ee370 chapter1 slides

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7/31/2015 1 EE370 Digital Electronics Yogesh S. Chauhan Department of Electrical Engineering IIT Kanpur Email: [email protected] Office: WL125, Phone: 7244 Computer An electronic device which is capable of receiving information (data) in a particular form and of performing a sequence of operations in accordance with a predetermined but variable set of procedural instructions (program) to produce a result in the form of information or signals. Minimize human efforts with speed and efficiency. Y. S. Chauhan, IIT Kanpur 2 Why Digital? Noise Margin – Can be reduced to the limit we want Fidelity/Regeneration Robustness Scalability Data Storage Ease of data handling Y. S. Chauhan, IIT Kanpur 3 Digital System Y. S. Chauhan, IIT Kanpur 4

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a brief introduction to DIGITAL ELECTRONICS

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  • 7/31/2015

    1

    EE370Digital Electronics

    Yogesh S. ChauhanDepartment of Electrical Engineering

    IIT KanpurEmail: [email protected]

    Office: WL125, Phone: 7244

    Computer

    An electronic device which is capable of receiving information (data) in a particular form and of performing a sequence of operations in accordance with a predetermined but variable set of procedural instructions (program) to produce a result in the form of information or signals.

    Minimize human efforts with speed and efficiency.

    Y. S. Chauhan, IIT Kanpur 2

    Why Digital?

    Noise Margin Can be reduced to the limit we want

    Fidelity/Regeneration Robustness Scalability Data Storage Ease of data handling

    Y. S. Chauhan, IIT Kanpur 3

    Digital System

    Y. S. Chauhan, IIT Kanpur 4

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    2

    The First Computer

    Y. S. Chauhan, IIT Kanpur 5

    The BabbageDifference Engine(1832)

    25,000 partscost: 17,470

    ENIAC - The first electronic computer (1946)

    17,468 vacuum tubes

    7200 crystal diodes

    1500 relays 70,000 resistors 10,000 capacitors Weight > 27 Ton 1800 sq. ft. 150 kW of

    electricityY. S. Chauhan, IIT Kanpur 6

    The Transistor Revolution

    Y. S. Chauhan, IIT Kanpur 7

    First transistorBell Labs, 1948

    The First Integrated Circuits

    Y. S. Chauhan, IIT Kanpur 8

    Bipolar logic1960s

    ECL 3-input GateMotorola 1966

  • 7/31/2015

    3

    Intel 4004 Micro-Processor

    Y. S. Chauhan, IIT Kanpur 9

    19711000transistors1MHzoperation

    Intel Pentium (IV) microprocessor

    Y. S. Chauhan, IIT Kanpur 10

    Moores Law In 1965, Gordon Moore noted that the number of

    transistors on a chip doubled every 18 to 24 months. He made a prediction that semiconductor technology

    will double its effectiveness every 18 months

    Y. S. Chauhan, IIT Kanpur 11

    16151413121110

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    Transistor Counts

    Y. S. Chauhan, IIT Kanpur 12

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    4

    Moores law in Microprocessors

    Y. S. Chauhan, IIT Kanpur 13

    40048008

    80808085 8086

    286386

    486Pentium proc

    P6

    0.001

    0.01

    0.1

    1

    10

    100

    1000

    1970 1980 1990 2000 2010Year

    T

    r

    a

    n

    s

    i

    s

    t

    o

    r

    s

    (

    M

    T

    )

    2Xgrowthin1.96years!

    TransistorsonLeadMicroprocessorsdoubleevery2years

    Die Size Growth

    Y. S. Chauhan, IIT Kanpur 14

    40048008

    80808085

    8086286

    386486 Pentiumproc

    P6

    1

    10

    100

    1970 1980 1990 2000 2010Year

    D

    i

    e

    s

    i

    z

    e

    (

    m

    m

    )

    ~7%growthperyear~2Xgrowthin10years

    Diesizegrowsby14%tosatisfyMooresLaw

    Frequency

    Y. S. Chauhan, IIT Kanpur 15

    P6Pentiumproc

    48638628680868085

    8080800840040.1

    1

    10

    100

    1000

    10000

    1970 1980 1990 2000 2010Year

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    r

    e

    q

    u

    e

    n

    c

    y

    (

    M

    h

    z

    )

    LeadMicroprocessorsfrequencydoublesevery2years

    Doublesevery2years

    Power Dissipation

    Y. S. Chauhan, IIT Kanpur 16

    P6Pentiumproc

    486386

    2868086

    80858080

    80084004

    0.1

    1

    10

    100

    1971 1974 1978 1985 1992 2000Year

    P

    o

    w

    e

    r

    (

    W

    a

    t

    t

    s

    )

    LeadMicroprocessorspowercontinuestoincrease

    Courtesy,Intel

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    5

    Power density

    Y. S. Chauhan, IIT Kanpur 17

    400480088080

    8085

    8086

    286 386 486Pentium proc

    P6

    1

    10

    100

    1000

    10000

    1970 1980 1990 2000 2010Year

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    o

    w

    e

    r

    D

    e

    n

    s

    i

    t

    y

    (

    W

    /

    c

    m

    2

    )

    HotPlate

    NuclearReactor

    RocketNozzle

    Powerdensitytoohightokeepjunctionsatlowtemp

    Power is a major problem

    Y. S. Chauhan, IIT Kanpur 18

    5KW18KW

    1.5KW500W

    40048008

    80808085

    8086286

    386486

    Pentium proc

    0.1

    1

    10

    100

    1000

    10000

    100000

    1971 1974 1978 1985 1992 2000 2004 2008Year

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    o

    w

    e

    r

    (

    W

    a

    t

    t

    s

    )

    Powerdeliveryanddissipationwillbeprohibitive

    Not Only Microprocessors

    Y. S. Chauhan, IIT Kanpur 19

    AnalogBaseband

    DigitalBaseband

    (DSP+MCU)

    PowerManagement

    SmallSignalRF

    PowerRF

    CellPhone

    Challenges in Digital Design

    Y. S. Chauhan, IIT Kanpur 20

    Microscopic Problems Ultra-high speed design Interconnect Noise, Crosstalk Reliability, Manufacturability Power Dissipation Clock distribution.

    Everything Looks a Little Different

    Macroscopic Issues Time-to-Market Millions of Gates High-Level Abstractions Reuse & IP: Portability Predictability etc.

    and Theres a Lot of Them!

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    6

    Why Scaling?

    Technology shrinks by 0.7/generation With every generation can integrate 2X more

    functions per chip; chip cost does not increase significantly

    Cost of a function decreases by 2x But

    How to design chips with more and more functions? Design engineering population does not double every

    two years Hence, a need for more efficient design methods

    Exploit different levels of abstraction

    Y. S. Chauhan, IIT Kanpur 21

    Design Abstraction Levels

    Y. S. Chauhan, IIT Kanpur 22

    n+n+S

    GD

    +

    DEVICE

    CIRCUIT

    GATE

    MODULE

    SYSTEM

    DesignAutomationisthekey.

    Design Metrics

    How to evaluate performance of a digital circuit (gate, block, )? Cost Reliability Scalability Speed (delay, operating frequency) Power dissipation Energy to perform a function

    Y. S. Chauhan, IIT Kanpur 23

    Cost of Integrated Circuits

    NRE (non-recurring engineering) costs Design time and effort, mask generation One-time cost factor

    Recurring costs Silicon processing, packaging, test proportional to volume proportional to chip area

    Y. S. Chauhan, IIT Kanpur 24

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    7

    Cost of Integrated Circuits

    Cost per IC = Variable cost per IC + (fixed cost/volume)

    The impact of fixed cost is more pronounced for small volume products.

    Y. S. Chauhan, IIT Kanpur 25

    NRE Cost is Increasing

    Y. S. Chauhan, IIT Kanpur 26

    Die Cost

    Y. S. Chauhan, IIT Kanpur 27

    Single die

    Wafer

    From http://www.amd.com

    Going up to 12 (30cm)

    Cost per Transistor

    Y. S. Chauhan, IIT Kanpur 28

    0.0000001

    0.000001

    0.00001

    0.0001

    0.001

    0.01

    0.11

    1982 1985 1988 1991 1994 1997 2000 2003 2006 2009 2012

    cost: -per-transistor

    Fabrication capital cost per transistor (Moores law)

  • 7/31/2015

    8

    Yield

    Y. S. Chauhan, IIT Kanpur 29

    %100per wafer chips ofnumber Total

    per wafer chips good of No. Y

    yield Dieper wafer Dies

    costWafer cost Die

    area die2

    diameterwafer

    area die

    diameter/2wafer per wafer Dies

    2

    Yield

    Y. S. Chauhan, IIT Kanpur 30

    %100per wafer chips ofnumber Total

    per wafer chips good of No. Y

    yield Dieper wafer Dies

    costWafer cost Die

    Defects

    Y. S. Chauhan, IIT Kanpur 31

    area dieareaunit per defects1yield die is approximately 3

    4area) (die cost die f

    Some Examples (1994)

    Y. S. Chauhan, IIT Kanpur 32

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    9

    ReliabilityNoise in Digital Integrated Circuits

    Noise unwanted variations of voltages and currents at the logic nodes

    Y. S. Chauhan, IIT Kanpur 33

    i(t)

    Inductive coupling Capacitive coupling Power and groundnoise

    v(t) VDD

    Voltagechangeononewirecaninfluencesignalontheneighboringwire

    crosstalk

    Currentchangeononewirecaninfluencesignalontheneighboringwire

    Example of Capacitive Coupling

    Signal wire glitches as large as 80% of the supply voltage will be common due to crosstalk between neighboring wires as feature sizes continue to scale

    Y. S. Chauhan, IIT Kanpur 34

    Crosstalkvs.Technology

    0.16mCMOS0.12mCMOS

    0.35mCMOS

    0.25mCMOS

    PulsedSignal

    BlacklinequietRedlinespulsedGlitchesstrengthvstechnology

    FromDunlop,Lucent,2000

    Lets start Digital Electronics

    Digital Electronics uses binary number system Logic 0 == Logic Low Logic 1 == Logic High

    Real world is not digital

    Y. S. Chauhan, IIT Kanpur 35

    Analog to Digital conversion

    Y. S. Chauhan, IIT Kanpur 36

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    10

    Binary digital signal

    Y. S. Chauhan, IIT Kanpur 37

    Digital Logic Inverter

    The logic inverter is the most basic element in digital circuit design.

    It plays a role parallel to that of the amplifier in analog circuits. Inverter inverts the logic value of its input signal. Thus, for a logic-0 input, the output will be a logic 1, and vice

    versa.

    Y. S. Chauhan, IIT Kanpur 38

    Input-Output characteristics of an Inverter

    Lets draw.

    Y. S. Chauhan, IIT Kanpur 39

    Amplifier vs. Inverter

    Y. S. Chauhan, IIT Kanpur 40

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    11

    DC OperationVoltage Transfer Characteristic (VTC)

    VIL Max. value vI can have while being interpreted as logic 0.

    VIH Min. value vI can have while being interpreted as logic 1.

    Y. S. Chauhan, IIT Kanpur 41

    IsitInverter?

    Exactvalueofinputdoesntmatter.

    Noise Margins

    Y. S. Chauhan, IIT Kanpur 42

    Insensitivity of the inverter output to the exact value of vI within allowed regions is a great advantage that digital circuits have over analog circuits.

    Consider an inverter driving inverter.

    Noise Margins

    Four parameters, VOH, VOL, VIH, and VIL, define the VTC of an inverter and determine its noise margins Changes in vI within the noise margins are rejected by the inverter. Noise is not allowed to propagate further through the system, a definite

    advantage of digital over analog circuits. You can think of the inverter as restoring the signal levels to

    standard values (VOL and VOH) even when it is presented with corrupted input signal levels (within the noise margins).

    Y. S. Chauhan, IIT Kanpur 43

    ImportantParametersoftheVTCoftheLogicInverter

    Voltage Transfer Characteristic

    Switching Threshold Voltage

    Y. S. Chauhan, IIT Kanpur 44

    Vin

    Vout

    VOH

    VOL

    VM

    VOHVOL

    Vout=Vin

    SwitchingThreshold

    NominalVoltageLevels

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    12

    Voltage Transfer Characteristic

    Switching Threshold Voltage (VM) Output is short circuited with input.

    Y. S. Chauhan, IIT Kanpur 45V(x)

    V(y)

    f

    V(y)V(x)

    VOH = f (VIL)

    VIL VIH

    V(y)=V(x)

    Switching ThresholdVM

    VOL = f (VIH)

    Vout=f(Vin)

    Mapping between analog and digital signals The regions of acceptable high and low voltages are delimited

    by VIH and VIL that represent the points on the VTC curve where the gain = -1

    Y. S. Chauhan, IIT Kanpur 46V IL V IH V in

    Slope = -1

    Slope = -1

    V OL

    V OH

    Vout

    0 VOL

    VIL

    VIH

    VOH

    UndefinedRegion

    1

    Noise Margins For robust circuits, want the 0 and 1 intervals to be as

    large as possible

    Y. S. Chauhan, IIT Kanpur 47

    UndefinedRegion

    "1"

    "0"

    Gate Output Gate Input

    VOH

    VIL

    VOL

    VIHNoise Margin High

    Noise Margin Low

    NMH = VOH - VIH

    NML = VIL - VOL

    Gnd

    VDD VDD

    Gnd

    Large noise margins are desirable, but not sufficient

    The Regenerative Property A gate with regenerative property ensure that a disturbed

    signal converges back to a nominal voltage level

    Y. S. Chauhan, IIT Kanpur 48

    v0 v1 v2 v3 v4 v5 v6

    -1

    1

    3

    5

    0 2 4 6 8 10

    t (nsec)

    V

    (

    v

    o

    l

    t

    s

    ) v0

    v2

    v1

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    13

    Conditions for Regeneration

    To be regenerative, the VTC must have a transient region with a gain greater than 1 (in absolute value) bordered by two valid zones where the gain is smallerthan 1. Such a gate has two stable operating points.

    Y. S. Chauhan, IIT Kanpur 49

    v1 = f(v0) v1 = finv(v2)v0 v1 v2 v3 v4 v5 v6

    v0

    v1

    v2

    v3 f(v)

    finv(v)

    Regenerative Gate

    v0

    v1

    v2

    v3

    f(v)

    finv(v)

    Nonregenerative Gate

    in

    out

    in

    out

    Noise Immunity

    Noise margin expresses the ability of a circuit to overpower a noise source noise sources: supply noise, cross talk, interference, offset

    Absolute noise margin values are deceptive a floating node is more easily disturbed than a node driven by a

    low impedance (in terms of voltage) Noise immunity expresses the ability of the system to

    process and transmit information correctly in the presence of noise Transfer function between noise source and signal node is

  • 7/31/2015

    14

    VTC of an ideal inverter

    Y. S. Chauhan, IIT Kanpur 53

    VTC of an ideal inverter The ideal gate should have

    Infinite gain in the transition region Switching threshold located in the middle of the logic swing High and low noise margins equal to half the swing Input and output impedances of infinity and zero, respectively

    Y. S. Chauhan, IIT Kanpur 54

    Ri = Ro = 0Fanout = NMH = NML = VDD/2

    g =

    V in

    V out

    An Old-time Inverter

    VOH=3.5V VIH=2.35V VM=1.64V NMH=1.15V

    VOL=0.45V VIL=0.66V NML=0.21V

    Y. S. Chauhan, IIT Kanpur 55

    NM H

    Vin (V)

    V

    o

    u

    t

    (

    V

    )

    NM L

    VM

    0.0

    1.0

    2.0

    3.0

    4.0

    5.0

    1.0 2.0 3.0 4.0 5.0

    VOL

    VOL

    VOH

    VOH

    VIL VIH

    Note Asymmetric NML is low Swing=3.05V

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    15

    Delay Definitions

    Y. S. Chauhan, IIT Kanpur 57

    t

    Vout

    Vin

    inputwaveform

    outputwaveform

    tp =(tpHL +tpLH)/2

    Propagationdelay

    t

    50%

    tpHL

    50%

    tpLH

    tf

    90%

    10%tr

    signalslopes

    Vin Vout

    How fast we can toggle?

    tpLH and tpHL can be asymmetric

    Time period T> max(tpLH, tpHL)x2 If symmetric, T> max(tp)x2 Duty cycle

    time for which it is ON/ (Time period) Usually its 50%: Rise and fall should occur within T/2 time

    Y. S. Chauhan, IIT Kanpur 58

    Vin Vout

    How to compare delay in different technologies?

    Y. S. Chauhan, IIT Kanpur 59

    v0 v1 v5

    v1 v2v0 v3 v4 v5

    T = 2 tp N

    RingOscillator

    N=numberofinverters

    Modeling Propagation Delay

    Model circuit as first-order RC network

    Y. S. Chauhan, IIT Kanpur 60

    R

    C

    vin

    vout

    vout (t) = (1 et/)V

    where = RCTime to reach 50% point is

    0V

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    16

    Modeling Propagation Delay

    Model circuit as first-order RC network

    Y. S. Chauhan, IIT Kanpur 61

    R

    C

    vin

    vout

    vout (t) = (1 et/)V

    where = RCTime to reach 90% from 10% point is

    0V

    Modeling Propagation Delay

    Model circuit as first-order RC network

    Matches the delay of an inverter gateY. S. Chauhan, IIT Kanpur 62

    R

    C

    vin

    vout

    vout (t) = (1 et/)V

    where = RC

    Time to reach 50% point ist = ln(2) = 0.69

    Time to reach 90% from 10% point ist = ln(9) = 2.2

    0V

    Power and Energy Dissipation

    Power consumption: how much energy is consumed per operation and how much heat the circuit dissipates Supply line sizing (determined by peak power)

    Ppeak = Vdd.ipeak=max(p(t)) Battery lifetime (determined by average power dissipation)

    .

    1

    Packaging and cooling requirements

    Y. S. Chauhan, IIT Kanpur 63

    Static and Dynamic power

    Two important components: static and dynamic Static power dissipation:

    Caused by static conductive paths between the supply rails or by leakage currents.

    Always present, even when the circuit is in stand-by. Minimization of this consumption source is a worthwhile goal.

    Dynamic power dissipation: Occurs only during transients, when the gate is switching.

    Charging of capacitors & temporary current paths between supply rails. Proportional to the switching frequency: the higher the number

    of switching events, the higher the dynamic power consumption.

    Y. S. Chauhan, IIT Kanpur 64

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    17

    A First-Order RC Network

    Y. S. Chauhan, IIT Kanpur 65

    vout

    vin CL

    R

    E0 1 P t dt0

    T

    =

    Energydissipatedfromsource

    Energytransferredtocapacitor

    Ecap Pcap t dt0

    T

    =

    V(t)=VDD

    V(t)=Vout

    A First-Order RC Network

    Y. S. Chauhan, IIT Kanpur 66

    vout

    vin CL

    R

    E0 1 P t dt0

    T

    Vdd isupply t dt0

    T

    Vdd CLdVout0

    Vdd

    CL Vdd 2= = = =

    Energydissipatedfromsource

    Energytransferredtocapacitor

    Whereisotherhalf?

    Ecap Pcap t dt0

    T

    Vouticap t dt0

    T

    CLVoutdVout0

    Vdd

    12---CL Vdd2

    = = = =

    Energy and Power

    Y. S. Chauhan, IIT Kanpur 67

    E (joules) = CL Vdd2 P01 + tsc Vdd Ipeak P01 + Vdd Ileakage

    P (watts) = CL Vdd2 f01 + tscVdd Ipeak f01 + Vdd Ileakage

    f01 = P01 * fclock

    Energy and Energy-Delay

    Propagation delay and power consumption of a gate are related Propagation delay is mostly determined by the speed at which a given

    amount of energy can be stored on the gate capacitors. The faster the energy transfer (or the higher the power consumption),

    the faster the gate. Product of power consumption and propagation delay is generally a

    constant for a given technology and gate topology.

    An ideal gate is one that is fast, and consumes little energy. The energy-delay product is a combined metric that brings those two

    elements together, and is often used as the ultimate quality metric.

    Y. S. Chauhan, IIT Kanpur 68

    Power-Delay Product (PDP) =

    E = Energy per operation = Pav tp

    Energy-Delay Product (EDP) =

    quality metric of gate = E tp

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    18

    Analog vs. DigitalAnalog Digital

    1. Computewithcontinuousvaluesofphysicalvariablesinsomerange

    Computewithdiscretevaluesofphysicalvariables

    2. Primitivesofcomputationarisefromthephysicsofthecomputingdevices:physicalrelationsoftransistors,capacitors,resistors,floatinggatedevices,Kirchoffs currentandvoltagelawsandsoforth.Theuseoftheseprimitivesisanartformanddoesnotlenditselfeasilytoautomation. Theamountofcomputationsqueezedoutofasingletransistorishigh.

    PrimitivesofcomputationarisefromthemathematicsofBooleanlogic:logicalrelationslikeAND,OR,NOT,NAND,andXOR.Theuseoftheseprimitivesisascienceandlendsitselfeasilytoautomation.Thetransistorisusedasaswitch,andtheamountofcomputationsqueezedoutofasingletransistorislow.

    3. Computationisoffsetpronesinceitissensitivetomismatchesintheparametersofthephysicaldevices.Thedegradationinperformanceisgraceful.

    Computationisnotoffsetpronesinceitisinsensitivetomismatchesintheparametersofthephysicaldevices.However,asinglebiterrorcanresultincatastrophicfailure.

    Y. S. Chauhan, IIT Kanpur 69

    Analog vs. Digital

    Y. S. Chauhan, IIT Kanpur 70

    Analog Digital4. Noiseisduetothermalfluctuationsin

    physicaldevices.Noiseisduetoroundofferror.

    5. Signalisnotrestoredateachstageofthecomputation.

    Signalisrestoredto1or0ateachstageofthecomputation.

    6. Inacascadeofanalogstages,noisestartstoaccumulate.Thus,complexsystemswithmanystagesaredifficulttobuild.

    Roundofferrordoesnotaccumulatesignificantlyformanycomputations.Thus,complexsystemswithmanystagesareeasytobuild.

    7. StaticpowerdissipationPA=N.VDD.I

    Static powerisduetoleakagecurrentsonly.

    8. Littleornodynamicpowerdissipation DynamicpowerconsumptionPD=N.f.C.VDD2

    Inside chip

    Y. S. Chauhan, IIT Kanpur 71

    Acknowledgement

    Jan M. Rabaey book Irwin & Vijays slides, Penn State University Sedra and Smith book S.S.K. Iyer, IIT Kanpur Course TAs

    Y. S. Chauhan, IIT Kanpur 72

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