All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC8406-H
MANUFACTURER: TOSHIBA
Body Diode (Special) / ESD Protection Diode
Remark: Silicon N&P Channel MOS Type
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
MOSFET MODEL
Pspice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
P-Channel Model
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A) gfs
Error(%) Measurement Simulation
-0.500 6.024 6.250 3.752
-1.000 7.692 7.813 1.563
-2.000 10.526 10.638 1.067
-5.000 15.625 15.773 0.947
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
V_V1
0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V
I(V3)
0A
-2.5A
-5.0A
-7.5A
-10.0A
-12.5A
-15.0A
-17.5A
-20.0A
-22.5A
-25.0A
open
V1-4.5Vdc
R1100MEG
open
open
TPC8406-H
0
0
V3
0Vdc
V2-10Vdc
open
open
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
-1.000 -2.050 -2.030 -0.985
-2.000 -2.150 -2.141 -0.428
-5.000 -2.400 -2.372 -1.183
-10.000 -2.650 -2.649 -0.053
-20.000 -3.050 -3.071 0.679
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
open
V1-4.5Vdc
R1100MEG
0
open
open
open
0
TPC8406-H
open
V210Vdc
V3
0Vdc
V_V2
0V -50mV -150mV -250mV -350mV -450mV
I(V3)
0A
-1.0A
-2.0A
-3.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-3.3A, VGS=-4.5V Measurement Simulation Error (%)
RDS (on) 29.000 m 29.000 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Time*1ms
0 5n 10n 15n 20n 25n 30n 35n 40n 45n 50n
V(W1:2)
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
-16V
-18V
-20V
I2
-6.5Adc
open
-
+
W1
ION = 0uAIOFF = 1mW
V2
0Vdc
0
0
TPC8406-HD1
Dbreak
open
I1
TD = 0
TF = 10nPW = 600uPER = 1000u
I1 = 0
I2 = 1m
TR = 10n
open
open
V1-32Vdc
open
R1100MEG
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=-32V,ID=-6.5A ,VGS=-10V
Measurement Simulation Error (%)
Qgs 3.200 nC 3.261 nC 1.903
Qgd 8.100 nC 7.935 nC -2.040
Qg 27.000 nC 27.065 nC 0.241
VDD=-32V
-16V
-8V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Capacitance Characteristic
Simulation Result
VSD(V) Cbd(pF)
Error(%) Measurement Simulation
0.100 132.620 132.900 0.211
0.200 128.800 127.500 -1.009
0.500 121.200 120.500 -0.578
1.000 112.750 113.500 0.665
2.000 105.950 106.300 0.330
5.000 97.450 96.000 -1.488
0.100 132.620 132.900 0.211
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Time
4.980us 5.000us 5.020us 5.040us 5.060us4.965us
V(2) V(3)/2
0V
-4V
-8V
-12V
V3
0Vdc
0
open
0
open
RL
6.1
L1
50nH
2
3
0
R1
4.7
Ropen100MEGR2
4.7
0
TPC8406-H
L2
30nH
open
0
VDD
-20.15
open
open
V1
TD = 5u
TF = 6nPW = 5uPER = 10u
V1 = 0
TR = 6n
V2 = -20
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-3.3 A, VDD=-20V VGS=0/-10V
Measurement Simulation Error(%)
ton 12.000 ns 11.985 ns -0.125
VGS
ID
Vg = 0/-10.0V
VDD = -20V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
V_V2
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V -1.6V -1.8V
I(V3)
0A
-2A
-4A
-6A
-8A
-10A
-12A
-14A
-16A
-18A
-20A
open
V1-4.5Vdc
R1100MEG
0
open
open
open
0
TPC8406-H
open
V210Vdc
V3
0Vdc
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=-2.4V
-2.8V
-3.0V
-4.0 V -3.4V
-3.2V
4.5V 10V
-2.6V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
R1 0.01m
U1
V10Vdc
0
V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
Drain-source voltage VSD (V)
Dra
in r
ev
ers
e c
urr
en
t ID
R (
A)
Measurement
Simulation
Comparison Graph Circuit Simulation Result
Simulation Result
IDR(A) VSD(V)
%Error Measurement Simulation
0.1 0.6200 0.6199 -0.0161
0.2 0.6450 0.6449 -0.0155
0.5 0.6800 0.6801 0.0147
1 0.7100 0.7092 -0.1127
2 0.7450 0.7430 -0.2685
5 0.8000 0.8034 0.4250
10 0.8700 0.8716 0.1839
20 0.9800 0.9743 -0.5816
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Time
2.12us 2.14us 2.16us 2.18us 2.20us 2.22us 2.24us 2.26us 2.28us 2.30us
I(R1)
-2.0A
-1.5A
-1.0A
-0.5A
0A
0.5A
1.0A
1.5A
2.0A
Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr 36.8 ns 36.782 ns -0.05
Vsense
U1
PARAMETERS:TF = 1.6u
0
R1 2
V1TF = {TF}VPULSE
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Recovery Characteristic (Body Diode) Reference
Trr=36.8ns Conditions:Ifwd=di/dt=30A/us
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
R2
1MEG
U30
TPC8406-H
OPENV1
0Vdc
0
OPEN
R1
0.01m
0
OPEN
OPEN
OPEN
OPEN
OPEN
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
N-Channel Model
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A) gfs
Error(%) Measurement Simulation
0.500 5.556 5.814 4.643
1.000 8.333 8.000 -3.996
2.000 10.530 10.929 3.788
5.000 16.129 16.234 0.649
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V 5.5V
I(V3)
0A
2.5A
5.0A
7.5A
10.0A
12.5A
15.0A
17.5A
20.0A
22.5A
25.0A
27.5A
30.0A
open
open
open
open
R1100MEG
V110Vdc
open
V210Vdc
0
0
U39
TPC8406-H
V3
0Vdc
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Comparison Graph Circuit Simulation Result
Simulation Result
ID(A) VGS(V)
Error (%) Measurement Simulation
1.000 2.420 2.455 1.426
2.000 2.580 2.562 -0.694
5.000 2.770 2.786 0.585
10.000 3.020 3.055 1.169
20.000 3.470 3.469 -0.032
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
V3
0Vdc
R1100MEG
0
V14.5Vdc
V210Vdc
open
open
open
open
open
U39
TPC8406-H
0
V_V2
0V 50mV 100mV 150mV 200mV 250mV 300mV 350mV 400mV 450mV
I(V3)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=3.3A, VGS=4.5V Measurement Simulation Error (%)
RDS (on) 27.000 m 27.000 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Time*1ms
0 2n 4n 6n 8n 10n 12n 14n 16n 18n 20n
V(W1:2)
0V
2V
4V
6V
8V
10V
12V
14V
16V
18V
20V
open
D1
Dbreakopen
TPC8406-H
open
0
open
I1
TD = 0
TF = 10nPW = 600uPER = 1000u
I1 = 0
I2 = 1m
TR = 10n-
+W1
ION = 0uAIOFF = 1mW
I2
6.5Adc
V132Vdc
V2
0Vdc
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=32V,ID=6.5A ,VGS=10V
Measurement Simulation Error (%)
Qgs 2.100 nC 2.117 nC 0.810
Qgd 2.700 nC 2.703 nC 0.111
Qg 11.000 nC 11.036 nC 0.327
VDD=32V
16V
8V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Capacitance Characteristic
Simulation Result
VDS(V) Cbd(pF)
Error(%) Measurement Simulation
0.100 288.8 290.000 0.416
0.300 267.75 268.000 0.093
0.600 217.5 220.000 1.149
1.000 172.5 172.000 -0.290
3.000 122.3 121.200 -0.899
6.000 69.48 68.000 -2.130
10.000 40.59 41.490 2.217
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Time
4.980us 5.000us 5.020us 5.040us 5.060us4.965us
V(2) V(3)/2
0V
4V
8V
12V
R2
4.7
L1
50nHopen
VDD
20.15
TPC8406-H
open
V3
0Vdc
0
L2
30nH
2
3
RL
6.1
V1
TD = 5u
TF = 6nPW = 5uPER = 10u
V1 = 0
TR = 6n
V2 = 20
R1
4.7
open
open
0
0
0
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=3.3 A, VDD=20V VGS=0/10V
Measurement Simulation Error(%)
ton 9.000 ns 9.039 ns 0.433
VGS
ID
Vg = 0/10.0V
VDD = 20V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
V_V2
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(V3)
0A
2A
4A
6A
8A
10A
12A
14A
16A
18A
20A
V210Vdc
0
TPC8406-H
V3
0Vdc
V14.5Vdc
open
open
open
open
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=2.6V
2.8V
3.0V
3.2V
4.0 V
3.6V
3.4V
3.8V
4.5V 10V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
V10Vdc
0
U1
R1 0.01m
V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
Drain-source voltage VSD (V)
Dra
in r
ev
ers
e c
urr
en
t ID
R (
A)
Measurement
Simulation
Comparison Graph Circuit Simulation Result
Simulation Result
IDR(A) VSD(V)
%Error Measurement Simulation
0.1 0.6000 0.5995 -0.08
0.2 0.6200 0.6206 0.10
0.5 0.6550 0.6548 -0.03
1 0.6900 0.6874 -0.38
2 0.7200 0.7257 0.79
5 0.7950 0.7890 -0.75
10 0.8550 0.8554 0.05
20 0.9500 0.9556 0.59
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Time
2.12us 2.14us 2.16us 2.18us 2.20us 2.22us 2.24us 2.26us 2.28us 2.30us
I(R1)
-2.0A
-1.5A
-1.0A
-0.5A
0A
0.5A
1.0A
1.5A
2.0A
Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr 32.8 ns 31.954 ns -2.58
Vsense
0
V1TF = {TF}VPULSE
R1
PARAMETERS:TF = 1.6u
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Reverse Recovery Characteristic (Body Diode) Reference
Trr=32.8ns Conditions:Ifwd=di/dt=30A/us
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
U30
TPC8406-H
OPEN OPEN
OPEN OPEN
0
OPEN
V1
0Vdc
R1
0.01m
OPEN
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Zener Voltage Characteristic Reference