the Technology Driver of the Electronics Industry
International Symposium on
Venue : International Conference Center, Microelectronics and Information Systems Research Center, National Chiao Tung University ( Address : 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan, R.O.C. )Organizer : College of Electrical and Computer Engineering, National Chiao Tung UniversityContact persons : Prof. Horng-Chih Lin, Tel : +886-3-5712121ext.54193, e-mail : [email protected] Assistant Patty Chen, Tel : +886-3-5712121ext.54107, e-mail : [email protected]
Forty five years ago, the invention of the non-volatile semiconductor memory (NVSM) by Dr. Simon Sze and his colleague, the late Dr. Dawon Kahng, while working at Bell Laboratories, sparked a revolution in solid-state physics and microelectronics that continues to this day. From that first floating-gate memory device to the latest 512Gb NAND flash microchip, NVSM-inspired technology has ushered in the Digital Age and forever changed the world we live in.
To celebrate the 45th anniversary of the invention of NVSM and to pay tribute to hundreds of thousands of scientists and engineers, who have devoted their talents and energies to the research, development, and application of NVSM technology, we have organized this “International Symposium on Non-volatile Memory the Technology Driver of the Electronics Industry,’’ and invited 7 renowned experts to review the milestones of various NVSM technologies and share their expertise and perspective with the audience about the recent advances and future trends.
In Commemoration of the
45thAnniversary
of the Invention of the Nonvolatile Semiconductor Memory
March 26, 2012
It’s free to attend the Symposium, but the attendee must register on-line in advance (February 1 to March 23, 2012).
Registration website : http://www.nfc.nctu.edu.tw/NVM
Agenda Opening Address
Prof. Yan-Hwa Wu Lee / President, National Chiao Tung University
Deputy Minister, National Science Council
9:00 ~ 9:10
9:10 ~ 9:20
Session I : Floating-gate Memory Technology (A)
Chairman : Prof. Chung-Yu Wu / Chair Professor, National Chiao Tung University
Non-Volatile Semiconductor Memory in Retrospect and Prospect
Prof. Simon M. Sze / Chair Professor, National Chiao Tung University
9:20 ~ 10:05
Coffee Break 10:05 ~ 10:30
Session II : Floating-gate Memory Technology (B)
Chairman : Dr. Fu-Liang Yang / Director General, National Nano Device Laboratories
Brief History of ETOXTM
NOR Flash Memory
Dr. Stefan K. Lai / Technical Advisor, Xinnova Technology, Inc.
10:30 ~ 11:15
Future Prospects of NAND Flash Memory Technology – the
Evolution from Floating Gate to Charge Trapping to 3D Stacking
Dr. Chih-Yuan Lu / President, Macronix International Co., Ltd.
11:15 ~ 12:00
Lunch 12:00 ~ 13:00
Session III : FRAM & MRAM
Chairman : Prof. Ching-Te Chuang / Chair Professor, National Chiao Tung University
Ferroelectric Random Access Memories
Prof. Hiroshi Ishiwara / Konkuk University
13:00 ~ 13:45
Spintronics for Non-Volatile Magnetic Random Access Memory
Prof. Stuart A. Wolf / Director, University of Virginia
13:45 ~ 14:30
Coffee Break 14:30 ~ 14:50
Session IV : PCM & RRAM
Chairman : Dr. Kuang Yeu Hsieh / Director, Macronix International Co., Ltd.
Phase Change Memory
Prof. H.-S. Philip Wong / Stanford University
14:50 ~ 15:35
Redox-Based Resistive Switching Memories
Prof. Rainer Waser / RWTH Aachen University
15:35 ~ 16:20
Session V : Panel Discussion 16:20 ~ 17:00
Chairman : Prof. Tahui Wang / National Chiao Tung University
Sponsors : National Chiao Tung UniversityNational Program on Nano TechnologyAcademic-Industry Bridging Program for National Program for Intelligent Electronics
In Cooperation with :IEEE Taipei SectionIEEE EDS Taipei ChapterIEEE EDS Tainan ChapterTrans. Wireless Technology Foundation
National Nano Device LaboratoriesTaiwan Semiconductor Industry AssociationThe Electronics Devices and Materials Association
