC

Thermal Resistance, Junction-to-Case (Note 1) 40 C/W

90

Package Marking and Ordering InformationDevice Marking Device Reel Size Tape Width Quantity

FDS6890A FDS6890A 13 12mm 2500 units

Applications

DC/DC converter

Motor drives

November 1999

1

5

7

8

2

3

4

6D1

SO-8

D2D2

D1

S1

S2G1

G2

pin 1

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FDS6890A

FDS6890A Rev. C

Notes:

1. RJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

surface of the drain pins. RJC

is guaranteed by design while RCA

is determined by the user's board design.

Scale 1 : 1 on letter size paper

a) 78C/W whenmounted on a 0.5 in2

pad of 2 oz. copper.

b) 125C/W whenmounted on a 0.02 in2

pad of 2 oz. copper.

c) 135C/W whenmounted on a minimum pad.

Electrical Characteristics TA= 25 C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS= 0 V, ID= 250 A 20 V

BVDSSTJ

Breakdown Voltage TemperatureCoefficient

ID= 250 A, Referenced to 25C 14 mV/C

IDSS Zero Gate Voltage Drain Current VDS= 16 V, VGS= 0 V 1 A

IGSSF Gate-Body Leakage Current,Forward

VGS= 8 V, VDS= 0 V 100 nA

IGSSR Gate-Body Leakage Current,Reverse

VGS= -8 V, VDS= 0 V -100 nA

On Characteristics (Note 2)VGS(th) Gate Threshold Voltage VDS= VGS, ID= 250 A 0.5 0.8 1.5 V

VGS(th)TJ

Gate Threshold VoltageTemperature Coefficient

ID= 250 A, Referenced to 25C -3.5 mV/C

RDS(on) Static Drain-SourceOn-Resistance

VGS= 4.5 V, ID=7.5 A

VGS= 4.5 V, ID=7.5 A, TJ =125CVGS= 2.5 V, ID=6.5 A

0.0130.0210.016

0.0180.0340.022

ID(on) On-State Drain Current VGS= 10 V, VDS= 5 V 20 AgFS Forward Transconductance VDS= 5 V, ID= 7.5 A 35 S

Dynamic CharacteristicsCiss Input Capacitance 2130 pF

Coss Output Capacitance 545 pF

Crss Reverse Transfer Capacitance

VDS= 10 V, VGS= 0 V,f = 1.0 MHz

270 pF

Switching Characteristics (Note 2)td(on) Turn-On Delay Time 13 24 ns

tr Turn-On Rise Time 26 42 ns

td(off) Turn-Off Delay Time 65 90 ns

tf Turn-Off Fall Time

VDD= 10 V, ID= 1 A,

VGS= 4.5 V, RGEN= 6

23 37 ns

Qg Total Gate Charge 23 32 nCQgs Gate-Source Charge 3.2 nC

Qgd Gate-Drain Charge

VDS= 10 V, ID= 7.5 A,VGS= 4.5 V,

4.4 nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current 1.3 A

VSD Drain-Source Diode ForwardVoltage

VGS= 0 V, IS= 1.3 A (Note 2) 0.65 1.2 V

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FDS6890A

FDS6890A Rev. C

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance VariationwithTemperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Currentand Temperature.

Typical Characteristics (continued)

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

RDS(ON),NORMALIZED

DRAIN-SOURCEON-RESISTANCE ID= 7.5A

VGS= 4.5V

0.0001

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2

VSD, BODY DIODE VOLTAGE (V)

IS,REVERSEDRAIN

CURRENT(A)

TJ=125oC

25oC

-55oC

VGS=0

0

0.01

0.02

0.03

0.04

0.05

1 2 3 4 5

VGS, GATE TO SOURCE VOLTAGE (V)

RDS(ON),ON-RESISTANCE(OHM) ID=3.8A

TA= 125oC

TA= 25oC

0

6

12

18

24

30

0.5 1 1.5 2 2.5 3

VGS, GATE TO SOURCE VOLTAGE (V)

ID,DRAIN

CURRENT(A)

TA= -55oC 25

oC

125oC

VDS= 5V

0.8

1

1.2

1.4

1.6

1.8

0 5 10 15 20 25 30

ID, DRAIN CURRENT (A)

RDS(ON),NORMALIZED

DRAIN-SOURCEON-RESISTANCE

VGS=1.8V

3.5V3.0V

2.0V

2.5V

4.5

0

6

12

18

24

30

0 0.5 1 1.5 2 2.5 3

VDS, DRAIN-SOURCE VOLTAGE (V)

ID,DRAIN-SOURCECURRENT(

A)

VGS=4.5V

2.0V

1.8V

1.5V

2.5V

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FDS6890A Rev. C

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

Typical Characteristics (continued)

0.01 0.1 0.5 10 50 100 3000

5

10

15

20

25

30

SINGLE PULSE TIME ( SEC)

POWER(W)

SINGLE PULSE

R =135 C/WT = 25C

JA

A

Figure 11. Transient Thermal Response Curve.Thermal characterization performed using the conditions described in Note 1c.Transient themal response will change depending on the circuit board design.

0.0001 0.001 0.01 0.1 1 10 100 3000.00 1

0.00 2

0.00 5

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (se c)

TRANS

IENTTHERMALRESISTANCE

r(t),NORMALIZEDEFFECTIVE

1

S in g l e P ul s e

D =0.5

0. 1

0.0 5

0.0 2

0.0 1

0.2

D u t y C y cl e, D = t /t1 2

T - T = P * R (t)JAAJ

P(pk)

t1t2

R ( t) = r( t) * RR = 135 C/W

JAJA

JA

0.01

0.1

1

10

100

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

ID,DRAIN

CURRENT(A)

DC10s

1s

100ms

10ms

1ms100s

RDS(ON) LIMIT

VGS= 10V

SINGLE PULSE

RJA= 135oC/W

TA= 25oC

0

800

1600

2400

3200

0 4 8 12 16 20

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE(pF)

CISS

COSS

CRSS

f = 1 MHz

VGS= 0 V

0

1

2

3

4

5

0 6 12 18 24 30

Qg, GATE CHARGE (nC)

VGS,GATE-SOURCEVOLTAGE(V)

ID= 7.5A

VDS= 5V10V

15V

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SOIC(8lds) PackagingConfiguration: Figure 1.0

ComponentsLeader Tape1680mm minimum or210 empty pockets

Trailer Tape640mm minimum or80 empty pockets

SOIC(8lds) Tape Leader and TrailerConfiguration: Figure 2.0

Cover Tape

Carrier Tape

Note/Comments

Packaging Option

SOIC (8lds) Packaging Information

Standard(no flow code)

L86Z F011

Packaging type

Reel Size

TNR

13" Dia

Rail/Tube

-

TNR

13" Dia

Qty per Reel/Tube/Bag 2,500 95 4,000

Box Dimension (mm) 343x64x343 530x130x83 343x64x343

Max qty per Box 5,000 30,000 8,000

D84Z

TNR

7" Dia

500

184x187x47

1,000

Weight per unit (gm) 0.0774 0.0774 0.0774 0.0774

Weight per Reel (kg) 0.6060 - 0.9696 0.1182

F63TN Label

ESD Label

343mm x 342mm x 64mm

Standard Intermediate box

ESD Label

F63TNR Label sampleF63TNLabel

LOT: CBVK741B019

FSID: FDS9953A

D/C1: D9842 QTY1: SPEC REV:

SPEC:

QTY: 2500

D/C2: QTY2: CPN:N/F: F (F63TNR)3

F852NDS9959

SOIC-8 Unit Orientation

F852

NDS

9959

Pin 1

Static DissipativeEmbossed Carrier Tape

F63TNRLabel

Antistatic Cover TapeESD Label

ELECTROSTATICSENSITIVE DEVICES

DO NOT SHIPOR STORE NEAR STRONG ELECTROSTATICELECTROMAGNETIC,MAGNETIC OR RADIOACTIVE FIELDS

TNR DATE

PT NUMBER

PEEL STRENGTHMI N_________ _____gms

MAX_____________gms

CustomizedLabel

Packaging Description:SOIC-8 parts are shipped in tape. The carrier tape ismade from a dissipative (carbon filled) polycarbonateresin. The cover tape is a multilayer film (Heat ActivatedAdhesive in nature) primarily composed of polyester film,adhesive layer, sealant, and anti-static sprayed agent.These reeled parts in standard option are shipped with2,500 units per 13" or 330cm diameter reel. The reels aredark blue in color and is made of polystyrene plastic (anti-static coated). Other option comes in 500 units per 7" or177cm diameter reel. This and some other options arefurther described in the Packaging Information table.

These full reels are individually barcode labeled andplaced inside a standard intermediate box (illustrated infigure 1.0) made of recyclable corrugated brown paper.One box contains two reels maximum. And these boxesare placed inside a barcode labeled shipping box whichcomes in different sizes depending on the number of partsshipped.

F852

NDS

9959

F852

NDS

9959

F852

NDS

9959

SO-8 Tape and Reel Data and Package Dimensions

July 1999, Rev. B

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1998 Fairchild Semiconductor Corporation

Dimensions are in millimeter

Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

SOIC(8lds)(12mm)

6.50+/-0.10

5.30+/-0.10

12.0+/-0.3

1.55+/-0.05

1.60+/-0.10

1.75+/-0.10

10.25min

5.50+/-0.05

8.0+/-0.1

4.0+/-0.1

2.1+/-0.10

0.450+/-0.150

9.2+/-0.3

0.06+/-0.02

P1A0 D1

P0

F

W

E1

D0

E2B0

Tc

WcK0

T

Dimensions are in inches and millimeters

Tape SizeReel

OptionDim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

12mm 7" Dia7.00177.8

0.0591.5

512 +0.020/-0.00813 +0.5/-0.2

0.79520.2

2.16555

0.488 +0.078/-0.00012.4 +2/0

0.72418.4

0.469 0.60611.9 15.4

12mm 13" Dia13.00330

0.0591.5

512 +0.020/-0.00813 +0.5/-0.2

0.79520.2

7.00178

0.488 +0.078/-0.00012.4 +2/0

0.72418.4

0.469 0.60611.9 15.4

See detail AA

Dim A

max

13" Diameter Option

7"Diameter Option

Dim AMax

See detail AA

W3

W2 max Measured at Hub

W1 Measured at Hub

Dim N

Dim Dmin

Dim C

B Min

DETAIL AA

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum component rotation

0.5mmmaximum

0.5mmmaximum

Sketch C (Top View)

Component lateral movement

Typicalcomponentcavitycenter line

20 deg maximum

Typicalcomponentcenter line

B0

A0

Sketch B (Top View)

Component Rotation

Sketch A (Side or Front Sectional View)

Component Rotation

User Direction of Feed

SOIC(8lds) Embossed Carrier TapeConfiguration: Figure 3.0

SOIC(8lds) Reel Configuration: Figure 4.0

SO-8 Tape and Reel Data and Package Dimensions, continued

July 1999, Rev. B

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7/8

SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0774

SO-8 Tape and Reel Data and Package Dimensions, continued

September 1998, Rev. A

9

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TRADEMARKS

ACExBottomless

CoolFETCROSSVOLT

E2CMOSTM

FACT

FACT Quiet Series

FASTFASTr

GTO

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.

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VCX

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QS

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Rev. E