DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

2005 ITRS Public Conference

Emerging Research Materials

Seoul, KoreaDecember 13, 2005

Jim Hutchby – SRCMike Garner – Intel

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

ERM ParticipantsDimitri Antoniadis MITMarc Baldo                MITKarl Berggren           MITCharles Black IBMDawn Bonnell Penn. Univ.Alex Bratkovski HPGeorge Bourianoff IntelJohn Carruthers Port. St. Univ.Sang Wook Cheong Rutgers UnivSupriyo Datta Purdue Univ.Alex Demkov U. TexasSteve Erwin NRLM. Garner Intel, ChairBruno Ghyselen SOITECHDan Herr SRCSusan Holl Intel

Jim Hutchby SRC

Berry Jonker NRL

Gerhard Klemick Purdue Univ.

Ted Kamins HP

Richard KeihlU. Wisc.

Phil Kuekes HP

Louis Lome IDA Cons.

Mark Lundstrom Purdue

Kathryn Moler Stanford U.

David Muller Cornell U.

Ramamoorthy Ramesh UCB

Mark Reed Yale Univ.

Rafael Reif MIT

Dave Robert Air Products

Morley Stone DARPA

Sadasivan Shankar Intel

Shinichi Tagaki U of Tokyo

Tom Theis IBM

Jim Tour Rice Univ.

Ruud Tromp IBM

John Henry Scott NIST

Eric Vogel NISTVictor Zhirnov SRCIgor Zutic NRLKang Wang UCLARainer Waser Aacken U.Stan Williams HPIn Kyeong Yoo Samsung

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Devices & Material Interplay

DDS GateGate

Device ConceptDetermines Material Properties

Material properties optimized for device

Critical Properties = Properties for Device OperationExample: CNT DOS, Eg & meff f(chirality & diameter) Critical Properties Material Properties

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Strategic Thrust

• 1D charge state materials• Molecular state materials• Spin state materials• Strongly correlated electron state materials• Directed & self-assembly mechanisms• Interface & contact materials and processes• Nanomaterial Environmental, Safety, & Health Increased collaboration & coordination between

synthesis, metrology and modeling– University, Gov’t, National Labs & Industry

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

• 1D charge state materials– Control of properties, location & orientation

• Molecular state materials– Understand transport & switching mechanisms

• Spin state materials– Room temperature DMS materials, and spin gain

• Strongly correlated electron state materials– Determine potential for novel device applications

• Directed & self-assembly of nano-structured materials– Establish sub nm location and orientation control

• Interface & contact materials & processes• Improved metrology & modeling for nm scale structure and

material properties

Key Goals

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

1D Material Challenges

• Control diameter, nano-structure, bandgap & electronic properties

• Control location & orientation

DDS GateGate

DDS GateGate

0 Device State

0

1

Charge State

Charge State

1

+ + + +

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Carbon Nanotube Material Progress

E-Field Aligned Growth, H. Dai 2001

Patterned Growth on Silicon, H. Dai 1998

CNT’s Discovered,Iijima 1991 22nm Generation requires > 109 transistors/cm2

1991 Discovery Material Characterization & Improvement

Control location & orientation

Control of Properties

Doping of CNT Sidewalls N. Minami, 1999

Chemical Separation Of Metallic and semiconductor CNTs, N. Minami, 2005

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Molecular State Challenges

• Understand the transport & switching mechanism

O2N

NH2

S

Au

Au

Molecular State

0

CollectiveConformationalState

S S

Au

Au

Charge StorageState

Device State 1 1

Neutral State

O2N

NH2

S

Au

Au

-

S

Au

Au

S

0

Neutral State

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Molecular State Material Progress

Tools Emerging to Characterize Molecular State

Molecular “Gadget”, 1974

Inelastic Electron Tunneling Spectroscopy, M. Reed 2004

STM Molecular Switching, M. Reed 1996

Backside FTIRC. Richter, 2005

Siliconoxide

Metal

Siliconoxide

Siliconoxide

Metal

Understand Transport& Switching Mechanisms

Understand Contact Formation & Interactions

Complex contact & molecule interactions

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Spin State Challenges

• Room temperature ferromagnetic semiconductors (T curie)

• Efficient Spin Injection

• Materials Properties to Support Spin Gain

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Spin State Material Progress

Spin Injection Efficiency

0

0.2

0.4

0.6

0.8

1

1998 2000 2002 2004

Year

Spin

Inje

ctio

n Ef

ficie

ncy Low Temp FerroM Spin

Injection

RT Metallic Spin Injection

Need Room Temp FM Semiconductor & Spin Gain

Maximum Curie Temperature

0

100200

300

400

500600

700

1990 1995 2000 2005

Year

Cur

ie T

empe

ratu

re (T

c (K

)) Doped Oxides

(III.Mn)V

Carrier mediated exchange

Overlapping Bound Magnetic Polarons, Coey, Nature 2005

Room temperature

ferromagnetic

semiconductors

(T curie)

Efficient Spin Injection

Spin GAIN ?????

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

• Materials exhibit complex phase relationships•Spin, charge, orbital ordering

• Phase transitions can be induced by small perturbations•Magnetic field•Phonon•Charge

Strongly Correlated Electron State Materials

Can these materials enable new device functions?

TokuraTokura

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Directed Self Assembly Challenges

• Fabricate reproducible sublithographic features

• Structures aligned to lithographic features

• Features scale to sub 5nm resolution

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Sublithographic Directed Self Assembly Lithography

Isolated lines

Periodic lines with variable pitch and size at different locations

Lines (isolated & periodic) with right angles

Isolated lines with T intersections

Isolated openings (contacts or vias)

Periodic openings with variable pitch and size

Isolated rectangular contact openings

Registration between different layers is most critical!!!Goal: Determine whether fundamental mechanisms can support Directed Self Assembly of viable sublithographic structures

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Directed Self Assembly Progress

Di-block Copolymer self assembly on patternedMolecular monolayer: Goal reduce LERP. Nealey, U. Wisc.

Di-block Copolymer self assembly of magnetic materials in a confined space.C. Ross, MIT

Progress in aligning self assembled structures with lithographically defined structures

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Nanomaterial Environmental Safety & Health (ESH)

• Nanomaterial ESH research needs– Included in ESH Chapter– Understand unique properties– Detection metrology– Nanomaterial management best practices

DRAFT – Work In Progress - NOT FOR PUBLICATION 13 December 2005 – ITRS Public Conference

Summary

• Material improvement is progressing, but….• Significant challenges for each material will

require:– Improved synthesis capabilities– New metrology capabilities– Improved materials models– Improved interfaces– Directed assembly processes– Nanomaterial ESH research

Significant Collaboration is Required!!!