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ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara [email protected] 805-893-3244, 805-893-3262 fax

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Page 1: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

ECE 2C, notes set 2: Active Devices

Mark Rodwell

University of California, Santa Barbara

[email protected] 805-893-3244, 805-893-3262 fax

Page 2: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

Goals of this note set:

model limited- velocityfashioned-old-lessslighly

model. limited-mobility fashioned-old

MOSFETs of models almathematicRough

stics.characteri voltage-current FET

operation FET of sense physicalRough

Page 3: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

N-Channel MOSFET

Page 4: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

Field-Effect Transistor Operation

source drain

gate

Positive Gate Voltage

→ reduced energy barrier

→ increased drain current

Page 5: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

Field-Effect Transistor Operation

source drain

gate

Positive Gate Voltage

→ reduced energy barrier

→ increased drain current

Page 6: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

N-Channel MOSFET

Page 7: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

Physical Sketch

Page 8: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

MOSFET Physical Structure

N+ source N+ drain

source contact (silicide) drain contact (silicide)

N+ polygate

gate metal(silicide) dielectric

sidewall

gate oxide

P substrate

S D S D S D S

G

G

Wg

Cross-Section Layout

P substrate

gatedielectric

N+polysilicongate

inversionlayer

(6 FETs, each of gate width Wg , connected in parallel)

Page 9: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

MOSFET I-V characteristics

Page 10: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

MOSFET I-V characteristics

Page 11: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

Id

VgsVth

V

MOSFETs: Three Regions of Gate Voltage

2

, )(

limitedmobility iscurrent , thresholdabove littlea is When

thgsD

gs

VVI

V

)(

limited velocityiscurrent , thresholdabovefar is When

, VVVI

V

thgsvD

gs

mobility-limited

velocity-limited

ld"subthresho" :off (almost) isr transisto, threshold thanless is When gsV

almost off

/gsatLvV

Page 12: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

MOSFET DC Characteristics: Mobility-Limited Case

:current limitedmobility

Id

VgsVth

mobility-limited

velocity-limited

voltage,knee thenlarger tha voltagesdrainfor Applies

ID

VDS

increasingVGS

)1())(2/( 2

, DSthgsggoxD VVVLWcI

Page 13: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

MOSFET DC Characteristics: Velocity-Limited Case

))(1(, VVVVvWcI thgsDSsatgoxvD

Id

VgsVth

mobility-limited

velocity-limited

ID

VDS

increasingVGS

voltage,knee thenlarger tha voltagesdrainfor Applies

current limitedvelocity

/gsatLvV

Page 14: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

DC Characteristics---Far Above Threshold

/ where

1/)(for )(

gsat

thgsthgssatgoxD

LvV

VVVVVVvWcI

Id

VgsVth

V

classes. advanced moreyour in it

use pleasebut ece2C,in term theignore willWe V

Page 15: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

Paramers and Typical #s

V 20-3 typically1/ :sticscharacterioutput of slope gives

FETs-N modernfor V 0.4-0.2usually --- voltaged threshol

m10 nm 1about - thicknessoxide equivalent

)SiOfor 3.8 ( /area unit per ecapacitanc gate

FETs-N of that halfabout are and both FETs,channel-For P

MOSFET-Nfor s)-/(Vcm 400300~surfaceat mobility carrier

MOSFETs-Nfor cm/s 10~city drift velo saturation

9-

20

2

7

th

ox

roxrox

sat

sat

V

T

Tc

v

v

Page 16: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

Knee Voltage: Mobility-Limited Case

VGD=V

th

regionscurrent -constant and Ohmic the

betweenboundary thedefines voltageknee TheID

VDS

increasingVGS

Oh

mic

constant-current

thgsdsdg VVVV

whenoccurs curve in knee the

regime, limited-mobility theIn

IDRD

VGD=V

th

IDRS

s.resistance drain & source parasitic theacross drops

by voltage increasedfurther is Voltage KneeThe

Page 17: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

Knee Voltage: Velocity-Limited Case

/ whenoccurs

curve in knee theregime, limited- velocity theIn

gsatds LvV

s.resistance drain & source

parasitic theacross drops by voltage

increasedfurther is Voltage Knee theAgain,

VDS=v

satLg/

IDRD

VDS=v

satLg/

IDRS

Page 18: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

Which Model to use When ?

Id

VgsVth

/gsatLvV

mobility-limited

velocity-limited

modelvelocity -constant theuse , If

modelmobility -constant theuse ,/ where If

VVV

LvVVVV

thgs

gsatthgs

Page 19: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

Linear vs. Square-Law Characteristics: 90 nm

Page 20: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

Which Model to use When ?

Page 21: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

90 nm MOSFET DC Characteristics

3V~1/ V 6.0||

mm/S 7.0μm/mS 7.0/

channel-P

3V~1/ V 6.0

mm/S 4.1μm/mS 4.1/

channel-N

th

satoxgm

th

satoxgm

V

vcWg

V

vcWg

Page 22: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

180 nm MOSFET DC Characteristics

Page 23: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

P-Channel MOSFET

Page 24: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

P-Channel MOSFET

Page 25: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

P-Channel MOSFET

Page 26: ECE 2C, notes set 2: FET Models · ECE 2C, notes set 2: Active Devices Mark Rodwell University of California, Santa Barbara ... sat L g / P. MOSFET DC Characteristics: Mobility-Limited

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