electrical characteristics (case … ka-band point to point radio communication. sumitomo’s...

Ka-Band Power Amplifier MMIC

SMM5846V1D

Edition 1.1

Mar. 2016 1

FEATURES

・High Output Power: Pout=31.5dBm (typ.)

・Linear Gain: GL=20.0dB (typ.)

・Frequency Band: 27.5 to 29.5GHz

・Impedance Matched Zin/Zout=50ohm

・Small Hermetic Metal-Ceramic SMT Package(V1D)

DESCRIPTION

The SMM5846V1D is a MMIC amplifier that contains a four-stages

amplifier, internally matched, for standard communications band in

the 27.5 to 29.5GHz frequency range. This product is well suited

for Ka-band point to point radio communication.

SUMITOMO’s stringent Quality Assurance Program assures the

highest reliability and consistent performance.

ABSOLUTE MAXIMUM RATING

Item Symbol Rating Unit

DC Positive Supply Voltage VDD 10 V

DC Negative Supply Voltage VGG -3 V

Input Power Pin +22 dBm

Storage Temperature Tstg -55 to +125 deg.C

RECOMMENDED OPERATING CONDITIONS

Item Symbol Recommend Unit

DC Positive Supply Voltage VDD up to 6 V

Input Power Pin up to +16 dBm

Operating Case Temperature TC -40 to +85 deg.C

ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)

Item Symbol Test Conditions Limits Unit

Min. Typ. Max.

RF Frequency Range f VDD=+6V 27.5 - 29.5 GHz

Gate Bias Voltage VGG IDD=1100mA typ. -0.50 - -0.04 V

Output Power at 13dBm Input POUT VGG-constant 29.5 31.5 - dBm

Output Power at 1dB G.C.P. P1dB ZS=ZL=50ohm - 31 - dBm

Power Gain at 1dB G.C.P. G1dB 16 19 - dB

Power-added Efficiency at 1dB G.C.P. PAE - 15 - %

Third Order Intermodulation* IM3 *:Df=10MHz , 38 42 - dBc

Output Third Order Intercept Point* OIP3 2-Tone Test, - 39 - dBm

Drain Current at 1dB G.C.P. IDDRF Pout=18dBm S.C.L. - 1450 1850 mA

Input Return Loss (at Pin=-20dBm) RLIN - -10 - dB

Output Return Loss (at Pin=-20dBm) RLOUT - -10 - dB

G.C.P.:Gain Compression Point S.C.L.:Single Carrier Level

ESD Class 0 up to 250V

Note: Based on JEDEC JESD22-A114-C (C=100pF, R=1.5kohm)

CASE STYLE V1D

RoHS Compliance Yes

Ordering Information

Part Number Order Unit Packing

SMM5846V1D No Limitation 48 pcs. / Tray X 4 Trays = 192 pcs. / Packing

SMM5846V1DT 500pcs. 500 pcs. / Reel X 1 Reel = 500 pcs. / Packing


SMM5846V1D

Edition 1.1

Mar. 2016 2

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

16 18 20 22 24 26 28 30

2-tone Total Output Power (dBm)

Inte

rmo

du

rati

on

Dis

tort

ion

(d

Bc)

27.5GHz 28.5GHz 29.5GHz

14

16

18

20

22

24

26

28

30

32

34

36

26 27 28 29 30 31

Frequency (GHz)

Ou

tpu

t P

ow

er

(dB

m)

Pin=-4dBm 0dBm 4dBm

8dBm 12dBm P1dB

Output Power vs. Frequency

@VDD=6V, IDD(DC)=1100mA

16

18

20

22

24

26

28

30

32

34

36

-4 -2 0 2 4 6 8 10 12 14 16

Input Power (dBm)

Ou

tpu

t P

ow

er

(dB

m)

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

Dra

in C

urr

en

t (m

A)

27.5GHz 28.5GHz 29.5GHz

Output Power, Drain Current vs. Input Power


IMD Performance vs. Output Power


IM5

IM3

-60

-55

-50

-45

-40

-35

-30

-25

-20

26 27 28 29 30 31

Frequency (GHz)

IM3 (

dB

c)

18dBm/tone 20dBm/tone 22dBm/tone

IM3 Performance vs. Frequency



SMM5846V1D

Edition 1.1

Mar. 2016 3

16

18

20

22

24

26

28

30

32

34

36

-4 -2 0 2 4 6 8 10 12 14 16

Input Power (dBm)

Ou

tpu

t P

ow

er

(dB

m)

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

Dra

in C

urr

en

t (m

A)

VDD=4V 5V 6V

16

18

20

22

24

26

28

30

32

34

36

-4 -2 0 2 4 6 8 10 12 14 16

Input Power (dBm)

Ou

tpu

t P

ow

er

(dB

m)

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

Dra

in C

urr

en

t (m

A)

VDD=4V 5V 6V

16

18

20

22

24

26

28

30

32

34

36

-4 -2 0 2 4 6 8 10 12 14 16

Input Power (dBm)

Ou

tpu

t P

ow

er

(dB

m)

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

Dra

in C

urr

en

t (m

A)

VDD=4V 5V 6V


by Drain Voltage

@IDD(DC)=1100mA, Freq=29.5GHz


by Drain Voltage



by Drain Voltage


14

16

18

20

22

24

26

28

30

32

34

36

26 27 28 29 30 31

Frequency (GHz)

P1d

B (

dB

m),

G1d

B (

dB

)

VDD=4V 5V 6V

P1dB, G1dB vs. Frequency

by Drain Voltage

@IDD(DC)=1100mA

P1dB

G1dB


SMM5846V1D

Edition 1.1

Mar. 2016 4

14

16

18

20

22

24

26

28

30

32

34

36

26 27 28 29 30 31

Frequency (GHz)

P1d

B (

dB

m),

G1d

B (

dB

)

IDD(DC)=950mA 1100mA 1250mA

16

18

20

22

24

26

28

30

32

34

36

-4 -2 0 2 4 6 8 10 12 14 16

Input Power (dBm)

Ou

tpu

t P

ow

er

(dB

m)

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

Dra

in C

urr

en

t (m

A)


16

18

20

22

24

26

28

30

32

34

36

-4 -2 0 2 4 6 8 10 12 14 16

Input Power (dBm)

Ou

tpu

t P

ow

er

(dB

m)

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

Dra

in C

urr

en

t (m

A)


16

18

20

22

24

26

28

30

32

34

36

-4 -2 0 2 4 6 8 10 12 14 16

Input Power (dBm)

Ou

tpu

t P

ow

er

(dB

m)

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

Dra

in C

urr

en

t (m

A)



by Drain Current



by Drain Current



by Drain Current



by Drain Current

@VDD=6V

P1dB

G1dB


SMM5846V1D

Edition 1.1

Mar. 2016 5

14

16

18

20

22

24

26

28

30

32

34

36

26 27 28 29 30 31

Frequency (GHz)

P1d

B (

dB

m),

G1d

B (

dB

)

Tc=-40deg.C +25deg.C +85deg.C

16

18

20

22

24

26

28

30

32

34

36

-4 -2 0 2 4 6 8 10 12 14 16

Input Power (dBm)

Ou

tpu

t P

ow

er

(dB

m)

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

Dra

in C

urr

en

t (m

A)


16

18

20

22

24

26

28

30

32

34

36

-4 -2 0 2 4 6 8 10 12 14 16

Input Power (dBm)

Ou

tpu

t P

ow

er

(dB

m)

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

Dra

in C

urr

en

t (m

A)


16

18

20

22

24

26

28

30

32

34

36

-4 -2 0 2 4 6 8 10 12 14 16

Input Power (dBm)

Ou

tpu

t P

ow

er

(dB

m)

800

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

Dra

in C

urr

en

t (m

A)



by Case Temperature

@VDD=6V, IDD=1100mA(@Tc=+25deg.C), Freq=29.5GHz


by Case Temperature



by Case Temperature



by Case Temperature

@VDD=6V, IDD=1100mA(@Tc=+25deg.C)

P1dB

G1dB


SMM5846V1D

Edition 1.1

Mar. 2016 6

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

26 27 28 29 30 31

Frequency (GHz)

Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)

4V 5V 6V

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

16 18 20 22 24 26 28 30


Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)

4V 5V 6V

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

16 18 20 22 24 26 28 30


Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)

4V 5V 6V

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

16 18 20 22 24 26 28 30


Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)

4V 5V 6V

Inter-modulation Distortion vs. Output Power

by Drain Voltage



by Drain Voltage



by Drain Voltage


IM5

IM5

IM3

IM5

Inter-modulation Distortion vs. Frequency

by Drain Voltage

@IDD(DC)=1100mA, Pout=18dBm/tone

IM3

IM3

IM3

IM5


SMM5846V1D

Edition 1.1

Mar. 2016 7

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

26 27 28 29 30 31

Frequency (GHz)

Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)

950mA 1100mA 1250mA

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

16 18 20 22 24 26 28 30


Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)

950mA 1100mA 1250mA

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

16 18 20 22 24 26 28 30


Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)

950mA 1100mA 1250mA

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

16 18 20 22 24 26 28 30


Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)

950mA 1100mA 1250mA


by Drain Current



by Drain Current



by Drain Current



by Drain Current

@VDD=6V, Pout=18dBm/tone

IM5 IM3

IM5

IM3

IM5

IM3

IM3

IM5


SMM5846V1D

Edition 1.1

Mar. 2016 8

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

26 27 28 29 30 31

Frequency (GHz)

Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)


-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

16 18 20 22 24 26 28 30


Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)


-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

16 18 20 22 24 26 28 30


Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)


-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

16 18 20 22 24 26 28 30


Inte

r-m

od

ula

tio

n D

isto

rtio

n (

dB

c)



by Case Temperature



by Case Temperature



by Case Temperature


IM5 IM3 IM5

IM3

IM5 IM3


by Case Temperature

@VDD=6V, IDD=1100mA(@Tc=+25deg.C), Pout=18dBm/tone

IM3

IM5


SMM5846V1D

Edition 1.1

Mar. 2016 9

-30

-20

-10

0

10

20

30

23 24 25 26 27 28 29 30 31 32 33

Frequency (GHz)

Sx

x (

dB

)

S11 S21 S22

-30

-20

-10

0

10

20

30

0 5 10 15 20 25 30 35 40

Frequency (GHz)

Sx

x (

dB

)

S11 S21 S22

S-PARAMETERS

@VDD=6V, IDD=1100mA

@VDD=6V, IDD=1100mA


SMM5846V1D

Edition 1.1

Mar. 2016 10

1E+1

1E+2

1E+3

1E+4

1E+5

1E+6

1E+7

1E+8

1E+9

1E+10

1E+11

1E+12

50 100 150 200 250

Tch (deg.C)

MT

TF

(h

rs.)

10

15

20

25

30

35

40

45

50

3 4 5 6 7

VDD (V)

DT

ch

(d

eg

.C)

DTch vs. Drain Voltage

(Reference)

IDD=1100mA

Note: DTch : Temperature Rise from Backside of the Package to Channel.

Ea=1.56eV

VDD(V)


SMM5846V1D

Edition 1.1

Mar. 2016 11

Package Outline and Pin Assignment

PIN Assignment

VGG : 1, 5

VDD : 7, 8, 9, 17, 18, 19

RF IN : 3

RF OUT : 13

GND : 2, 4, 6, 10, 12, 14, 16, 20

N.C. : 11, 15


SMM5846V1D

Edition 1.1

Mar. 2016 12

PCB Pads and Solder-resist Pattern

Unit : mm


SMM5846V1D

Edition 1.1

Mar. 2016 13

VDD2

Block Diagram

NOTE:

1. The capacitors are recommended on each bias supply lines, close to the package,

in order to prevent video oscillations which could damage the module.

2. Two pins named VGG are internally connected.

3. The same pins named VDD are also internally connected.

VDD3

VGG

RF IN RF OUT

VGG

Index

PIN Assignment

VGG : 1, 5

VDD : 7, 8, 9, 17, 18, 19

RF IN : 3

RF OUT : 13

GND : 2, 4, 6, 10, 12, 14, 16, 20

N.C. : 11, 15

Recommended Bias Network

9

SMM5846V1D 1

3

5

7

13

17 19

8

18

2

3

4

5 6 7 8 9 10

12

13

14

16 17 18 19 20 1

VDD1 VDD3

VDD1

VDD2

1uF

1uF

1uF

1uF

1uF

1uF 1uF

1uF


SMM5846V1D

Edition 1.1

Mar. 2016 14

4-inch Tray Packing (Part No. : SMM5846V1D)


SMM5846V1D

Edition 1.1

Mar. 2016 15

Tape and Reel Packing (Part No. : SMM5846V1DT)


SMM5846V1D

Edition 1.1

Mar. 2016 16

200

217

(5)

(2) 260 255

RT

(1) (3)

150

Time

(6)

(7)

Mounting Method of SMD(Surface Mount Devices) for Lead-free solder

Mounting Condition

(1) For soldering, Lead-free solder (Sn-3.0Ag-0.5Cu)*1 or equivalent shall be used.

(*1: The figure displays with weight %. A predominantly tin-rich alloy with 3.0% silver and 0.5%

copper.)

(2) A rosin type flux with a chlorine content of 0.2% or less shall be used. The rosin flux with low

halogen content is recommended.

(3) When soldering, use one of the following time / temperature methods for acceptable solder joints.

Make sure the devices have been properly prepared with flux prior soldering.

* Reflow soldering method (Infrared reflow / Heat circulation reflow / Hot plate reflow):

Limit solder to 3 reflow cycles because resin is used in the modules manufacturing process.

Excessive reflow cycles will effect the resin resulting in a potential failure or latent defect. The

recommended reflow temperature profile is shown below. The temperature of the reflow profile must

be measured at the device body surface.

Reflow temperature profile and condition:

(1) Preheating: 150 to 200 deg.C, 60 to 120 seconds (2) Ramp-up Rate: 3 deg.C /seconds max (3) Liquidous temperature and time: 217 deg.C, 60 to 150 seconds (4) Peak Temperature: 260 deg.C (5) Time Peak Temperature within 5 deg.C: under 30seconds (6) Ramp-down Rate: 6 deg.C /seconds max (7) Time RT to peak temperature: 8 minutes max

* Measurement point: Center of the package body surface

(4) The above-recommended conditions were confirmed using the manufacture’s equipment and

materials. However, when soldering these products, the soldering condition should be verified by

customer using their equipment and materials.

Tem

pera

ture

(d

eg

.C)


SMM5846V1D

Edition 1.1

Mar. 2016 17

CAUTION

This product contains gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For

safety, observe the following procedures:

・Do not put these products into the mouth.

・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as

these by-products are dangerous to the human body if inhaled, ingested, or swallowed.

・Observe government laws and company regulations when discarding this product. This product must be discarded in

accordance with methods specified by applicable hazardous waste procedures.

electrical characteristics (case … ka-band point to point radio communication. sumitomo’s...

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