ece 695: processing plasma: etching jk lee (spring, 2006)
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ECE 695: Processing Plasma: Etching
JK LEE (Spring, 2006)
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IEDF Affects Contact Process• Etch stop
• High polymerization with low energy ions
• Ion shading effect, large ion angular dist.
•Bowing – Ion specular reflection
•High polymerization and large Ion energy
•Ion shading effect, some ion angular dist.
• Straight profile
• Low pressure, collisionless sheath
• Optimum polymerization with medium ion energy
• Vertical mask profile, less ion specular reflection
• Low ion shading effect, small ion angular dist.
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Profile Control – IEDF and Polymer
• 1D PIC code – 3 years in development with POSTECH/Lam
• Bulk plasma and polymerization assumption
• Can be linked to 2D/3D profile simulators
• 2D/3D Profile Simulators
• Ion flux and density from bulk simulator
• Can be used to predict contact profiles
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Plasma ApplicationModeling, POSTECH
Speed Function (Compared)
1F k 1F
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Plasma ApplicationModeling, POSTECH
Speed Function (Mask Pattern)
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Plasma ApplicationModeling, POSTECH
Speed Function (Depending On The Particle Flux)
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Plasma ApplicationModeling, POSTECH
Speed Function (Depending On The Particle Flux)
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2005. 3. 10
SimulationSimulation 을 이용한을 이용한 Plasma Plasma 특성연구특성연구
H.S. Ko and J.K. Lee Department of Electronic and Electrical Engineering,
POSTECH
( Comparison of Plasma Kinetic Properties of Various Equipments )( Comparison of Plasma Kinetic Properties of Various Equipments )
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SCCM-TE (TEL) Exelan-CFE (Lam) Enalber (AMT)
D92 SAC Etcher D92 SiN mask Etcher -
▶ Dual-CCP 4.5cm, 30mT▶ Uniformity : - Dual cathode - Dual gas feed
▶ Narrow Dual-CCP : 2.0cm, 40mT▶ PR Selectivity : Heated top electrode▶ Uniformity : Dual gas feed
▶ VHF Dual-CCP : Very High Freq. 3.2cm, 30mT▶ High E/R & PR Sel. : Very High frequency▶ Uniformity : - CSTU : Vertical B-Field - NSTU : Dual gas feed
~
~ 60MHz
2MHz ~ 13.56MHz
~162MHz
Specification of EquipmentsSpecification of Equipments
ApplicationApplication Plasma Plasma Modeling Modeling
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0 10 20 30 40 50 60 70 80
0
100
200
300
400
500
600
700
800
TEL_60MHz_4.5cm (SEEC=E,A dependence)
Bre
akd
ow
n V
olt
age,
VB
r
Pressure,mTorr
0 10 20 30 40 500
20
40
60
80
100
120
140
160
180
200
2MHz(0V) 2MHz(145V) 2MHz(400V) 2MHz(720V)
Paschen Breakdown Voltage Curve
0 10 20 30 40 50 60 70 80
0
100
200
300
400
500
600
700
800
900
1000
Pressure,mTorr
Bre
akd
ow
n V
olt
ag
e, V B
r
AMT_162MHz (3.2cm) TEL_60MHz (4.5cm) Lam_27MHz (2cm)
0 10 20 30 40 50 60 700
100
200
300
400
500
600
700
800
900
1000
Lam_27MHz_2cm (SEEC=E.A dependence)
Bre
akd
ow
n V
olt
ag
e, V
Br
Pressure,mTorr
2MHz(0V) 2MHz(145V) 2MHz(400V) 2MHz(720V)
0 10 20 30 40 50 60 70 80
0
100
200
300
400
500
600
700
800
AMT_162MHz_3.2cm (SEEC=E,A dependence)
Pressure,mTorr
Bre
akd
ow
n V
olt
age,
VB
r
0 10 20 30 40 50
0
20
40
60
80
100
120
140
160
180
200
13.56MHz(0V) 13.56MHz(50V) 13.56MHz(150V) 13.56MHz(300V)
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