electrothermal modeling with geant4 + comsol integration
TRANSCRIPT
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Ricardo Peterson Department of Electrical Engineering Extreme Environment Microsystems Lab (XLab) Stanford University
PI: Prof. Debbie Senesky Department of Aeronautics and Astronautics Department of Electrical Engineering (by Courtesy)
Electrothermal Modeling with Geant4 + COMSOL Integration
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Irradiation-induced M-S Interface Degradation
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As-DepositedStructure A0er120MeVAuirradia7on
R. Verma, C. Lal, and I. Prabha, “Formation of metal silicide by swift heavy ion induced mixing at Mn / Si interface,” Integr. Med. Res., vol. 3, no. 3, pp. 257–263, 2014.
Mn Mn
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Time Evolution of Defects Comparable Duration of Thermal Spikes
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-Tang,D.,Mar/n-Bragado,I.,He,C.,Zang,H.,Xiong,C.,Li,Y.,…Zhang,J.(2016).Timedependentmodelingofsinglepar/cledisplacementdamageinsilicondevices.MicroelectronicsReliability,60,25–32.hMp://doi.org/10.1016/j.microrel.2016.03.004-A.Benyagoub,“Irradia/oneffectsinducedinsiliconcarbidebylowandhighenergyions,”Nucl.InstrumentsMethodsPhys.Res.Sect.BBeamInteract.withMater.Atoms,vol.266,no.12–13,pp.2766–2771,2008.
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GOAL: To Simulate SETs and Thermal Spikes
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GEANT4 OUTPUT —> COMSOL
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Example: 4H-SiC Schottky DiodeXe 996 MeV/n
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100V(OhmicContact)
0V(Scho2kyContact)
Example: 4H-SiC Schottky Diode
1um (Region Depleted)
ND=1E16 cm-3
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Xe 996 MeV/n
1um (Region Depleted)
ND=1E16 cm-3
log10(Ne)100V(OhmicContact)
0V(Scho2kyContact)
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Temp. (K)
Temp. Distribution
100V(OhmicContact)
0V(Scho2kyContact)
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Ar 361 MeV/n
Xe 996MeV/n
Cu 566MeV/n
Kr 750MeV/n
LET (MeV-cm2/mg)
11 23 34 65
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Current & Temperature vs. Time
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Temperature along Particle Track & Interface
12t ~ 10 ps
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Extending Framework to Other Applications
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1GeV/n Ar Ion
12um
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MOSFETs
12um
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ChargeCollec+onRegion
{ChargeCollec+onRegion
{
0 2 64Par$cleStrike[!m]m] 1 3 5Particle Strike Location [um]0 6
Charge[fC]Collected
80
60
40
20
Charge Collected [fC]@ Drain
20
40
60
80
Vdd = 2 VVgs = 0 V1GeV/n Ar Strike
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INTEGRATION WITH COMSOL’S APPLICATION BUILDER
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Thank You
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