SMD Type
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Diodes
■ Features ● For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
● Integrated diffused guard ring
● Low forward voltage
0.4 +0.1-0.1
2.9 +0.1-0.1
0.95 +0.1-0.1
1.9 +0.1-0.1
2.4
+0.1
-0.1
1.3
+0.1
-0.1
0-0.1
0.38
+0.1
-0.1
0.97
+0.1
-0.1
0.55
0.4
1 2
3
Unit: mmSOT-23
0.1 +0.05-0.01
■ Absolute Maximum Ratings Ta = 25℃
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Reverse breakdown voltage VR IR= 100 uA 40 V
IF= 1 mA 350
IF= 10 mA 430
IF= 30 mA 520
IF= 100 mA 750
Reverse voltage leakage current IR VR=25 V 2 uA
Capacitance between terminals CT VR= 1 V, f= 1 MHz 6 pF
Forward voltage VF mV
■ Marking
Parameter Symbol Rating Unit
Peak Reverse Voltage VRM 40
DC Reverse Voltage VR 40
Forward Current IF 250
Non-repetitive Peak forward surge current @t=8.3ms IFSM 800
Power Dissipation PD 250 mW
Thermal Resistance Junction to Ambient RθJA 400 ℃/W
Junction Temperature TJ 125
Storage Temperature range Tstg -55 to 150
V
℃
mA
Schottky DiodesBAT64-04/05/06-HF (KAT64-04/05/06-HF)
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
BAT64-04-HFBAT64-HF BAT64-05-HF BAT64-06-HF
Type BAT64-HF BAT64-04-HF BAT64-05-HF BAT64-06-HF
Marking 63S F 64S F 65S F 66S F
SMD Type
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Diodes
■ Typical Characterisitics
0 8 16 24 32 400
5
10
15
20
0 25 50 75 100 1250
50
100
150
200
250
300
0.0 0.2 0.4 0.6 0.8 1.0 1.21
10
100
0 10 20 30 400.1
1
10
100
1000
Capacitance Characteristics
CA
PAC
ITA
NC
E B
ETW
EEN
TER
MIN
ALS
CT
(pF)
REVERSE VOLTAGE VR (V)
Ta=25℃
f=1MHz
Reverse CharacteristicsForward Characteristics
Power Derating Curve
POW
ER D
ISS
IPAT
ION
P
D
(mW
)
AMBIENT TEMPERATURE Ta ( )℃
Ta=25℃
Ta=100 ℃
FORWARD VOLTAGE VF (V)
FOR
WA
RD
CU
RR
EN
T
I F (m
A)
800
Ta=25℃
Ta=100 ℃
REVERSE VOLTAGE VR (V)
RE
VER
SE
CU
RR
EN
T I
R
(uA)
Schottky DiodesBAT64-04/05/06-HF (KAT64-04/05/06-HF)
