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Wideband CMOS PA Design at mm-Wave: Challenges and Case Studies
WW04
Matteo BassiUniversity of Pavia, Italy
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
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Outline
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• CMOS Power Amplifier Design Challenges• Coupled Resonators to Improve GBW• Case Studies
– [CS1] A 40-67 GHz PA with 13 dBm PSAT and 16% PAE in 28nm CMOS LP
– [CS2] A 15 GHz-Bandwidth 20 dBm PSAT Power Amplifier with 22% PAE in 65 nm CMOS
• Wrap up and conclusions
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Slide 3of 38
CMOS Power Amplifier Trends
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Generation of power at mm-wave in CMOS technology is challenging• If large bandwidth is required, output power further limited
[http://isscc.org/doc/2016/ISSCC2016_TechTrends.pdf*]
*CMOS only
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Power Amplifier Design Trade-Off
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Demand for broadband PAs:• Radar Imaging, Gb/s Wireless, Chip-to-Chip Links
• For a given power, bandwidth trades with gain and efficiency
Bandwidth
EfficiencyGain
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GBW-Efficiency Trade-Off
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• High efficiency requires high gain
• As a matter of fact, having both high gain/stage (hence good efficiency) and large BW is difficult
11Out In Out
DC DC
P P PPAEP P G− = = −
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Typical Power Amplifier
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Active Stages • High output power: large Ci2 and Co2
• Class AB biasing: high efficiency but low gm
• At the interstage GBW is limited to ≈ gm,MIn/Ci2
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GBW vs Efficiency at Interstage 1/2
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Assumptions:– Fixed output power Pout and gain G=Vout/Vin
– Fixed Vdd and size of MPA for desired Pout
– Inductor L1 resonates Ci,PA at center frequency– For every MDR size, RD selected to achieve desired gain G
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GBW vs Efficiency at Interstage 2/2
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• If 55% fractional BW is targeted, an interstage network with GBWEN=3 allows 5x smaller transistor, and PAE goes from 11% to 26%
• Interstage network with high GBW key in ehnancing efficiency at a fixed fractional BW
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Outline
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• CMOS Power Amplifier Design Challenges• Coupled Resonators to Improve GBW• Case Studies
– [CS1] A 40-67 GHz PA with 13 dBm PSAT and 16% PAE in 28nm CMOS LP
– [CS2] A 15 GHz-Bandwidth 20 dBm PSAT Power Amplifier with 22% PAE in 65 nm CMOS
• Wrap up and conclusions
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Slide 10of 38
Coupled Resonators (CR)
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Simple topology and low losses• Two peaking frequencies:
• L2 used to control the bandwidth• ZIn ≈ RL within band
1 3
21 1 3 3
1 1 , 1 L H LL L
LL C L Cω ω ω+
≈ = ≈ +
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GBW Improvement
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
2 , 2CR LC CR LCZt Zt BW BW≈ ≈
Coupled resonators allow x2 GBW enhancement (GBWEN)
20 40 60 80 10010
20
30
40
50
Frequency [GHz]|Z
t| [d
B]
CRLC
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In-Band Ripple Minimization
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Limited inductor Q leads to asymmetric response• Coupled resonator can be conveniently tuned to minimize in-band
ripple
30 40 50 60 70 8020
25
30
35
Frequency [GHz]
|Vou
t/Iin
| [dB
]
Q=100 Q=30 Q=1030 40 50 60 70 80
22
24
26
28
30
32
Frequency [GHz]|V
out/I
in| [
dB]
Q=10
1
3
( )( )
T H
T L
Z LZ L
ωω
≈
Decreasing Q Increasing L1/L3
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Outline
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• CMOS Power Amplifier Design Challenges• Coupled Resonators to Improve GBW• Case Studies
– [CS1] A 40-67 GHz PA with 13 dBm PSAT and 16% PAE in 28nm CMOS LP
– [CS2] A 15 GHz-Bandwidth 20 dBm PSAT Power Amplifier with 22% PAE in 65 nm CMOS
• Wrap up and conclusions
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PA Targets and Complete Schematic
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Design targets:• PSAT ≈ 13dBm, Fractional Bandwidth (f.c.) > 40% @60GHz• Gain > 10dB, PAE > 10%
• Careful design of interstage and output matching network are key in achieve desired targets
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Output Matching Network
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
Split L2
Norton transformation for impedance scaling
Transformer
Coupled Resonators for 2x GBWEN
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Output Matching Network
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Transformer for differential to single-ended conversion• L2s implemented by the parasitic inductor of the trace
connecting pads to the transformer• Efficiency greater than 70%
Lp=Ls=70pH, k=0.7 - L2s=40pH
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Traditional Interstage Matching Network
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• L resonates Ci and Co at center frequency• Given a target gain Gd and bandwidth BWd
• Explicit resistor Re increases bandwidth but decreases gain• Larger MIn required to restore gain level at the cost of
increased power consumption
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Interstage Matching Network
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Given Gd and BWd, GBW improvement of inductively coupled resonators exploited to scale down transistor size by n
• Norton transformations further reduce the size and power consumption by t
• nt close to 3 in this design
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Input Matching Network
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Neutralization increases stability but also QIN
• Inductive degeneration decreases QIN to achieve wideband input matching and enhances linearity
• Mutual coupling facilitates layout routing and reduces inductors length
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Chip Microphotograph
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
ST 28nm CMOS LP, chip area: 0.34 mm2
620 μm
540 μ
m
Interstage Matching
Output Matching
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Measured S-Parameters
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
30 35 40 45 50 55 60 65 70-60
-50
-40
-30
-20
-10
0
10
20
Frequency [GHz]
S-Pa
ram
eter
s [d
B]
S21S11S22S12
Gain ≈ 13 dB, BW ≈ 27 GHz, Frac. BW ≈ 51%
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Large Signal Performance at 50GHz
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
-10 -5 0 50
5
10
15
20
Input Power [dBm]
Pout
[dBm
] / G
ain
[dB]
/ PA
E [%
]
Pout Gain PAE
PSAT ≈ 13.3dBm, P1dB ≈ 12dBm, PAE = 16% @ 50GHz
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Large Signal Performance vs Frequency
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
Uniform PSAT and P1dB from 42-50GHz
40 42 44 46 48 500
5
10
15
20
Frequency [GHz]
P 1dB [d
Bm]/
P SAT [d
Bm]/
PAEp
eak
[%]
P1dB PSAT PAE
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Performance Summary and Comparison
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
Reference Tech.& Vdd
Gain [dB]
BW [GHz]
GBW[GHz]
PSAT[dBm]
P1dB[dBm]
PAE[%]
Frac. BW [%]
[W1] 65nm / 1.8V 16 21.0 133 13.0 8.0 8.0 35[W2] 65nm / 1V 16 9.0 57 11.5 n.d. 15.2 15[W3] 45nm / 2V 20 13.0 130 14.5 11.2 14.4 22[W4] 65nm / 1.2V 18 12.5 99 9.6 n.d. 13.6 21[CS1] 28nm / 1V 13 27.0 121 13.0 12.0 16.0 51
Largest bandwidth with state-of-the-art efficiency and output power
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Outline
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• CMOS Power Amplifier Design Challenges• Coupled Resonators to Improve GBW• Case Studies
– [CS1] A 40-67 GHz PA with 13 dBm PSAT and 16% PAE in 28nm CMOS LP
– [CS2] A 15 GHz-Bandwidth 20 dBm PSAT Power Amplifier with 22% PAE in 65 nm CMOS
• Wrap up and conclusions
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Power Combining
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Transformer-based combiner/splitter is popular– Compact size
– Low insertion loss
– Generally low bandwidth
• Wideband combining with coupled resonators
• Power combining mandatory for high POUT in CMOS PAs
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Wideband Combiner
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Easy to transform– Divide the left network into two same parts
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Wideband Splitter
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• Easy to transform– Divide the right network into two same parts
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Comparison with Transformer Splitter
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
20 40 60 80 10010
20
30
40
50
Frequency [GHz]
Tras
nim
peda
nce
Gai
n [d
BOhm
]
Designed Power SplitterSimple Tuned Transformer
More than two timesGBW improvement.
Practical impedance
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Complete Schematic
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• A prototype has been designed in ST 65nm CMOS:– Bandwidth > 13 GHz– Gain > 25dB– OP1dB > 15dBm– PAE > 20%
120u/60n 120u/60n 240u/60n
120u/60n 240u/60n
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Chip Microphotograph
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
ST 65nm CMOSChip area: 0.57 mm2
Core area: 0.11 mm2
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Measured S-Parameters
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
Gain≈30dB, BW3dB: 58.5-73.5GHz
40 50 60 70 80 90-60
-40
-20
0
20
40
Frequency [GHz]
S-Pa
ram
eter
s [d
B]
S21S12S11S22
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Large Signal Performance at 65GHz
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
PSAT≈20dBm, P1dB≈16dBm, PAE ≈ 22%, Pdc ≈ 470mW
-20 -15 -10 -5 0 50
5
10
15
20
25
30
35
Input Power [dBm]
Pout
[dBm
] / G
ain
[dB]
/ PA
E [%
]
Pout Gain PAE
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Large Signal Performance vs Frequency
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
P1dB>15dBm, PAE>15% over the bandwidth
60 65 70 7512
14
16
18
20
22
24
Frequency [GHz]
S-Pa
ram
eter
s [d
B]
Peak PAEPoutP1dB
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Performance Summary and Comparison
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
State-of-the-art PSAT and PAE with the largest GBW
Reference Tech.& Vdd
Gain (dB)
BW (GHz)
GBW(GHz)
PSAT(dBm)
P1dB(dBm)
PAE(%)
[W5] 28nm / 1V 24 11 174 16.5 11.7 13[W6] 40nm / 1V 17 6 42 17 13.8 30[W7] 65nm / 1.2V 17.7 12 92 16.8 15.5 15[W8] 28nm SOI/ 1V 35 8 450 18.9 15 18[CS2] 65nm / 1V 30 15 474 20 16 22
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Slide 36of 38
Outline
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• CMOS Power Amplifier Design Challenges• Coupled Resonators to Improve GBW• Case Studies
– [CS1] A 40-67 GHz PA with 13 dBm PSAT and 16% PAE in 28nm CMOS LP
– [CS2] A 15 GHz-Bandwidth 20 dBm PSAT Power Amplifier with 22% PAE in 65 nm CMOS
• Wrap up and conclusions
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Slide 37of 38
Conclusions
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
• High GBW is critical for PAs to achieve high efficiency over largebandwidth
• Coupled resonator can improve PA GBW while forming compactlayout
• A methodology was proposed to build wideband combiner/splitterusing coupled resonators
• A [CS1] two-stage one-path PA with 13dBm PSAT, 16% PAE, and 27GHz BW in 28nm CMOS and a [CS2] three-stage two-path PA with20dBm PSAT, 22% PAE, and 15GHz BW in 65nm CMOS demonstrate theeffectiveness of the proposed techniques
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Slide 38of 38
References
WW04 Power Amplifier Design Challenges and Solutions for mm-wave Radios
[CS1a] J. Zhao, M. Bassi, A. Bevilacqua, A. Ghilioni, A. Mazzanti and F. Svelto, "A 40–67GHz power amplifier with 13dBm PSAT and 16% PAE in 28nm CMOS LP," European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th, Venice Lido, 2014, pp. 179-182.[CS1b] M. Bassi, J. Zhao, A. Bevilacqua, A. Ghilioni, A. Mazzanti and F. Svelto, "A 40–67 GHz Power Amplifier With 13 dBm PSAT and 16% PAE in28 nm CMOS LP," in IEEE Journal of Solid-State Circuits, vol. 50, no. 7, pp. 1618-1628, July 2015.[CS2] J. Zhao, M. Bassi, A. Mazzanti and F. Svelto, "A 15 GHz-bandwidth 20dBm PSAT power amplifier with 22% PAE in 65nm CMOS," CustomIntegrated Circuits Conference (CICC), 2015 IEEE, San Jose, CA, 2015, pp. 1-4.
[W1] A. Siligaris et al., “A 65-nm CMOS fully integrated transceiver module for 60-GHz wireless HD applications,” IEEE J. Solid-State Circuits, vol.46, no. 12, pp. 3005–3017, Dec 2011.[W2] W. Chan and J. Long, “A 58–65GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply,” IEEE J. Solid-State Circuits, vol. 45,no. 3, pp. 554–564, March 2010.[W3] M. Abbasi et al., “A broadband differential cascode power amplifier in 45 nm CMOS for high-speed 60GHz system-on-chip,” in RadioFrequency Integrated Circuits Symposium (RFIC), 2010 IEEE, May 2010, pp. 533–536.[W4] T. Wang et al., “A 55–67GHz power amplifier with 13.6% PAE in 65 nm standard CMOS,” in Radio Frequency Integrated Circuits Symposium(RFIC), 2011 IEEE, June 2011, pp. 1–4.[W5] S. Thyagarajan, A. Niknejad, and C. Hull, “A 60 GHz linear wideband power amplifier using cascode neutralization in 28 nm CMOS,” inCustom Integrated Circuits Conference (CICC), 2013 IEEE, Sept 2013, pp. 1–4.[W6] D. Zhao and P. Reynaert, “A 60-GHz dual-mode class AB power amplifier in 40-nm CMOS,” Solid-State Circuits, IEEE Journal of, vol. 48, no.10, pp. 2323–2337, Oct 2013.[W7] P. Farahabadi and K. Moez, “A dual-mode highly efficient 60 GHz power amplifier in 65 nm CMOS,” in Radio Frequency Integrated CircuitsSymposium, 2014 IEEE, June 2014, pp. 155–158.[W8] A. Larie et al., “A 60 GHz 28 nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2 dBm P1dB and 74mW PDC,” inSolid-State Circuits Conference - (ISSCC), 2015 IEEE International, Feb 2015, pp. 1–3.