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Section I: Motivation and introduction
The technological foundations of most high-tech industries are based primarily on the development/creation and utilization of different kinds of thin films: deposition and patterning.
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Outline of the course
Basic thermostatand vacuum tech
sources deposition morphology
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Example:Cross section of a computer chip
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ILDILD
C o p p e r
C o p p e rSe e d
5 nm
~ 2 m ~ 3 nm
~ 2 nm
0.2 mSchematic representing a cross-sectional view of the topography that is encountered in the processing of integrated circuits.
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Magnetic storage---towards terabits/in2
C. Ross, Annu. Rev. Mater. Res. 2001. 31:203-235.
Three strategies:
• exchange-decoupled grains (conventional)•In-plane patterned media•Perpendicular patterned media
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Ha rd d rive sub stra te
Re sista nc e
-+
Fe rro m a g ne t
Pinne d m a g ne t
Fre e m a g ne tUnd e rla ye r(s)
M a g ne tic Film
Sp a c e r la ye r
G M RHe a d
O ve rc o a t la ye r(s)
Illustration of hard disk structure and giant magneto-resistive sensing heads usedfor high density data storage devices.
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1
“Photonic bandgap: woodpile structure”(Professor S. Lin, RPI)
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MRS: Colvin, MRS Bulletin August, 2001, page 637
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Optical switches: •MEMS---mirror switches: D. Bishop et al, Physics Today Oct 2001 (Lucent)
MEMS
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Solid state laser: http://www.rpi.edu/futurechips/
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Cleland (2003)Industrial Physics (2002)
Mini-machnines (Micromechanical systems): actuator, resonator, valve, damper, motor…. Wu (2002)
Micro-mirror arrays--Lucent (2001)
microns
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Physical vapor deposition: thermal evaporation, e-beamevaporation, sputter deposition, laser ablation, ion beam deposition
thicknessmonitor
pump
substrate
source
vapor
Base pressure --vacuum seal, outgasing, contamination, pumpsDeposition rate (nm/s) --source T, vapor pressure, impinging rate Film structure --morphology, crystal orientation, substrate T, uniformity
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Chemical vapor deposition: thermal CVD, atomic layer deposition
Ar
H2
Pump
Ar
precursor
Substrate Heater
Pressure, T (source and substrate),flow rate, deposition rate, pulseduration, film properties
NSi(CH3)3
CuCu
N(H3C)3Si
(H3C)3Si
Si(CH3)3
Pd2+
O
OC
CHC
CF3
CF3
-OO
O C
C
CH
CF3
CF3
O-
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Solution based deposition: electrochemical deposition (ECD), Electroless deposition (ELD)
Cu2+(EDTA)
SO42-
OH-wafer
glyoxylic acid
- +
Cu2+
e-
SO42-
H+
Cl-wafer anode
electrochemical deposition Electroless deposition(HO2CCH2)2NCH2CH2N(CH2CO2H)2
Room T T~70o
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Home work. 1. (Deadline: Sept 7, 8am) Describe briefly five different devices or structures (with figures or drawing) that require extensive thin film coating work. (One page per device.)