evaluation of dmos transistors as electron beams dosimeter
DESCRIPTION
M.A. Carvajal , F. Simancas, D. Guirado, J. Banqueri, S. Martínez-García, A.M. Lallena and A.J. Palma. EVALUATION OF DMOS TRANSISTORS AS ELECTRON BEAMS DOSIMETER. Summary. Introduction DMOS study Methods and materials Results and discussion Conclusion DMOS study CD 4007 characterization - PowerPoint PPT PresentationTRANSCRIPT
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M.A. Carvajal, F. Simancas, D. Guirado, J. Banqueri, S. Martínez-García, A.M. Lallena and A.J. Palma
EVALUATION OF DMOS TRANSISTORS AS ELECTRON
BEAMS DOSIMETER
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Introduction DMOS study
Methods and materials Results and discussion Conclusion DMOS study
CD 4007 characterization Thermal characterization Characterization as dosimeter Results and discussion
Conclusions Acknowledgements
Summary
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Complementary technique applied just after the cancer extraction.
Electron beams provided by a LINAC. Aims to destroy the remaining tumoral cells on the edge of
the cancer. Only one session.
Introduction
Intra Operative Radiotherapy (IORT):
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IORT:
Introduction
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Treatment planning in IORT:
Introduction
Software using MonteCarlo code
Dosimetry control very suitable
MOSFETs dosimeters provides immediate readout
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Dosimetric system:
Materials and Methods
Commercial pMOS transistors (non RADFETs) Reader unit and dosimeters based on commercial
pMOSFET developed by our research group Thermal characterization need for thermal
compensation Readout techniques for linearity and resolution
improvements
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7
Measurement method: Two currents: Linear range improvement
Three currents: Thermal compensation (IZTC)
1
2
121
1I
I
VVVV SSSt
ZTC
ZTCSSZTCSt
I
I
VVVV
2
,02
,
1
C
ZTCSSCSS
II
IIVVVV
2
222
02
Non thermal compensated
Materials and Methods
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8
Method And Materials:Block diagram of dosimetric
system
Sensor module
S
G
D
B
pMOSJFET
RG
ADC
ADC
DACI2C
ID
JFETcontrol
FT232
USB
0
1 1 3 A
4 5 6 B
7 8 9 C
. D
2Readerunit
Reader unitUniv.Granada
EEPROMmemory
BJT
555
MCU
I.A.
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Dosimetric system:
Method And Materials
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Method And Materials:Experimental setup
Model DMOS tested (Unbiased mode): BS250F, ZVP3306 and ZVP4525
Four transistors per model Irradiated by a Siemens Mevatron KDS:
6 MV electrons Field 25x25 cm2 At the iso-center, 100 cm Normal incidence
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Method And Materials:Thermal characterization
I-V characteristics at different temperatures Extracted by a semiconductor analyzer
(B1500, Agilent Technologies) Temperature variations produced by a
climate chamber (VCL4006 Vötosch Industryetedhnik, Germany)
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The IZTC was not found for the studied DMOS transistor:
T1 (ZVP3306)
0.0E+00
4.0E-04
8.0E-04
1.2E-03
1.6E-03
2.0E-03
2 2.5 3 3.5V (V)
I (A
)
-15.1-4.8-0.99.720.030.540.549.7
Method And Materials:Thermal characterization
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No IZTC then 2 currents algorithm to determine the VT.
Numerical compensation: Determination the thermal coefficient of VT (VT)
ZVP3306
y = -0.0027x + 2.1138R2 = 0.9962
1.98
2.00
2.02
2.04
2.06
2.08
10 20 30 40 50T (ºC)
|VT|(
V)
Method And Materials:Thermal characterization
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Thermal compensation
Thermal coefficients:
Table 2.TV
(mV/ºC) for different DMOS
Average BS250F -2.24 0.18
ZVP3306 -2.48 0.16
ZVP4525 -3.3 0.4
Method And Materials:Thermal characterization
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Results and discussion
ZVP3306
y = 3.4151xR2 = 0.9993
y = 3.5845xR2 = 0.9983
y = 3.5447xR2 = 0.9985
y = 3.5739xR2 = 0.998
0
50
100
150
200
250
0 10 20 30 40 50 60D (Gy)
|V
T| (
mV
)
82 87 93 98
Accumulate VT shift as dose function
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Results and discussion
ZVP3306
2.5
2.9
3.3
3.7
4.1
4.5
0 10 20 30 40 50 60D (Gy)
Sen
(m
V/G
y)
82 87 93 98
Accumulate VT shift as dose function
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Average sensitivities:
Results and discussion
Table 2. Sensitivity (mV/Gy)
Average ZVP3306 3.71 0.27
BS250F 3.14 0.37
ZVP4525 3.38 0.44
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ZVP3306: Thermal coefficient: (-2.48 ± 0.16) mV/ºC Average sensitivity: (3.7 ± 0.3) mV/Gy Then, thermal drift: (0.60 ± 0.07) Gy/ºC
Results and discussion
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Conclusions of DMOS study
ZVP3306 presented the highest sensitivity and lowest dispersion
However, the thermal dependence is too high to be used as dosimetry control in IORT.
A thermal compensation algorithm is needed or the sensitivity must be increased (for example using an external bias voltage)
To look for new dosimeter candidates: We have tested the CD4007 integrated circuit.
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Texas Instruments (USA) 0.3 € and 100 nm of SiO2
New pMOS as dosimeter:Characterization of CD 4007
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CHARACTERIZATION CD 4007:Thermal response, IZTC
T2
0.0E+00
5.0E-05
1.0E-04
1.5E-04
2.0E-04
2.5E-04
3.0E-04
1.8 1.9 2 2.1 2.2 2.3 2.4 2.5VDS(V)
I(A)
15º20º25º30º35º40º45º
I-V of five in saturation region, VGD =0 f from 15 to 45ºC
ID
VS
VDD
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VT thermal coefficient: (-2.0 ± 0.3) mV/ºC
Thermal compensation is needed. IZTC found for CD4007: (137 ± 19) A
Three current algorithm can be applied
CHARACTERIZATION CD4007:Thermal response, IZTC
T1
y = -2.2E-03x + 6.4E-02
y = -1.7E-06x - 1.6E-03
-0.06
-0.04
-0.02
0
0.02
0.04
10 20 30 40 50T (ºC)
VT (
V)
UncompensatedCompensated
CmV
CmV
To
T
V
V
/º)24.01.0(
/º)3.00.2(
Five transistor studied:
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CHARACTERIZATION CD4007:Irradiation conditions
Buildup (1.5 cm, and only for photon beams)
Ionization chamber PTW23332
CD4007 dosimeter modules (At the isocentre)
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CHARACTERIZATION CD 4007:Linearity, Photon beams 6 MV
y = 5.2778xR2 = 0.9999
y = 5.3057xR2 = 0.9995
y = 5.1321xR2 = 0.9997
y = 5.1778xR2 = 0.9996
y = 5.2968xR2 = 0.9995
0
20
40
60
80
100
120
140
0 5 10 15 20 25 30
D (Gy)
VT (
mV
)
7
8
9
10
11
12
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CHARACTERIZATION CD 4007:Sensitivity, Photon beams 6 MV
4.5
4.7
4.9
5.1
5.3
5.5
5.7
0.0 5.0 10.0 15.0 20.0 25.0 30.0D (Gy)
Sen
(m
V/G
y)
7 8 9 10 11 12
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CHARACTERIZATION CD 4007:Sensitivity, Photon beams 6 MV
Transitor Value Uncertainty7 5.278 0.0138 5.297 0.0229 5.30 0.02
10 5.132 0.01911 5.311 0.01812 5.306 0.018
Avg 5.27 0.07
Sen (mV/Gy)
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CHARACTERIZATION CD 4007:Linearity, Electron beams 6 MV
y = 4.5959x
R2 = 0.9998
y = 4.5761x
R2 = 0.9995
y = 4.6387x
R2 = 0.9997
y = 4.4938x
R2 = 0.9993
y = 4.5667x
R2 = 0.9998
0
20
40
60
80
100
0 5 10 15 20
D (Gy)
VT (
mV
)
1
2
3
4
5
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4.2
4.3
4.4
4.5
4.6
4.7
4.8
0.0 5.0 10.0 15.0 20.0D (Gy)
Sen
(m
V/G
y)
1 2 3 4 5
CHARACTERIZATION CD 4007:Sensitivity, Electron beam 6 MV
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CHARACTERIZATION CD 4007:Sensitivity, Electron beam 6 MV
Transitor Value Uncertainty1 4.596 0.0122 4.576 0.0203 4.494 0.0234 4.639 0.0175 4.567 0.0126 4.865 0.012
Avg 4.62 0.13
Sen (mV/Gy)
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CHARACTERIZATION CD 4007:Thermal considerations
Value UncertaintyNon compensated -2.0 0.3
Compensated -0.01 0.24Photons 6 MV 5.27 0.07Electrons 6 MV 4.62 0.13
Non compensated Photons 6 MV -0.39 0.12Dose coefficient (Gy/ºC) Electrons 6 MV -0.44 0.05
Compensated Photons 6 MV -2.E-03 5.E-02Dose coefficient (Gy/ºC) Electrons 6 MV -3.E-03 5.E-02
Thermal drift (mV/ºC)
Sensitivity (mV/Gy)
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Conclusions of CD4007
CD4007 presents a sensitivity of radiation of
(4.62 ± 0.13) mV/Gy for photon beams of 6 MV Thermal dose coefficient of 5 cGy/ºC A good candidate to be use as IORT dosimeter Need to study in depth thermal dependence, linearity
and calibrations Possible sensitivity increasing: biasing, stacking pMOS
transistors.
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Acknowledgements
University Hospital San Cecilio (Granada, Spain). For funding this work: Ministerio de Ciencia e
Innovacion and the Junta de Andalucía. And partially supported by European Regional
Development Funds (ERDF)
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M.A. Carvajal, F. Simancas, D. Guirado, J. Banqueri, S. Martínez-García, A.M. Lallena and A.J. Palma
Thank you very munch for your attention