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Potential Applications for Graphene Devices in Nanoelectronics Max Lemme KTH Royal Institute of Technology School of Information and Communication Technology [email protected]
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Acknowledgement KTH Ana Rusu Anderson Smith Christopher Borsa Jiantong Li Mikael Östling Sam Vaziri Saul Rodriguez Harvard David Bell Frank Koppens (ICFO, Spain) Charles Marcus (Niels Bohr Institute, Denmark) James Williams (Stanford)
AMO Tim Echtermeyer (UCAM) MIT Leonid Levitov Mark Rudner UPC Barcelona Eduard Alarcon IHP Jarek Dabrowski Gunther Lippert Grzegorz Lupina Wolfgang Mehr ERC Funding (OSIRIS, No. 228229)
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Graphene – Devices and Technology
Outline
• Introduction
• Graphene Fabrication
• Graphene-based Electronic Devices
• Applications beyond ”Moore’s Law”
• Summary
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Graphene
sp² bonded carbon atoms (~4,3eV)
Graphene: Crystal Properties
Sublattice constant: a = 0.246 nm “Thickness”: d = 0.34 nm
Orbitals
2D-crystal lattice
Orbitals
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Lemme, Sol. St. Phenom., 2010
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“The mother of all graphitic forms”
Nature Mater. 6., 183, 2007 0D: Buckyballs 1D: Nanotubes 3D: Graphite
Only one atom thick!
2D: Graphene
Graphite: In plane: sp² bonded carbon atoms (~4,3eV) Inter plane: weak v.d. Waals bonds (~0,07eV)
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Electronic properties • Semi-metal or zero-gap semiconductor
• Linear dispersion relation Optoelectronics
• Massless dirac fermions, v ~ c/300 • Intrinsic carrier mobility (suspended graphene in vacuum)
200.000 cm2 V-1s-1
• Carrier mobility of graphene on SiO2 at room-temperature 10.000-20.000 cm2 V-1s-1
• Maximum current density J > 108 A/cm2
• Velocity saturation vsat = 5 x 107 cm/s (10 x Si, 2 x GaAs)
Exceptional Properties (1/2)
After: Wallace, Phys. Rev. 71, 622 (1947).
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Mechanical properties • Young’s modulus: ~1.10 TPa (Si ~ 130 GPa) • Elastically stretchable by 20% • ”strongest material known” • Flexible Thermal conductivity • ∼5.000 W/m•K at room temperature
Diamond: ∼2000 W/m•K, 10 x higher than Cu, Al Thinnest material possible Transparent (only 1 atom thin)
Transparent flexible conductive electrodes
High surface to volume ratio Sensors
Exceptional Properties (2/2)
Lee et al., Science, 385-388, 18 July 2008
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Graphene by HRTEM… and by STM
Chem. Commun., 2009, 6095 - 6097
Aberration-corrected transmission electron microscope (TEAM 0.5)
Mashoff et al, Nanoletters 2010
Scanning tunneling microscope image of graphene on SiO2
Graphene: Nanolandscapes
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Outline
Graphene – Devices and Technology
• Introduction
• Graphene Fabrication
• Graphene-based Electronic Devices
• Applications beyond ”Moore’s Law”
• Summary
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80 μm 20 μm
• Novoselov et al., Science 306, 666 (2004) • flake size: 5 – 100 µm • random location • simple process for proof-of-concept • no industrial relevance
Exfoliation with adhesive tape
Graphene Fabrication Methods: Exfoliation
Silicon Wafer
Graphite
Tape
Chips
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• Berger et al., J. Phys. Chem. B 108, 2004 • limited scalability • high temperatures (~1500°C) • high cost of material • monolithic integration
Kedzierski et al., IEEE TED, 2008
Thermal decomposition of SiC (epitaxial graphene)
Optical image
Alternative approach: SiC growth on Silicon OSIRIS Project - M. Östling, M. Lemme, H. Radamson
Source: Infineon
• scalable • modest temperatures (<1000°C) • Silicon Technology compatible
Graphene Fabrication Methods: Epitaxy
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• CVD on Nickel, Copper, etc. • High potential for large areas • Graphene transfer to random substrates • Monolayers vs. Multilayers?
Cao et al, Applied Physics Letters 96, 122106 (2010)
Graphene on Copper -> PMMA -> Silicon
Chemical Vapor Deposition (CVD) Graphene Fabrication Methods: CVD
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Roll-to-Roll Production Bae et al. Nature Nanotech (2010)
Graphene Fabrication Methods: CVD
In Europe: GRAFOL - Graphene Chemical Vapour Deposition: Roll to Roll Technology
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Outline
Graphene – Devices and Technology
• Introduction
• Graphene Fabrication
• Graphene-based Electronic Devices
• Applications beyond ”Moore’s Law”
• Summary
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Graphene Transistors: Technology
Source: TU Delft
Silicon MOSFET Graphene MOSFET
Graphene Transistors: § Silicon process technology can be applied („Top-Down“) § Graphene is compatible with (most) standard processes § …Graphene MOSFET!?
Lemme et al. ”A Graphene Field Effect Device”, IEEE Electr. Dev. Lett. 28(4), 2007.
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Schmidt et al., Sol. St. Electr., 2009
“On”-current
“Off”-current
• Highly mature technology • Billions of devices in parallel • Near ideal switch • Ion/Ioff ratio: several decades • Speed ~ Ion ~ µeff (carrier mobility)
µ - Silicon: 100-450 cm2/Vs µ - Graphene: 1.0000 – 200.000 cm2/Vs
Graphene MOSFET!?
Graphene Transistors (GFETs)
Silicon MOSFET
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p-type n-type
Graphene Transistors: Transfer Characteristics
~2 x (compare Silicon: > 1.000.000 x)
Potential Applications of Graphene NanoSpain Max Lemme
Silicon
SiO2
graphene Vs = 0 V Vd
Vbg
“On”-current
“Off”-current
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Graphene Transistors: § Ambipolar behaviour (n- und p-type conduction) § Ion/Ioff ratio inherently limited by band structure (semimetall) § NOT a direct replacement for Silicon logic, BUT... § ... Higher functionality devices (e.g. frequency multipliers – Palacios Group) § ... High speed analog transistors
Silicon MOSFET Graphene MOSFET
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RF Graphene Transistors • Exploiting high carrier mobility / velocity
• High on/off ratio not required
Graphene: RF Transistors
Today: 300 GHz!!!
Improvement due to interface engineering
Lemme, Sol. St. Phenom., 2010
Potential Applications of Graphene NanoSpain Max Lemme
Development of cut-off frequency fT (12/2008-09/2010)
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G
mT C
gFπ21
= (CG includes Ct-ox and Cq)
• FT,MAX of GFET almost as high as Si-CMOS at IDS = 1µA
• Si-CMOS FT,MAX at higher current consumption than GFET FT,MAX
• GFETs achieve best performance in rather narrow IDS range
• “Dead zone” for GFET amplifiers • Bilayer GFETs?
65nm GFET vs. Si-MOSFET
Rodriguez et al., arxiv 2011
Graphene: RF Transistors
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Performance Projections
Potential Applications of Graphene NanoSpain Max Lemme
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Performance Projections
GFETFT,MAX vs. Mobility for L = 65 nm, TOX = 2.6 nm, and εr = 3.9
• THz operation seems feasible for high mobility graphene à Graphene/insulator interface engineering à High quality CVD (or other) growth technique
Graphene: RF Transistors
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Rodriguez et al., arxiv 2011
Potential Applications of Graphene NanoSpain Max Lemme
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Chen 2008:
Bolotin 2008:
RT
Corrugations Longitudinal Acoustic Phonons (µRT,max ~ 200.000 cm2/Vs) SiO2 Surface Phonons (µRT,max ~ 40.000 cm2/Vs) Charged impurities (µRT,max ~ 10.000 cm2/Vs) (Oxide, interface, molecules?) Crystal defects CVD Graphene!
Mobility limited by scattering by:
After: Chen et al. Solid State Comm., 2009
Graphene Transistors: Fundamental Limits
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Silicon Potential Applications of Graphene NanoSpain Max Lemme
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Unconventional use of unconventional characteristics!?
• 1 Transistor Rectifier • 1 Transistor Frequency Doubler
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Graphene: RF Transistors
Wang et al., “Graphene Frequency Multipliers”, IEEE EDL 5, 2009
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Graphene Transistors: GBT A new proposal: Graphene Base Transistor - GBT
GFET GBT • “Hot Electron” transistor • Charge carriers are transported perpendicular to the graphene sheet • Operation depends on quantum mechanical tunnelling
Potential Applications of Graphene NanoSpain Max Lemme
W. Mehr et al., IEEE EDL, 2012
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Graphene Transistors: GBT A new proposal: Graphene Base Transistor - GBT
GBT 90°
Unbiased Biased
W. Mehr et al., IEEE EDL, 2012
Potential Applications of Graphene NanoSpain Max Lemme
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!
!
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Graphene Transistors: GBT A new proposal: Graphene Base Transistor - GBT
• Estimated transfer (b) and output (c) behavior • Off-state expected to be well below on-state • Current saturation • Band structure needs careful engineering
W. Mehr et al., IEEE EDL, 2012
Potential Applications of Graphene NanoSpain Max Lemme
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Graphene Transistors: GBT
THz Operation seems feasible !
Potential Applications of Graphene NanoSpain Max Lemme
W. Mehr et al., IEEE EDL, 2012
Performance Projections
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Outline
Graphene – Devices and Technology
• Introduction
• Graphene Fabrication
• Graphene-based Electronic Devices
• Applications beyond ”Moore’s Law”
• Photodetection
• Summary
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• E-k linear up to +- 1eV • Potential from visible spectrum to THz • High data rates
Graphene Optoelectronics
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Graphene Optoelectronics
Mueller et al., Nat. Photonics 2010
• Metal – graphene interface induces pn-junction • Control through back gate (substrate)
Graphene photodetectors for high-speed optical communications
• Graphene ”Eye Diagram” • Error free optical data transmission at 10 Gbit/s
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Graphene: Photodetection
Lemme, Koppens, et al. “Gate Controlled Photocurrent in a Graphene p-n Junction”, Nano Letters, 11, 2011.
Potential Applications of Graphene NanoSpain Max Lemme
Graphene Photodetectors: Local Tunability
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Graphene: Photodetection
• Strong photoresponse in pn junction
• Weak photoresponse in similar carrier gradient (nn’ or pp’)
• Thermoelectric effect dominates over photovoltaic effect
Lemme, Koppens, et al. “Gate Controlled Photocurrent in a Graphene p-n Junction”, Nano Letters, 11, 2011.
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Lemme et al., Nano Letters 2011
Graphene Photodetection • Strong contribution from Seebeck
effect (pn-junction required) • Local contol of p-n junction allows on-
off control of photodetection. • No biasing required (no dark current) • Scalability to submicron gates • Potential to integrate graphene
optoelectronics into existing platforms • Potential for UV to THz applications • Enhanced quantum efficiency through
carrier multiplication*
Potential Applications of Graphene NanoSpain Max Lemme
Graphene: Photodetection
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* Prediction: Song et al., Nano Letters 2011
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Outline
Graphene – Devices and Technology
• Introduction
• Graphene Fabrication
• Graphene-based Electronic Devices
• Applications beyond ”Moore’s Law”
• Supercapacitors
• Summary
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Graphene Supercapacitors for Energy Storage
Ragone Plot
Bombardier “Wireless” Train
Source: Wikipedia
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Capacitor Direct Energy Storage Non-Faradaic Process
dAC r 0εε=
Supercapacitor, Ultracapacitor Electrochemical Double Layer Capacitor
High surface area (!)
Current Collector Electrode (Porous)
Electrolyte Separator
Graphene Supercapacitors for Energy Storage
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Source: Wikipedia
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Chmiola et al., “Monolithic Carbide-Derived Carbon Films for Micro-Supercapacitors”, Science 328, 480 (2010)
Microelectronic Integration of Supercapacitors
Graphene Supercapacitors for Energy Storage
Graphene-based Supercapacitor, Science 329, 1637 (2010)
Graphene: • comparable surface to volume ratio with porous carbon • 104-105 higher conductivity
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• Graphene thin films from solution • Transparent & conductive • Inkjet-printable
Li, Lemme, Ostling, “A Simple Route towards High Concentration Surfactant-Free Graphene
Dispersions“, Carbon, 2012
Graphene Supercapacitors for Energy Storage
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Outline
Graphene – Devices and Technology
• Introduction
• Graphene Fabrication
• Graphene-based Electronic Devices
• Applications beyond ”Moore’s Law”
• NEMS / Sensors
• Summary
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Graphene
”S#ffness” of a material
Steel
Bamboo
Silicone elastomere
Polymere foam
Boron Carbide
Graphene Mechanics
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Lee et al., Science, 385-388, 18 July 2008
Graphene Nanomechanics
Graphene based mass, force, pressure sensors
NEMS • Young’s modulus: ~1.10 TPa (Si ~ 130 GPa) • Elastically stretchable by 20% • High mechanical stability • ”strongest material known” • Flexible • Low mass
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Source: A. Bachtold A. Smith et. al., ULIS 2012
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Lu et al., Appl. Phys. Lett. 97, 083107 (2010)
DNA decorated graphene chemical sensors
• Clean graphene devices show very weak vapor response
• Devices functionalized (red & blue data) show significant sequence‐dependent responses
Introduction of analyte at progressively larger concentrations
Graphene Sensors
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Source: Robert Johnson, Temple University
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Jene Golovchenko, Harvard University.
Graphene Sensors
DNA sequencing using nanopores in graphene
Why graphene?
• High mechanical strength
• High electric conductivity
• Ultimately thin
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Outline
Graphene – Devices and Technology
• Introduction
• Graphene Fabrication
• Graphene-based Electronic Devices
• Applications beyond ”Moore’s Law”
• Summary
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• Graphene is a “Serious” Electronic Material • Large Area Manufacturing Available
• Electronic Applications
• Analog Transistors
• Optoelectronics
• Printable Electronics
• Supercapacitors
• Transparent Electrodes
• Interconnects
• Passives, Antennas
Summary
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• NEMS • Mechanical Applications (Space Elevator) • Sensors (Functionalized Surfaces, Biocompatibility) • Resistive Switching (Memory Applications) • Ballistic Devices • Spintronics (Spin-Valves, SpinMOSFET, SpinFET) • …other 2D Materials (h-BN, MoS2…)
Graphene: Research Topics
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Graphene – Enabling New Gadgets?
Body Sensors
Smart Monitoring Wearable Electronics
> 24 Universities, research institutions & industry • Energy Harvesting • Wireless Sensor Networks • Health, Safety and Environmental monitoring • Bid for 10 year, 1 billion EUR flagship project • http://www.ga-project.eu
29 February 2012 Potential Applications of Graphene NanoSpain Max Lemme