DU’s proposed participation in the CMS Upgrade – Phase-II R&D

A.Bhardwaj, A.Kumar, M. Naimuddin, K.Ranjan, R.K.ShivpuriCenter for Detector & Related Software Technology (CDRST)

Delhi University (DU), Delhi, India

India-CMS Meeting, BARC, 28 July – 29 July, 2011

Si Tracker UpgradeAshutosh Bhardwaj, Kirti Ranjan, R.K. Shivpuri

Our Interest• Showed interest in Si Upgrade in Tracker in 2010

– Discussed with Frank Hartmann (then coordinating the overall sensor R&D activities and now Deputy PM) & Duccio Abbaneo (phase 2 overall coordination incharge) in May 2010.

– Several approved R&D projects for phase-II. Phase I R&D was frozen.

“Development of pixel and micro-strip sensors on radiation tolerant substrates for the tracker upgrade at SLHC”: Contact Person: M. de Palma ; submitted: April 2008 ; status: Approved; CMS SLHC RD #08.03“Materials, technologies and simulations for silicon sensor modules at intermediate to large radii of a new CMS tracker for SLHC” ; Hamburg, Karlsruhe, Louvain, Vienna, Vilnius; submitted: March 2008 ; status: Approved; CMS SLHC RD # 08.02

As a first step, we mutually decided to start up with some effort at DU in the existing R&D and then put up a formal presentation in the Tracker Group => Si Device Simulation

Proposal from Frank Hartmann on Si Device Simulation (July 2010): • The 12 strip of the multi-geometry strip cells, which comes with

different pitches & widths, in p-in-n & n-in-n version, also withp-spray and p-stop (isolation)

• The first goal should be to understand (interstrip) capacitance values, isolation and breakdown to support the measurements we are going to do.Further steps could be possible improvements of the geometry.Understanding of behavior after irradiation.

• As a second step, we should simulate some cells of the multi-geometrylong pixel structures, which come in the same configuration but inaddition with Rpoly biasing & punch-through biasing…

Si Device Simulation

Alberto Messino (Upgrade Sensor WG convener) volunteered to step in to define and watch the simulation program.• Start with a sort of "calibration" or better a comparison of our simulation

with existing published work. Claudio Piemonte, Device Simulations of Isolation Techniques for Silicon Microstrip Detectors Made on p-Type Substrates,in «IEEE TRANSACTIONS ON NUCLEAR SCIENCE»,vol. 53,n. 3,2006, pp. 1694-1705

http://cms-tracker.web.cern.ch/cms-tracker/TKorganisation/Phase2_Organization-DA.pdf

Tracker – Phase 2 Organization

Si Device Simulation– First ResultsTracker Week Meetings (11 - 15 Oct. 2010, CERN)https://indico.cern.ch/conferenceDisplay.py?confId=80952

- Upgrade Sensor WG meeting,- Frank Hartman (Sensor Technology Co-ordinator)

https://indico.cern.ch/getFile.py/access?contribId=0&sessionId=3&resId=1&materialId=slides&confId=80952

Si Device Simulation– First ResultsSimulation effort to support the HPK campaign 20‘https://indico.cern.ch/getFile.py/access?contribId=2&sessionId=3&resId=1&materialId=slides&confId=80952

Device Simulation Using ATLAS- Device Simulation Program From SilvacoTwo n+ neighbouring strips, with two intermediate p+ stops.

Report to Collaboration in India-CMS Meeting, 28 Oct. – 29 Oct. 2010

Si Device Simulation– First ResultsUpgrade Plenary Meeting; Friday 15 October 2010Progress and plans for sensors R&D 20' Speaker: F. Hartmann

Si Device Simulation– Further work• Continuous EVO meetings and discussions with Alberto Messino• Presented Results on MSSD Simulation in Tracker Week Meetings, 14 - 18

Feb. 2011 • https://indico.cern.ch/conferenceDisplay.py?confId=125774

• MSSD Simulation Results 20' https://indico.cern.ch/getFile.py/access?contribId=1&resId=0&materialId=slides&confId=125774

Si Device Simulation– Further workComparison Experimental/Simulation Measurement

Design # 3

• At low voltage the dip in the capacitance is similar• At Saturation, Exp DC-Cint = 0.9 pF > Sim DC-Cint = 0.63pF• Exp Vsaturation = 200-250V > Sim Vsaturation = 100-150V

0.9pF 0.63 pF200-250V100-150V

Similar behavior for low voltage

10

EXP  Cint SIM DC Cint

QF= 1e10 cm-2

Upgrade Phase II Plenary, 14 Feb. - 18 Feb. 2011 Overview of HPK sensors project, Alexander Dierlamm  45' https://indico.cern.ch/getFile.py/access?contribId=1&resId=1&materialId=slides&confId=127280

Si Device Simulation– Further work

Several groups showed their interests in Process/Device Simulation

Si Device Simulation– Further work

Simulation – SLHC Sensor R&D

https://twiki.cern.ch/twiki/bin/viewauth/CMS/SLHCSensorDevelopment

https://twiki.cern.ch/twiki/bin/viewauth/CMS/SLHCSensorDevelopment#Simulations

https://twiki.cern.ch/twiki/pub/CMS/SLHCSensorDevelopment/Simulation_tasks_V1.pdf

Simulations: Alberto Messineo (Universita di Pisa-Sezione di Pisa (INFN)), Tracker Week Meetings, 18 – 22 July, 2011 https://indico.cern.ch/getFile.py/access?contribId=8&resId=0&materialId=slides&confId=144303

Simulation – SLHC Sensor R&D

Present Facilities at DU

Ashutosh Bhardwaj, D. U.

• Class 10000 lab with class 100/1000 laminar flow tables (minor maintenance required)

• Keithley 237, Keithley 2410, Keithley 590 CV system

• Cascade Semi-automatic Probe Station• Keithley 2400 Semiconductor

Characterization System• Few test structures from Frank for 

characterization

Tracker DPG Tasks (service work)• Tracker Alignment using cosmics - present Results on Tracker Alignment in

– Tracker Detector Performance Group Weekly meetings (Thursday 23 June 2011) https://indico.cern.ch/conferenceDisplay.py?confId=127125– Weekly Tracker DPG meeting (08 July 2011)

https://indico.cern.ch/conferenceDisplay.py?confId=127126

Reported by Alignment conveners (Gero Flucke & Alessio Bonato) in Tracker General Meeting @ CMS Week, June 28th, 2011 https://indico.cern.ch/getFile.py/access?contribId=5&sessionId=0&resId=0&materialId=slides&confId=142604

Proposal– SLHC Sensor R&D • We have shown interest in participation in all activities related with

Si Sensor R&D in phase II of the CMS –• Simulation – already shown encouraging results – will continue.• Characterization – few test structures to be characterized.• Fabrication of sensors/test structures – will explore the possibility

• Interested in giving a presentation in Tracker Institutional Board meeting for formal induction

• 6k CHF /PhD/annum will be needed under M&O-B for Tracker from the year 2013. (for year 2012 – it’s 3k CHF per PhD)

• Also interested in joining RD50 (Radiation Hard Si Sensors R&D) – 3K CHF/institute/annum – lot of European facilities/expertise

MPGD UpgradeA.Kumar, Md. Naimuddin, R.K. Shivpuri

GEMs for CMS high eta upgrade(MPGD)The Physics case of challenging post-TDR scenario where:

-300 fb-1 already collected -centre-of-mass energy: 14TeV, lumi 2-3 x 1034cm-2s-1 -events are with nominal or 2 x nominal pile-up

Physics Goals:Boosted objects with muon-decay channels, asymmetry, coupling & spin

measurements, fusion processes.High luminosity physics:=> making a case for a coherent detector system in the true “forward” eta region- Triple boson production, Z’ factory physics, Exotic with light object decaying to muons

The GEM technology is likely to be a strong candidate for “forward” tracking:-spatial resolution ~ 100 microns, time resolution < 5ns, detector efficiency > 98% -precise tracking and fast trigger information simultaneously-can be designed with sufficiently fine segmentation to cope with high particle fluxes ~ (1MHz/mm2) at LHC

GEMs for CMS high eta upgrade(MPGD)

GEMs for CMS high eta upgrade(MPGD)

==>Possible participation

1.MPGD R&D and fabrication (GEM foils, mechanics, readout circuits etc)2.Module testing and characterization (using cosmic muons, X-ray test up)3.DAQ (Fast Electronics, Power supplies, Cables, Gas mixing unit etc)4.Beam test participation and online analysis at CERN5.Beam test Data Analysis 6.Detector Simulation7.Physics Potential (MC studies)

==> Possibility of putting PhD students.

Back UP

Software: Silvaco Tools

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• Device Simulation– ATLAS (2D Silicon Device Simulator)– S-PISCES (2D Silicon Device Simulator)– LUMINOUS (2D Optoelectronic Device

Simulator)– BLAZE (2D Device Simulator for

Advanced Materials)– Device 3D (3D Device Simulator)– TFT (Amorphous & Polycrystalline

Device Simulator)– QUANTUM (3D Simulation Models for

Quantum Mechanical Effects)– FERRO (Ferroelectric Field Dependent

Permittivity Model)

• Process Simulation– ATHENA Framework – S-SUPREM4 (Process Simulator)– MC Implant (Monte-Carlo

Implantation Simulator)– ELITE (Physical Etching and

Deposition Simulator)– OPTILITH (2D Optical Lithography

Simulator)– MC Deposit/ETCH (2D Monte Carlo

Deposition & Etch Simulator)