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Power Surfing
MasterGaN rides the new wave of GaN Power
Jodie Wang
Technical marketing manager
Power Discrete & Sub-Analog, STMicroelectronics
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Agenda
1 Energy management trends -> GaN vs. Silicon based transistors
2 Smart GaN: integrating GaN with driver
3
The MasterGaN Ecosystems 4
2
The MasterGaN* platform
5 Takeaways
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Energy management trendsGaN vs. Silicon based transistors
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AC-DC adapters, USB-PD
Telecom / Server power
Energy storage systems (UPS)
Fast and wireless charging
Power supply for 5G
Solar DC-AC converters
Power for PC, OLED TV
Communication Infrastructure
HV / HEV charging stations
The future of energy Efficiency & power density
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High power – Mini size
Server power supplyAC-DC adapter
& Smartphone fast charger
4x smaller
3x lighter
Solar ESS (Energy Storage System)
50% higher power density
20% lower PLOSS
2x smaller
3x lighter
Fan-less
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Travel adapter development
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Power Level Increasing 5W 65W 120W
Power Density Increasing 5W/in3 20W/in3 30W/in3
Switching frequency Increasing 60kHz 150kHz 350kHz
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GaN vs. Silicon based transistors
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Parameter GaN Silicon Comments
Qg-Gate charge Lower HigherGaN has lower driver loss for higher
frequency & efficiency
Coss-Output
capacitanceLower Higher
GaN has lower switching loss for
higher frequency & efficiency
Qrr-Reverse
recovery chargeLower Higher
GaN suitable for higher frequency
& efficiency
Vgs- gate voltage Difficult EasyGaN needs better gate drive circuit
and PCB layout
Vsd-body diode
conductionHigher Lower
GaN needs better control of
deadtime
GaN transistors allow higher frequencies, better efficiency and higher
power density than silicon-based transistors
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Smart GaN: integrating GaN with driverThe MasterGaN* platform
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Higher
power densityHigher switching speed to reduce
systems size and cost
Faster
go-to-market
Packaged solution simplifies the
design, with a higher level of
performance
Higher efficiencyReduced power losses, reduced
power consumption, exceeding the
most stringent energy requirements
Smart GaN: Integrating GaN with driver
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Key benefits
• Compact system solution and
simplified layout
• BOM reduction:SiP with offline driver
optimized for GaN
• Robust solution: driver and GaN
power transistors integration
• Package GQFN 9x9
• Flexible, easy and fast design
• Scalable p2p solution for power
range 30-400 W
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Applications
Telecom/Server Power
Power Supply for 5G
Communication
Infrastructure
HV/HEV Charging Stations
Energy Storage Systems
(UPS)
Solar DC-AC Converters
PC Power, OLED TV
High-Density AC-DC
Adapters, Fast Charging,
USB-PD
MasterGaN applications and benefits
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MasterGaNFirst in the market
• Integrated power GaN
• Embedded gate driver easily supplied by the integrated bootstrap diode
• UVLO protection on both the lower and upper driving sections, preventing the
power switches from operating in low efficiency or dangerous conditions, and
the interlocking function avoids cross-conduction conditions
• Over temperature protection
• Smart solution in GQFN 9x9 mm2 package
• Input pins extended range -3.3 to 15 V with hysteresis and pull-down- allows
easy interfacing with microcontrollers, DSP units or Hall effect sensors
• Dedicated pin for shutdown functionality
• Accurate internal timing match
Compact
Robust
Easy
Design
VDS 600 V
RDSON 150 mΩ
IDSMAX 10 A
MASTERGAN1
VDS 600 V
RDSON 150 mΩ (LS)
+ 225 mΩ (HS)
IDSMAX 10 A (LS) + 6.5 A (HS)
MASTERGAN2
Mass productionAdvanced power solution integrating a gate driver and two
enhancement mode GaN transistors in half-bridge configuration
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MasterGaN block diagram & Key features
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Features
• Power system-in-package integrating half-bridge gate driver and high-
voltage GaN transistors:
– BVDSS = 650 V
– RDS(ON) = 150 mΩ
– IDS(MAX) = 10 A
• Reverse current capability
• Zero reverse recovery loss
• UVLO protection on low-side and high-side
• Internal bootstrap diode
• Interlocking function
• Dedicated pin for shutdown functionality
• Accurate internal timing match
• 3.3 V to 15 V compatible inputs with hysteresis and pull-down
• Overtemperature protection
• Bill of material reduction
• Very compact and simplified layout
• Flexible, easy and fast design
High power density half-bridge 650V GaN with embedded driver
Driver
High-Side
GAN
transistor
Low-Side
GAN
transistor
GQFN 9x9
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MasterGaN Gate drive logic inputs
Disabled input port
Normal Operation
Configurations
Gate drive logic inputs truth table
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MasterGaN pinout
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MasterGaN pinout
GQFN 9x9
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MasterGaN Footprint
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GQFN 9x9
Key features• Creepage distance >2 mm between HV and
LV pads
• 3 exposed pads for thermal dissipation
Footprint with >2 mm creepage between HV and LV pads
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Typical application diagram
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ACF Controller
Active clamp flyback Topology
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HB Controller
Typical application diagram
LLC Resonant Topology
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The MasterGaN Ecosystems
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MasterGaN1 - Ecosystem
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Key applications
• Switch-mode power supplies
• Chargers and adapters
• High-voltage PFC
• DC-DC and DC-AC converters
• UPS systems
• Solar power
Evaluation board & ecosystem available at www.st.com/mastergan
EVALMASTERGAN1
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MasterGaN2 - Ecosystem
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Key applications
• Switch-mode power supplies
• Chargers and adapters
• High-voltage PFC
• DC-DC converters
Evaluation board & ecosystem available at www.st.com/mastergan
EVALMASTERGAN2
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MasterGaN4 - Ecosystem
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Key applications
• Switch-mode power supplies
• Chargers and adapters
• High-voltage PFC
• DC-DC converters
• DC-AC converters
Evaluation board & ecosystem available at www.st.com/mastergan
EVALMASTERGAN4
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MasterGaN1 – 250W Resonant Ecosystem
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Evaluation board & ecosystem available at www.st.com/mastergan
EVLMG1-250WLLC
Key applications
• Switch-mode power supplies
• Chargers and adapters
• Industrial DC-DC applications
• Consumer SMPS Nominal Input voltage: 400 V +/- 10%
L6x99 + MasterGaN1
Vout=24V
100 x 60 x 35 (W x H) mm.
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1
MasterGaN solutions under development
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65W STOne Compact BoardSTOne + MasterGaN1 USB-PD
RM8 Transformer
Power density: 30W/in3 (uncased)
65W STOne Evaluation BoardSTOne + MasterGaN1 USB-PD
RM8 Transformer
Customizable board to specific customer
requirements
65W STOne Planar Compact Board
for TA chargerSTOne + MasterGaN2 USB-PD
Planar Transformer
200W TM PFC+LLC Board
Gaming NoteBookSTCMB1 + MasterGaN1
MasterGaN solutions to address a variety of application
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Takeaways
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MasterGaN family roadmapQFN 9x9 mm2 pin-to-pin scalable
MasterGaN1
Symmetrical
150 + 150 mΩ
From 45 up to 400 W
MasterGaN4
Symmetrical
225 + 225 mΩ
MasterGaN5
Symmetrical
450 + 450 mΩ
MasterGaN3
Asymmetrical
225 + 450 mΩ
MasterGaN2
Asymmetrical
150 + 225 mΩ
Development Development
Whole product family to be released by H1 2021
Mass production
One driver, many standard transistors for HB configuration
Mass production Mass production
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1
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MasterGaNEnd applications
In Mass Production
65 W
100 W
400 W
Active Clamp
Flyback/ Forward
Totem-pole PFC,
Resonant
Totem-pole PFC,
Resonant
Smartphone ultra-fast and wireless
chargers, USB-PD compact
adapters for pc and gaming
Industrial power supplies like
solar-energy storage systems,
uninterruptible power supplies
(UPS)
High-end OLED TVs,
server cloud
MasterGaN solutions to address a variety of application Switch-mode power
supplies from 65 to 400 W in high-end, high-efficiency topologies
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MasterGaN rides the new wave of GaN Power
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Increasing efficiency & power density is a clear trend
GaN HEMT make a quantum leap
in power conversion
Smart GaN ICs maximize the benefits
of the new technology
MasterGaN® takes the challenge first
Smart GaN innovation leverages
ST leadership in power conversion
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