FY2002 Energy Storage Systems Program Review

ETO Thyristor: Enabling Technology For ETO Thyristor: Enabling Technology For Low Cost Power Conditioning SystemLow Cost Power Conditioning System

Principal Investigator:Principal Investigator: Prof Alex Q. Huang Prof Alex Q. Huang Center for Power Electronics Systems, Virginia TechCenter for Power Electronics Systems, Virginia Tech

SNL Project Manager:SNL Project Manager: Stan AtcittyStan AtcittyDOE Manager:DOE Manager: Dr.Dr.Imre GyukImre Gyuk

1Home

Agenda

Presentation Outlines

•Project Objectives

•FY2002 Activities and Accomplishments• New generation ETO

• The high-power pulse test of the ETO

• Continuous high switching frequency test of the ETO

•Applications and Insertions of ETOs

•Planned Future Works

Project Objectives: Advanced High-Power Switch

GTOPow

er (I

x V

, MW

)

5

15

SCR

Target Region Target Region

Switching frequency (Hz)50 500 5000

Developing a low-cost high-frequency, high-power switch for energy storage and other applications45

IGBT

ETO: A New High Power Switch for PCS• Low voltage MOSFETs integrated with high-voltage GTO• Voltage control• Using the anode current to provide the turn-off energy• Unity turn-off gain enables fast switching speed• Unity turn-off gain enables snubberless turn-off capability

GTOPow

er (I

x V

, MW

)

5

15

SCR

Switching frequency (Hz)50 500 5000

45

Emitter Turn-Off (ETO) Thyristor

IGBT

Major ETO Development Roadmap

1.0 kA to 4 kA

4.0 kV to 6 kVGen-0

Gen-3…….

•ESSP supported three generations of development•Gen-3 developed in FY2002•Gen-4 will be developed for FY2003

Gen-2

Gen-1

The ETO : low cost solution for high-power

Toshiba GTO SG4000 JX26

Mitsubishi ETO FG4000GX-90DA

ABB ETO 5SGT40L4502

Dynex ETO DG858BW45

Universal ETO driver

• The GTOs from different manufacturers can be used as the ETO’s main switch to achieve the highest snubberless turn-off capability.

• The ETO can be optimized according to its application.

Significant ETO Characteristics

Positive temperature coefficient allows parallel operation

Significant ETO Characteristics

-1000

0

1000

2000

3000

4000

5000

0 5 10 15

Anod

e Vo

ltage

(V)

Anod

e C

urre

nt (

A)

Time (us)

Anode Current (A)

Anode Voltage (V)

Snubberless turn-off capability allows elimination of snubbers hence simpler systems

Significant ETO Characteristics

The time intervals during turn-off at 2000A, 2000V

1.36 1.44 1.4 1.4 1.4

1.2 1.2 1.2 1.2 1.2

3.4 3.4 3.4 3.43.4

0

1

2

3

4

5

6

7

1 2 3 4 5

ETO number

time

(us)

storage time voltage rising time current faling time

ETO1 ETO2 ETO3 ETO4 ETO5

•Identical switching timesallow series operation

Significant ETO Characteristics

0

20

40

60

80

100

0 500 1000 1500 2000Switching current (A)

Gat

e un

it po

wer

con

sum

ption

(W)

IGCT

ETO

Gate power @1kHz

Very low gate control power enables high-frequency operation

Built-in Current Sensing Capability of the ETO

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

0 500 1000 1500 2000 2500 3000

Current (A)

PWM duty cy

cle

Measure current vs. output duty cycle

Enables easy control and system protection

Continuous high switching frequency test of ETOs

The cap filter

ETO

The 2000VDC, 1500A r.m.s, 1kHz ETO switch, Inductor, and diodes

The 1000V/100Apower supply

The 20kWresistor load

Objective: to test and evaluate the ETO’s high switching frequency operation, thermal handling capability, control power consumption, and the reliability.

The high switching frequency test results

Operation duration: continuous

Switching frequency: 1 kHz

Switching loss: 3.3 kW

ETO peak junction temperature: >100 OC

Snubberless turn-off current: 650A

Snubberless turn-off bus voltage: 2000V

The thermal test results

20

30

40

50

60

0 10 20 30 40 50 60 70 80 90 100

time (minute)

tem

pera

ture

(C)

Switching frequency: 1kHz, bus voltage : 2 kV, Switching current: 650A

ETO case temperature

ambient temperature

• Reliable thermal handling characteristic of the ETO at high switching frequency was demonstrated.

HBBB Enables Modular Multilevel Converter Design

•Modular and expandable topology for high voltage power systems,•Considerably lower THD •Fast dynamic (due to ETO and multilevel)

van

EaN

+_

SaN

Ea2+_

Ea1+_

…

ia

EbN

+_

Eb2+_

Eb1+_

…

ib

EcN

+_

Ec2+_

Ec1+_

…

ic

vbn vcn

a b c

n

va1+_va1+_

va2+_va2+_

vaN+_vaN+_

vb1+_vb1+_

vb2+_vb2+_

vbN+_vbN+_

vc1+_vc1+_

vc2+_vc2+_

vcN+_vcN+_

S11

S13

S12

S14

HBBB

ETO-Based HBBB Prototype

Specification :• Main Devices : 4kA/4.5kV ETO

• di/dt Limitation : 200 A/µs• Bus Voltage : 2 ~ 2.5 kV

• Voltage Ripple : 10%• Output RMS Current : 1.25 kA• Switching Frequency : Up to 2 kHz• Power Capacity : 1.5 MVA (3 MVA pulse)• Cooling System : Water

System Demonstration: ETO DSTATCOM

ETO voltage(2 kV/Div)

ETO current(1 kA/Div)

HBBB Output Current(500 A/Div)

Energy Storage System Demonstration Program

N

HBBBa HBBBb HBBBc

Ultra CAP (EPRI-PEAC)

Infinite Bus Load

PCC

3-phase coupling inductor or transformer

VA VB VC

•Three HBBBs forms a 4.5 MVA three-level VSC DSTATCOM•Can be used for real and reactive power support

Modular Digital Control Architecture

DSPMaster

Controller

HBBBCBi-directional Optical Signal

AC Protection and Start-up

AC Protection and Start-up

VpccMeasurement

VpccMeasurement

Key features of the control:

• HBBB provides modular power converter design• Ring structure provides modular control design• Allow easy expansion of # of levelsand # of FACTS nodes• All switching and measurement signals are transferred using one single optical fiber(+backup)• Better performance, more reliability, and cost effective

HMHM HMHM HMHM

DSPMaster

ControllerFPGA Local controller (under development)

Simulation Results of Real Power Compensation

Output Current

VPCC

Output voltage

+ Real power - Real power

ConclusionsThree key enabling technologies are developed at Virginia Tech

•Advanced switch technology (ETO)4000A snubberless turn-off capabilityLow cost resulting from use of conventional GTOVery low control powerContinuous & sustained operation at 1 kHz and Tj,max >125 oC is

demonstratedGen-4 will be developed in FY2003

•Advanced modular converter technology (HBBB)•Advanced modular digital controller technology

These technologies will enable low cost, advanced ESS implementation

DSTATCOM with energy storage are being developed

ETO commercialization and insertion are underway

Acknowledgment

• The ETO switch and system development are funded by DOE and managed by SNL through the ESSP, and by Tennessee Valley Authority .

• Supports from American Competitiveness Institute, ONR & NSWC are gratefully acknowledged.

Top

Agenda