electrical-engineering-objective-questions-part-6.pdf

13
www.examrace.com I C.S.E I ol IJ ELECTRICAL ENGINEERING 11 J. 2 3. 4. 5, A single phase full y c on trolled b ndgc tS supplied at 1 20V rms . Who! will be the average load voltage for a del ay nllgle of 'lll 0 assuming cootinuo\15 load current'i a. () v b 70.4 v c 1112 v d. 170V A si ngle-phase ac. I 'Ohnge co ntroll ed feeds a pure inducti ve loade 111e conduction penod of o for u fcnng l)ngle of a (m d1c range !)()• <a < 1 81) "1 is a. ;r -a b 211 -a c. rr-Za d 2(tc- a) A .3- pha. 'e invener IS fM fl'llm a 6<10 V source. I" or a stnr·connected resisti 1 e l o;ld J 5 Q/ phase, the mJS load current for J 2U" 1s 11, 32. (;6 A b. lt\.33A c, 8 ,16A d. 12.33A Whidt one ol' U1c fo ll o111 ng pans IS no t cocrc'Ctlv uUltd>ed? a, Oxidation . Masking b. ton-implarttation . Oopmg c. Metllllization • lsolmi ou d. PhotolithOgraphy · Pallering Foll owing methods are for isolatiott in IC ti 1bri cnlion· 1 0.-ida isola tion 2. Resisti1 3. P·n JUhcllon tso lati on l'be correct sequen ce in the descern!mg order or the magnitude or !solution oblamed 1s a. 3_1,2 b 1,3,2 c. 1.2 ,3 d 3.2.1 Whnt is the com.'l;t or J)r1JCC$S steps gh-en below during the fabrication a polysflicon gate MOSI'IIT/ I Sour ce and drnio difT-usion 2 Pield I!Jltl atuve area deil nition 7 8. 'I, 10 . 3, Gate polysilicon deposition and poUeming 4. Ga te Select the correct MSIYer us ing the codes given bei Q1v: a. 1. 2..3.4 b 1. '1.3, 2 c. I d. 2.1.4,3 CZ methotl m crysL'll gro11 th pro1• 1des a. A pol yorvstrultne mgot b. A slllgle crystal 1ngo1 wllh controlled. impu ri ties c. An ingot ,,, u , Jrregular arrnngerue111 ot moms d A single CJY>tal ingot wttb unwanted impuri ties Wbicb of the fo ll oMng are tbo val id reasons for polishing silicon wafer used [o r IC fabril:alion'/ I To mal.e ttw surface cleru1 2 To remo ve the surf a ce damaged si licon layers 3. To mal.e the surface Oa t. 4 To J mp rove cooduttl\'lty of the surface layers 5. To make bo th s•des more parallel Select tl>e correct answer using codes J!ll'e/1 bel ow· a. I,2 onil 3 b. and 5 c. l. -1 and S II 2, 3 and 4 30% KQH solution is used to etch (. IOU) ori emed silicon through a 100 11 m t j)(l fl m square wmdow. The other reg1ons ol' silicon toutside the 1vindo11) are protected b} a m."!Sk. artd do not get etched. 1'he etdl profile 1\111 ha1 e a. Isotropic contour b Vertical side wnll c, Se1•ere 1n 1dercu1 d A V - g-roove shape Consider the followi ng statements I. Lo\J·IInp l anlatron is less pro ne 10 contamination compared to diffusiOn.. 2. ln di lfUSIOJ'I , peak Impuri ty concentrati on ts always located Il l the www.examrace.com

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Page 1: Electrical-Engineering-Objective-Questions-Part-6.pdf

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I C.S.E Pt~2003 I ol IJ

ELECTRICAL ENGINEERING 11

J.

2

3.

4.

5,

A single phase fully controlled b ndgc tS supplied at 120V rms. Who! will be the average load voltage for a delay nllgle of 'lll0 assuming cootinuo\15 load current'i a. () v b 70.4 v c 1112 v d. 170V A single-phase ac. I'Ohnge controlled feeds a pure inductive loade 111e conduction penod of o th~·ristor for u fcnng l)ngle of a (m d1c range !)()• < a < 181)" 1 is a. ;r- a b 211 -a c. rr-Za d 2(tc- a) A .3-pha.'e invener IS fM fl'llm a 6<10 V source. I" or a stnr·connected resisti 1 e lo;ld J 5 Q/phase, the mJS load current for J 2U" cond~ction 1s 11, 32.(;6 A b. lt\.33A c, 8,16A d. 12.33A Whidt one ol' U1c follo111ng pans IS not cocrc'Ctlv uUltd>ed? a, Oxidation . Masking b. ton-implarttation . Oopmg c. Metllllization • lsolmiou d. PhotolithOgraphy· Pallering Following methods are u~ed for isolatiott in IC ti1bricnlion· 1 0.-ida isolation 2. Resisti1 ~isolation 3. P·n JUhcllon tsolat ion l'be correct sequence in the descern!mg order or the magnitude or !solution oblamed 1s

a. 3_1,2 b 1,3,2 c. 1.2,3 d 3.2.1 Whnt is the com.'l;t s~.~quence or J)r1JCC$S

steps gh-en below during the fabrication <;~f a polysflicon gate MOSI'IIT/ I Source and drnio difT-usion 2 Pield o~d:tuon I!Jltl atuve area

deil nition

7

8.

'I,

10.

3, Gate polysilicon deposition and poUeming

4. Gate oxida~on Select the correct MSIYer using the codes given beiQ1v: a. 1. 2..3. 4 b 1. '1.3, 2 c. 2,4~3. I d. 2.1.4,3 T~e CZ methotl m crysL'll gro11 th pro1•1des a. A polyorvstrultne mgot b. A slllgle crystal 1ngo1 wllh controlled.

impurities c. An ingot ,,,u, Jrregular arrnngerue111 ot

moms d A single CJY>tal ingot wttb unwanted

impurities Wbicb of the folloMng are tbo valid reasons for polishing silicon wafer used [or IC fabril:alion'/ I To mal.e ttw surface cleru1 2 To remove the surface damaged silicon

layers 3. To mal.e the surface Oat. 4 To Jmprove cooduttl\'lty of the surface

layers 5. To make both s•des more parallel Select tl>e correct answer using ~te codes J!ll'e/1 below· a. I ,2 onil 3 b. 2.~ and 5 c. l. -1 and S II 2, 3 and 4 30% KQH solution is used to etch (.IOU) oriemed silicon through a 100 11 m • tj)(l fl m square wmdow. The other reg1ons ol' silicon toutside the 1vindo11) are protected b} a m."!Sk. artd do not get etched. 1'he etdl profile 1\111 ha1 e a. Isotropic contour b Vertical side wnll c, Se1•ere 1n1dercu1 d A V - g-roove shape Consider the following statements I. Lo\J·IInplanlatron is less prone 10

contamination compared to diffusiOn.. 2. ln di lfUSIOJ'I, tl•~ peak Impurity

concentration ts always located Ill the

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12

13.

! 14

•urfac't whTie i~ ion-implnnuuion peal posi11()n eon b..· tnihlrc'<l

3 IOn· implfiiiiOiil)ll f~ II simpler find les.• <~pl."'llsivc pr\lCCsS lhon dilTusion

4 TI1e subs1m1e is dlm•nscd aOo..'f ion· inlplllnllll[,,n_

Which of I IIese gltll~mmL• tu'l: eurre~•· 11, I nud 2 b. 2und 3 c 1,1 nnd 4 ci 1.3 nnd 4 (he ffi31() advwllll!,'<! Of plusrna·...,."SISII:d chemical vapour dcpo,;luon process over ordumry ch«nllcal VBf>Our depos111on 1s a. Plesma·DSSISied depoSlliOO lS raster b Pla~ma-ass•s•ed def)OSI1Jon resuiL< 10

ntms " l'h beu~r s•oich•omelC) c Depos11ton rate r.; con1ralled bener m a

plasma- as.~i~ted procc-s~ d. The deposttion 1empemture ~• nwch

less in n J)lasma· a.'iSiswd process A 11er 1he circuit elemems are f.1hncated in an IC ond the surface is passh <Md A p~ttcm of AI film •s dcpoJilcd u~i11g phmnlflhO!!.nl(lhy IC)

o, Conncti ihe VIIIII.IUS lennlnnl~ of cuxu•l componettl$ in n pn:dclcnnincd ~~

b Pt\ll.o<l the <urfiJce lorn• nx•dalion due 10 nlrrlo$phori<> o.,posurc

c PJQI~cr n mc!Ul sudilcl.' to be l.l.'led JL'

he:~l 3ulk d. Provtde u metal surfcu:e for bondu1g

i he cl'up Cons1de:r lhe l'ulluwlll!.\ slatemems nbout Fermi energy In a 1111!\lll: I. ll 1s the energy of the lugbest ot'CuplCd

e.lectron Slate at zero Kelvin. 2.. 11 IS tile energy level or eJecaroo& Ill

\\•hith probabilily of o~cupation is o11e hnll' u1 M)' lemp . .-mturc.

3 AI tempemntre above zc:r•l Kel~in, some M I he c'llet!l) Sillies abnw Fermi en~fl!Y are occupil'<l and some states heh>1v il are efl'lp!Y

Whkh of these smtemems isl'are correct7 u I 2and 3 h Onlyl c Onl)' i d. 2 nnd 3 Match LIS! I w1Jl1 L1st II and s.:lccl the correct nnswe.r List I '\ Conunuuy ~oquauon

15

I(>

17

B PNSson · ' Cl1Ulltion C Efnslcin's equation o o ;n·,l$il)n Cllrr.:nt "'llllll•llll U.1"t H

• nr 11

I El~..: lri~ lidd mii!IISity Mth ~hnrgc \lens it)

l Mmonlv cumcr diJTus•on curulllu1l witluncibll•ty

3 Mmonl) tarrier ~onctmtrntlon !!flldJonl -1 T ime ru1.: or ehn11!lc M mmorhy o1mcr

a b c d

tlens11y A 4 2 4 2

13 3 I

c 2 4 2

D I 3 3 1

For the gwen t'ICCIUL (JJ =3rud Is 11' V 1s mkcn as reference. lhc 1JhBsor of I os l}JVCn l>y a 1 ... 90• b 3.t::llO•

C 5L f10"

d .fiL -H0

For •he _~;1ven • u c•rc~u •f 1hc: vulue of C IS t'h<1sen ~uch lhal V and I nn:: m phase. then I 1 lead lz b)• an rulJ!Ie givl!n by n. o~

h 45° c 90° d 135 '

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Ill

I<J

10

:!l

v(t): 1 60~111 (U/I t- 10") and

l( t )=5siu(t<N-20°) , then the ruacth ~ power absorbed by the black box N IS !,'lVen by8 n. 50 Vars b. 100 vurs c. 400 Vnrs d 100 Vms

s I il -· :\--ww---.--

U; =::11

1lte swttch m the circuli is closed AI t 0 rhe current through the bnttCl)' nl t = O'" and 1 = <n is. re<peclivel) a. lOA and lOA b. OA and LOA c lOA and OA tL UA wtd UA llle Laplooe lrllJl1iJorrn qf lhc voltuge across the CU[lllCitor of I) 5F IS

I ( •)~ s+ l · ·~ ~; 'Ht J

Then the value of the Cltn'ent tiJri!Hgh the capacitor a1 (H)' is !live4n (!:J a OA b. O.SA c. l 0 A (l l.St\ lf u(t) and S (t) are the s1q> function nod Jh~ im1ll1lse functiOn respecnvely aJ 1 - 0, Jhcn the Laplace lriln~forrn of Jhl! funct ion flt) - O(t - J) 6(1)1SOqtllll to l1. I b. lis c 0

I d.-

HI An nc sinuso1dal vohllb>e source Jli connected across 11 s<mes clrcuil c~nsisring of a resl:stor and a capacitor The nns value or the voltage across the resi!'tor and cnpacftor are I 00 V ami 2{)0V respecll\CI) Inc n1J> l·alue ol'the vuhngc uf the sour~~ JS

3. .300¥ b wo..fS1· c. lliO.§r r

22. d IOOV

i 1-----,.1'<20. dU/<1<>< 1~ 1 11•·• I :00~

""

1 ul I)

" ,,...,.~

l'bc frequency rcspon.l<! ror n ll<l!W<llk fl!ltolion Hlsl is g1vcn abo~c lll sJ is J.UVCil by ,, II. -

•+ I JO,

b­.<+I 10

" -.<+I d I

N(.<+t) Cons1dcr the \'1 (t ) = 2 SI!I;T/ +co>4m

X 1 (t)= srn5m +3SIO 13,T/

a Bmh the s1gnals 11re periodio. b B01h the Signals arc 1101 penod1c

s•gnals and

c. X 1 IS periodic. bul XzlS not penodJc d X 1 IS 1101 p;:riodic. bul X~ IS penod1c

24. Wluth ouc of the fol1owU1g pam. IS uot oon..:atiY JI!Uithed?

(Syst.:nt fllll'ibutc ()f (Sys1o.n Dcs<:nptl\111 wllh rlui Oiscretc·Tinac inpul (nJ nllil nutpul ~-vs1em) y ' o' n. Causal - l' (n) = ol'(n- 1)

c. Stable Y (n),.h (n} +.S>~ (n-1}

d 1 1111<.~1!1VUI'Illnl : !' (n) ={ Y(n - 1)}1

15 The. Ster re$poi\.<C-0(Cl 5Y'\CIII is t '(t) = 1- 51' '+ 10v·-" - 6c•-1'. The 1111pulsc re:)ponse of I he. !SY~ttrm l' 3. se- - 10t.'·:r ... l!k'-11

b Sa'-+ 10t1' >181".,. c. ;,.- + 10r-11 t Ilk • d 5e +10~ 11 - 1& "

16. Winch o~ of the followmg Is 11 hneur system?

a ••(r) ,. l u(t) h 1' (1) 211(1)+5

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c. ,1'(1)=1111 (1)

d. J.•(1)2Ir1 (1)+5

17, The system Ci(.v) 1

O.S is excited by s +s-1

a unit step inpui , The sieady stata output is a, 0.8 b. 0.4 c, -OA d. Unbr.>Unded

18. The Laplace. transfonn of e"' coscl/ is (.•·+a)

a (,<+a}' +a'

(.<-a) b. 2

(; - a) +a' ($ +a)

c. 7 (s-a ) +a'

(s - a) d. l

(s+a) +a1

29 Match List I with List 11 and select the coJTec~ answer;

30,

List I (F'uoction ) A1 te .,.. B. .>;:(at)

C. f ><(Z)I' (t - Z)d:

D d x(t ) ' di

List II (Laplucc Transform) t • .vX(.v)

2.. X(.W(<) ~

1 J ,

(s+ a)'

4. A' ( r)

' 5. .!.~( ~)

II tl

A B c a. I 2 ~

b. 3 5 2 e. I 5 1 d. 3" 2 ~

D 3 i 3 1

(;i-'cn 0 un ity feedback system

G(s) " the value of K .v(.v+4 ) ·

damping ratio of 0.5 is a. I

with

for

b 16 c. 4 d, 2

I o[ 13

J L A muty feedback control syste111 has forward patJa tmnsfer funcl ion G(s) given

b ( ) = ....,..,....:..:' Oii..,..+~Y )........,. yt.r .r -s2(s+ 12}(N5)

Tbc Steady-state error due to w1it parabolic i!1pul r(l) = t,/2U (t) IS a. Zero b. 0.1 c. I,U d. lnfmJte'

32. for the control system witlt

U(,•)H (s) K (s+2) s(.•' +2s +3)

The type nwnber l~ a. I b. 1 0. 3 d. 4

33 The root locus pin\ of a system having open loop transfer function

t'( )H() K{.v+ IO)(•··r70) will J ' v s' (s·~ J OO)(s+ 200)

have angle of asymptotes as ~- <io•. too• b. 60".180°.J00o c. 60°, 120~. 1 80°

d. 60".90", 120" 34. Cousidcr ll1e

equniion:2s' + ~' +3..-' +Ss+ 10 :{J

35 .

The number tlf TOOlS this cquatinn h:ls tn ll1e right·half of s•pla1ie is a. One b. Two· e. '111tee d Four

The feedback syste.m shown above is stable tbr all values ofK given by a. K>O b. K<O e. O<K<~2 d. O<J..-<GQ

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36 llte Nyquist plot ()f u syMem passes through C- l j 0) ll\linl ill the GH plane The phase margin oJ'the system is u, > () I> Zem c < () d.. Jnfinite

37 II plun~ wave Jll op~Jgatcs 111 n dlrccl l•ill

huvmg dlr"'lUOII COSine!< (t / ../i,TI-/2,tt)

I he equatton or the phase ITonL• IS a XV = CMSUlllt b XIY• conSUU\1 ~ X+ Y = COOStUIII

d X -Y constant 3S \1/hich one vr tho following mo<Jes docs

nat e~lsts on a R-cWJl!lUint wuvcguid<' ' a. TM11 b l'fiu• e rF...,, d. rJ\1oo

39 A parallel plate 11 aveguido hus d plait spa.:mg ..,r I 0 mm <lltd " fi ll.:d i:llmple•~l} 111th u. dielectne mcdJum n r relnth•c pcrmluivlty 9 0 rhe cut-on 1\-cqucnC)• of th• t"orllt (lowesl} TE mud.: 1s n. I 0 GHz b l.S GIJL c, S OGHz d lu.!lGitz

40 11~e umt n<>nnol to lhe cquip<)lcnl swlbte \1' ~collStunt C' •o;. "' g.:ne.rul gwl:ll by

-I I

d. f{l

b - 'Vfjl lVIII I

"' ..!f._ I Ill" I

d *"'"' IV~ I

.,.

~

0

... .....-.

I~

yv. 0

ror smusoJdal rnput vohngc having u pcnk ~alue I'~ > ~;. the outru1 for the given c1rouit 11 ill be

+!.

AB tlfl AB AB

:S uf 13

_, . '• tciJ(\- / }-(d) ' 1-----

T ' ~ •· : ' ' . ~ ' f • • _ ,

A vollll£e senes tl>cdback hQS 11, I hgh o npttllmpcdan~-e b Low mput 1mpedance c. ~hgb output tmpedance d. llitth vohattc guln

ti ll

- ·

llte current to the mciL'r (M) 111lltc op-nmp circuit shn\\10 is a, lmA b IOOpA c. 2mA d 200 pA

CD 0 1

I 0

CD CD CD 0 I 0 I 1 I

l 0 0 0 0 0

tn th~ Kamausfl map shown above. the mmimnl mupu1 X 1~

45

a. X= AOC:V+ }B-.ABC

b X = BCI AJH ACD c. X = BCD 1 JLD .... ·I/JC 'AlJCD d :\ ; JJ( t -1(,

~PROM mentor) contcnl ron be ~rnsed by exposmg •Lto a. UV light b lnlcJISC hl:llt rudoutoon (!, IR rays d Mtcrowuvcs.

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46

48

50

The flllmber of memory cl11ps of s!Zt'. I K •4-blls required to build a mernoJ)' bllnk M Size 16K • 8-bits is a. 64 b. 32 (), 16 d 8

V nl ~t,JCiA.k ll,f; V<J itDG~

For the recufier circuit shown, ~lo 1'1 V of tbe dfode 1s a. v ... b J2y • c. 1'. / ;t d 2V,. Match L1SL I (Name of \lleruory) witb LtSL II (Features/ Charact.wslic-s) and solt'-'llh~ CQrrect answer List I A SRAM B ROM C PLA U DRAM List II I 'flus comains co1wet1nooal srorsge llke

la!ches (BJT or MOSFI:T) and i1 JS

non-volatile :! Thts conta111s convenbonal storage l1ke

latches (BJT or MOSfETl a!ld has boUl ~ead and Wme operatJon

3 TI11s conlams a set of AND. OR or INVERT logiC gales a:nd can be programmed

~ nus conta111s ooly tviOSFETs lU1d Meds periodic refreshms

A B (' D 11. ;; <I 2 I b. 2 1 3 4 o. 3 I :! 4 d 2 4 J I The binUl')l number 00000 I 0 II wheu r<prcsenlcd utl3CO foo:nat, JS g1ven by a 0001)1 011 b. 10111011 o. 000 I 00()() I d ltlOOJ 000 ConsJder tbe foJJowmg smtements:

bnf 1l A t·blt magnrtt1de comparator for inputs A=A1AzAu and O=B,BzBrBv has three uutputs A>B. A=B and B>A.

2 Two l·blt comparators an be casGaded to create an 8-bil comparator

3. l'bc basic budding btoel.. of a C0111parator IS the4 comcaderwe (exclusrve·NOR) gate

Which of Ulll$t statements iS/lire correct? a. I ,2 and :l b I and 2: c. Only I d Only J

5 1 TI1e nuto-cniTlllatton functlon of the wh11·e Gaussian ooise 1s a A constant b A step functioo c. An m1pulsc func11on d An expommuat flU>cuou

52 Wh1ah one of 1he foiiQwu>g pulses ha< the same fonn m ume domai11 a< well liS 111 [requency domaill~ a. Rectanguhtr pulse b Exp<111ential pulse c. friungular pulse d Gaussian pul5e

53 GooJ voieL• rcproduotlon via I'CM rcqull'OS DS I(Wll1tizatlon lovcfS If rhe band1vidth of voice chunnel1s 4 I<Hr, the data mle 15 a ~56 llbps b 128 kbps e. 56kbps 11 28 kbps

54 lu a transforme.- tJ,<' Jiequency or the <ul}ul voltage 1s dwbled. Hy~1erotic loss nl th" h•~her frequency m tenn~ of that at the lower frequency IS

a. Doubled b Halved c. F'oar times d One-fourth

55 Two senuconductor marenals A and B havq c~mer concentr<11lort vtllues DA=I' I021m"1 and nn=4•HY'm··' Hall coel'ficients or lhe waterinl, R.. allll Rn are m the r~tlO a. I 2 h 1·1 c. I 4 d -l l

56. Constder the tbllowm.s 01.nterials I Puro slhcon 2 A h.Lminum 3 Doped sUlcon

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57.

59.

GO.

61-

~ . .r.fo.a l'he CQIT<1Cl •equern:e in the PrOer or their increasin& elcctriMI re..istil d y i~ u. 1,2.3A b 2,J,4, I .:. 2 .. :;, I .4 u. 1.3..1,2 111on> urco four eontribul')t'S 111 tow! pobdzation uf • ""'tari.1L ·o, .. a conlrit)lttions an> .:leetrQnie, tonic, dlpolor •n~ l!]l3tc..:lwrtle pol•r®tion At •lrtical frcqueode> tlte onlY major eontcibuJivtt tu polnrizntlon is from • · Blectnmic p<JinriutioJl b. lottie pol:triz.1tion c:. Dipobr pobrizntion ct. Space-ch•rgc polnriwtion Par elect{on~ •nd hole•. the Hall coefficients ~re a. Doth positive b. Duth ncgnHvc " Pnsltive•nd negniive. respectively lL Negative and posith-e. reopeetively n\re<: 3in~le-pha>c transfiJrJOCI11, C/ll!h of 100 kVi\ r.11ing .trc etlnnccted in delta. If tme llf' lhc tronofonnlll'll i~ !liken ot•t ,,J' s<:rvice, the: CDJ)~~tty <if I he syst.:m \\' ill he '" 200 kVA b. 1732kV.\ c , IIS.HVA d_ 36.() ~VA Threo unil!l oJ I _ 5 11'3.11!lform•1'S arc conncctod m 4 Y to supply • 3-vlw>o load !Tom • ~00 V. 3- phase source. 'J'he line voltage on tbe load s ide. LS

n. IOO(IV h. 80V c. 346·1 v (1. 803 \f A 15 MVt\, 33, 11 kV. J·phll.•¢ l.rrlnliforme,· having un imp.:dunce of Hi Q on t.he lrigJ, tenSIOn side~~ ' upplied from ~ S<~l\ettllur r.tt.:d ~Q vi\' A. I I liV. ThQ I,J.U. itlllll>dan~c· or ~le lrousfonnc!r calculotcd "" ill! '"~" bn.c ••ttl on th~ s~ncr.lur buse will !><: in the ratio :r~ l : I b, 1 :3 c.. I : I) d. I ; IS Sle.1dy stole operating candit•on or 11 power sy•h.~n iodicotos n. A s itu!tti.uu ''1bcu che counectc.d load iM

;~bsolutcly con•tnnt

63.

G4.

65.

7 ul I) J>, ,\ "itl•~tion when the generated P"Wer

i~ at>.<olutely constant c. A situatilln when botlt conue.:ted load

oud geuc1 •led po1vcr ""' cquol 10 cudt other and remain co.~l4nt

d Ali equilibrium stole :rround which .. no ll l luctuutions in power. both in gmcralion and load. ocror all th~ tUne

Match List 1 (!""ul111inn Type) with I .i~t II (Purpose or ronf\gurnl i<>n) ~nd •~lectthe c.or...:CillOSI\tf:

List ! A. Pin typ" B. SU.'jpeniion type C- Strujn typ" D. SlmQk!U type u .. rr I. 1, <.1\\ voH~ge cli•trihut.ion lint:S 2. String of insulator In horizontal

position 3. Siring of inrulnlors in ~'Crtico l position 4. I' (If VIJ itnge up to 33 1;V

A B C u. .. 2 3 b. 1 3 2 ~. 4 3 2 d. I 2 ~

.1)

1 4 I ..

1\l.ltdt Lbt I with List corret:t answer:

nand

1.l$t l (llus Typt:'$) A, Load bus B. Genera lor bus C. Slnck bu.i List 11 (Pnirs of nrlablcs) l. l' .nd v 2. J> nnd Q 3. V nJt<l S

A B C • I 2 :l b. 2 3 I "· 1 ::t 2 d. .., 1 3 M3lah J,,st with t..ki II and ,elect th e corrocl answc:r-: List I (Relavs) A. Buclthol;_ ~ay B. Tmn •131' relay C. C:micr cum;nf ph:t.S<> Cilmparison rt!la) D. Directiounl ovtr curr.:nl roby L ist II (Pr•llcction) I Feeder 2. 'l'ntMform~r 3. Ring main distt.ibutor 4. Long over)tead b aru,mi~titOn line

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<\ B C. D n 2 ~ 4 I b 4 I 2 ~ ~ 2 1 4 3 d 4 3 2 I

b6. rhe resolution of " .'!",, di!lil voltmeter on

I V ""'It" is ... (l.J

b, 0.01 c:. U.IIO l d, MOO !

<H. Vaou11m cleaotll'll arc n. Permmonl mng11et f.h.p. molor.s h. Single.-phnoe cnpacit.or molar with

dio-e<:L-on-line start r;.. Ro}ucllltoct ntOlOI d. uniwrs:olmotor

6M ,\.,criion (A): A dipol~ of length 30 mm oww·ated at n lreqnency of H)O Mllz i~ an cliic:.leul muiutur. R('ll$011 {R)t 1\ Hertz Tan dipole i> an inefficu:~nt r:~diator since il-r radiation ~I$Wll~c i~ VCI)' 1(11> . u. Ut>tb A uud R ate iudividually lnu: nnd

R is Ute I!IJn"l!l esplonutiun of-\ b, Both A and Rare individual!)· inte hul

R JS not th" ~rrecl e.xplanations of A "- A i!; true hut R b f3l$e cl. A is fnlsc bm R is true

69 s.<..-tlon (1.\ ): A circu lnrly pobw.od wave Incident al the Brewster -angle becoml:ll linc:arly polarized. Rco.son IR): A W4\1l composed of both pnrnllel .1nd perpendicular component• iuctdent nt Bt·owsteo angle produces a re:Oeclod wove with ouly £ coutpuneut polarized parnlld to lh.:luterf~ce 11. 13oth A and R are individually true rmd

R ., Ute Correct 1:\lJIInJtli<ln ut' A b. Both A oncl Rare iudivit!uAIIy trw but

R is not lite c<lrrecl e.xplnnnll~"" ~[A c, A is tnte IM R i• fal1e d. A is l'•l~e hut R it inl~

70. iUst>ttlou (.A): A dipper citcult c:u1 be re>liz~d U>iug two biasod diodWiin slu!lll l{cawn (R): A clipper circuit slices th;: luput wawform betwe..'ll two pre,~et voltogo l..v~ls. 11, Botl1 ,\ and R ru·c individually truu rond

.R i.< th" C()rrt:CI e'(piAnailon ui· A b Both A and Rare indtvtdually true but

R is not lh<> comocl '-"<pLllutions of A c:. A is true bul R os fnl!e ct. A is I'~L\e but R is true

8 of ll 71. ~rlion (A)t Three n~h: lo&oic i~ used

when 11 e. w~nt to conn~t mure th(m one inpullnutput aeviee.<~ to the llltmc tl«lil bus in J digital ~ystcm hu~.

Roasn11 (ft): Throe .. ..,ge logic hoR • high Impedance. •tnte which helps in isolotirti lh~> inpul output d.wice frotn tb" dota bu>. n. Doth A •nd R nl'c individu>Uy trno nod

R is the c-orre<t "-"planation of A h. Both A ~nd R nrc ontlivi<luolly I rue ~ul

R is nnPhc "'-'tlttlt:,~plitoatiOIIS vr A c. A i> inle but R is" i:the d. i\ is rnlse bllt ltis true

n.. A~•ertirm (A)' When large omoun! nf cl•t• l~ lQ lle printed out from Lbe memory of • C()ntputer DJVlA is u•cd. l~cnson (R): DMA avoids us ing lhc CPU lhns allowing tha Cl' In al1end to nnother job. •· Botl1 A oud R 11!1! indjvtduollv lrue und

R is the correct e>:pbnntion of A b. Both A ami R Arc individllall~ true but

R iH oil !I the c<ul'c:cl e.~llllonntlo;ns uf A c. • \ ;. truu but R11 Jhlo!e d. A is false bot It i• trUe

7.;. \ssertltln (.:\): In _general. mo,ing irnn vullmut.:o; fil't: lcso aCCurate tllon UoONe uf the llynomometcr lyp•. I~"'"'"' (R): \lrwing lln I'Oiimctet~~ uflen u.;~: ~ir- lric;l irm clomp in g. a. BoUt A and R ore individu.U) IJ•ue anJ

R iJ. thll cotrc<!l ""'plonntion of A b. Both A ;and Rare in11lvi<luallv true h11t.

R ~' not the C:CitT<:et e,~pbnot i<;n~ ur A c, A is true l)ut R is false d. A iS fili" bul R is true

74. t\ssertion (A): Tlu: exciting cuorcmt or • single phase trnnsromter n•ith sinusoidal V<Jl13ge •UIIPIY ~~ tlf\11-sinusnidol Rcuson (ll); Eddy oUJTcnls induced in tb" ltnn>fonner core~"' non-sinusoidal introducing harmonics of higlter order in the- t;Kcilin~ cuttt:nL lL BoUt A :utd R ~~ e imlividuatly b'uc uod

R is 6tc comet e:lphmotion o.t A ~- BoUt A and R aro millviduall\ trut" hut

R i• o<)t the C.trrcc.t Cl(tl llmoti~o~ 111 A c, A is lru~ butR isillse d. A is false bul R is true

75. .sen lon (A): A scU:.:onlrolled synchnlnuus m11lflr fed li-om ~ l(lnd commot.cd CSI is lice lrorn hunting nntl slllbility pn1blem~·,

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Rcuwn (R}; Tile motor has J=per "indln&•· n. Bolli A ·nud R nre uodividually ltue and

R is U1t: Clll'rcc! •.~pl•oation llf A I> Both A and R llfC individWJJiy true but

K i• noothe correct explanation.• of A ~. A is true but R i5 t1tl~c 1L A is fal• c hut R is true

76. Assertion (A): LigbJJy doped drain (LlJO) 1\ I(JS ~ F.'I 's are less prone to hoi ~lectron dfe<~ts. Rcl.-ou (R): Tbu ruuximum cl,-ctric field in the ~hannel i_, ~~~ in lightly d<lJJ'--d drain dcVic<:l'. '" Both ,\ and R •r~ indwidua lly t1ue and

R .IS Ute cort'tl<!l eJ;pbnntioo of A h. Both A and R arc individu:tlty lru" but

R ts not the correct explana1ions of' A c. .'\ is true but R is fal~c <L J\.i~ !a]$o but R is true

77. .\ss~rlion (A): for " svmmelricnl mngnetic llald di.'itribution unde"r each pole nnd f'C!r C<jUIII llUUibct tof 30\latul'i: oouducto111 per parallel polh,. the omf availobl• between adjacent hrushes of 11

lap-wound d.u.. machine is e<1unl for e.1ch ofth~ parallel paUl.>. Rcwmn (R): The iltstantnncou. <ml' induced in each cQnduct(lr of coch p•mllcl r#~l is e<jWII fi;tr ;oil ihc OC)nduCI011!o ;o, Both A anJ R Me individua lly true and

R is U1o correct <>Xj>larultion of A b. Both A ond Rare indiVidually true but

It is not the correct explanations of A "' A is true but R t$ J'~l$c d, A is fill~c b ut R i• ltue

71!. A-.crrion V\J: In ~ lo>rl now • tudy. the rated frequency ot' the power system does not appear iu tl1c power lli)\V c:~uotlous. R<•os oJJ (R}: Rated frequency of tlte system is 4Utomatic~ll) ~s•ured when A~.tive po"er billan.:.: ;, oMAinoo throujjh II>Ull tliJW ~tutlic:!\.

n. IJOlh A nnd R ar~ individuolly tnt~ nud R i• the com:~l e~plnnalion of A

h, l:loth A and Rare individu3lly true l>Ut R .is notlhe corn:cl.:t-tpbtutuons of A

I!. A is It ue but R is fnl•c tl, 1\ is fo t.c but R ($ irue

7!1 ~sertlnn (A): High pt'IIS8l!re ol\idnlion todi!Uque .....tucell .:rystallin~ tl<lf<:<:t. nnd o.Jl'ocl!. the pr•vious diffusion ptofil"" to n 1TCJY little extent.

S(),

81.

S2.

83.

84.

I} <If I R~ason (R): The high pres•ure oxidMion processing L' • ~JntiV<liS '4<il'tr lcmptnlUIO phcnrnnon~n.

u. BoU1 A nnd R 111e iudividu>lly truo und R i• the"""""' ""1'lan.1tion of A

b, ~oll• A :md It ~re lndfviduaU) true but R is 1101 Ute correct ll:qllrutnticm~ of A

~. A is h·uc but R i:> false d. . \ i• mise but R i5 true A•s~rtion (,A); A IJ.tlf-controlled converter ha. lotprov<'ll power fnewr on the llnc sidd. Rc,.son (R): P uritJg l'ree-wl,eding nr tloc cQnvertor. n 1'"11 of the energy ''"red in lbe induclllnce Is utillt td ru; aclive PO"Cf liJ the load. '" Both /\ and R 1\fe mdivtrlua lly true and

R L. ~~· CO!'I'«t eltplanmion or A b. Bo~• A •nd R nrc ludlvidualh· tl'ue but

R Ill uot the eo•Teot <c'<pllinnti.;n• of A c. • \ i.• true but R ill fnl•e d. , \ i~ f.1l!;e hut R is lnle A bin:uy snul'l:.e g<:~t01'ALC8 two m~ages 11 ith probobilitiC'l Po nnd P, ( P, - I f. ) 11Je cntJ'tlPY of U1 ~ SOU I'll<>

Is u. I -biV•~~nbol Hre:>pe<!tlvc of the I'Jluc

oFPt b. Ma>.;nmm when Po= 0 ..:. Mu.~u01 wh.:n P1 ~ P~

d. MiJlinllltll wb•111'o; Po A RF s ignnl i$ ~mplitudc modul4ted to n depth of I U(\"~ by~ s musoiil'l algnnl. The l:lltit) of modUI(I[cd signal pvWor to Uhpopulo!c(l carrier po>vcr is • . 1 b. 2 <:.2/3 d. 3/2 The antcnu current of :m ,'u\1 broode:tst transmitter modlllot<:d 10 • deprh ,yf 100•.

by on ouclio ~ine wave i~ ../312 A which

inorca~es tu ../2 A tluo Ill s imuilant(l<t• modulatiQn by ~not.her tlt,ld io sine wave. 'l11e moduL1t lon tnrlex due to the- ~.:cQnd sine. wavo is :.. n.s h. 0.707

"· l.t) d. Q.866 1l1c ftc,~u.cncy deviotioll produced ill ~ VHF ""rrier by a 1ignol of 100 Hz i• SO k H~. 'lno frec1ocrn:y modul•ti11n in de,< ,,,

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88,

,, 100 rndrano b 250 radians c_ SilO rarlians J. 750 rnili<uu 11re prohnhility donsit.) funcilon of the en~e11rpe of n sinusoidal sighlll olfmg wflh n•ITI}" bQnd noise follows the lilllowing dii<tr ~>lllilln :t.- Gomsi:.tn b. Rnyk:Jah C.. Rkian d. Poisson ru .. •ppnlxjma la hoighl of. g.eostotionruy ••tell.ite above the Earth 's S\rrface iY n. 1000 km b. J OOOll km c. 21lo00 km a. 400UO ~111 l'he 1.nstrumt:nl landins ,,ystcnn (JL,'i) und the. ~!O<urd c'Ontroll~d 11pprmdr (GC;\) <ystcm of landins, u.qc a. Glide patlr localizer and twn radm;.

tt specllvely b. MaRta- and 5la1'o stntion>ll>t' bollJ c Glide pillh IOculi7,cr li>r IMrlh [f (327)o = (.'0_,. than the y:r.lue of X i• given by '" 327 b. 2(>8 Q, 2033 d 3302 'rhe decimal nu·mbef 4097 ,. rllpresented irr four lhrnc~ as shuwn below. Mah!h Li•t I (Type or Repn;)SClllittion) with Li~t 0 1 Numller) and •tlt:Cith~ corr<::et ~n•wer: List I A. Birury B Rl~D

I~ Oct.1l D. Hc.ud<cimul Li.•t TT I. t)tlOOOOO()(ltlO() I 0\ll L 004)0 000() 0001 t)()U I :i. 000 I 0000 0000 000 l ~ - OI00\10\)(liQOLOII I

1\ B C D a. ~ 1 l 4" b. 2 4 3 1 c. 3 -1- 2 I. d. 2 1 3 4 c~onsidw:-tbe folio" ing obtement•• ll'luitiplication in li cumplrl"'" o~n be pedimued h) usiufi L A horilwarc ntu1t·ipli01•

92.

93.

94.

95.

1)7.

l tJnll l 2. Succc•.Jiw addition iP lllladder 3. Shit\ and ndd technique Which of lbe!;e slat¢111<:-nl~ ~'"' COI'I'C(:I?

A. 1.20I1d 3 b. I and 2 "· 2 and 3 d. land 3 WbicJ• one l)r tilt: following logic fumilil:!l ~ tho: fn.~IClll? a. I ~L b. UCL c. TfL d. CMOS The proc<> .. of orgonizine tho memory mlo lwo banks io allow !!-bit and 16-bit dala operating h coiled •· B•.nk swilduug b. Index-ed mapp1ng c. 2·way rnemory inlerle.;aving d. Mo:mory $egmcnllltion If on)' 'blool. of a main memot)' ~ould te~lde m any b loci;- of 3 cttchc. the­mopping tc:chnlqu.: used i~ a. Direct mapping. b. A•soc.iative mllpping c. SIH~'ooilltive m<lpplng d. l.inear mrrpping, DAA is otr .instruction m the iuslfuctlou set of many ntieroprocc:ssor.s. This juslruclioo llli psed in a tnicmprQo.es."or lo pertb n11 a. Binary addition II. DCD nddition c. ASCII addition d. Binory subtra~tlon 11 1s desired tu reserve a word (two consecutive bytes) in the mc:mOr~ and initinlizo it lu lbc \Oiuo 1945. Titcu 1\ c> u!;c. the nx~em~)c:r directiv<: a. S : OS 19-I.S b. l' . DH 1 94~

"· Q. DW 19-15 d. t; ; EQU 1945 Whkh of the folloWIIIl! I ll mel~ods does not usc tlr" CPU Joe (ll'tfunning l 'U opcrntion'! "· Progrnm initi$led 1'0 b, l)evioe initialed 110 c. Oiled memory access d. Serial I/O 1\fnloh LL~l I witl1 Li•L 11 nnd select the correcr nn~wer:

List! (Bridge Circuit) A. A•y·~ brid&o B. Kelvin's clvuhle bridge

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c Schenng bridge D WheatsiOne bridge List II (Measurt.'tl Parameter) I I .ow resasmnce , Medium resistt~nce J High 0 lnducmnce 4 Capacitance

A R C' f)

11- 4 I 3 " b. j 2 4 I! 4 2 3 d 3 I " 2

SOOV

IC two J(XJ V fuii-SI.~e liOloneter v, nnd V, buvm~sensiuvitte.< of 100 k 0 1 V 1111d 150 llQ I V respectively urc connected in .enes 111 m~ru;ure 500 V. then u. v, and vl ll'tll ~d 250 v each b Y1 will read 200 V ond V1 will read

300V L Va wm r~.~t~d -'00 Y 11nd y, will r.:ud

200 v -d. V1 and v~·""" r~ad ()V ench

911 In ~'<ldy cum.mt d3mping ~)'!<inm~. the diM: ~mployt!d ~hould be or a Condu~nng and magnenc mntenal h Conductmg hut non-mngneHc mm~nal <=- M~gneLoc but non-collductiug muterool d. Non-cooducllng and non-m~gnetJC

mutenal 100 1\n onsirumeni lhm measures the msulnnnn

rc;>tStllnce of systems using U >elt:provoded I 000 V de gcn~rmor ts culled o. VTVM I> Meggnr ~ Thcnnocoupl~ mstruonct\t ll Mt~tJ Mnk

I 0 I Which one ttf 1Iw rollowlng ' 'llllables eunnot be measured dorectly by n C~O?

102

lL Current b Voltage c. Phase diffen:nce ll Prequ~ncy

103

II of Ll

The. wavcfQnn g" •en ·above is observed on tlu: scr<cn ofn CRO. Tf th~ timeldov S\>ltch I> set at 10 I!S and the voll!Ji• ut 100 mV ih~ freque~v and peak t~ peak \'Oitug; aro Respecuvely II. 33 JJ kl lz. 800 mV b 15 lHt~ CilO mV c. 3333kHz. 600 m V d 25 lH7. 400 mV

It, ll,

-- 1-"·1 M ~ u tfl) .. ~l.lltlot ~·-l I ! I "· ...... ·

Toe corcUJt ~hown ~t>owe i~ lhnt of a MultiMijtC 111Ct\5Utilll! a c mhugc Coru;ldcr tloc l'ollu\vlng_ ~1alt.tut:nt>.

L DIOde 1)1 conduct!$ dun~ ih~ positive hnlf cycle

' 1 he shunt n;siSlllncc •~ used !;<) llmt diode Do wnJ~cts heavily and mov~s the opemung po111t m the linear ponion of V I ct"mactcnstoc of d1ode Do.

J Diode 0 2 conducts dunng ncgath c hnJ! cycl~ ·and currem byp:JSses Ute meter

Whoch of the;e staJement~ are correct? n. I w1dl b. 2and3 ~:. I and .3 d l;!nnd3

tO~ In o low powi.:I facto• wnttuaeter, sometimes comp~ns:umg cotl o.s employed Ul order lo a. Neulrnli>'.e the ccpacili•c .,nect or

p rt>Ssu re en it b. Compensat~ for tJ1e Li.tductnncoc- of

pressure coil c. Compensate lor 1he l!rwr caused by

pawet los;; ln lite pressure ~oal

d. Rcduc.: the error cnh:>cd by t!ddy currenl damp1ng

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IUS. If o. '-17 tD 53 liz r~ type frequency mL•t~r fs provided with llO i arlzm~ »inulng exCited by de:.., the new range of frequency me1er ,-;

11 '14 to IU6 H7

h J3 5 t(! 26 5 "' 1.". 47 In~ lu J .WtoSQ ilt

106 Field 1\indlng of a 4-pok SCj)llr-Jtely

~liCitL'\1 de. Maclune (5 cxdi<d from a 50 Hz supply. Armatrtre rs totaled at 1500 rpm Md me brush-r<><:ker IS also romted tn the satne d!Iectton at the !!3me speed. Vohogc a eros.~ th~ brushes 1s a. IOOHzo.c b 50liU.t e. 50 l-iZ. tto. 1.\'ltb u d.t>. component d. Zero

107 Whtcb of the follvwmg lnfomtation IS obtamed by Potier's method uStng open ctrcun char3Ctensttc and ~:ero power iitctors charocteristie• n Field currept cqui\nlcnr uf llrmattllc

r=unn b. Sync.-hronou> reactunoe c. Leal.ag< re~~ctancc d. l ,eo~a,ge reactance and field current

~tJWV'ulent ofannature rem:uon IUS Match LISt l "1th l.tst 11 nnd .select the

cmrect answer List I (Test) 1\ Slip ICSl ll Open ttrcu11 nnd zehl power rucwr tc>t C.. Sumpner's lest D. Swinburne's test Uo1 1l I l)etemnnation of COI11it!Jill losses of n

d.~. ~hunl machin~ , Oetcm1l11U1fon or effict~llG) 111111

r~gulnuon of Lm nJ<fol'l'l1<'r ) _ Determ1mrtlon of >J11Chrooous l'oltcu:

reocuu1ce of' synchronous mach me -1. Detemunation of direct nnd qundrnte­

a~IS .synchronous reactnnce s of sahen l pole synchronous machine

A B C P a 2 l 3 ~ b. 4 3 I J c. ~ 3 I -1 ' ~ 4 I J 2

109 Consider th~ litllowtn& statements In nespect ur comJll)nlkltfng wmdinJl!. m d.c_ mof\'rsi

110

I ll

112

113

11 of IJ J ~ C01npcnsaUng wmdmJfS an: t\Onnectcd

In scncs "llh the nnnnaurc ~ Compensating wmdings aid

commutmion 3 Cfllnpcnsating windings produce mmf

in the ~e direction as tlult or ormututc tnm~

Wluch of tl~ stmcnKIIIIS !slate correct? ll. 1 ttnd 3 b Only I c 1311d3 d. I and 2 Under vnnablc frequency opemuon of 3-pbasc rnduclion mntQr, air gap flux ts kepi consL~tt l b) odjusung tb~ moiDt I'Oitagc ror constwll Qt.f gap ilu.~. mucluno d~v~lops tit~ swnc torque 1\b~n the a. Slip is kepi constanl b Sl1p speed LS kept cQnstam c. Power now across ahe aar gap ts ~'eJll

constam d Power mpttl l(l 1~ stntnr is kcfll

coll:jtunl

c 1 t ""c '--'-'---'

Ftgur~ shu".' abe pb:t~~ \\tndlttg CQnnertlons of a ban~ of thr~e sm~l"' phase trnnsfonner.;_ For uml} lum 11ilfu and balanced three-phase suppi) voltage V (line-1()-lme). volta11e betw""n the lenmnuls U! und c: on the secondal) s1de 1\0ibo u. Jiv b JV c.. v d 2V Tlie full-load copper loss of a tmnsfonner Is twtco Its core loss. At whm percent of t11e full-load wtll the cOlciency b.! JnUXIInum? 3. 25% b ;oo,u c 10 n. d 14t~. Cnnvcnlioll!ll pmwr li'~<ju~ncy eqrtivnlcnt C>rcutt nl' n tWIH~nl led tmnsfnnncr i~ oblllliJed OU tbc llS!.UUlp~UII tJf

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tL Equ.."ll pl'"u-u.u.ry anJ ScOOodAry o:U:tlpCI'e I;UJ'1lS

b . Negll_gibJo mutunJ rctu:lnnc.c \! Untfu nn vulrdgc drop !lh>ng. 1hc.

\Vind.m~ d Presence 01 lc:1kagc cUITcnl bt.-twccn

IJh: \Villdff!S.'i I J•l A ~cp~rntcly exc1tcd d \! m(')tm tnkcs u

cnrrcnl I a l a -.peed N I I 1t dnrw~ .p current 113 :n u t;pL.-ed 3'N. lhcn Lhis <:tmdit.ion IS o blnwccl with 11 Ficfd Cf'ntro l undO( cnn~tanl 10rquc b Volruge control onder ooru tam. torqve ..-:. Fl~.hJ coutrol uud1.1r t;:A.-twllUUl l .''lli4JUI. d Voltage cuntrol uud,:r ..:onstaut u\ltput

II ~ Cnn.~tdct tbe f\::. llpw•tt.4 Slillemenrs: .Specific fdl lun .. ~ ora.n··ur~: l V(.."tY ~nudJ Oll .. stotc reslswocc 2 Prcscn~c " ' scct)nd brca.kd~')WH 3 lo(iu ih1 wpul resistance -L Good pertbt'Ju (tflt:e i•l pam_ll~l

Opl,r.:itU.II l

WbJ'"b or llll..:~e SliH II:.IUC.u \5 ;:,ro curr\!i!l? a.. I .2. 3 .uud 4 h . t..=- a od 3 \.":' Jnnd 4 J. lll11d2

I I 6 Ma1ch Lisl. l vo~lth Lis~ II nu.l .... ct~• 1lt~

CQff~C-t tJWI\.VCJ'

L1~• .I (l'oWer'" Otvltt•) A . 'rhyri~ttu-r 0 MOSF11 1 C IC11'1 1 I) BJI' .L I.sl Ll (Prop~rt'), .

I Second h~t-;do""'" ~ Lu't;.l.! \Jti-.Sltl,gc UtuJ) 3 S mulJ Qn-.stui.c dn>p 1 S tow devaC1:l

A 13 C Q 4 3 2 b . 1 -:! 3 c 4 ~ 3 J l 3 ~

p I 4 I

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