ee 330 lecture 13 devices in semiconductor processesclass.ece.iastate.edu/ee330/lectures/ee 330 lect...
TRANSCRIPT
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EE 330Lecture 13
Devices in Semiconductor Processes
• Resistors
• Diodes
• Capacitors
• MOSFETs
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Exam 1 ScheduleExam 1 will be given on Friday September 18
Format: Open-Book, Open Notes
Exam will be posted at 9:00 a.m. on the class WEB site and will be due at 1:00 p.m. as a .pdf upload on CANVAS
It will be structured to be a 50-minute closed-book closed-notes exam but administered as an open-book, open-notes exam with a 4 hour open interval so reserving the normal lecture period for taking the exam should provide adequate time
For anyone with approved special accommodations, the 4-hour open interval should cover extra time allocations but if for any reason this does not meet special accommodation expectations, please contact the instructor by Monday Sept. 14 if alternative accommodations are requested.
Honor System Expected
It is expected that this exam be an individual effort and that students should not have input in any form from anyone else during the 4-hour open interval of the exam except from the course instructor who will be responding to email messages from 11:00 a.m. to 1:00 p.m. on the date of the exam.
Special Accommodations
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Resistivity of Materials used in Semiconductor Processing
• Cu: 1.7E-6 cm
• Al: 2.7E-4 cm
• Gold: 2.4E-6 cm
• Platinum: 3.0E-6 cm
• Polysilicon: 1E-2 to 1E4 cm*
• n-Si: typically .25 to 5 cm* (but larger range possible)
• intrinsic Si: 2.5E5cm
• SiO2: E14 cm
* But fixed in a given process
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http://www.cleanroom.byu.edu/ResistivityCal.phtml
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http://www.cleanroom.byu.edu/ResistivityCal.phtml
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http://www.cleanroom.byu.edu/ResistivityCal.phtml
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Temperature CoefficientsUsed for indicating temperature sensitivity of resistors & capacitors
6
op. temp
1 dRTCR 10 ppm C
R dT
This diff eqn can easily be solved if TCR is a constant
TCR
10
TT
12
6
12
TRTR
e
6121210
TCRTT1 TRTR
For a resistor:
Identical Expressions for Capacitors
It follows that If TCR*(T2-T1) is small,
xe 1 x If x is small,
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Voltage CoefficientsUsed for indicating voltage sensitivity of resistors & capacitors
6
ref voltage
1 dRVCR 10 ppm V
R dV
This diff eqn can easily be solved if VCR is a constant
VCR
VV
12
12
VRVR610
e
6121210
VCRVV VRVR 1
For a resistor:
Identical Expressions for Capacitors
It follows that If VCR*(V2-V1) is small,
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Temperature and Voltage Coefficients
• Temperature and voltage coefficients often quite large for diffused resistors
• Temperature and voltage coefficients often quite small for poly and metal film (e.g. SiCr) resistors
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From:F. Maloberti : Design of CMOS Analog Integrated Circuits - “Resistors, Capacitors, Switches”
(absolute)
(relative accuracy much better and can be controlled by designer)
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From Allen Holberg Third Edition
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From ECE 6440 Lecture by P. Allen
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Example: Determine the percent change in resistance of a 5K Polysilicon
resistor as the temperature increases from 30oC to 60oC if the TCR is
constant and equal to 1500 ppm/oC
Thus the resistor increases by 4.5%
2 1 2 1 61
10
TCRR T R T T T
2 1 6
2 1
2 1
15001 30
10
1 .045
1.045
oR T R T C
R T R T
R T R T
What is R(T1) as stated in this example ? 5K?It is around 5K but if we want to be specific, would need to specify T
Did not need R(T1) to answer this question !
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Basic Devices and Device Models
• Resistor
• Diode
• Capacitor
• MOSFET
• BJT
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http://www.dayah.com/periodic/Images/periodic%20table.png
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4 valence-band
Electrons
group (or family)
All elements in group IV have 4 valence-band electrons
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Only 3 Valence-
band Electrons
Serves as an “acceptor” of electrons
Acts as a p-type impurity when used as a silicon dopant
All elements in group III have 3 valence-band electrons
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http://www.oftc.usyd.edu.au/edweb/devices/semicdev/doping4.html
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Five Valence-
band Electrons
Serves as an “donor ” of electrons
Acts as an n-type impurity when used as a silicon dopant All elements in group V have 5 valence-band electrons
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B (Boron) widely used a dopant for creating p-type regions
P (Phosphorus) widely used a dopant for creating n-type regions
(bulk doping, diffuses fast)
As (Arsenic) widely used a dopant for creating n-type regions
(Active region doping, diffuses slower)
Silicon Dopants in Semiconductor Processes
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Diodes (pn junctions)
Depletion region created that is ionized but void of carriers
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pn Junctions
Physical Boundary
Separating n-type and
p-type regions
If doping levels identical, depletion region extends
equally into n-type and p-type regions
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pn Junctions
Physical Boundary
Separating n-type and
p-type regions
Extends farther into p-type region if p-doping lower
than n-doping
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pn Junctions
Physical Boundary
Separating n-type and
p-type regions
Extends farther into n-type region if n-doping lower
than p-doping
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pn Junctions
VD
ID
• Positive voltages across the p to n junction are referred to forward bias
• As forward bias increases, depletion region thins and current starts to flow
• Current grows very rapidly as forward bias increases
• Current is very small under revere bias
• Negative voltages across the p to n junction are referred to reverse bias
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pn Junctions
ID
VD
Anode
Cathode
Anode
CathodeCircuit Symbol
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pn Junctions
• As forward bias increases, depletion region thins and current starts to flow
• Current grows very rapidly as forward bias increases
ID
VD
Anode
Cathode
Simple Diode Model:
D D
D D
V =0 I >0
I =0 V <0
VD
ID
Simple model often referred to as the “Ideal” diode model
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pn JunctionsID
VD
Simple Diode Model:
VD
ID
pn junction serves as a “rectifier” passing current in one direction and blocking it
in the other direction
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Rectifier Application: Simple Diode Model:
VD
ID
1K
VOUT
D1
VIN=VMsinωt
VIN
VM
t
VM
t
VIN
VOUT
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I-V characteristics of pn junction(signal or rectifier diode)
Vd
Id
d
t
V
nV
D SI I e 1
Diode Equation
Improved Diode Model:IS in the 10fA to 100fA range
What is Vt at room temp?
t
kTV =
q
k= 1.380 64852 × 10−23JK-1
q = −1.60217662×10−19 Ck/q=8.62× 10−5 VK-1
Vt is about 26mV at room temp
Diode equation due to William
Shockley, inventor of BJT
In 1919, William Henry Eccles
coined the term diode
In 1940, Russell Ohl “stumbled
upon” the p-n junction diode
IS proportional to junction area
n typically about 1
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I-V characteristics of pn junction(signal or rectifier diode)
Vd
Id
SD II
Diode Characteristics
0
0.002
0.004
0.006
0.008
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Vd (volts)
Id (
am
ps)
d
t
V
nV
D SI I e 1
Diode Equation
Under reverse bias (Vd<0),
Under forward bias (Vd>0),
d
t
V
nV
D SI I e
Diode Equation or forward bias simplification is unwieldy to work with analytically
Improved Diode Model:
Simplification of Diode Equation:
Simplification essentially identical model except for Vd very close to 0
IS in 10fA -100fA range (for signal diodes)
Vt is about 26mV at room temp
t
kTV =
q
k/q=8.62× 10−5 VK-1
n typically about 1
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Diode Equation (even simplification) unwieldly to work with analytically. Why?
World’s simplest diode circuit 1K
VOUTD1
VIN=5V
VIN
ID + -VD
Determine VOUT
5
1
D
t
D OUT
OUT D
V
nV
D S
V V
V I K
I I e
Assume forward bias , simplified diode equation model
5
1OUT
t
V
nV
OUT SV I e K
VOUT=?
Explicit expression does not exist for VOUT !
3 independent equations and 3 unknowns
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I-V characteristics of pn junction(signal or rectifier diode)
SD II
d
t
V
nV
D SI I e 1
Diode Equation
Under reverse bias,
Under forward bias,
d
t
V
nV
D SI I e
Improved Diode Model:
Simplification of Diode Equation:
IS often in the 10fA to 100fA range
Vt is about 26mV at room temp
How much error is introduced using the simplification for Vd > 0.5V ? (assume n=1)
9
0 5
026
14 4 10
.
.
.
e
How much error is introduced using the simplification for Vd < - 0.5V? 0 5
9026 4 4 10.
. .e
Simplification almost never introduces any significant error
1eI
eI1eI
t
d
t
d
t
d
V
V
S
V
V
S
V
V
S
IS proportional to junction area
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Will you impress your colleagues or your boss if you use the more exact diode equation when Vd < -0.5V or Vd > +0.5V ?
Will your colleagues or your boss be unimpressed if you use the more exact diode equation when Vd < -0.5V or Vd > +0.5V ?
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pn Junctions
VI
0V0
0VAeJITnV
V
S
I
V
Diode Equation:(good enough for most applications)
JS= Sat Current Density (in the 1aA/u2 to 1fA/u2 range)
A= Junction Cross Section Area
VT=kT/q (k/q=1.381x10-23V•C/°K/1.6x10-19C=8.62x10-5V/°K)
n is approximately 1
Anode
Cathode
Note: IS=JsA
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pn Junctions
0V0
0VAeJITnV
V
S I
V
Diode Equation:Anode
Cathode
JS is strongly temperature dependent
G0
t
-V
nVm
S SXJ J T e
With n=1, for V>0,
Typical values for key parameters: JSX=0.5A/μ2, VG0=1.17V, m=2.3, n=1
G0 D
t t
-V V
nV nVm
SXI(T) J T e Ae
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Stay Safe and Stay Healthy !
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End of Lecture 13