esycom 5 avril 2005 c. r. 1 equipe systemes de communication et microsystemes : esycom / ea 2552...

ESYCOM 5 avril 2005 C. R. 1

EQUIPE SYSTEMES DE COMMUNICATION

ET MICROSYSTEMES : ESYCOM / EA 2552

COMMUNICATION SYSTEMS AND MEMS TEAM

C. Rumelhard


1 – Origin of ESYCOM

2 – Configuration of ESYCOM

3 – An example of item: Microwave Photonics

4 – Synthesis and prospects

SUMMARY



• 1994: Master High Frequency Communication Systems, cooperation: UMLV, CNAM, ESIEE, INT Evry

• 1996: High Frequency Electronics Pole with CNAM, ESIEE, UMLV in Marne la Vallée

• Jan. 2000: Label for 2 years as “Equipe d’accueil” by french Research Ministry under the name: Equipe Systèmes de Communication, ESYCOM

• Jan. 2002: new label for 2 years


• in 2003: association with MEMS team of ESIEE => Equipe Systèmes de Communication et Microsystèmes, ESYCOM

• Jan. 2004: label for 2 years

• Oct. 2005: cooperation with french CNRS in a « Groupement d’Intérêt Scientifique »

• Oct. 2005: label for 4 years (2006-2009)



• Electromagnetism and applications, UMLV, ESIEE• Digital wireless communications, ESIEE• Microsystems and microtechnologies, ESIEE, CNAM, UMLV• Photonics and microwaves, CNAM, ESIEE, UMLV

Research items

High Frequency Measurements

• Antennas, Propagation and EMC, UMLV• Characterisation of circuits and digital communication systems in microwaves and optics, ESIEE• Photonics and microwave characterisation, CNAM

MEMS technology, ESIEE



1 - Electromagnetism and applications UMLV, ESIEE- Numerical computations for electromagnetism- Antennas and networks - EMC, propagation and mastering of hertzian channel

2 – Digital Wireless Communications ESIEE- Transmitter/Receiver architectures - Signal and image coding

3 - Microsystems (MEMS) and technology ESIEE, CNAM, UMLV- Sensors, actuators and associated electronics - RF and optical MEMS

4 - Photonics and microwaves CNAM, ESIEE, UMLV- Microwave circuits and links in optics- Photonics and microwave components


Research items


• 4 research items• 34 teachers-researchers• 29 Ph D• 5 technicians/engineers• 15 Ph D passed since 2000• 3 measurement equipments• MEMS technology




Teachers-

researchers Ph D

Technic.

Techno

Technic.

Engin.

UMLV 9 9 1

CNAM 4 4 0,2

ESIEE 21 16 2,5 (8) 1,2

ESYCOM 34 29 2,5 (8) 2,4

Human resources



29 Ph D:

T1 : French research ministry fundingT2 : Cifre fundingT3 : R/D contractsT4 : Foreign affairs ministry, foreign government fundingT5 : Institutions or industry fundingT6 : Others

T223%

T137%

T310%

T413%

T57%

T610%


Main activities

• European network of excellence: Network of Excellence in broadband Fiber Radio Techniques and its Integration Technologies: NEFERTITI

• European network of excellence: Antenna Center of Excellence: ACE • 3 french RNRT (National Research Network in Telecommunications) contracts

• 3 ANVAR contracts• 1 CNES contract• 1 CNRS contract• 1 ACI –Ville contract• etc…



Main activities

• Organisation of Europan Microwave Week in Oct. 2000 in Paris La Défense: 3 conferences, 11 workshops, 3 short courses, 1 exhibition2000 registrations conf. and workshops, 1300 visitors of exhibition, 38 countries

• Organisation of 3 Summer Schools on “RF and Microwave Systems” - Sept. 2001: Architectures for RF systems (ESIEE) - Sept. 2002: Mastering of hertzian channel with several

communication systems (UMLV)- March 2004: Advanced design of MMICs for millimeter waves,

photonic and multifunction applications (CNAM)




Item 1

Electroma-gnetism

Item 2

Wireless communic.

Item 3

Microsyst.-microtechno

Item 4

Microwave

photonics Total

Scientific

books2 3 5 6 16

Transactions 22 11 16 5 54

Conferences 48 50 59 28 175

Patents 3 4 6 2 15

Ph D 4 5 5 6 20

Publications


3 – An example of item: microwave photonics

• 3 professors, 2 lecturers, 4 passed Ph D, 5 Ph D, 5 Engineer diploma memoires

Why microwave photonic links? • Signal distribution in phased array antennas : commercial satellites or military planes. A few metres.

• Radio over fiber. Few km for microwaves over optics and a few tens of meters for hertzian microwave link

• Optical distribution of a signal in very high bit rate electronic systems. A few m or a few tens of m.


Enjeux des systèmes de Défense

Les technologies Optoélectronique et Hyperfréquence doivent être intimement liées pour jouer un rôle stratégique dans les systèmes futurs

Antennes conformes multifonctions distribuées

Choix de

systèmes reconfigurables

à antennes actives

conformes

distribuées

multi-faisceaux

& multifonctions (antenne partagée: R/GE/Coms)


Near future: high bit rate optical connections

5 à 10 years:Chip to chip

communications

2 à 5 years: Card to card

communications


• Establishment of a library of models to simulate a complete microwave photonic link with a non linear frequency domain simulator ( ADS). Many simulations in gain, noise and non linearities ofmicrowave photonic links (3 CNAM memoires + part of a thesis)

ESYCOM + Thales Airborne Systems


Circuits for microwave photonic links


Microwave optical links

laser

ampli driver

Optical fiberphoto-détector

Low noiseampli

RF RF

= 1,55 ou 1,3 ou 0,8 µm

Intensity Modulation Direct Detection

Direct modulation

laser

ampli driver

Optical fibrephoto-détector

Low noise ampli

RF RF

= 1,55 ou 1,3 ou 0,8 µm

D Dmodulator MZ ou EA

I M external modulation


Laser diode 50 km OpticalFibre

Photodiode

biasing current : 22 mAmodulation current: 0.1 mAfrequency: 0 - 20 GHz

Optical link


Laser diode Opticalfibre

Photodiode

Laser output

Optical link

m1freq=4.086719GHzmag(Vopt_laser)=0.000132

0 2 4 6 8 10 12 14 16 18 20

0.00000

0.00005

0.00010

0.00015

freq, GHz

mag(V

opt_

laser)

m1


Laser diode Optical Fibre (50 km)

Photodiode

optical fibre output

Optical link

m2freq=4.087GHzmag(Vout_FO)=1.323E-6

0 2 4 6 8 10 12 14 16 18 20

0.0

5.0E-7

1.0E-6

1.5E-6

freq, GHz

mag(V

out_

FO

)

m2


Laser diode Optical fibre (50 km)

Photodiode

Photo-current:

Optical link

m3freq=4.087GHzmag(Iph_PIN.i)=9.529E-7

0 2 4 6 8 10 12 14 16 18 20

0.0

2.0E-7

4.0E-7

6.0E-7

8.0E-7

1.0E-6

freq, GHz

mag(I

ph_P

IN.i)

m3


Laser diode Optical fibre (50 km)

Photodiode

Output on 50 :

106/10

50

6

10I 2.

50

10 A

m4freq=4.087GHzdBm(Vout_link)=-76.255

0 2 4 6 8 10 12 14 16 18 20

-160

-140

-120

-100

-80

-60

freq, GHz

dB

m(V

out_

link)

m4

Optical link


• Opto amplifier at 30 GHz with InP/GaInAs heterojunction phototransistors (HPT) (Ph D)

Design: ESYCOM with our HPT models Technology: OPTO+ MarcoussisMeasurements: LEST Brest




R0

C1

L1

Vce3+

4

CdVbe4

C2

L2

Vce3

Vbe3

Cd

Cd

Rd

T51030PV4E

/4

Vbe1 Cd

C3

L3

Vce1

Vbe2

Cd

Cd

Rd

Optiquemodulée

Microondes30 GHz

m1 freq=31.70GHz dBm(Pout)=-55.096

0.9 10 20 30 40 50

-130

-110

-90

-70

-50

frequency, GHz

Pout (dBm)

m1

Opto amplificateur à 30 GHzen technologie TBH InP OPTO+


• Broad band distributed preamplifier 0,2 to 20 GHz for photodiode (CNAM memoire)

Design: ESYCOM + Ferdinand Braun Institut für Höchstfrequenztechnik BerlinTechnology: UMS Orsay-Ulm Measurements: ESYCOM

3 – An example of item: microwave photonicsCircuits for microwave photonic links


• Modulator (up converter) at 30 GHz (Ph D + patent)Design: ESYCOM Technology HFET: UMS Orsay-UlmMeasurement: ESYCOM

3 – An example of item: microwave photonicsCircuits for microwave photonic links


• Frequency tripler 12,66-38 GHz (Ph D)Design: ESYCOM HFET technology : OMMIC Limeil BrévanneMeasurements: ESYCOM + Agilent Palo Alto

• Chipset for transmitter and receiver of UWB signals (3,6-10,7 GHz) (Ph D)

Design: ESYCOMTechnology: UMS Orsay-UlmMeasurements: ESYCOM + ENSTA Paris




Monocycle wavelet generator

PH25NHFF8

G

S

D

PH25NHFF7

G

S

D

PH25NHFF6

G

S

D

PH25NHFF5

G

S

DPH25NHFF4

G

S

D

PH25NHFF3

G

S

D

PH25NHFF2

G

S

D

PH25NHFF1

G

S

D

RR5R=50 Ohm

V_DCSRC35Vdc=Vds2 V

RR6R=50 Ohm

V_DCSRC31Vdc=100 mV

V_DCSRC32Vdc=250 mV

V_DCSRC33Vdc=100 mV

V_DCSRC43Vdc=50 mV

I_DCSRC44Idc=Iee2 mA




VtPulseSRC42

Period=8 nsecWidth=4 nsecFall=0.5 nsecRise=0.5 nsecEdge=linearDelay=2 nsecVhigh=Vi1 VVlow=-Vi1 V

t

PH25NHF_SDDX12

PH25NHF_SDDX10

PH25NHF_SDDX6

PH25NHF_SDDX7

PH25NHF_SDDX5

PH25NHF_SDDX11

PH25NHF_SDDX9

PH25NHF_SDDX8

Generation of monocycle pulses with differential pairs of transistors


Monocycle generator: input and output signals

-400

-200

0

200

400

-600

600

sig

nal_

carr

e, m

V

m6time=1.997nsecVout=0.107

2 4 6 80 10

-0.10

-0.05

0.00

0.05

0.10

-0.15

0.15

time, nsec

Vout

m6

m1time=1.822nsecVout=-3.527E-4

m2time=2.072nsecVout=-4.175E-4

m3time=1.997nsecVout=0.107

1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.51.3 2.6

-0.12

-0.10

-0.08

-0.06

-0.04

-0.02

0.00

0.02

0.04

0.06

0.08

0.10

-0.14

0.12

time, nsec

Vou

t

m1 m2

m3

Rectangular signal applied at the input of the pulse generator

Series of generated monocycle pulses


Microwave photonic components

• InP/GaInAs heterojunction phototransistor (HPT) (Ph D)Numerical and physical simulations of semiconductordevices in finite differences : ESYCOMMeasuremens: OPTO+ Marcoussis, LEST Brest, ESYCOM

• New concepts (optoelectronic S parameters) for optoelectronic modelling of a HPT: ESYCOM



Description of InP/GaInAs HPTs

InP/GaInAs HPT realized by OPTO +

C. Gonzalez, “HBT Phototransistor as an Optical Millimeter wave Converter - Part I: the Device”,part 5.3 of a book entitled: “Microwave Photonics: From Components to Applications and Systems”,Edited by Vilcot, Cabon, Chazelas, Kluwer Academic Publishers, The Netherlands, in print – to be published in 2003

Base

Collector

InP Sub- Collector

Emitter

p-InGaAs

n-InGaAs

n-InP

Optical beam

Base

Collector

InP Sub- Collector

Emitter

p-InGaAs

n-InGaAs

n-InPBase

Collector

InP Sub- Collector

Emitter

p-InGaAs

n-InGaAs

n-InP

Optical beam

Window in the base


Description of InP/GaInAs HPTs

InP/GaInAs HPT realized by OPTO +

Base

Collector

InP Sub-Collector

Emitter

p-InGaAs

n-InGaAs

n-InP

Optical beam

Base

Collector

InP Sub-Collector

Emitter

p-InGaAs

n-InGaAs

n-InPBase

Collector

InP Sub-Collector

Emitter

p-InGaAs

n-InGaAs

n-InP

Optical beam

500nm: N ++ – 1.10 19cm -3

500nm: N – 1.10 16cm -3

50nm: N – 2.10 17cm -3

N++ – 1.10 19cm -3

60nm: P + – 2.10 19cm -3 In0.53Ga 0.47As

InP

InP

In0.53Ga 0.47As

In0.53Ga 0.47As

500nm: N ++ – 1.10 19cm -3

– 16 -

50nm: N – 2.10 17cm -3

N++ – 1.10 19cm -3

60nm: P + – 2.10 19cm -3 In0.53Ga 0.47As

InP

InP

In0.53Ga 0.47As

In0.53Ga 0.47As

Either abrupt(PV4D)

Or gradual(PV4E)

500nm: N 1.1016 cm -3

• Absorption of light in base and collector • Source of photonic current comes mainly from BC depleted zone


N. Chennafi, 05/07/99 9

Simulation physique (différences finies 2D) de PTH InP/GaInAs

optiquemodulée


HPT large signal model

E

CB

Popt

POUT

E

Ict

RC

RE

C

Rb1 Rb2B

Icni X.CjCICC

CjE IEni IEC

(1-X).CjC

.Vopt

IAV

IcN

IbN

Vopt

- modulated light- microwave response- noise- thermal behaviour


• Si/SiGe phototransistor (Ph D) Physical simulation and design: ESYCOM

Technology: Atmel Heilbronn through Université of Ulm Microwave measurements : IEF OrsayOptoelectronic measurements: ESYCOM

• First world result for a Si/SiGe HPT• Comparison with other teams in the world (Germany, France, Israel, Taïwan, USA) in a workshop organised by ESYCOM in Budapest in Sept. 2003 in association with an IEEE Topical Meeting on Microwave Photonics• For a Si/SiGe HPT, a team of the University of Taïwan began with a MQW structure and recently switched to our solution.




Description of Si/SiGe HPTs

Designed by ESYCOM and Ulm University , realized by Atmel Heilbronn

J.L. Polleux, F. Moutier, A.L. Billabert, C. Rumelhard, E. Sönmez, H. Schumacher, “A Strained SiGe layer Heterojunction Bipolar Phototransistor for Short-Range Opto-Microwave Applications”, IEEE International Topical Meeting on Microwave Photonics, MWP2003, Budapest, Hungary, Sept. 2003

10µm10µm10µm

Base

Emitter

n-Si

Collector

Si Sub- Collector

p-SiGe

n-Si

Emitter

Ge %

Optical beam

Base

Emitter

n-Si

Collector

Si Sub- Collector

p-SiGe

n-Si

Emitter

Ge %

Base

Emitter

n-Si

Collector

Si Sub- Collector

p-SiGe

n-Si

Emitter

Base

Emitter

n-Si

Collector

Si Sub- Collector

p-SiGe

n-Si

Emitter

Ge %

Optical beam

Window in the emitter


Description Si/SiGe HPTs

Designed by ESYCOM and Ulm University , realized by Atmel Heilbronn

Absorption of light in base + a small part of emitter and collector (SiGe)but also in emitter and collector (Si)

Base

Emitter

n-Si

Collector

Si Sub-Collector

p-SiGe

n-Si

Emitter

Ge %

Optical beam

N++ – 2.1020cm-3

N++ – 2.1020cm-3

30nm: P+ – 2.1019cm-3

SiGe, 22%

Si

Si

20nm

10nm

100nm: N – 3.1018cm-3

300nm: N – 4.1016cm-3


108

109

1010

-20

-15

-10

-5

0

5

10

15

20

GO

M o

r r H

PT

in d

B

20

15

10

5

0

- 5

- 10

- 15

- 20 0.1 1 10 F in GHz

InP @ 0.94 µm ESYCOM

InP @ 1.55 µm LEST Brest

SiGe @ 0.94 µm ESYCOM

Physical simulation SiGe @ 0.85 µm

Opto-microwave gains with 50 ohms on bases and collectors

Measurements of GOM with InP and SiGe HPTs


• Improving the frequency response of Si/SiGe PTH by a focalisation of optical absorption in the base by optimisation of optical wavelength (Ph D)

Physical simulations : ESYCOMFuture technology : Atmel Heilbronn through University of Ulm




Amélioration de la fréquence de coupure optique FTOPT d’un PTHen n’éclairant que la base

FTOPT

FTOPT


Amélioration de la fréquence de coupure optique FTOPT d’un PTHen fonction de la longueur d’onde optique


• Improving the responsivity of a Si/SiGe by insertion in a horizontal

optical cavity constituted of adjustable Bragg reflectors (Ph D)

Optimisation of the number of blades of the Bragg reflector to

improve absorption: ESYCOM

MEMS Si technology for Bragg reflectors: ESYCOM




Bragg reflector Si/air

SiO2/air Si/Ge

Si/air Si

Lateral cavity system

• Vertical Bragg reflectors, DRIE on Si substrate Structure realized in ESYCOM/ESIEE

• Lateral cavity with insertion of a photodiode

• Lateral cavity with insertion of aSiGe phototransistor


- Structure 3: 1st refl. 3b, 2nd refl. 13 is interesting

Si slab thickness (µm)

0 5 10 15 20 25 300

10

20

30

40

50

60

70

80

90

100

1st refl 1b. 2 b. 3 b. 4 b. 5 b. 6 b.

6

5

4

3

Slab thickness (µm)

Ma

x. A

bso

rptio

n

Lateral cavity system: optimal structures

• The maximum absorption of each structure




• Study of a phase shifter constituted of two coupled optical cavitiesrealized with Bragg reflectors (Ph D)

Design of adjustable micro-photonic circuit: ESYCOM + IEF OrsayFuture realization with a MEMS technology on Si: ESYCOM


Variable phase shifter with a double Braggreflector double cavity Technology MEMS ESYCOM

Wrib

Light in

Light out

Substrat : Si

SiO2

Coupled double cavity


1542 1543 1544 1545 1546 1547 1548 1549 1550 1551 1552 1553 1554 1555 1556 1557 1558 -25 -24 -23 -22 -21 -20 -19 -18 -17 -16 -15 -14 -13 -12 -11 -10 -9

-8 -7 -6 -5 -4 -3 -2 -1 0

Longueur d'onde (nm)

Tra

nsm

ittan

ce (

dB)

avant déplacement DBR après déplacement DBR

CAVITY PHASE SHIFTER WITH BRAGG REFLECTORSApplication: Mach Zehnder modulator in micro-photonic circuit

1542 1543 1544 1545 1546 1547 1548 1549 1550 1551 1552 1553 1554 1555 1556 1557 1558 -100

-50

0

50

100

150

200

250

300

X: 1550 Y: 23.29

Longueur d'onde (nm)

Tra

nsm

ittan

ce-P

hase

en

degr

ès

X: 1550 Y: 146.5

avant déplacement DBR aprés déplacement DBR

123ΔΨ


y

z

x

Double cavité à réseau de Bragg

Vue 3D de la double cavité ( Vue plan yz)

H1

x

W

hn1

n0

y

n2

2iOSiS

10m

x

Vue en coupe de la double cavité ( Vue plan yx)

Vue en coupe de double cavité ( Vue plan yz)

SiO2

Substrat : Sii

y

Air

aird

dcav dcav Hh z

Sid

si

BSi n

dD

VIEW OF THE STRUCTURE


4 – Synthesis and prospects

Microwave photonic item:• First realization of a Si/SiGe microwave HPT• Necessity to have an access to different technologies: Atmel Ulm, OPTO+ Marcoussis, OMMIC Limeil Brévanne, UMS Orsay-Ulm• Direct acces to ESIEE MEMS Si technology for micro-photonic circuits• Measurements realized in Brest, Orsay, Marne la Vallée and Paris

ESYCOM:• Many contacts with other items of ESYCOM• Also contacts with other microwave photonics teams in Paris (Paris VI)

esycom 5 avril 2005 c. r. 1 equipe systemes de communication et microsystemes : esycom / ea 2552...

Documents

configuration of esycom

origin of esycom slide

esycom ea

configuration of esycom

esiee photonics

rgecoms slide

rumelhard slide

technology esiee