Electronic Components and Technology Conference
Packaging Challenges and Solutions for Silicon Carbide Power Electronics
Ljubisa Stevanovic, Ph.D. Chief Engineer and Advanced Technology Leader, GE Global Research, Niskayuna, NY [email protected] Presented at: ECTC Panel Session: Power Electronics – A Booming Market, San Diego, 29 May, 2012
L. Stevanovic, Power Electronics – A Booming Market, 2
Semiconductor Materials for Power Electronic Devices
L. Stevanovic, Power Electronics – A Booming Market, 3
SiC Enables New Product Capabilities
GE SiC MOSFET
1/2 Space & weight, or
2x
50oC
Reliability
Higher temperature capability
Generation
Conversion
Distribution
Power Density 2x Air
Land Marine
L. Stevanovic, Power Electronics – A Booming Market, 4
Limitations of Standard Power Module
• Electrical limitations • Current sharing • Package inductance too high • Wirebond current handling
• Thermal limitations • Baseplate-to-heatsink thermal
resistance • Low power density (including
heatsink)
• SiC module power limitations • Yield and cost challenges
associated with wirebonding many small SiC devices
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• Minimize voltage overshoot / derating
• Reduce switching losses, or increase frequency
• Minimize snubber requirements
OFF
loopst
ILV
Importance of Low Inductance
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Adhesive
Die Die
Polyimide Copper
Die Metallization
<200 µm GE POL Structure
Die Die Die Metallization
Aluminum wirebond
>2000 µm
Wirebond Structure
Low & matched parasitics - Low Inductance, Low Resistance; High current capability : Power Efficiency
Reducing size and weight while maintaining performance: System Cost
Eliminate wire-bonds and solder-bumps: Power Efficiency & Performance
Ability to array multiple die: System Cost
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3
4
1
1
2
3
4
Power OverLay (POL) Interconnect PWB-like planar interconnect for power packaging
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• Thick copper connections • Litho defined layout • Laser drilled vias • Frame based • Flexible film
~200 µm
Top-side view Underside
Copper
Die
Solder
Polyimide
Adhesive
Via
POL via cross-section
PWB-like Manufacturing Processes
POL vias
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Performance Differentiation
Wirebond POL Flip-Chip
Resistance
Inductance
Manuf Costs
HF characteristics
System Cost
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SiC Power Module –Switching Test 11ns inductive switching at: VDS = 540V, ID = 300A
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VIN = +/-270VDC, VOUT = 220VLN, POUT = 75kW, FFUND_MAX =1.8kHz
Motor
Comp-ressor +/- 270VDC
+
-
3
Liquid Cooling
Aircraft Cabin
Environmental Control System (ECS)
3
3
Starter
GE SiC MOSFET Modules
75kW SiC Inverter Dual function: engine starter + ECS compressor drive
Air Land
Marine
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SiC MEA Inverter - Efficiency Results
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Summary: GE SiC Development Realizing the full benefit of SiC power electronics
