drift property in non-uniform b field
DESCRIPTION
Drift property in non-uniform B field. T.Sawada June 18, 2004. Electron drift in E and non-uniformed B field. Drift velocity of electron in E, B field (Langevin equation) First order Runge-Kutta integration was applied. Strategy of correction. Determine by the data of B=0 (vd=5cm/usec). - PowerPoint PPT PresentationTRANSCRIPT
Drift property in non-uniform B field.
T.Sawada
June 18, 2004
Electron drift in E and non-uniformed B field• Drift velocity of electron in E, B field (Langevin equation)
• First order Runge-Kutta integration was applied
collisionbetweentimemean
frequencycyclotron
mobility
BBEBEEE
vd
:
:
:
)ˆ)ˆˆ()(ˆˆ)(ˆ()(1
22
timeDriftT
positionfinalInitialrr
dtrvrr
steptrvr
fi
T
dif
d
:
)(:)(
)(
1:)(
0
0
0
Strategy of correction
1. Determine by the data of B=0 (vd=5cm/usec).
2. Execute Runge-Kutta intergration in non-uniform B
timedrift
dif dtrvrr
wirezofcoordinatez
planePadinyxyx
0
:0
:0,0
)(
,
)( mobility
Run # 28911 (CR) before correctionCut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
Layer-dependence of resZ
Layer
( at -1400 < z < -1300 )
resZ (m
m)
resZ (m
m)
Z-dependence of resZ
Z (mm)
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
( -1400 < z < -1300 )Run # 28911 (CR) before correction
resZ (mm) resZ (mm)
Layer = 0 Layer = 1
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
( -1400 < z < -1300 )Run # 28911 (CR) before correction
resZ (mm) resZ (mm)
Layer = 2 Layer = 3
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
( -1400 < z < -1300 )Run # 28911 (CR) before correction
resZ (mm) resZ (mm)
Layer = 4 Layer = 5
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
( -1400 < z < -1300 )Run # 28911 (CR) before correction
resZ (mm) resZ (mm)
Layer = 6 Layer = 7
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
( -1400 < z < -1300 )Run # 28911 (CR) before correction
resZ (mm) resZ (mm)
Layer = 8 Layer = 9
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
( -1400 < z < -1300 )Run # 28911 (CR) before correction
resZ (mm) resZ (mm)
Layer = 10 Layer = 11
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
( -1400 < z < -1300 )Run # 28911 (CR) before correction
resZ (mm) resZ (mm)
Layer = 12 Layer = 13
Run # 28911 (CR) after correction
Z (mm)
resZ (m
m)
resZ (m
m)
Layer
( at -1400 < z < -1300 )
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
Layer-dependence of resZ Z-dependence of resZ
resZ (mm) resZ (mm)
Layer = 0 Layer = 1
Run # 28911 (CR) after correction
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
( -1400 < z < -1300 )
resZ (mm) resZ (mm)
Layer = 2 Layer = 3
Run # 28911 (CR) after correction( -1400 < z < -1300 )
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
resZ (mm) resZ (mm)
Layer = 4 Layer = 5
Run # 28911 (CR) after correction( -1400 < z < -1300 )
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
resZ (mm) resZ (mm)
Layer = 6 Layer = 7
Run # 28911 (CR) after correction( -1400 < z < -1300 )
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
resZ (mm) resZ (mm)
Layer = 8 Layer = 9
Run # 28911 (CR) after correction( -1400 < z < -1300 )
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
resZ (mm) resZ (mm)
Layer = 10 Layer = 11
Run # 28911 (CR) after correction( -1400 < z < -1300 )
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
resZ (mm) resZ (mm)
Layer = 12 Layer = 13
Run # 28911 (CR) after correction( -1400 < z < -1300 )
Cut condition: chi2Pad > 0.02 , chi2Z > 0.02 , -0.4 < lambda (dip angle) <0.4
Summary• The Mean Value of the residual of Layer(5
~ 13) aprroached almost 0 !!
( Correction of Layer(0 ~ 1) is parhaps needed consideration of non-uniformity of the electronic field around Target-holder. )
• I intend to study the following in future :
> improvement of resZ of Layer(0 ~ 4)
> Z-dependance of resZ.