fabrication and characterization of nano metric thin film devices
TRANSCRIPT
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ByMrs.M.S.Revathy
Under the Guidance of
Dr.T.ChitravelDirector-Research
Anna University of technology Madurai
Madurai
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INTRODUCTIONNanotechnology is an umbrella of multidisciplines. Its exploration in semiconductingfield is drastic and set forths vast technological
applications such as sensors, light emittingmaterials, short diodes, memory devices etc.
With the excitement of its growth, thepresent research work will rely on wide band gap
semiconducting materials of II VI and III V groupin particular, chalcogenide nanometric thin filmsexhibit tremendous opto-electronic applications.
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Seminconductor materials with electronic band gaps larger than one or twoelectronvolts(eV).
The exact threshold of wideness often depends on the application, such as
optoelectronic and power devices with band gaps > 1.7 eV
Wide band gapsemiconductor
Oxides materials :ZnO, CuO, SnO etc Eg
1.2 eV
Chalcogenides,
selenides,telluridesCdS, CuS
etcEg 2.2 eV to 3.8 eV
Alloys: CdZnS,
Titanium NitrideCobalt, Nickel Ferrous
larger Eg
Wide band gap semiconductors
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FABRICATION
Present work focuses first on the fabrication of
chalcogenide family thin films .
Thin film
y Any solid or liquid object with one of its dimensions very much lesserthan that of the other two is called a thin film.
y Thin film devices would typically be about 5 to 50 m thick in contrastto bulk devices, which are about 50 to 250 m thick.
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y Evaporation
y spray pyrolysis
ychemical bath deposition
y dip coating
y electro chemical deposition
y chemical vapourdeposition (CVD).
Out of which chemical bath depositionyields costeffective, stable, uniform, adherent and hard films withgood reproducibility by a relatively simpler process.
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XRD : Identifies the crystal structure. TEM : Determines the size.
AFM: Visualizethe surface texture.
SEM : Characterize the topography of the sample.
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SEM Inside surfaceof eggshell
AFM showing all atoms within the
hexagonal graphite unit cells. Image
size 22 nm2
TEM imageXRD
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y Sensorsy Light emitting materials.y Memory devices.y Laser Protectiony Optoelectronicsy Infrared detectiony
Photoconductorsy Solar energy conversion, Solar Cellsy Nanomaterials (Phosphors for high-definition TV)y Nanocrystalline zinc selenide, zinc sulfide, cadmium
sulfide, and lead telluride
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REFERENCESREFERENCESy [1] J. Aguilar-Hernandez, J. Sastre- Hernandez,N. Ximello-Quiebras, R. Mendoza-Perez,
y O. Vigil-Galan, G. Contreras-Puente, M. Cardenas-Garcia , Thin Solid Films
511-512,143 (2006).
y [2] David Zubia, Cesar Lopez, Mario Rodriguez, ArevEscobedo, Sandra Oyer, Luis Romo,
y
Scott Rogers, Stella Quinonez and John McClure, J.Elect.Mater. 36,12 (2007).y [3] T, Chandra, S. Bhushan, J.Mater. Sci. 39,6303 (2004).
y [4] Wenzhong Wang, Igor Germanenko, M.SamyEl-Shall, Chem.Mater. 14,3028 (2002).
y [5] T.Taguchi, Y.Endoh, Y.Nozue, Appl.Phys.Lett, 56,342 (1991).
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Thank you