ESTREMO

• ERC (Europen Research Council) Starting Grant Research proposal

• Partecipanti1. ARCES (Advanced Research Center on Electronic Systems),

Facoltà di Ingegneria, Università di Bologna

2. CNR-IMM - Bologna

3. Texas Instruments, Inc., Dallas, Texas, USA

Enhancement of conductance in integrated power devices by means of strain effect and modulation techniques

ESTREMO

• Com’è nato il consorzio– collaborazione fra ARCES e T.I. USA già esistente sullo studio

di dispositivi per applicazioni Smart Power– limitazioni nella conduzione dei transistor DMOS

» “… velocity saturation effects in the drift region limit the device conductance, leading to a detrimental reduction of the maximum current drive at high voltages and to a premature current saturation…”

– Nel progetto si indagheranno due aspetti• strain engineering • conductance modulation

ESTREMO

• Comparison of the turn-on characteristic of the reference rugged LDMOS with that of a “strained” one. A 5-MPa tensile stress along the transport direction is applied under the STI region.

ESTREMO

• Coinvolgimento IMM– Misure di deformazione reticolare in silicio

• CBED• LACBED• NBD (Nano Beam Diffraction)

– Misure in strutture ‘grandi’• condizioni più rilassate per la misura• possibilità di ottenere geometrie ‘ad hoc’ da T.I.

– strain uniassiali– possibilità di sviluppo misure in campi di strain rapidamente

variabile

• È stata esplicitamente richiesta da ARCES la possibilità di inserire nel progetto una parte di sviluppo metodologico della misura di strain

ESTREMO

CBED LACBED NBD

ESTREMO – descrizione del lavoroWP Title WP Leader

WP1 New concepts for strain engineering and conductance modulation ARCES

WP2 Device characterization and strain measurements ARCES/IMM

WP3 Test pattern fabrication TI

ESTREMO – WP1

Task Title Months

T1.1 Acquisition of simulation tools for process-induced strain engineering. M1-M3

T1.2Investigation on locally strained devices with different crystal orientation and geometrical parameters. M4-M36

T1.3 Investigation on different conductance modulation approaches. M4-M36

T1.4 Development of new models for the reliability analysis in LDMOS. M4-M36

T1.5 Physical design of test structures and devices to be realized in test chip #1 M4-M8

T1.6 Physical design of best devices based on new concepts to be realized in test chip #2 M14-M18

T1.7 Physical design of best devices based on new concepts to be realized in test chip #3 M24-M28

ESTREMO – WP2-WP3Task Title Months

T2.1 Electrical characterization of devices fabricated in test chip #1. M12-M14

T2.2 Microstructure analysis of test modules #1 M12-M16

T2.3 Electrical characterization of devices fabricated in test chip #2. M22-M24

T2.4 Microstructure analysis of test modules #2 M22-M26

T2.5 Electrical characterization of devices fabricated in test chip #3. M32-M34

T2.6 Microstructure analysis of test modules #3 M32-M36

T2.7 Development of TEM/CBED measurements of non uniform strain fields. M13-M36

Task Title Months

T3.1 Technology setup and layout design of test chip #1. M4-M8

T3.2 Fabrication of test chip #1. M8-M12

T3.3 Technology setup and layout design of test chip #2. M14-M18

T3.4 Fabrication of test chip #2. M18-M22

T3.5 Technology setup and layout design of test chip #3. M24-M28

T3.6 Fabrication of test chip #3. M28-M32

ESTREMO – Gantt chart e m/mY 1 Y 2 Y 31 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36

T1.1 T1.2T1.3T1.4

T1.5 T1.6 T1.7T2.1 T2.3 T2.5

T2.2 T2.4 T2.6T2.7

T3.1 T3.2 T3.3 T3.4 T3.5 T3.6

WP no. Y1 Y2 Y3 Total(P1)

Y1 Y2 Y3 Total(P2)

Y1 Y2 Y3 Total(P3)

Total(per WP)

ARCESIMM-CNR TI

WP1 35 36 36 107 0 0 0 0 0 0 0 0 107

WP2 4 6 6 16 6 21 21 48 0 0 0 0 64

WP3 0 0 0 0 0 0 0 0 2 2 2 6 6

Total 39 42 42 123 6 21 21 48 2 2 2 6 177

ESTREMO - costs

 Cost Category

Year 1[1] Year 22 Year 32

Total (Y1-3)2

Total Costs of project:

(by year and total) 333780 325860 325860 985500

Cost category Year 1 Year 2 Year 3 Total

Research staff 23200 37100 37100 97400

Short-term staff 0 43700 43700 87400

Technical staff 4200 8500 8500 21200

Total personnel 27400 89300 89300 206000

Travel 5000 5000 5000 15000

Total other costs 5000 5000 5000 15000

Total direct costs 32400 94300 94300 221000

Indirect costs 6480 18860 18860 44200

Total costs 38880 113160 113160 265200