©2008 Fairchild Semiconductor Corporation FDS6690AS Rev A2(X)

FDS6690AS 30V N-Channel PowerTrench® SyncFET™

General Description

The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6690AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6690AS as the low-side switch in a synchronous rectifier is close to the performance of the FDS6690A in parallel with a Schottky diode.

Applications

• DC/DC converter

• Low side notebooks

Features

• 10 A, 30 V. RDS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 mΩ @ VGS = 4.5 V

• Includes SyncFET Schottky diode

• Low gate charge (16nC typical)

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

S

D

SSSO-8

DD

D

G

4

3

2

1

5

6

7

8

Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings UnitsVDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 10 A – Pulsed 50

Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2

PD

(Note 1c) 1

W

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity

FDS6690AS FDS6690AS 13’’ 12mm 2500 units

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May 2008

FDS

6690AS

30V N

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FDS6690AS Rev A2 (X)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆TJ

Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C 30 mV/°C

IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA

On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.6 3 V ∆VGS(th)

∆TJ Gate Threshold Voltage Temperature Coefficient

ID = 10 mA, Referenced to 25°C –4 mV/°C

RDS(on) Static Drain–Source On–Resistance

VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8.5 A VGS=10 V, ID =10A, TJ=125°C

10 12 15

12 15 19

mΩ

ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 15 V, ID = 10 A 45 S

Dynamic Characteristics Ciss Input Capacitance 910 pF Coss Output Capacitance 270 pF Crss Reverse Transfer Capacitance

VDS = 15 V, V GS = 0 V, f = 1.0 MHz

100 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.0 Ω

Switching Characteristics (Note 2) td(on) Turn–On Delay Time 8 16 ns tr Turn–On Rise Time 5 10 ns td(off) Turn–Off Delay Time 25 40 ns tf Turn–Off Fall Time

VDS = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω

6 12 ns td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time 11 20 ns td(off) Turn–Off Delay Time 15 27 ns tf Turn–Off Fall Time

VDS = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω

8 16 ns

Qg(TOT) Total Gate Charge at Vgs=10V 16 23 nC Qg Total Gate Charge at Vgs=5V 9 13 nC Qgs Gate–Source Charge 2.3 nC Qgd Gate–Drain Charge

VDD = 15 V, ID = 10 A

3.0 nC

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FDS6690AS Rev A2 (X)

Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 3.5 A

VSD Drain–Source Diode Forward Voltage

VGS = 0 V, IS = 3.5 A (Note 2)

0.6 0.7 V

Trr Diode Reverse Recovery Time IF = 10A, 16 nS

Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs (Note 3) 9 nC

Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50°/W when mounted on a 1 in2 pad of 2 oz copper

b) 105°/W when mounted on a .04 in2 pad of 2 oz copper

c) 125°/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below.

FDS

6690AS

30V N

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FDS6690AS Rev A2 (X)

Typical Characteristics

0

10

20

30

40

50

0 0.5 1 1.5 2VDS, DRAIN-SOURCE VOLTAGE (V)

I D, D

RA

IN C

UR

REN

T (A

)

4.0V

4.5V

3.0V

2.5V

VGS = 10V

6.0V

0.6

1

1.4

1.8

2.2

0 10 20 30 40 50ID, DRAIN CURRENT (A)

RD

S(O

N),

NO

RM

ALI

ZED

DR

AIN

-SO

UR

CE

ON

-RES

ISTA

NC

E

VGS = 4.0V

6.0V

4.0V

10V

5.0V4.5V

3.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.7

0.85

1

1.15

1.3

1.45

1.6

-50 -25 0 25 50 75 100 125 150TJ, JUNCTION TEMPERATURE (oC)

RD

S(O

N),

NO

RM

ALI

ZED

DR

AIN

-SO

UR

CE

ON

-RES

ISTA

NC

E

ID = 10AVGS = 10V

0

0.01

0.02

0.03

0.04

0.05

0.06

2 4 6 8 10VGS, GATE TO SOURCE VOLTAGE (V)

RD

S(O

N),

ON

-RES

ISTA

NC

E (O

HM

)

ID = 5A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation with Temperature.

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

0

10

20

30

40

50

1 1.5 2 2.5 3 3.5 4VGS, GATE TO SOURCE VOLTAGE (V)

I D, D

RA

IN C

UR

REN

T (A

)

TA = 125oC

25oC

-55oC

VDS = 5V

0.001

0.01

0.1

1

10

0 0.2 0.4 0.6 0.8VSD, BODY DIODE FORWARD VOLTAGE (V)

I S, R

EVER

SE D

RA

IN C

UR

REN

T (A

)

TA = 125oC

25oC

-55oC

VGS = 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS

6690AS

30V N

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FDS6690AS Rev A2(X)

Typical Characteristics

0

2

4

6

8

10

0 3 6 9 12 15 18 21Qg, GATE CHARGE (nC)

V GS,

GA

TE-S

OU

RC

E VO

LTA

GE

(V) ID =10A

VDS = 10V

15V

20V

0

200

400

600

800

1000

1200

1400

0 5 10 15 20 25 30VDS, DRAIN TO SOURCE VOLTAGE (V)

CA

PAC

ITA

NC

E (p

F) Ciss

Crss

Coss

f = 1MHzVGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1 1 10 100VDS, DRAIN-SOURCE VOLTAGE (V)

I D, D

RA

IN C

UR

REN

T (A

)

DC10s

1s

100ms

100µs

RDS(ON) LIMIT

VGS = 10VSINGLE PULSERθJA = 125oC/W

TA = 25oC

10ms1ms

0

10

20

30

40

50

0.001 0.01 0.1 1 10 100 1000t1, TIME (sec)

P(pk

), PE

AK

TR

AN

SIEN

T PO

WER

(W) SINGLE PULSE

RθJA = 125°C/WTA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

r(t),

NO

RM

ALI

ZED

EFF

ECTI

VE

TRA

NSI

ENT

THER

MA

L R

ESIS

TAN

CE

RθJA(t) = r(t) * RθJA

RθJA = 125 °C/W

TJ - TA = P * RθJA(t)Duty Cycle, D = t1 / t2

P(pk)

t1t2

SINGLE PULSE

0.010.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS

6690AS

30V N

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FDS6690AS Rev A2(X)

Typical Characteristics (continued)

SyncFET Schottky Body Diode Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6690AS.

Figure 12. FDS6690AS SyncFET body diode reverse recovery characteristic.

For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6690A).

Figure 13. Non-SyncFET (FDS6690A) body diode reverse recovery

characteristic.

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

0.000001

0.00001

0.0001

0.001

0.01

0.1

0 5 10 15 20 25 30VDS, REVERSE VOLTAGE (V)

I DSS

, REV

ERSE

LEA

KA

GE

CU

RR

ENT

(A)

TA = 125oC

TA = 25oC

TA = 100oC

Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature.

10nS/DIV

3A/D

IV

10nS/DIV

3A/D

IV

0V

FDS

6690AS

30V N

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FDS6690AS Rev A2(X)

Typical Characteristics

VDS L

Figure 15. Unclamped Inductive Load Test Circuit

Figure 16. Unclamped Inductive Waveforms

Figure 20. Switching Time Waveforms

RGE DUTVGS

IAS

0.01Ω

VDD

+

-tp

0V

vary tP to obtain required peak IAS

VGS

tAV

tPIAS

VDS

VDD

BVDSS

Figure 19. Switching Time Test Circuit

VDS RL

RGEN DUT VDD

VGS

Pulse Width ≤ 1µs Duty Cycle ≤ 0.1%

VGS

+

-

tr tftd(ON) td(OFF

)

tON tOFF

Pulse Width10%

10%

90%

10%

90%

50%

90%

50%

0V

0V

VGS

VDS

Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform

VGS QGS QGD

QG(TOT)

10V

Charge, (nC)

DUT

VDD

VGS

Ig(REF

+

-

+

-

Same type as

Drain Current

1µF 10µ

F 10V

50kΩ

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Rev. I34

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* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used herein:1. Life support devices or systems are devices or systems which,

(a) are intended for surgical implant into the body or (b)support or sustain life, and (c) whose failure to perform whenproperly used in accordance with instructions for use providedin the labeling, can be reasonably expected to result in asignificant injury of the user.

2. A critical component in any component of a life support,device, or system whose failure to perform can be reasonablyexpected to cause the failure of the life support device orsystem, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

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tm

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Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionThis datasheet contains preliminary data; supplementary data will be pub-lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

FDS6690AS Rev.A2(X)