epc2107 epc2107 – enhancement-mode gan power transistor … · 2020. 5. 19. · synchronous...
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eGaN® FET DATASHEET EPC2107
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1
VDS , 100 VRDS(on) , 390 mΩID , 1.7 A
EPC2107 eGaN® ICs are supplied only inpassivated die form with solder bumps Die Size: 1.35 mm x 1.35 mm
Applications • High Frequency DC-DC Conversion • Class-D Audio • Wireless Power (Highly Resonant and Inductive)
Benefits• Ultra High Efficiency• Ultra Low RDS(on)• Ultra Low QG• Ultra Small Footprint
EFFICIENT POWER CONVERSION
HAL
EPC2107 – Enhancement-Mode GaN Power Transistor Half-Bridge with Integrated Synchronous Bootstrap
SBTST
DGrev
Q1
Q2
1 7
4
5
8
Q3
23
6
9
GBTST
DBTST Gupper Positive
GroundGlower
Out2
Out1
EPC2107 – Detailed Schematic
Maximum Ratings
DEVICE PARAMETER VALUE UNIT
Q1 &
Q2
VDS
Drain-to-Source Voltage (Continuous) 100V
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120
ID
Continuous (TA = 25˚C, RθJA = 60°C/W) 1.7A
Pulsed (25°C, TPULSE = 300 µs) 3.8
VGS
Gate-to-Source Voltage 6V
Gate-to-Source Voltage –4
TJ Operating Temperature –40 to 150°C
TSTG Storage Temperature –40 to 150
Q3
VDS
Drain-to-Source Voltage (Continuous) 100V
Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120
ID
Continuous (TA = 25˚C, RθJA= 100°C/W) 0.5A
Pulsed (25°C, TPULSE = 300 µs) 0.5
VGS
Gate-to-Source Voltage 6V
Operating Temperature –40 to 150
TJ Storage Temperature –40 to 150°C
TSTG Storage Temperature –40 to 150
Thermal Characteristics
PARAMETER TYP UNIT
RθJC Thermal Resistance, Junction-to-Case 6
°C/WRθJB Thermal Resistance, Junction-to-Board 33
RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 81
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
eGaN® FET DATASHEET EPC2107
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 2
Static Characteristics (TJ= 25˚C unless otherwise stated)DEVICE PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Q1 & Q2
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.3 mA 100 VIDSS Drain-Source Leakage VDS = 80 V, VGS = 0 V 0.05 0.25 mA
IGSS
Gate-to-Source Forward Leakage VGS = 5 V 0.1 1 mAGate-to-Source Reverse Leakage VGS = -4 V 0.05 0.25 mA
VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 0.1 mA 0.8 1.6 2.5 VRDS(on) Drain-Source On Resistance VGS = 5 V, ID = 2 A 250 390 mΩVSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V 2.5 V
Q3
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.125 mA 100 VIDSS Drain-Source Leakage VDS = 80 V, VGS = 0 V 0.02 0.1 mAIGSS Gate-to-Source Forward Leakage VGS = 5 V 0.1 1 mAVF Source-Gate Forward Voltage IF = 0.2 mA, VDS = 0 V 2.7 VVGS(TH) Gate Threshold Voltage VDS = VGS, ID = 0.1 mA 0.8 1.7 2.5 VRDS(on) Drain-Source On Resistance VGS = 5 V, ID = 0.05 A 2100 3300 mΩVSD Source-Drain Forward Voltage IS = 0.1 A, VGS = 0 V 2.9 V
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)DEVICE PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Q1
CISS Input CapacitanceVDS = 50 V, VGS = 0 V
21 25
pF
CRSS Reverse Transfer Capacitance 0.2COSS Output Capacitance 9.2 14COSS(ER) Effective Output Capacitance, Energy Related (Note 2)
VDS = 0 to 50 V, VGS = 0 V 13
COSS(TR) Effective Output Capacitance, Time Related (Note 3) 18RG Gate Resistance 0.7 ΩQG Total Gate Charge VDS = 50 V, VGS = 5 V, ID = 2 A 190 230
pC
QGS Gate to Source ChargeVDS = 50 V, ID = 2 A
77QGD Gate to Drain Charge 41QG(TH) Gate Charge at Threshold 49QOSS Output Charge VDS = 50 V, VGS = 0 V 900 1350QRR Source-Drain Recovery Charge 0
Q2
CISS Input CapacitanceVDS = 50 V, VGS = 0 V
21 25
pF
CRSS Reverse Transfer Capacitance 0.2COSS Output Capacitance 14 21COSS(ER) Effective Output Capacitance, Energy Related (Note 2)
VDS = 0 to 50 V, VGS = 0 V 19
COSS(TR) Effective Output Capacitance, Time Related (Note 3) 25RG Gate Resistance 0.7 ΩQG Total Gate Charge VDS = 50 V, VGS = 5 V, ID = 2 A 190 230
pC
QGS Gate to Source ChargeVDS = 50 V, ID = 2 A
77QGD Gate to Drain Charge 41QG(TH) Gate Charge at Threshold 49QOSS Output Charge VDS = 50 V, VGS = 0 V 1250 1875QRR Source-Drain Recovery Charge 0
Q3
CISS Input CapacitanceVDS = 50 V, VGS = 0 V
7 8.4
pF
CRSS Reverse Transfer Capacitance 0.02COSS Output Capacitance 1.6 2.4COSS(ER) Effective Output Capacitance, Energy Related (Note 2)
VDS = 0 to 50 V, VGS = 0 V 2.2
COSS(TR) Effective Output Capacitance, Time Related (Note 3) 2.7RG Gate Resistance 4.8 ΩQG Total Gate Charge VDS = 50 V, VGS = 5 V, ID = 0.05 A 44 55
pC
QGS Gate to Source ChargeVDS = 50 V, ID = 0.05 A
20QGD Gate to Drain Charge 4QG(TH) Gate Charge at Threshold 18QOSS Output Charge VDS = 50 V, VGS = 0 V 134 200QRR Source-Drain Recovery Charge 0
Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 3: COSS(ER) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
eGaN® FET DATASHEET EPC2107
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R DS(
on) –
Dra
in-to
-Sou
rce R
esist
ance
(mΩ
)
VGS – Gate-to-Source Voltage (V) 3.0 2.5 3.5 4.0 4.5 5.0
Figure 3b (Q3): RDS(on) vs. VGS for Various Drain Currents
ID = 0.05 AID = 0.10 AID = 0.15 AID = 0.20 A
8000
6000
4000
2000
0
R DS(
on) –
Dra
in-to
-Sou
rce R
esist
ance
(mΩ
)
VGS – Gate-to-Source Voltage (V) 3.0 2.5 3.5 4.0 4.5 5.0
Figure 3a (Q1 & Q2): RDS(on) vs. VGS for Various Drain Currents
ID = 1.0 AID = 1.5 AID = 2.0 AID = 2.5 A
1000
750
500
250
0
I D –
Drai
n Cu
rrent
(A)
1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
25˚C125˚C
VDS = 3 V
VGS – Gate-to-Source Voltage (V)
Figure 2a (Q1 & Q2): Transfer Characteristics
25˚C125˚C
VDS = 3 V
3
2
1
0
I D –
Drai
n Cu
rrent
(A)
1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
25˚C125˚C
VDS = 3 V
VGS – Gate-to-Source Voltage (V)
Figure 2b (Q3): Transfer Characteristics
25˚C125˚C
VDS = 3 V
0.5
0.4
0.3
0.2
0.1
0
3
2
1
00 0.5 1.0 1.5 2.0 2.5 3.0
I D –
Drai
n Cu
rrent
(A)
VDS – Drain-to-Source Voltage (V)
Figure 1a (Q1 & Q2): Typical Output Characteristics at 25°C
VGS = 5 V
VGS = 4 V
VGS = 3 V
VGS = 2 V
0.5
0.4
0.3
0.2
0.1
0 0 0.5 1.0 1.5 2.0 2.5 3.0
I D –
Drai
n Cu
rrent
(A)
VDS – Drain-to-Source Voltage (V)
Figure 1b (Q3): Typical Output Characteristics at 25°C
VGS = 5 V
VGS = 4 V
VGS = 3 V
VGS = 2 V
eGaN® FET DATASHEET EPC2107
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Capa
citan
ce (p
F)
100
10
1
0.10 25 50 75 100
Figure 5d (Q2): Capacitance (Log Scale)
VDS – Drain-to-Source Voltage (V)
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
Capa
citan
ce (p
F)
0 25 50 75 100
Figure 5c (Q2): Capacitance (Linear Scale)
VDS – Drain-to-Source Voltage (V)
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
60
50
40
30
20
10
0
Capa
citan
ce (p
F)
0 25 50 75 100
Figure 5a (Q1): Capacitance (Linear Scale)
VDS – Drain-to-Source Voltage (V)
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
40
30
20
10
0
Capa
citan
ce (p
F)
100
10
1
0.10 25 50 75 100
Figure 5b (Q1): Capacitance (Log Scale)
VDS – Drain-to-Source Voltage (V)
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
1000
750
500
250
03.02.5 3.5 4.0 4.5 5.0
Figure 4a (Q1 & Q2): RDS(on) vs. VGS for Various Temperatures
25˚C125˚C
ID = 2 A
R DS(
on) –
Dra
in-to
-Sou
rce R
esist
ance
(mΩ
)
VGS – Gate-to-Source Voltage (V)
8000
6000
4000
2000
03.02.5 3.5 4.0 4.5 5.0
Figure 4b (Q3): RDS(on) vs. VGS for Various Temperatures
25˚C125˚C
ID = 0.05 A
R DS(
on) –
Dra
in-to
-Sou
rce R
esist
ance
(mΩ
)
VGS – Gate-to-Source Voltage (V)
eGaN® FET DATASHEET EPC2107
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Figure 6a: Output Charge and COSS Stored Energy
Q OSS
– O
utpu
t Cha
rge (
nC)
E OSS
– C O
SS St
ored
Ener
gy (μ
J)
0.25
0.20
0.15
0.10
0.05
0.00
10
8
6
4
2
00 20 40 60 10080
VDS – Drain-to-Source Voltage (V)
Figure 6c (Q3): Output Charge and COSS Stored Energy
Figure 6a: Output Charge and COSS Stored Energy
Q OSS
– O
utpu
t Cha
rge (
nC)
E OSS
– C O
SS St
ored
Ener
gy (μ
J)1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
50
40
30
20
10
00 25 50 75 100
VDS – Drain-to-Source Voltage (V)
Figure 6a (Q1): Output Charge and COSS Stored Energy Figure 6a: Output Charge and COSS Stored Energy
Q OSS
– O
utpu
t Cha
rge (
nC)
E OSS
– C O
SS St
ored
Ener
gy (μ
J)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
70
60
50
40
30
20
10
00 20 40 60 10080
VDS – Drain-to-Source Voltage (V)
Figure 6b (Q2): Output Charge and COSS Stored Energy
Capa
citan
ce (p
F)
0 20 40 60 80 100
Figure 5e (Q3): Capacitance (Linear Scale)
VDS – Drain-to-Source Voltage (V)
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
8
7
6
5
4
3
2
1
0
Capa
citan
ce (p
F)
100
10
1
0.1
0.01
0.0010 20 40 60 80 100
Figure 5f (Q3): Capacitance (Log Scale)
VDS – Drain-to-Source Voltage (V)
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
eGaN® FET DATASHEET EPC2107
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Figure 9b (Q3):Normalized On-State Resistance vs. Temperature
ID = 0.05 AVGS = 5 V
Norm
alize
d On
-Sta
te R
esist
ance
RDS
(on)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6 0 25 50 75 100 125 150 TJ – Junction Temperature (°C)
Figure 9a (Q1 & Q2):Normalized On-State Resistance vs. Temperature
ID = 2 AVGS = 5 V
Norm
alize
d On
-Sta
te R
esist
ance
RDS
(on)
2.0
1.8
1.6
1.4
1.2
1.0
0.80 25 50 75 100 125 150
TJ – Junction Temperature (°C)
0.50 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I SD –
Sour
ce-to
-Dra
in Cu
rrent
(A)
VSD – Source-to-Drain Voltage (V)
Figure 8a (Q1 & Q2): Reverse Drain-Source Characteristics
3
2
1
0
25˚C125˚C
VDS = 3 V
25˚C125˚C
VGS = 0 V
0.50 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I SD –
Sour
ce-to
-Dra
in Cu
rrent
(A)
VSD – Source-to-Drain Voltage (V)
Figure 8b (Q3): Reverse Drain-Source Characteristics0.5
0.4
0.3
0.2
0.1
0
25˚C125˚C
VDS = 3 V
25˚C125˚C
VGS = 0 V
0 50 100 150 200
Figure 7a (Q1 & Q2): Gate Charge
V GS
– Ga
te-to
-Sou
rce V
olta
ge (V
)
QG – Gate Charge (pC)
ID = 2 AVDS = 50 V
5
4
3
2
1
00 10 20 30 5040
Figure 7b (Q3): Gate Charge
V GS
– Ga
te-to
-Sou
rce V
olta
ge (V
)
QG – Gate Charge (pC)
ID = 0.05 AVDS = 50 V
5
4
3
2
1
0
eGaN® FET DATASHEET EPC2107
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Single Pulse
tp, Rectangular Pulse Duration, seconds
Z θJB
, Nor
mal
ized T
herm
al Im
peda
nce
0.5
0.050.02
Single Pulse
0.01
0.1
Duty Cycle:
(Q1/Q2/Q3) Junction-to-Board
Notes:Duty Factor: D = t1/t2
Peak TJ = PDM x ZθJB x RθJB + TB
PDM
t1
t2
10-5 10-4 10-3 10-2 10-1 1 101
1
0.1
0.01
0.001
tp, Rectangular Pulse Duration, seconds
Z θJC
, Nor
mal
ized T
herm
al Im
peda
nce
0.5
0.1
0.02
0.05
Single Pulse
0.01
0.2
Duty Cycle:
(Q1/Q2/Q3) Junction-to-Case
Notes:Duty Factor: D = t1/t2
Peak TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
10-6 10-5 10-4 10-3 10-2 10-1 1
1
0.1
0.01
0.001
Figure 10a (Q1 & Q2):Normalized Threshold Voltage vs. Temperature
Norm
alize
d Th
resh
old
Volta
ge
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.600 25 50 75 100 125 150
TJ – Junction Temperature (°C)
ID = 0.1 mA
Figure 10b (Q3):Normalized Threshold Voltage vs. Temperature
Norm
alize
d Th
resh
old
Volta
ge
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.600 25 50 75 100 125 150
TJ – Junction Temperature (°C)
ID = 0.1 mA
Figure 11a Transient Thermal Response Curves
Figure 11b Transient Thermal Response Curves
eGaN® FET DATASHEET EPC2107
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Output
Q2
Q1
Q3
CBus
Gate Driver
Leve
l Shi
ft
5 V
Figure 14: Typical Application Circuit
0.08
0.06
0.04
0.02
0.00
-0.5
-1.0
-1.5
-2.0-2 -1 0 1 2 3 4 5 6
Figure 13 (Q3): Gate-Source Characteristics
25˚C125˚C
I G –
Gate
Curre
nt (m
A)
VGS – Gate-to-Source Voltage (V)
10
1
0.10.1 1 10 100
I D – D
rain
Curre
nt (A
)
VDS – Drain-Source Voltage (V)TJ = Max Rated, TC = +25°C, Single Pulse
Limited by RDS(on)
100 ms 10 ms 1 ms 100 µs
Pulse Width
25 µs
100 µs 50 µs
Figure 12 (Q1 & Q2): Safe Operating Area
eGaN® FET DATASHEET EPC2107
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DIE MARKINGS
YYYY2107
ZZZZ
TAPE AND REEL CONFIGURATION4mm pitch, 8mm wide tape on 7” reel
7” reel
a
d e f g
c
b
Dimension (mm) EPC2107 (note 1)
target min max a 8.00 7.90 8.30 b 1.75 1.65 1.85
c (see note) 3.50 3.45 3.55 d 4.00 3.90 4.10 e 4.00 3.90 4.10
f (see note) 2.00 1.95 2.05 g 1.5 1.5 1.6
Note 1: MSL 1 (moisture sensitivity level 1) classi�ed according to IPC/JEDEC industry standard.Note 2: Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole.
Dieorientationdot
Pin 1 isunder thiscorner
Die is placed into pocketsolder bump side down(face side down)
Loaded Tape Feed Direction
Pin 1 is under this corner
2107YYYYZZZZ EPC2107 2107 YYYY ZZZZ
Die orientation dotPart #
Marking Line 1Lot_Date CodeMarking Line 2
Lot_Date CodeMarking Line 3
PartNumber
Laser Markings
eGaN® FET DATASHEET EPC2107
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RECOMMENDEDLAND PATTERN (measurements in µm)
DIE OUTLINESolder Bump View
Side View
B
A
d c c dc
c Pad 1 is Gate1 (Q1) Pad 2 is Gate2 (Q2)Pad 3 is Gate 3 (Q3)Pad 7 is Drain1 (Q1)Pad 5 is Drain2 (Q2)Pad 6 is Drain3 (Q3)Pad 4 is Source1 (Q1)Pad 8 is Source2 (Q2)Pad 9 is Source3 (Q3)
3 6 9
2 5 8
1 4 7
165
+/-
17
815
Max
(625
)
Seating Plane
RECOMMENDEDSTENCIL DRAWING (measurements in µm)
DIM
Micrometers
MIN Nominal MAX
A 1320 1350 1380B 1320 1350 1380c 450 450 450d 210 225 240e 187 208 229
Information subject to change without notice.
Revised May, 2020
Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others.
eGaN® is a registered trademark of Efficient Power Conversion Corporation.EPC Patent Listing: epc-co.com/epc/AboutEPC/Patents.aspx
The land pattern is solder mask definedSolder mask is 10 μm smaller per side than bump
X9
1350
1350 2 5 8
3 6 9
1 4 7
225 225
450 450
450
450
200 +20 / - 10 (*)
* minimum 190
Recommended stencil should be 4 mil (100 µm) thick, must be laser cut, openings per drawing.
Intended for use with SAC305 Type 4 solder, reference 88.5% metals content.
Additional assembly resources available at https://epc-co.com/epc/DesignSupport/AssemblyBasics.aspx
250
1350
1350
225 225
450 450
450
450
R60