extended common mode lvds solutions
TRANSCRIPT
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Extended Common Mode LVDS Solutions
Volodymyr Burkhay
TELEFUNKEN Semiconductors GmbH & Co. KG, Germany
20th SpaceWire Working Group
meeting
2013, April 10th, 16:40 – 17:00
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Outline
• Last Meeting State
• Measurement Results
• Components Development
• Features Development
• Radiation Test Results• Conclusion
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Last Meeting State
TELEFUNKEN Semiconductors Extended Common Mode LVDS
• SOI technologies: 0.35µm, 0.8µm
• robustness: ≤ 200V, no Latch‐Up• efficiency: LV & HV on die, 0.8µm isolation ≤ 100V• suitable for harsh and radiation environments
• Competitive high‐speed performance and efficiency of LVDS
• Robustness of RS‐485/422• Common mode rejection to be measured
• Failsafe to be improved
• Cold spare capability to be improved
• Further radiation tests to be done
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Extended Common Mode Measurements
- 7V
1.2V
12V
GND @ Tx
VICM
GND @ Rx
(Common Mode Voltage)
VID
Data Rate (PRBS23) = 200Mbps, VID = 200mV, VICM settings:
VICM = 12VVICM = 1.2VVICM = ‐7V
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Extended Common Mode Measurements (2)
- 7V
2.4V
6V
10V
0V
- 4V
GND @ Tx
VICM
GND @ Rx
(Common Mode Voltage)
VID
Data Rate (PRBS23) = 200Mbps, VID = 200mV, VICM settings:
0V ≤ VICM ≤ 2.4V, f = 2kHz ‐4V ≤ VICM ≤ 6V, f = 250Hz ‐7V ≤ VICM ≤ 10V, f = 150Hz
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Introduced Components
TF90LVDS031TF90LVDS047 TF90LVDS105
TF90LVDS032TF90LVDS048 TF90LVDS104
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Future Components
TF90LVDS011TF90LVDS012 TF90LVDS019
TF90LVDS017TF90LVDS018 TF90LVDS019
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Improved Features
• Failsafe Functionality• implement feature in the receiver
• Cold Spare Capability
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Improved Features
• Failsafe Functionality• Cold Spare Capability
• available on LVDS side• implement feature on CMOS side
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TF90LVDS031
-2%
0%
2%
4%
6%
8%
10%
12%
pre
radi
atio
n
5kra
d
10kr
ad
20kr
ad
40kr
ad
100k
rad
afte
r roo
mte
mpe
ratu
rean
neal
afte
r hot
tem
pera
ture
anne
al
drift
High-impedance output current
Differential output voltage
Steady-state output cm voltage
Output short circuit current
Power supply current (disabled)
Power supply current (loaded)
TF90LVDT032
-1%
0%
1%
2%
3%
4%
5%pr
e ra
diat
ion
5kra
d
10kr
ad
20kr
ad
40kr
ad
100k
rad
afte
r roo
mte
mpe
ratu
rean
neal
afte
r hot
tem
pera
ture
anne
al
drift
Output short circuit current
LVDS input termination resistor
LVDS input current @ -7 V
LVDS input current @ +12 V
Power supply current (static)
Power supply current (disabled)
Results• Minor shifts in key data sheet parameters after TID irradiation up to 100krad
• None of the component specifications are violated
• all tested parts keep their complete functionality
Preliminary TID Radiation Test
Conditions
• TID without applied bias• 5 TID groups• Dose rate: 75 rad/min (60Co source)
• Room temperature annealing
• Hot temperature annealing 100°C for 5 h
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Acknowledgement• Many thanks to ESA/ESTEC for preparing and performing the SEE tests:
• Giorgio Magistrati
• Gianluca Furano
• Farid Guettache
New Results: SEE Heavy Ions Test
Point‐of‐Load Converter
• same technology as LVDS components
• utilizing all technology devices used in LVDS components
• VIN ≤ 26V, IOUT ≤ 3A• SEE 60.7MeV/(mg/cm2): no fails; SET
LVDS Receiver & Driver
• SEE test is being prepared and will follow very soon VOUT
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Conclusion
• Extended Common Mode LVDS is still challenging application
• The components from TELEFUNKEN Semiconductors are showing good common mode rejection
• High frequency CM‐noise have to be filtered
• TELEFUNKEN Semiconductors is testing new features
• Improved failsafe functionality
• Full cold spare capability• Radiation tests
• Good results until now• SEE test of LVDS will follow• TID test with applied bias will follow
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Thank you for your attention!